TW200633211A - Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer - Google Patents
Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same waferInfo
- Publication number
- TW200633211A TW200633211A TW094106558A TW94106558A TW200633211A TW 200633211 A TW200633211 A TW 200633211A TW 094106558 A TW094106558 A TW 094106558A TW 94106558 A TW94106558 A TW 94106558A TW 200633211 A TW200633211 A TW 200633211A
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- field effect
- same wafer
- low
- semiconductor devices
- Prior art date
Links
Abstract
A field effect transistor(FET) with novel field-plate structure relates to a Schottky gate FET structure with field plate thereon for high voltage operations. The structure and fabrication processes thereof not only provide a reliable way to produce high-voltage FETs, but also allow the integration of conventional low voltage FETs on the same wafer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094106558A TW200633211A (en) | 2005-03-04 | 2005-03-04 | Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094106558A TW200633211A (en) | 2005-03-04 | 2005-03-04 | Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200633211A true TW200633211A (en) | 2006-09-16 |
Family
ID=57809259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094106558A TW200633211A (en) | 2005-03-04 | 2005-03-04 | Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW200633211A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102254943A (en) * | 2011-08-06 | 2011-11-23 | 深圳市稳先微电子有限公司 | Transistor power device with gate source side table protection and manufacturing method thereof |
CN102280483A (en) * | 2011-08-06 | 2011-12-14 | 深圳市稳先微电子有限公司 | Power device with side stage protecting source and gate and manufacture method thereof |
US9508843B2 (en) | 2013-09-10 | 2016-11-29 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US10236236B2 (en) | 2013-09-10 | 2019-03-19 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US10665709B2 (en) | 2013-09-10 | 2020-05-26 | Delta Electronics, Inc. | Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad |
US10833185B2 (en) | 2013-09-10 | 2020-11-10 | Delta Electronics, Inc. | Heterojunction semiconductor device having source and drain pads with improved current crowding |
US10910491B2 (en) | 2013-09-10 | 2021-02-02 | Delta Electronics, Inc. | Semiconductor device having reduced capacitance between source and drain pads |
-
2005
- 2005-03-04 TW TW094106558A patent/TW200633211A/en unknown
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102254943A (en) * | 2011-08-06 | 2011-11-23 | 深圳市稳先微电子有限公司 | Transistor power device with gate source side table protection and manufacturing method thereof |
CN102280483A (en) * | 2011-08-06 | 2011-12-14 | 深圳市稳先微电子有限公司 | Power device with side stage protecting source and gate and manufacture method thereof |
CN102254943B (en) * | 2011-08-06 | 2013-06-19 | 深圳市稳先微电子有限公司 | Transistor power device with gate source side table protection and manufacturing method thereof |
US9508843B2 (en) | 2013-09-10 | 2016-11-29 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US10084076B2 (en) | 2013-09-10 | 2018-09-25 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US10236236B2 (en) | 2013-09-10 | 2019-03-19 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US10468516B2 (en) | 2013-09-10 | 2019-11-05 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US10573736B2 (en) | 2013-09-10 | 2020-02-25 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US10665709B2 (en) | 2013-09-10 | 2020-05-26 | Delta Electronics, Inc. | Power semiconductor device integrated with ESD protection circuit under source pad, drain pad, and/or gate pad |
US10833185B2 (en) | 2013-09-10 | 2020-11-10 | Delta Electronics, Inc. | Heterojunction semiconductor device having source and drain pads with improved current crowding |
US10910491B2 (en) | 2013-09-10 | 2021-02-02 | Delta Electronics, Inc. | Semiconductor device having reduced capacitance between source and drain pads |
US10950524B2 (en) | 2013-09-10 | 2021-03-16 | Delta Electronics, Inc. | Heterojunction semiconductor device for reducing parasitic capacitance |
US11817494B2 (en) | 2013-09-10 | 2023-11-14 | Ancora Semiconductors Inc. | Semiconductor device having reduced capacitance between source and drain pads |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009036266A3 (en) | Iii-nitride bidirectional switches | |
EP3675158A3 (en) | Three dimensional integrated circuits with stacked transistors | |
WO2007136401A3 (en) | N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor | |
TW200633211A (en) | Semiconductor devices integrating high-voltage and low-voltage field effect transistors on the same wafer | |
WO2006066265A3 (en) | Drain extended pmos transistors and methods for making the same | |
US20150035586A1 (en) | Solid-state switching device having a high-voltage switching transistor and a low-voltage driver transistor | |
TW200625630A (en) | Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETs | |
TW200721507A (en) | Improved thin film transistors | |
TW200715562A (en) | Thin film transistor substrate and fabrication thereof | |
TW200618286A (en) | Semiconductor device | |
TW200711001A (en) | Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same | |
WO2012119125A3 (en) | High performance graphene transistors and fabrication processes thereof | |
TW200625640A (en) | Field effect transistor | |
TW200605322A (en) | Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility | |
TW200721320A (en) | Methods of forming NMOS/PMOS transistors with source/drains including strained materials and devices so formed | |
EP2363885A3 (en) | Efficient high voltage switching circuits and monolithic integration of same | |
ATE434267T1 (en) | INTEGRATED CIRCUIT WITH CLOSE COUPLED HIGH VOLTAGE OUTPUT AND OFFLINE TRANSISTOR PAIR | |
TW200707736A (en) | Field effect transistor with mixed-crystal-orientation channel and source/drain regions | |
TW200511580A (en) | A semiconductor device and a method of manufacturing the same | |
WO2010036673A3 (en) | Bipolar/dual fet structure including enhancement and depletion mode fets with isolated channels | |
TW200627627A (en) | Enhancement-depletion field effect transistor structure and method of manufacture | |
WO2005098959A3 (en) | Dual-gate transistors | |
TW200727451A (en) | Cascode circuit | |
TW200518323A (en) | FinFET SRAM cell using inverted FinFET thin film transistors | |
GB2434033A (en) | Organic transistor |