TW200723280A - Resistive memory devices including selected reference memory cells and methods of operating the same - Google Patents

Resistive memory devices including selected reference memory cells and methods of operating the same

Info

Publication number
TW200723280A
TW200723280A TW095141271A TW95141271A TW200723280A TW 200723280 A TW200723280 A TW 200723280A TW 095141271 A TW095141271 A TW 095141271A TW 95141271 A TW95141271 A TW 95141271A TW 200723280 A TW200723280 A TW 200723280A
Authority
TW
Taiwan
Prior art keywords
resistive memory
block
operating
methods
same
Prior art date
Application number
TW095141271A
Other languages
English (en)
Other versions
TWI322429B (en
Inventor
Hyun-Jo Kim
Jang-Eun Lee
Se-Chung Oh
Kyung-Tae Nam
In-Gyu Baek
Jun-Ho Jeong
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200723280A publication Critical patent/TW200723280A/zh
Application granted granted Critical
Publication of TWI322429B publication Critical patent/TWI322429B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Read Only Memory (AREA)
TW095141271A 2005-11-09 2006-11-08 Resistive memory devices including selected reference memory cells and methods of operating the same TWI322429B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050107178A KR100735748B1 (ko) 2005-11-09 2005-11-09 가변성 저항체들을 데이터 저장요소들로 채택하는 메모리셀들을 갖는 반도체 소자들, 이를 채택하는 시스템들 및 그구동방법들
US11/580,766 US20070103964A1 (en) 2005-11-09 2006-10-13 Resistive memory devices including selected reference memory cells and methods of operating the same

Publications (2)

Publication Number Publication Date
TW200723280A true TW200723280A (en) 2007-06-16
TWI322429B TWI322429B (en) 2010-03-21

Family

ID=38003573

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095141271A TWI322429B (en) 2005-11-09 2006-11-08 Resistive memory devices including selected reference memory cells and methods of operating the same

Country Status (4)

Country Link
US (2) US20070103964A1 (zh)
KR (1) KR100735748B1 (zh)
DE (1) DE102006062969B3 (zh)
TW (1) TWI322429B (zh)

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KR20130021739A (ko) * 2011-08-23 2013-03-06 삼성전자주식회사 저항성 메모리 장치, 이의 테스트 시스템 및 저항성 메모리 장치의 테스트 방법
JP2013114731A (ja) * 2011-11-30 2013-06-10 Toshiba Corp 半導体記憶装置
KR102023626B1 (ko) 2013-01-25 2019-09-20 삼성전자 주식회사 스핀 홀 효과를 이용한 메모리 소자와 그 제조 및 동작방법
US8953387B2 (en) 2013-06-10 2015-02-10 Micron Technology, Inc. Apparatuses and methods for efficient write in a cross-point array
US9312005B2 (en) 2013-09-10 2016-04-12 Micron Technology, Inc. Accessing memory cells in parallel in a cross-point array
KR102098244B1 (ko) 2014-02-04 2020-04-07 삼성전자 주식회사 자기 메모리 소자
US9312002B2 (en) 2014-04-04 2016-04-12 Sandisk Technologies Inc. Methods for programming ReRAM devices
US9324423B2 (en) 2014-05-07 2016-04-26 Micron Technology, Inc. Apparatuses and methods for bi-directional access of cross-point arrays
FR3027450B1 (fr) 2014-10-20 2016-11-04 Commissariat Energie Atomique Dispositif memoire non volatile hybride et procede de fabrication d'un tel dispositif
US10157671B1 (en) 2017-09-12 2018-12-18 Macronix International Co., Ltd. Fast switching 3D cross-point array
US20230317162A1 (en) * 2022-03-31 2023-10-05 Crossbar, Inc. Differential programming of two-terminal memory with program detection and multi-path disablement

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Also Published As

Publication number Publication date
TWI322429B (en) 2010-03-21
KR20070049897A (ko) 2007-05-14
KR100735748B1 (ko) 2007-07-06
US7672155B2 (en) 2010-03-02
DE102006062969B3 (de) 2016-07-14
US20070103964A1 (en) 2007-05-10
US20090067216A1 (en) 2009-03-12

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MM4A Annulment or lapse of patent due to non-payment of fees