TW200717748A - Heated substrate support and method of fabricating same - Google Patents

Heated substrate support and method of fabricating same

Info

Publication number
TW200717748A
TW200717748A TW095135021A TW95135021A TW200717748A TW 200717748 A TW200717748 A TW 200717748A TW 095135021 A TW095135021 A TW 095135021A TW 95135021 A TW95135021 A TW 95135021A TW 200717748 A TW200717748 A TW 200717748A
Authority
TW
Taiwan
Prior art keywords
substrate support
groove
heater element
heated substrate
fabricating same
Prior art date
Application number
TW095135021A
Other languages
English (en)
Chinese (zh)
Inventor
John M White
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200717748A publication Critical patent/TW200717748A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW095135021A 2005-10-18 2006-09-21 Heated substrate support and method of fabricating same TW200717748A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US72793005P 2005-10-18 2005-10-18
US11/341,297 US20070090516A1 (en) 2005-10-18 2006-01-27 Heated substrate support and method of fabricating same

Publications (1)

Publication Number Publication Date
TW200717748A true TW200717748A (en) 2007-05-01

Family

ID=38058764

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135021A TW200717748A (en) 2005-10-18 2006-09-21 Heated substrate support and method of fabricating same

Country Status (5)

Country Link
US (1) US20070090516A1 (enExample)
JP (1) JP2007169777A (enExample)
KR (1) KR20070042469A (enExample)
CN (1) CN1952211A (enExample)
TW (1) TW200717748A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417500B (zh) * 2008-05-20 2013-12-01 Nippon Light Metal Co A method of manufacturing a heat transfer plate and a heat transfer plate

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090001091A (ko) * 2007-06-29 2009-01-08 (주)티티에스 외부발열부재가 구성된 반도체 제조장치
KR100934403B1 (ko) * 2007-11-30 2009-12-29 (주)위지트 냉각 수단을 구비한 서셉터
US9917001B2 (en) * 2008-01-21 2018-03-13 Applied Materials, Inc. High temperature fine grain aluminum heater
KR101010646B1 (ko) * 2008-11-17 2011-01-24 주식회사 메카로닉스 히터블록
JP5331582B2 (ja) * 2009-06-05 2013-10-30 シャープ株式会社 冷却機能を有する加熱装置
KR101220306B1 (ko) * 2010-01-06 2013-01-22 (주)티티에스 서셉터 및 이의 제조 방법
US20120285383A1 (en) * 2010-01-14 2012-11-15 Oerlikon Solar Ag, Trubbach Mounting for fixing a reactor in a vacuum chamber
CN102922124A (zh) * 2011-08-10 2013-02-13 富泰华工业（深圳）有限公司 金属壳体的制造方法
US8941969B2 (en) * 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
JP2015088643A (ja) 2013-10-31 2015-05-07 セイコーエプソン株式会社 電子デバイスの製造方法、電子デバイス、電子機器、移動体、および蓋体
JP2015088644A (ja) * 2013-10-31 2015-05-07 セイコーエプソン株式会社 電子デバイスの製造方法、電子デバイス、電子機器、移動体、および蓋体
JP5857081B2 (ja) * 2014-02-17 2016-02-10 助川電気工業株式会社 基板加熱プレートヒータの製造方法
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US10369748B2 (en) * 2017-10-26 2019-08-06 Battelle Memorial Institute Friction stirring interlocking of dissimilar materials
US11330673B2 (en) * 2017-11-20 2022-05-10 Applied Materials, Inc. Heated substrate support
KR20200040398A (ko) * 2018-10-10 2020-04-20 안범모 디스플레이 제조 공정용 접합부품 및 디스플레이 제조 공정 장비
CN111266724A (zh) * 2018-12-05 2020-06-12 杭州三花研究院有限公司 电加热器的制造方法
TWI841699B (zh) * 2019-03-15 2024-05-11 美商蘭姆研究公司 半導體製造應用中的摩擦攪拌銲接
JP7401279B2 (ja) * 2019-12-06 2023-12-19 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
JP7458337B2 (ja) * 2021-02-09 2024-03-29 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
CN221202786U (zh) * 2021-05-04 2024-06-21 沃特洛电气制造公司 带有嵌入式电阻加热器的金属加热器组件
US12074010B2 (en) * 2021-09-09 2024-08-27 Applied Materials, Inc. Atomic layer deposition part coating chamber
US12546003B2 (en) * 2022-09-16 2026-02-10 Applied Materials Inc. Atomic layer deposition part coating chamber
CN115635262A (zh) * 2022-11-29 2023-01-24 合肥升滕半导体技术有限公司 一种光伏加热板及其加工方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
JP3897391B2 (ja) * 1997-03-25 2007-03-22 昭和電工株式会社 金属製接合部材の摩擦撹拌接合法
JP3070735B2 (ja) * 1997-07-23 2000-07-31 株式会社日立製作所 摩擦攪拌接合方法
JPH11204239A (ja) * 1998-01-12 1999-07-30 Fuji Electric Corp Res & Dev Ltd プレート型ヒータおよびその製造方法および薄膜製造装置
US6290117B1 (en) * 1998-02-17 2001-09-18 Hitachi, Ltd. Friction stir welding method and friction stir welding apparatus
US5971247A (en) * 1998-03-09 1999-10-26 Lockheed Martin Corporation Friction stir welding with roller stops for controlling weld depth
JP2000073164A (ja) * 1998-08-28 2000-03-07 Showa Alum Corp スパッタリング用バッキングプレート
US6247633B1 (en) * 1999-03-02 2001-06-19 Ford Global Technologies, Inc. Fabricating low distortion lap weld construction
US6227433B1 (en) * 2000-04-04 2001-05-08 The Boeing Company Friction welded fastener process
JP3553012B2 (ja) * 2000-11-17 2004-08-11 株式会社日立製作所 摩擦攪拌接合方法
JP4385533B2 (ja) * 2001-03-02 2009-12-16 日本軽金属株式会社 ヒートプレートの製造方法
JP2002270346A (ja) * 2001-03-09 2002-09-20 Mitsubishi Heavy Ind Ltd 加熱装置及びその製造方法並びに被膜形成装置
JP2004071172A (ja) * 2002-08-01 2004-03-04 Mitsubishi Heavy Ind Ltd 加熱装置およびその製造方法並びに被膜形成装置
JP2004106037A (ja) * 2002-09-20 2004-04-08 Hitachi Ltd 金属材料の結合方法
JP4325260B2 (ja) * 2003-04-15 2009-09-02 日本軽金属株式会社 伝熱素子の製造方法
JP4806179B2 (ja) * 2004-10-08 2011-11-02 古河スカイ株式会社 ヒータプレートの製造方法
JP4808949B2 (ja) * 2004-10-12 2011-11-02 助川電気工業株式会社 埋込ヒータを有する発熱体の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417500B (zh) * 2008-05-20 2013-12-01 Nippon Light Metal Co A method of manufacturing a heat transfer plate and a heat transfer plate
TWI558970B (zh) * 2008-05-20 2016-11-21 Nippon Light Metal Co A method of manufacturing a heat transfer plate and a heat transfer plate

Also Published As

Publication number Publication date
CN1952211A (zh) 2007-04-25
JP2007169777A (ja) 2007-07-05
US20070090516A1 (en) 2007-04-26
KR20070042469A (ko) 2007-04-23

Similar Documents

Publication Publication Date Title
TW200717748A (en) Heated substrate support and method of fabricating same
EP1840486A4 (en) SORPTION HEAT EXCHANGE MODULE AND METHOD FOR THE PRODUCTION THEREOF
IL208425A (en) A process for assembling at least one region on a first surface with at least one region of a second surface or with a molecule of interest, a solid support and a process for adjusting surface energy of at least one solid surface
ZA200805026B (en) Method for perforating heat meltable material
EP1808087A4 (en) HEAT SOURCE ROD PRODUCTION MACHINE AND METHOD OF MANUFACTURING THE SAME
PL1896564T3 (pl) Sposób i urządzenie do hodowania komórek z wykorzystaniem ruchu falowego
GB2431326B (en) Ceramic heater,method for manufacturing the same,heating apparatus and hair iron
IL188076A0 (en) Electrode for an electrical component, component with the electrode, and manufacturing method for the component
EP1770212A4 (en) SHEET-FORMED ARTICLE, METHOD FOR MANUFACTURING THE SAME, AND EXOTHERMIC FORM ARTICLE
EP1939960A4 (en) GAS DIFFUSION ELECTRODE MATERIAL AND METHOD FOR PRODUCING THE SAME
ZA200706448B (en) Process for production of energy and apparatus for carrying out the same
EP1795047A4 (en) METHOD AND APPARATUS FOR FORMING METAL BY RESISTANCE HEATING
EG25306A (en) Method and apparatus for the heat treatment of welds.
EP1731903A4 (en) POROUS ELECTRODE AND METHOD FOR THE PRODUCTION THEREOF
EP2042287A4 (en) CUSHIONING MATERIAL FOR HOT PRESSING AND MANUFACTURING METHOD THEREFOR
EP1949978A4 (en) METHOD FOR PRODUCING BASE MATERIAL FOR FORMING A THERMAL PROTECTION FILM
EP1889270A4 (en) METHODS FOR PRODUCING ELECTRODE FOR ELECTROCHEMICAL CELL AND THEREOF WITH ELECTRODE
EP1947527A4 (en) INTERMEDIATE TRANSFER MEDIUM, METHOD FOR PRODUCING INTERMEDIATE TRANSFER MEDIUM, AND IMAGE FORMING APPARATUS COMPRISING THE INTERMEDIATE TRANSFER MEDIUM
AU2003233755A8 (en) Heating device and method for the production thereof and heatable object and method for producing the same
FR2866036B1 (fr) Elements de securite de format relativement petit et leur procede de fabrication, feuille et document de securite les comportant
EP1852719A4 (en) METHOD FOR THE DESIGN OF A DIFFUSION FILM, PROCESS FOR THE PRODUCTION THEREOF, AND DIFFUSION FILM OBTAINED THEREFOR
PL1927275T3 (pl) Szablon drukarski stosowany w procesie SMT i sposób jego powlekania
EP1731150A4 (en) NIOSOM WITH A METAL-PORPHYRINE COMPLEX EMBEDDED THEREIN; PROCESS FOR ITS PREPARATION AND MEDICAMENT TO BE USED THEREFOR
WO2009147056A3 (de) Verfahren zur verbindung zweier komponenten
GB2410023B (en) Carbon material and process for producing the same