TW200717238A - Methods, circuits and computer program products for updating data in non-volatile memories - Google Patents

Methods, circuits and computer program products for updating data in non-volatile memories

Info

Publication number
TW200717238A
TW200717238A TW095132832A TW95132832A TW200717238A TW 200717238 A TW200717238 A TW 200717238A TW 095132832 A TW095132832 A TW 095132832A TW 95132832 A TW95132832 A TW 95132832A TW 200717238 A TW200717238 A TW 200717238A
Authority
TW
Taiwan
Prior art keywords
circuits
methods
computer program
program products
updating data
Prior art date
Application number
TW095132832A
Other languages
English (en)
Inventor
Jeong-Hyon Yoon
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200717238A publication Critical patent/TW200717238A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
TW095132832A 2005-09-06 2006-09-06 Methods, circuits and computer program products for updating data in non-volatile memories TW200717238A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050082496A KR100714873B1 (ko) 2005-09-06 2005-09-06 비휘발성 메모리에서 데이터 갱신 방법 및 이를 위한 장치

Publications (1)

Publication Number Publication Date
TW200717238A true TW200717238A (en) 2007-05-01

Family

ID=37910955

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132832A TW200717238A (en) 2005-09-06 2006-09-06 Methods, circuits and computer program products for updating data in non-volatile memories

Country Status (3)

Country Link
US (1) US20070081386A1 (zh)
KR (1) KR100714873B1 (zh)
TW (1) TW200717238A (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9348730B2 (en) * 2007-01-31 2016-05-24 Standard Microsystems Corporation Firmware ROM patch method
US8566504B2 (en) * 2007-09-28 2013-10-22 Sandisk Technologies Inc. Dynamic metablocks
KR100953062B1 (ko) 2008-05-20 2010-04-13 주식회사 하이닉스반도체 불휘발성 메모리 소자의 어드레스 입력 방법 및 동작 방법
KR102102224B1 (ko) * 2013-10-01 2020-04-20 삼성전자주식회사 저장 장치 및 그것의 프로그램 방법
KR102195298B1 (ko) 2014-02-13 2020-12-24 삼성전자주식회사 비휘발성 메모리 장치의 부분 페이지 프로그램 방법
KR102211868B1 (ko) 2014-12-15 2021-02-04 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0562485A (ja) * 1991-09-05 1993-03-12 Hitachi Building Syst Eng & Service Co Ltd 制御装置の消去可能な読出し専用メモリの書換装置
US5890192A (en) * 1996-11-05 1999-03-30 Sandisk Corporation Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
JP3895816B2 (ja) 1996-12-25 2007-03-22 株式会社東芝 不揮発性半導体記憶装置とその制御方法、メモリカード、及び記憶システム
JP3916862B2 (ja) * 2000-10-03 2007-05-23 株式会社東芝 不揮発性半導体メモリ装置
US6763424B2 (en) * 2001-01-19 2004-07-13 Sandisk Corporation Partial block data programming and reading operations in a non-volatile memory
US6871257B2 (en) * 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
JP2004030784A (ja) * 2002-06-26 2004-01-29 Fujitsu Ltd 半導体記憶装置
KR100914646B1 (ko) * 2002-08-31 2009-08-28 지인정보기술 주식회사 멀티-플레인 구조의 플래시 메모리 관리 방법
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
KR100654343B1 (ko) * 2003-07-15 2006-12-05 주식회사 레인콤 플래시 메모리를 이용한 기억장치 및 그 에러 복구 방법
US7173863B2 (en) * 2004-03-08 2007-02-06 Sandisk Corporation Flash controller cache architecture
JP4237648B2 (ja) * 2004-01-30 2009-03-11 株式会社東芝 不揮発性半導体記憶装置
US7409473B2 (en) * 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
US7212440B2 (en) * 2004-12-30 2007-05-01 Sandisk Corporation On-chip data grouping and alignment
US7752382B2 (en) * 2005-09-09 2010-07-06 Sandisk Il Ltd Flash memory storage system and method
KR100685638B1 (ko) * 2006-03-31 2007-02-22 주식회사 하이닉스반도체 랜덤 프로그램 기능을 가지는 듀얼 플레인 타입 플래시메모리 장치 및 그 프로그램 동작 방법

Also Published As

Publication number Publication date
KR100714873B1 (ko) 2007-05-07
KR20070027161A (ko) 2007-03-09
US20070081386A1 (en) 2007-04-12

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