TW200717052A - Ridge technique for fabricating an optical detector and an optical waveguide - Google Patents
Ridge technique for fabricating an optical detector and an optical waveguideInfo
- Publication number
- TW200717052A TW200717052A TW095132492A TW95132492A TW200717052A TW 200717052 A TW200717052 A TW 200717052A TW 095132492 A TW095132492 A TW 095132492A TW 95132492 A TW95132492 A TW 95132492A TW 200717052 A TW200717052 A TW 200717052A
- Authority
- TW
- Taiwan
- Prior art keywords
- optical
- fabricating
- detector
- optical waveguide
- optical detector
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System including only AIVBIV alloys, e.g. SiGe
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/121—Channel; buried or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12123—Diode
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optical Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71349705P | 2005-09-01 | 2005-09-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200717052A true TW200717052A (en) | 2007-05-01 |
Family
ID=37558025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095132492A TW200717052A (en) | 2005-09-01 | 2006-09-01 | Ridge technique for fabricating an optical detector and an optical waveguide |
Country Status (3)
Country | Link |
---|---|
US (1) | US7760980B2 (zh) |
TW (1) | TW200717052A (zh) |
WO (1) | WO2007027615A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7738753B2 (en) * | 2008-06-30 | 2010-06-15 | International Business Machines Corporation | CMOS compatible integrated dielectric optical waveguide coupler and fabrication |
US8290325B2 (en) * | 2008-06-30 | 2012-10-16 | Intel Corporation | Waveguide photodetector device and manufacturing method thereof |
US8411260B1 (en) | 2010-07-28 | 2013-04-02 | Kotura, Inc. | Light monitor configured to tap portion of light signal from mid-waveguide |
JP6648008B2 (ja) | 2013-06-12 | 2020-02-14 | マサチューセッツ インスティテュート オブ テクノロジー | 光変調器、波長分割多重システムおよび光変調器デバイス |
US9153717B2 (en) | 2013-08-09 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside illuminated photo-sensitive device with gradated buffer layer |
WO2015108589A2 (en) * | 2013-10-22 | 2015-07-23 | Massachusetts Institute Of Technology | Waveguide formation using cmos fabrication techniques |
US9766484B2 (en) | 2014-01-24 | 2017-09-19 | Cisco Technology, Inc. | Electro-optical modulator using waveguides with overlapping ridges |
US9239424B2 (en) | 2014-01-28 | 2016-01-19 | International Business Machines Corporation | Semiconductor device and method for fabricating the same |
JP6480577B2 (ja) * | 2015-05-28 | 2019-03-13 | 日本電信電話株式会社 | 受光素子および光集積回路 |
US11105974B2 (en) | 2015-06-30 | 2021-08-31 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
WO2017058319A2 (en) * | 2015-06-30 | 2017-04-06 | Massachusetts Institute Of Technology | Waveguide-coupled silicon-germanium photodetectors and fabrication methods for same |
GB2563278B (en) * | 2017-06-09 | 2022-10-26 | Univ Southampton | Optoelectronic device and method of manufacturing thereof |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3217856A (en) * | 1963-03-28 | 1965-11-16 | Ibm | Paper feeding mechanisms for typewriters |
US4006432A (en) * | 1974-10-15 | 1977-02-01 | Xerox Corporation | Integrated grating output coupler in diode lasers |
JPS51128280A (en) * | 1975-04-30 | 1976-11-09 | Hitachi Ltd | Optical bonding semiconojctor device and its mandfactoring metho |
US4368481A (en) * | 1979-06-19 | 1983-01-11 | Tokyo Shibaura Denki Kabushiki Kaisha | Light-driven semiconductor device |
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
US4486765A (en) | 1981-12-07 | 1984-12-04 | At&T Bell Laboratories | Avalanche photodetector including means for separating electrons and holes |
US4438447A (en) * | 1982-01-18 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Multilayered optical integrated circuit |
FR2562328B1 (fr) * | 1984-03-30 | 1987-11-27 | Menigaux Louis | Procede de fabrication d'un dispositif optique integre monolithique comprenant un laser a semi-conducteur et dispositif obtenu par ce procede |
JPS61160987A (ja) * | 1985-01-09 | 1986-07-21 | Nec Corp | 集積型半導体光素子とその製造方法 |
JPS63224252A (ja) * | 1987-02-06 | 1988-09-19 | シーメンス、アクチエンゲゼルシヤフト | 導波路−ホトダイオードアレー |
US4734910A (en) * | 1987-03-25 | 1988-03-29 | Bell Communications Research, Inc. | Self mode locked semiconductor laser diode |
DE3834335A1 (de) * | 1988-10-08 | 1990-04-12 | Telefunken Systemtechnik | Halbleiterschaltung |
DE3835601A1 (de) * | 1988-10-19 | 1990-05-03 | Messerschmitt Boelkow Blohm | Digitalrechner mit einer multiprozessor-anordnung |
US4959540A (en) * | 1989-05-15 | 1990-09-25 | International Business Machines Corporation | Optical clock system with optical time delay means |
US4980568A (en) | 1989-05-22 | 1990-12-25 | Hewlett-Packard Company | Optical isolator having high voltage isolation and high light flux light guide |
DE4011860A1 (de) * | 1990-04-09 | 1991-10-10 | Siemens Ag | Halbleiterelement mit einer silizium-schicht |
US5122852A (en) * | 1990-04-23 | 1992-06-16 | Bell Communications Research, Inc. | Grafted-crystal-film integrated optics and optoelectronic devices |
FR2662304B1 (fr) * | 1990-05-21 | 1992-07-24 | France Telecom | Procede de fabrication d'une structure integree guide-detecteur de lumiere en materiau semi-conducteur. |
JP3003944B2 (ja) * | 1990-10-04 | 2000-01-31 | オリンパス光学工業株式会社 | 固体撮像素子 |
JPH04163967A (ja) * | 1990-10-27 | 1992-06-09 | Canon Inc | 光デバイス |
US5098861A (en) * | 1991-01-08 | 1992-03-24 | Unitrode Corporation | Method of processing a semiconductor substrate including silicide bonding |
SE468027B (sv) * | 1991-02-27 | 1992-10-19 | Asea Brown Boveri | Optoelektronisk komponent med halvledarelement innefattade i sluten kapsel, vilken kapsel bestaar av en kaapa som centreras och laases relativt en sockel medelst ett byggelement |
FR2676126B1 (fr) * | 1991-04-30 | 1993-07-23 | France Telecom | Dispositif optoelectronique a guide optique et photodetecteur integres. |
US5357122A (en) * | 1991-09-05 | 1994-10-18 | Sony Corporation | Three-dimensional optical-electronic integrated circuit device with raised sections |
US5195161A (en) * | 1991-12-11 | 1993-03-16 | At&T Bell Laboratories | Optical waveguide comprising Bragg grating coupling means |
EP0567693A1 (en) * | 1992-04-27 | 1993-11-03 | BRITISH TELECOMMUNICATIONS public limited company | Optical clock recovery |
CA2096551A1 (en) * | 1992-05-22 | 1993-11-23 | Masanori Nishiguchi | Semiconductor device |
US5481515A (en) * | 1992-06-02 | 1996-01-02 | Hitachi, Ltd. | Optical information storage medium control apparatus |
EP0582986B1 (en) * | 1992-08-10 | 1999-01-20 | Canon Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US5673140A (en) * | 1992-09-08 | 1997-09-30 | British Telecommunications Public Limited Company | Non-linear semiconductor optical device |
US5463229A (en) * | 1993-04-07 | 1995-10-31 | Mitsui Toatsu Chemicals, Incorporated | Circuit board for optical devices |
JP3244205B2 (ja) * | 1993-06-17 | 2002-01-07 | 信越半導体株式会社 | 半導体装置 |
JP3345143B2 (ja) | 1993-12-27 | 2002-11-18 | 株式会社日立製作所 | 光導波路の製造方法 |
JP3234086B2 (ja) * | 1994-01-18 | 2001-12-04 | キヤノン株式会社 | 光半導体デバイス及びその製造方法 |
FR2719159B1 (fr) * | 1994-04-26 | 1996-06-14 | Adrien Bruno | Dispositif optoélectronique intégrant un photodétecteur à deux diodes. |
SE503416C2 (sv) | 1994-10-25 | 1996-06-10 | Asea Brown Boveri | Optoelektrisk komponent samt förfarande för montering av en sådan |
DE69614583T2 (de) * | 1995-01-23 | 2002-06-27 | Nat Inst Of Advanced Ind Scien | Lichtempfängliche Vorrichtung |
US5633527A (en) * | 1995-02-06 | 1997-05-27 | Sandia Corporation | Unitary lens semiconductor device |
JP2809124B2 (ja) * | 1995-02-09 | 1998-10-08 | 日本電気株式会社 | 光半導体集積素子およびその製造方法 |
JPH08330608A (ja) * | 1995-05-29 | 1996-12-13 | Oki Electric Ind Co Ltd | 受光センサおよび受発光センサ |
GB9517927D0 (en) | 1995-09-01 | 1995-11-01 | Imperial College | Optoelectrically gated microstructure |
US5682455A (en) * | 1996-02-29 | 1997-10-28 | Northern Telecom Limited | Semiconductor optical waveguide |
US5818096A (en) * | 1996-04-05 | 1998-10-06 | Nippon Telegraph And Telephone Corp. | Pin photodiode with improved frequency response and saturation output |
US5793913A (en) * | 1996-07-10 | 1998-08-11 | Northern Telecom Limited | Method for the hybrid integration of discrete elements on a semiconductor substrate |
JP2833588B2 (ja) * | 1996-07-30 | 1998-12-09 | 日本電気株式会社 | フォトディテクタおよびその製造方法 |
US6043515A (en) * | 1996-09-17 | 2000-03-28 | Kabushiki Kaisha Toshiba | Optical semiconductor device |
US5970081A (en) * | 1996-09-17 | 1999-10-19 | Kabushiki Kaisha Toshiba | Grating coupled surface emitting device |
JPH118442A (ja) * | 1996-10-07 | 1999-01-12 | Canon Inc | 光半導体デバイス、それを用いた光通信システム及び方法 |
DE19642168A1 (de) * | 1996-10-12 | 1998-04-16 | Preh Elektro Feinmechanik | Optoelektronisches Bauelement |
US6031243A (en) * | 1996-10-16 | 2000-02-29 | Geoff W. Taylor | Grating coupled vertical cavity optoelectronic devices |
FR2756384B1 (fr) * | 1996-11-28 | 1999-02-12 | Minot Christophe | Dispositif bidirectionnel de transposition entre des signaux optiques et des signaux electriques, pour systeme de communication |
US5854804A (en) | 1996-12-13 | 1998-12-29 | Intel Corporation | Method and apparatus for synchronizing a mode locked laser with a device under test |
US5812708A (en) * | 1996-12-31 | 1998-09-22 | Intel Corporation | Method and apparatus for distributing an optical clock in an integrated circuit |
FR2760101B1 (fr) * | 1997-02-24 | 1999-04-16 | Alsthom Cge Alcatel | Procede d'assemblage d'un dispositif opto-hybride |
JPH10290023A (ja) * | 1997-04-15 | 1998-10-27 | Nec Corp | 半導体光検出器 |
US5987196A (en) * | 1997-11-06 | 1999-11-16 | Micron Technology, Inc. | Semiconductor structure having an optical signal path in a substrate and method for forming the same |
EP0991126B1 (en) * | 1997-12-09 | 2006-10-18 | Seiko Epson Corporation | Method of manufacturing an electrooptic device |
US6066860A (en) * | 1997-12-25 | 2000-05-23 | Seiko Epson Corporation | Substrate for electro-optical apparatus, electro-optical apparatus, method for driving electro-optical apparatus, electronic device and projection display device |
US6320204B1 (en) * | 1997-12-25 | 2001-11-20 | Seiko Epson Corporation | Electro-optical device in which an extending portion of a channel region of a semiconductor layer is connected to a capacitor line and an electronic apparatus including the electro-optical device |
TW486581B (en) * | 1998-01-06 | 2002-05-11 | Seiko Epson Corp | Semiconductor device, substrate for electro-optical device, electro-optical device, electronic equipment, and projection display apparatus |
GB2334141A (en) * | 1998-01-30 | 1999-08-11 | Northern Telecom Ltd | Semiconductor device packaging |
DE29805392U1 (de) * | 1998-03-25 | 1999-08-05 | Heidenhain Gmbh Dr Johannes | Optoelektronische Baugruppe |
US6125217A (en) * | 1998-06-26 | 2000-09-26 | Intel Corporation | Clock distribution network |
US6202165B1 (en) * | 1998-07-23 | 2001-03-13 | Conexant Systems, Inc. | Photonic clock distribution method and apparatus for electronic systems |
EP0977063A1 (en) * | 1998-07-28 | 2000-02-02 | Interuniversitair Micro-Elektronica Centrum Vzw | A socket and a system for optoelectronic interconnection and a method of fabricating such socket and system |
US6393183B1 (en) * | 1998-08-13 | 2002-05-21 | Eugene Robert Worley | Opto-coupler device for packaging optically coupled integrated circuits |
US6343171B1 (en) * | 1998-10-09 | 2002-01-29 | Fujitsu Limited | Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making |
FI105588B (fi) * | 1998-12-10 | 2000-09-15 | Nokia Mobile Phones Ltd | Parannettu valolähdejärjestely tasomaisiin sovelluksiin |
GB2351390A (en) * | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
US6690078B1 (en) * | 1999-08-05 | 2004-02-10 | Integration Associates, Inc. | Shielded planar dielectrically isolated high speed pin photodiode and method for producing same |
JP2001066560A (ja) * | 1999-08-26 | 2001-03-16 | Nec Corp | 光波長可変フィルタ |
JP5066321B2 (ja) * | 2000-08-04 | 2012-11-07 | 台湾積體電路製造股▲ふん▼有限公司 | モノリシックoeic用埋め込み光電子材料を備えたシリコンウエハ |
CA2365499C (en) * | 2000-12-26 | 2011-02-15 | National Research Council Of Canada | High speed and high efficiency si-based photodetectors using waveguides formed with silicides for near ir applications |
US6753214B1 (en) * | 2001-02-16 | 2004-06-22 | Optical Communication Products, Inc. | Photodetector with isolation implant region for reduced device capacitance and increased bandwidth |
US20020146865A1 (en) * | 2001-04-04 | 2002-10-10 | Hoel Jeffrey H. | Method for selecting from standardized set of integrated circuit mask features |
US6658173B2 (en) | 2001-05-17 | 2003-12-02 | Optronx, Inc. | Interferometer and method of making same |
US6770134B2 (en) * | 2001-05-24 | 2004-08-03 | Applied Materials, Inc. | Method for fabricating waveguides |
US6905542B2 (en) * | 2001-05-24 | 2005-06-14 | Arkadii V. Samoilov | Waveguides such as SiGeC waveguides and method of fabricating the same |
US20020181825A1 (en) | 2001-06-01 | 2002-12-05 | Motorola, Inc. | Optical clock signal distribution |
DE10134938A1 (de) * | 2001-07-18 | 2003-02-06 | Bosch Gmbh Robert | Halbleiterbauelement sowie ein Verfahren zur Herstellung des Halbleiterbauelements |
US20030015720A1 (en) * | 2001-07-18 | 2003-01-23 | Motorola, Inc. | Structure and method for fabricating a printed circuit board utilizing a semiconductor structure and an embedded waveguide |
JP2003109773A (ja) * | 2001-07-27 | 2003-04-11 | Semiconductor Energy Lab Co Ltd | 発光装置、半導体装置およびそれらの作製方法 |
US6633692B2 (en) * | 2001-07-31 | 2003-10-14 | The National University Of Singapore | High carrier injection optical waveguide switch |
US20030052082A1 (en) | 2001-09-19 | 2003-03-20 | Anisul Khan | Method of forming optical waveguides in a semiconductor substrate |
US20030052088A1 (en) | 2001-09-19 | 2003-03-20 | Anisul Khan | Method for increasing capacitance in stacked and trench capacitors |
US6947653B2 (en) * | 2001-10-12 | 2005-09-20 | Jds Uniphase Corporation | Waveguide stress engineering and compatible passivation in planar lightwave circuits |
US20030110808A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials Inc., A Delaware Corporation | Method of manufacturing an optical core |
US20030113085A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials, Inc., A Delaware Corporation | HDP-CVD film for uppercladding application in optical waveguides |
US6624077B2 (en) * | 2001-12-17 | 2003-09-23 | Applied Materials, Inc. | Integrated circuit waveguide |
AU2002356330A1 (en) * | 2001-12-27 | 2003-07-30 | Bookham Technology Plc | An in-line waveguide photo detector |
US6642151B2 (en) * | 2002-03-06 | 2003-11-04 | Applied Materials, Inc | Techniques for plasma etching silicon-germanium |
US20040012037A1 (en) * | 2002-07-18 | 2004-01-22 | Motorola, Inc. | Hetero-integration of semiconductor materials on silicon |
US6825679B2 (en) * | 2002-07-19 | 2004-11-30 | Agilent Technologies, Inc. | Electrically conductive structure and method for implementing circuit changes on printed circuit boards |
US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
US20050072979A1 (en) * | 2002-07-22 | 2005-04-07 | Applied Materials, Inc. | Optical-ready wafers |
US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
KR100460703B1 (ko) * | 2002-08-21 | 2004-12-09 | 한국전자통신연구원 | 일체화된 광송수신 모듈과 광도파로를 구비하는 광백플레인 |
JP2007503130A (ja) * | 2003-05-29 | 2007-02-15 | アプライド マテリアルズ インコーポレイテッド | 不純物に基づく導波路検出器 |
US7122392B2 (en) * | 2003-06-30 | 2006-10-17 | Intel Corporation | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby |
US20050214964A1 (en) * | 2003-10-07 | 2005-09-29 | Applied Materials, Inc. Patent Counsel, Legal Affairs Dept. | Sige super lattice optical detectors |
US7205624B2 (en) * | 2003-10-07 | 2007-04-17 | Applied Materials, Inc. | Self-aligned implanted waveguide detector |
-
2006
- 2006-08-30 WO PCT/US2006/033545 patent/WO2007027615A1/en active Application Filing
- 2006-08-31 US US11/514,291 patent/US7760980B2/en not_active Expired - Fee Related
- 2006-09-01 TW TW095132492A patent/TW200717052A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2007027615A1 (en) | 2007-03-08 |
US20070053643A1 (en) | 2007-03-08 |
US7760980B2 (en) | 2010-07-20 |
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