TW200709415A - Gate pattern of semiconductor device and method for fabricating the same - Google Patents
Gate pattern of semiconductor device and method for fabricating the sameInfo
- Publication number
- TW200709415A TW200709415A TW095105745A TW95105745A TW200709415A TW 200709415 A TW200709415 A TW 200709415A TW 095105745 A TW095105745 A TW 095105745A TW 95105745 A TW95105745 A TW 95105745A TW 200709415 A TW200709415 A TW 200709415A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode layer
- gate
- gate electrode
- fabricating
- semiconductor device
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000009413 insulation Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050078287A KR100625795B1 (ko) | 2005-08-25 | 2005-08-25 | 반도체 소자의 게이트 및 그 형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200709415A true TW200709415A (en) | 2007-03-01 |
| TWI310610B TWI310610B (en) | 2009-06-01 |
Family
ID=37631817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095105745A TWI310610B (en) | 2005-08-25 | 2006-02-21 | Gate pattern of semiconductor device and method for fabricating the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20070045724A1 (zh) |
| JP (1) | JP2007059870A (zh) |
| KR (1) | KR100625795B1 (zh) |
| CN (1) | CN1921144A (zh) |
| TW (1) | TWI310610B (zh) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007045074B4 (de) | 2006-12-27 | 2009-06-18 | Hynix Semiconductor Inc., Ichon | Halbleiterbauelement mit Gatestapelstruktur |
| KR100844940B1 (ko) * | 2006-12-27 | 2008-07-09 | 주식회사 하이닉스반도체 | 다중 확산방지막을 구비한 반도체소자 및 그의 제조 방법 |
| KR101161796B1 (ko) | 2006-12-27 | 2012-07-03 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조방법 |
| JP2009071232A (ja) * | 2007-09-18 | 2009-04-02 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| CN101621008A (zh) * | 2008-07-03 | 2010-01-06 | 中芯国际集成电路制造(上海)有限公司 | Tft浮置栅极存储单元结构 |
| KR100940275B1 (ko) * | 2008-07-07 | 2010-02-05 | 주식회사 하이닉스반도체 | 반도체 소자의 게이트 패턴 형성방법 |
| JP5662865B2 (ja) | 2010-05-19 | 2015-02-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| US8736056B2 (en) | 2012-07-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device for reducing contact resistance of a metal |
| CN103681461B (zh) * | 2012-09-10 | 2016-06-01 | 中国科学院微电子研究所 | 半导体器件结构及其制作方法 |
| US8735280B1 (en) | 2012-12-21 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
| US9263586B2 (en) | 2014-06-06 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum well fin-like field effect transistor (QWFinFET) having a two-section combo QW structure |
| KR102650539B1 (ko) | 2016-09-23 | 2024-03-27 | 삼성전자주식회사 | 3차원 반도체 장치의 제조 방법 |
| JP6820811B2 (ja) * | 2017-08-08 | 2021-01-27 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
| TWI739653B (zh) * | 2020-11-06 | 2021-09-11 | 國立陽明交通大學 | 增加溝槽式閘極功率金氧半場效電晶體之溝槽轉角氧化層厚度的製造方法 |
| CN115954383B (zh) * | 2023-03-14 | 2023-06-02 | 长鑫存储技术有限公司 | 一种半导体结构及其形成方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246775A (ja) * | 1988-08-08 | 1990-02-16 | Seiko Epson Corp | 半導体装置の製造方法 |
| US5721148A (en) * | 1995-12-07 | 1998-02-24 | Fuji Electric Co. | Method for manufacturing MOS type semiconductor device |
| KR100295063B1 (ko) * | 1998-06-30 | 2001-08-07 | 김덕중 | 트렌치게이트구조의전력반도체장치및그제조방법 |
| KR20040095075A (ko) * | 2003-05-06 | 2004-11-12 | 삼성전자주식회사 | 반도체 소자에서 게이트 형성 방법 |
| KR20050025197A (ko) * | 2003-09-05 | 2005-03-14 | 삼성전자주식회사 | 반도체 소자에서의 리세스 게이트 구조 및 형성방법 |
| JP2005093773A (ja) | 2003-09-18 | 2005-04-07 | Fuji Electric Device Technology Co Ltd | トレンチゲート型半導体装置およびその製造方法 |
| KR100566303B1 (ko) | 2003-12-15 | 2006-03-30 | 주식회사 하이닉스반도체 | 리세스된 게이트 전극 형성 방법 |
-
2005
- 2005-08-25 KR KR1020050078287A patent/KR100625795B1/ko not_active IP Right Cessation
-
2006
- 2006-02-21 TW TW095105745A patent/TWI310610B/zh not_active IP Right Cessation
- 2006-02-24 US US11/361,378 patent/US20070045724A1/en not_active Abandoned
- 2006-04-12 JP JP2006109326A patent/JP2007059870A/ja active Pending
- 2006-04-27 CN CNA2006100789272A patent/CN1921144A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN1921144A (zh) | 2007-02-28 |
| TWI310610B (en) | 2009-06-01 |
| JP2007059870A (ja) | 2007-03-08 |
| US20070045724A1 (en) | 2007-03-01 |
| KR100625795B1 (ko) | 2006-09-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |