TW200708887A - A mask for sequential lateral solidification (SLS) process and a method thereof - Google Patents

A mask for sequential lateral solidification (SLS) process and a method thereof

Info

Publication number
TW200708887A
TW200708887A TW094128805A TW94128805A TW200708887A TW 200708887 A TW200708887 A TW 200708887A TW 094128805 A TW094128805 A TW 094128805A TW 94128805 A TW94128805 A TW 94128805A TW 200708887 A TW200708887 A TW 200708887A
Authority
TW
Taiwan
Prior art keywords
sls
mask
transparency
slit
sequential lateral
Prior art date
Application number
TW094128805A
Other languages
English (en)
Other versions
TWI299431B (en
Inventor
Ming-Wei Sun
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW094128805A priority Critical patent/TWI299431B/zh
Priority to US11/495,517 priority patent/US7666767B2/en
Publication of TW200708887A publication Critical patent/TW200708887A/zh
Application granted granted Critical
Publication of TWI299431B publication Critical patent/TWI299431B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
TW094128805A 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof TWI299431B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094128805A TWI299431B (en) 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof
US11/495,517 US7666767B2 (en) 2005-08-23 2006-07-31 Mask for sequential lateral solidification (SLS) process and a method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094128805A TWI299431B (en) 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof

Publications (2)

Publication Number Publication Date
TW200708887A true TW200708887A (en) 2007-03-01
TWI299431B TWI299431B (en) 2008-08-01

Family

ID=37804804

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094128805A TWI299431B (en) 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof

Country Status (2)

Country Link
US (1) US7666767B2 (zh)
TW (1) TWI299431B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI299431B (en) * 2005-08-23 2008-08-01 Au Optronics Corp A mask for sequential lateral solidification (sls) process and a method thereof
US8183496B2 (en) * 2008-12-30 2012-05-22 Intel Corporation Method of forming a pattern on a work piece, method of shaping a beam of electromagnetic radiation for use in said method, and aperture for shaping a beam of electromagnetic radiation
KR101666661B1 (ko) * 2010-08-26 2016-10-17 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 평판 표시 장치
KR102307499B1 (ko) 2014-10-06 2021-10-01 삼성디스플레이 주식회사 위상변이 마스크 및 이를 이용한 디스플레이 장치 제조방법

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TWI299431B (en) * 2005-08-23 2008-08-01 Au Optronics Corp A mask for sequential lateral solidification (sls) process and a method thereof
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Also Published As

Publication number Publication date
TWI299431B (en) 2008-08-01
US20070048978A1 (en) 2007-03-01
US7666767B2 (en) 2010-02-23

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