TW200708887A - A mask for sequential lateral solidification (SLS) process and a method thereof - Google Patents
A mask for sequential lateral solidification (SLS) process and a method thereofInfo
- Publication number
- TW200708887A TW200708887A TW094128805A TW94128805A TW200708887A TW 200708887 A TW200708887 A TW 200708887A TW 094128805 A TW094128805 A TW 094128805A TW 94128805 A TW94128805 A TW 94128805A TW 200708887 A TW200708887 A TW 200708887A
- Authority
- TW
- Taiwan
- Prior art keywords
- sls
- mask
- transparency
- slit
- sequential lateral
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
- H01L21/0268—Shape of mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
Abstract
A mask for sequential lateral solidification (SLS) process with at least one transparency slit is provided. The transparency slit has two long edges facing with each other, a front edge, and a rear edge. The front edge has a shape protruding outward the transparency slit. The rear edge has a shape protruding inward the transparency slit.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094128805A TWI299431B (en) | 2005-08-23 | 2005-08-23 | A mask for sequential lateral solidification (sls) process and a method thereof |
US11/495,517 US7666767B2 (en) | 2005-08-23 | 2006-07-31 | Mask for sequential lateral solidification (SLS) process and a method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094128805A TWI299431B (en) | 2005-08-23 | 2005-08-23 | A mask for sequential lateral solidification (sls) process and a method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200708887A true TW200708887A (en) | 2007-03-01 |
TWI299431B TWI299431B (en) | 2008-08-01 |
Family
ID=37804804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094128805A TWI299431B (en) | 2005-08-23 | 2005-08-23 | A mask for sequential lateral solidification (sls) process and a method thereof |
Country Status (2)
Country | Link |
---|---|
US (1) | US7666767B2 (en) |
TW (1) | TWI299431B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI299431B (en) * | 2005-08-23 | 2008-08-01 | Au Optronics Corp | A mask for sequential lateral solidification (sls) process and a method thereof |
US8183496B2 (en) * | 2008-12-30 | 2012-05-22 | Intel Corporation | Method of forming a pattern on a work piece, method of shaping a beam of electromagnetic radiation for use in said method, and aperture for shaping a beam of electromagnetic radiation |
KR101666661B1 (en) * | 2010-08-26 | 2016-10-17 | 삼성디스플레이 주식회사 | Thin film transistor substrate and flat panel display apparatus |
KR102307499B1 (en) | 2014-10-06 | 2021-10-01 | 삼성디스플레이 주식회사 | Phase shift mask and method for manufacturing display apparatus using the same |
Family Cites Families (42)
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US6555449B1 (en) * | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
KR100296110B1 (en) * | 1998-06-09 | 2001-08-07 | 구본준, 론 위라하디락사 | Method of manufacturing thin film transistor |
US6326286B1 (en) * | 1998-06-09 | 2001-12-04 | Lg. Philips Lcd Co., Ltd. | Method for crystallizing amorphous silicon layer |
US6368945B1 (en) * | 2000-03-16 | 2002-04-09 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification |
US6495405B2 (en) * | 2001-01-29 | 2002-12-17 | Sharp Laboratories Of America, Inc. | Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films |
KR100558678B1 (en) * | 2001-06-01 | 2006-03-10 | 엘지.필립스 엘시디 주식회사 | A method of crystallizing for poly-Si |
KR100424593B1 (en) * | 2001-06-07 | 2004-03-27 | 엘지.필립스 엘시디 주식회사 | A method of crystallizing Si |
US6962860B2 (en) * | 2001-11-09 | 2005-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
CN100508140C (en) * | 2001-11-30 | 2009-07-01 | 株式会社半导体能源研究所 | Manufacturing method for a semiconductor device |
EP1329946A3 (en) * | 2001-12-11 | 2005-04-06 | Sel Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including a laser crystallization step |
US6792029B2 (en) * | 2002-03-27 | 2004-09-14 | Sharp Laboratories Of America, Inc. | Method of suppressing energy spikes of a partially-coherent beam |
US6984573B2 (en) * | 2002-06-14 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and apparatus |
KR100916656B1 (en) * | 2002-10-22 | 2009-09-08 | 삼성전자주식회사 | laser irradiation apparatus and manufacturing method for polysilicon thin film transistor using the apparatus |
KR100915236B1 (en) | 2002-12-13 | 2009-09-02 | 삼성전자주식회사 | Mask and Crystallization method of silicon |
KR100646160B1 (en) * | 2002-12-31 | 2006-11-14 | 엘지.필립스 엘시디 주식회사 | A mask for sequential lateral solidification and a silicon crystallizing method using the same |
US6906349B2 (en) * | 2003-01-08 | 2005-06-14 | Samsung Electronics Co., Ltd. | Polysilicon thin film transistor array panel and manufacturing method thereof |
KR100956339B1 (en) * | 2003-02-25 | 2010-05-06 | 삼성전자주식회사 | Crystallization system of silicon and crystallization method of silicon |
JP4470395B2 (en) * | 2003-05-30 | 2010-06-02 | 日本電気株式会社 | Method and apparatus for manufacturing semiconductor thin film, and thin film transistor |
KR100492352B1 (en) * | 2003-06-12 | 2005-05-30 | 엘지.필립스 엘시디 주식회사 | A method of crystallizing silicon |
WO2005029546A2 (en) * | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
TWI366859B (en) * | 2003-09-16 | 2012-06-21 | Univ Columbia | System and method of enhancing the width of polycrystalline grains produced via sequential lateral solidification using a modified mask pattern |
KR100595455B1 (en) * | 2003-12-24 | 2006-06-30 | 엘지.필립스 엘시디 주식회사 | Laser mask and method of crystallization using thereof |
KR100698056B1 (en) * | 2003-12-26 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | Laser Beam Pattern Mask and the Method for Crystallization with the Same |
KR100572519B1 (en) * | 2003-12-26 | 2006-04-19 | 엘지.필립스 엘시디 주식회사 | Mask for laser crystallization process and laser crystallization process using the mask |
KR100606450B1 (en) * | 2003-12-29 | 2006-08-11 | 엘지.필립스 엘시디 주식회사 | Laser mask formed periodic pattern and method of crystallization using thereof |
KR20050068207A (en) * | 2003-12-29 | 2005-07-05 | 엘지.필립스 엘시디 주식회사 | Laser mask having 2-block and method of crystallization using thereof |
KR100631013B1 (en) * | 2003-12-29 | 2006-10-04 | 엘지.필립스 엘시디 주식회사 | Laser mask formed periodic pattern and method of crystallization using thereof |
KR101045204B1 (en) * | 2004-02-07 | 2011-06-30 | 삼성전자주식회사 | A method for forming single-crystal silicon thin film using sequential lateral solidificationSLS |
US7611577B2 (en) * | 2004-03-31 | 2009-11-03 | Nec Corporation | Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor |
KR101066478B1 (en) * | 2004-06-04 | 2011-09-21 | 엘지디스플레이 주식회사 | Laser Beam Pattern Mask and the Method for Crystallization with the Same |
KR20060016421A (en) * | 2004-08-17 | 2006-02-22 | 삼성전자주식회사 | Mask for sls and method of making thin film transistor using the same |
TWI298111B (en) * | 2005-06-03 | 2008-06-21 | Au Optronics Corp | A mask used in a sequential lateral solidification process |
KR101167662B1 (en) * | 2005-08-04 | 2012-07-23 | 삼성전자주식회사 | Mask for sequential lateral solidification and method of manufacturing the same |
TWI299431B (en) * | 2005-08-23 | 2008-08-01 | Au Optronics Corp | A mask for sequential lateral solidification (sls) process and a method thereof |
TWI271451B (en) * | 2005-12-19 | 2007-01-21 | Ind Tech Res Inst | Method for forming poly-silicon film |
KR100742380B1 (en) * | 2005-12-28 | 2007-07-24 | 삼성에스디아이 주식회사 | Mask pattern, method of fabricating thin film transistor and method for fabricating organic light emitting display device |
KR101191404B1 (en) * | 2006-01-12 | 2012-10-16 | 삼성디스플레이 주식회사 | Mask for silicone crystallization, method for crystallizing silicone using the same and display device |
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TWI307732B (en) * | 2006-02-17 | 2009-03-21 | Ind Tech Res Inst | Method for crystallizing silicon and mask using therefor |
KR20070109127A (en) * | 2006-05-09 | 2007-11-15 | 삼성전자주식회사 | Mask for sequential lateral solidification and method for performing sequential lateral solidification using the same |
TW200805496A (en) * | 2006-07-13 | 2008-01-16 | Ind Tech Res Inst | Method and device for forming poly-silicon film |
TWI299442B (en) * | 2006-08-18 | 2008-08-01 | Ind Tech Res Inst | Method for crystalizing amorphous silicon layer and mask therefor |
-
2005
- 2005-08-23 TW TW094128805A patent/TWI299431B/en active
-
2006
- 2006-07-31 US US11/495,517 patent/US7666767B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7666767B2 (en) | 2010-02-23 |
TWI299431B (en) | 2008-08-01 |
US20070048978A1 (en) | 2007-03-01 |
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