TW200708887A - A mask for sequential lateral solidification (SLS) process and a method thereof - Google Patents

A mask for sequential lateral solidification (SLS) process and a method thereof

Info

Publication number
TW200708887A
TW200708887A TW094128805A TW94128805A TW200708887A TW 200708887 A TW200708887 A TW 200708887A TW 094128805 A TW094128805 A TW 094128805A TW 94128805 A TW94128805 A TW 94128805A TW 200708887 A TW200708887 A TW 200708887A
Authority
TW
Taiwan
Prior art keywords
sls
mask
transparency
slit
sequential lateral
Prior art date
Application number
TW094128805A
Other languages
Chinese (zh)
Other versions
TWI299431B (en
Inventor
Ming-Wei Sun
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW094128805A priority Critical patent/TWI299431B/en
Priority to US11/495,517 priority patent/US7666767B2/en
Publication of TW200708887A publication Critical patent/TW200708887A/en
Application granted granted Critical
Publication of TWI299431B publication Critical patent/TWI299431B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H01L21/0268—Shape of mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters

Abstract

A mask for sequential lateral solidification (SLS) process with at least one transparency slit is provided. The transparency slit has two long edges facing with each other, a front edge, and a rear edge. The front edge has a shape protruding outward the transparency slit. The rear edge has a shape protruding inward the transparency slit.
TW094128805A 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof TWI299431B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094128805A TWI299431B (en) 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof
US11/495,517 US7666767B2 (en) 2005-08-23 2006-07-31 Mask for sequential lateral solidification (SLS) process and a method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094128805A TWI299431B (en) 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof

Publications (2)

Publication Number Publication Date
TW200708887A true TW200708887A (en) 2007-03-01
TWI299431B TWI299431B (en) 2008-08-01

Family

ID=37804804

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094128805A TWI299431B (en) 2005-08-23 2005-08-23 A mask for sequential lateral solidification (sls) process and a method thereof

Country Status (2)

Country Link
US (1) US7666767B2 (en)
TW (1) TWI299431B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI299431B (en) * 2005-08-23 2008-08-01 Au Optronics Corp A mask for sequential lateral solidification (sls) process and a method thereof
US8183496B2 (en) * 2008-12-30 2012-05-22 Intel Corporation Method of forming a pattern on a work piece, method of shaping a beam of electromagnetic radiation for use in said method, and aperture for shaping a beam of electromagnetic radiation
KR101666661B1 (en) * 2010-08-26 2016-10-17 삼성디스플레이 주식회사 Thin film transistor substrate and flat panel display apparatus
KR102307499B1 (en) 2014-10-06 2021-10-01 삼성디스플레이 주식회사 Phase shift mask and method for manufacturing display apparatus using the same

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* Cited by examiner, † Cited by third party
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US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
KR100296110B1 (en) * 1998-06-09 2001-08-07 구본준, 론 위라하디락사 Method of manufacturing thin film transistor
US6326286B1 (en) * 1998-06-09 2001-12-04 Lg. Philips Lcd Co., Ltd. Method for crystallizing amorphous silicon layer
US6368945B1 (en) * 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
US6495405B2 (en) * 2001-01-29 2002-12-17 Sharp Laboratories Of America, Inc. Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films
KR100558678B1 (en) * 2001-06-01 2006-03-10 엘지.필립스 엘시디 주식회사 A method of crystallizing for poly-Si
KR100424593B1 (en) * 2001-06-07 2004-03-27 엘지.필립스 엘시디 주식회사 A method of crystallizing Si
US6962860B2 (en) * 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
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EP1329946A3 (en) * 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
US6792029B2 (en) * 2002-03-27 2004-09-14 Sharp Laboratories Of America, Inc. Method of suppressing energy spikes of a partially-coherent beam
US6984573B2 (en) * 2002-06-14 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and apparatus
KR100916656B1 (en) * 2002-10-22 2009-09-08 삼성전자주식회사 laser irradiation apparatus and manufacturing method for polysilicon thin film transistor using the apparatus
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KR100646160B1 (en) * 2002-12-31 2006-11-14 엘지.필립스 엘시디 주식회사 A mask for sequential lateral solidification and a silicon crystallizing method using the same
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WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
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KR20060016421A (en) * 2004-08-17 2006-02-22 삼성전자주식회사 Mask for sls and method of making thin film transistor using the same
TWI298111B (en) * 2005-06-03 2008-06-21 Au Optronics Corp A mask used in a sequential lateral solidification process
KR101167662B1 (en) * 2005-08-04 2012-07-23 삼성전자주식회사 Mask for sequential lateral solidification and method of manufacturing the same
TWI299431B (en) * 2005-08-23 2008-08-01 Au Optronics Corp A mask for sequential lateral solidification (sls) process and a method thereof
TWI271451B (en) * 2005-12-19 2007-01-21 Ind Tech Res Inst Method for forming poly-silicon film
KR100742380B1 (en) * 2005-12-28 2007-07-24 삼성에스디아이 주식회사 Mask pattern, method of fabricating thin film transistor and method for fabricating organic light emitting display device
KR101191404B1 (en) * 2006-01-12 2012-10-16 삼성디스플레이 주식회사 Mask for silicone crystallization, method for crystallizing silicone using the same and display device
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KR20070109127A (en) * 2006-05-09 2007-11-15 삼성전자주식회사 Mask for sequential lateral solidification and method for performing sequential lateral solidification using the same
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Also Published As

Publication number Publication date
US7666767B2 (en) 2010-02-23
TWI299431B (en) 2008-08-01
US20070048978A1 (en) 2007-03-01

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