TW200703621A - Resistive memory device with improved data retention and reduced power - Google Patents
Resistive memory device with improved data retention and reduced powerInfo
- Publication number
- TW200703621A TW200703621A TW095116198A TW95116198A TW200703621A TW 200703621 A TW200703621 A TW 200703621A TW 095116198 A TW095116198 A TW 095116198A TW 95116198 A TW95116198 A TW 95116198A TW 200703621 A TW200703621 A TW 200703621A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory device
- resistive memory
- reduced power
- data retention
- improved data
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/12—Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation, e.g. trapping, doping
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/10—Resistive cells; Technology aspects
- G11C2213/15—Current-voltage curve
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/126,800 US20060256608A1 (en) | 2005-05-11 | 2005-05-11 | Resistive memory device with improved data retention and reduced power |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200703621A true TW200703621A (en) | 2007-01-16 |
Family
ID=36658629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095116198A TW200703621A (en) | 2005-05-11 | 2006-05-08 | Resistive memory device with improved data retention and reduced power |
Country Status (7)
Country | Link |
---|---|
US (1) | US20060256608A1 (zh) |
EP (1) | EP1883930A1 (zh) |
JP (1) | JP4731601B2 (zh) |
KR (1) | KR100925255B1 (zh) |
CN (1) | CN101171643A (zh) |
TW (1) | TW200703621A (zh) |
WO (1) | WO2006124235A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7830015B2 (en) * | 2005-03-25 | 2010-11-09 | Spansion Llc | Memory device with improved data retention |
US7286388B1 (en) * | 2005-06-23 | 2007-10-23 | Spansion Llc | Resistive memory device with improved data retention |
US8030637B2 (en) * | 2006-08-25 | 2011-10-04 | Qimonda Ag | Memory element using reversible switching between SP2 and SP3 hybridized carbon |
US20080102278A1 (en) | 2006-10-27 | 2008-05-01 | Franz Kreupl | Carbon filament memory and method for fabrication |
US7915603B2 (en) * | 2006-10-27 | 2011-03-29 | Qimonda Ag | Modifiable gate stack memory element |
JP5092355B2 (ja) * | 2006-10-31 | 2012-12-05 | ソニー株式会社 | 記憶装置 |
US7646624B2 (en) * | 2006-10-31 | 2010-01-12 | Spansion Llc | Method of selecting operating characteristics of a resistive memory device |
US8077495B2 (en) * | 2006-12-05 | 2011-12-13 | Spansion Llc | Method of programming, erasing and repairing a memory device |
US7599211B2 (en) * | 2007-04-10 | 2009-10-06 | Infineon Technologies Ag | Integrated circuit, resistivity changing memory device, memory module and method of fabricating an integrated circuit |
US8018002B2 (en) | 2009-06-24 | 2011-09-13 | Globalfoundries Inc. | Field effect resistor for ESD protection |
CN102403044B (zh) * | 2010-09-08 | 2014-10-15 | 北京大学 | 测试阻变随机访问存储器件的数据保持特性的方法 |
US20130160518A1 (en) * | 2011-12-22 | 2013-06-27 | Stmicroelectronics Asia Pacific Pte Ltd. | Relative humidity sensor and method for calibration thereof |
US8995167B1 (en) * | 2013-02-01 | 2015-03-31 | Adesto Technologies Corporation | Reverse program and erase cycling algorithms |
JP2013157627A (ja) * | 2013-04-11 | 2013-08-15 | Nec Corp | スイッチ素子 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6139673A (ja) * | 1984-07-31 | 1986-02-25 | Canon Inc | マトリクス回路 |
JPH07263646A (ja) * | 1994-03-25 | 1995-10-13 | Mitsubishi Chem Corp | 強誘電体ダイオード素子、並びにそれを用いたメモリー装置、フィルター素子及び疑似脳神経回路 |
KR100275107B1 (ko) * | 1997-12-30 | 2000-12-15 | 김영환 | 강유전체메모리장치및그구동방법 |
JP2000068065A (ja) * | 1998-08-13 | 2000-03-03 | Tdk Corp | 有機el素子 |
US6720589B1 (en) * | 1998-09-16 | 2004-04-13 | Kabushiki Kaisha Toshiba | Semiconductor device |
IL143649A0 (en) * | 1999-02-17 | 2002-04-21 | Ibm | Microelectronic device for storing information and method thereof |
WO2002091385A1 (en) * | 2001-05-07 | 2002-11-14 | Advanced Micro Devices, Inc. | Molecular memory cell |
US6590807B2 (en) * | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
US6838720B2 (en) * | 2001-08-13 | 2005-01-04 | Advanced Micro Devices, Inc. | Memory device with active passive layers |
EP1434232B1 (en) * | 2001-08-13 | 2007-09-19 | Advanced Micro Devices, Inc. | Memory cell |
US6894338B2 (en) * | 2002-01-11 | 2005-05-17 | International Business Machines Corporation | Rare earth metal oxide memory element based on charge storage and method for manufacturing same |
US7038935B2 (en) * | 2002-08-02 | 2006-05-02 | Unity Semiconductor Corporation | 2-terminal trapped charge memory device with voltage switchable multi-level resistance |
JP2004281913A (ja) * | 2003-03-18 | 2004-10-07 | Sharp Corp | 抵抗変化機能体およびその製造方法 |
DE60327527D1 (de) * | 2003-09-23 | 2009-06-18 | St Microelectronics Srl | Ein verbessertes feldprogrammierbares Gate-Array |
JP2005252068A (ja) * | 2004-03-05 | 2005-09-15 | Sony Corp | 記憶装置 |
US7148144B1 (en) * | 2004-09-13 | 2006-12-12 | Spansion Llc | Method of forming copper sulfide layer over substrate |
JP4760058B2 (ja) * | 2005-03-03 | 2011-08-31 | ソニー株式会社 | 記憶素子及びメモリ |
-
2005
- 2005-05-11 US US11/126,800 patent/US20060256608A1/en not_active Abandoned
-
2006
- 2006-04-26 KR KR1020077027783A patent/KR100925255B1/ko not_active IP Right Cessation
- 2006-04-26 EP EP06758720A patent/EP1883930A1/en not_active Withdrawn
- 2006-04-26 CN CNA2006800159577A patent/CN101171643A/zh active Pending
- 2006-04-26 WO PCT/US2006/016185 patent/WO2006124235A1/en active Application Filing
- 2006-04-26 JP JP2008511151A patent/JP4731601B2/ja not_active Expired - Fee Related
- 2006-05-08 TW TW095116198A patent/TW200703621A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20080009302A (ko) | 2008-01-28 |
KR100925255B1 (ko) | 2009-11-05 |
US20060256608A1 (en) | 2006-11-16 |
CN101171643A (zh) | 2008-04-30 |
EP1883930A1 (en) | 2008-02-06 |
JP4731601B2 (ja) | 2011-07-27 |
JP2008541448A (ja) | 2008-11-20 |
WO2006124235A1 (en) | 2006-11-23 |
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