TW200639975A - Flash memory device and method of fabricating the same - Google Patents

Flash memory device and method of fabricating the same

Info

Publication number
TW200639975A
TW200639975A TW094120951A TW94120951A TW200639975A TW 200639975 A TW200639975 A TW 200639975A TW 094120951 A TW094120951 A TW 094120951A TW 94120951 A TW94120951 A TW 94120951A TW 200639975 A TW200639975 A TW 200639975A
Authority
TW
Taiwan
Prior art keywords
memory device
flash memory
gates
floating
fabricating
Prior art date
Application number
TW094120951A
Other languages
English (en)
Other versions
TWI271825B (en
Inventor
Ki-Seog Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200639975A publication Critical patent/TW200639975A/zh
Application granted granted Critical
Publication of TWI271825B publication Critical patent/TWI271825B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW094120951A 2005-05-12 2005-06-23 Flash memory device and method of fabricating the same TWI271825B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050039859A KR100635199B1 (ko) 2005-05-12 2005-05-12 플래쉬 메모리 소자 및 그의 제조방법

Publications (2)

Publication Number Publication Date
TW200639975A true TW200639975A (en) 2006-11-16
TWI271825B TWI271825B (en) 2007-01-21

Family

ID=37295502

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120951A TWI271825B (en) 2005-05-12 2005-06-23 Flash memory device and method of fabricating the same

Country Status (6)

Country Link
US (2) US7306992B2 (zh)
JP (1) JP2006319293A (zh)
KR (1) KR100635199B1 (zh)
CN (1) CN1862836A (zh)
DE (1) DE102005028999A1 (zh)
TW (1) TWI271825B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101399204B (zh) * 2007-09-30 2010-08-11 中芯国际集成电路制造(上海)有限公司 栅极结构、快闪存储器及其制作方法
CN105161463B (zh) * 2014-05-30 2018-04-03 华邦电子股份有限公司 减少存储单元临界电压偏移的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616576B1 (fr) * 1987-06-12 1992-09-18 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
JP2989205B2 (ja) * 1990-02-06 1999-12-13 株式会社東芝 不揮発性半導体メモリ装置の製造方法
JPH04186882A (ja) * 1990-11-21 1992-07-03 Fujitsu Ltd 半導体装置およびその製造方法
KR920013709A (ko) * 1990-12-21 1992-07-29 김광호 불휘발성 반도체 메모리장치 및 그 제조방법
JPH08222648A (ja) * 1995-02-14 1996-08-30 Canon Inc 記憶装置
JP2914252B2 (ja) * 1995-10-14 1999-06-28 日本電気株式会社 不揮発性半導体メモリ装置の製造方法
KR100311486B1 (ko) * 1995-11-23 2002-08-17 현대반도체 주식회사 반도체메모리장치및그의제조방법
JP3735426B2 (ja) * 1996-12-11 2006-01-18 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP3629855B2 (ja) * 1996-12-24 2005-03-16 ソニー株式会社 半導体記憶素子の製造方法
US5841162A (en) * 1997-03-24 1998-11-24 Nec Corporation Non-volatile semiconductor memory with floating gate and control gate and fabrication process therefor
US6069382A (en) * 1998-02-11 2000-05-30 Cypress Semiconductor Corp. Non-volatile memory cell having a high coupling ratio
KR100297712B1 (ko) * 1998-07-23 2001-08-07 윤종용 고집적화를위한불휘발성메모리및그제조방법
JP2000150833A (ja) * 1998-11-11 2000-05-30 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
US6432773B1 (en) * 1999-04-08 2002-08-13 Microchip Technology Incorporated Memory cell having an ONO film with an ONO sidewall and method of fabricating same
JP4488565B2 (ja) * 1999-12-03 2010-06-23 富士通株式会社 半導体記憶装置の製造方法
KR20020052611A (ko) 2000-12-26 2002-07-04 윤종용 낸드형 플래쉬 메모리소자 및 그 제조방법
KR100464659B1 (ko) 2002-04-23 2005-01-03 매그나칩 반도체 유한회사 플레시 메모리소자 및 그 제조방법
JP2004319805A (ja) * 2003-04-17 2004-11-11 Nec Electronics Corp 半導体記憶装置の製造方法
KR100642901B1 (ko) 2003-10-22 2006-11-03 매그나칩 반도체 유한회사 비휘발성 메모리 소자의 제조 방법

Also Published As

Publication number Publication date
TWI271825B (en) 2007-01-21
CN1862836A (zh) 2006-11-15
US20060258102A1 (en) 2006-11-16
US7306992B2 (en) 2007-12-11
DE102005028999A1 (de) 2006-11-16
JP2006319293A (ja) 2006-11-24
KR100635199B1 (ko) 2006-10-16
US7696560B2 (en) 2010-04-13
US20090173988A1 (en) 2009-07-09

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees