TW200707652A - Semiconductor device and method for forming the same - Google Patents

Semiconductor device and method for forming the same

Info

Publication number
TW200707652A
TW200707652A TW095122791A TW95122791A TW200707652A TW 200707652 A TW200707652 A TW 200707652A TW 095122791 A TW095122791 A TW 095122791A TW 95122791 A TW95122791 A TW 95122791A TW 200707652 A TW200707652 A TW 200707652A
Authority
TW
Taiwan
Prior art keywords
transistor
forming
same
memory transistor
inverted
Prior art date
Application number
TW095122791A
Other languages
Chinese (zh)
Other versions
TWI300608B (en
Inventor
Woon-Kyung Lee
Jeong-Hyuk Choi
Dong-Jun Lee
Jai-Hyuk Song
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200707652A publication Critical patent/TW200707652A/en
Application granted granted Critical
Publication of TWI300608B publication Critical patent/TWI300608B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

There are provided a memory transistor having a select transistor with asymmetric gate electrode structure and an inverted T-shaped floating gate, and a method for forming the same. A gate electrode of the select transistor adjacent to a memory transistor has substantially an inverted T-shaped figure, whereas the gate electrode of the select transistor opposite to the memory transistor has nearly a box-shaped figure. In order to form the floating gate of the memory transistor in shape of the inverted T, a region for the select transistor is closed when opening a region for the memory transistor.
TW095122791A 2005-06-24 2006-06-23 Semiconductor device and method for forming the same TWI300608B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20050055227 2005-06-24
KR1020060021439A KR100784868B1 (en) 2005-06-24 2006-03-07 A Semiconductor Device and Method for Forming Thereof

Publications (2)

Publication Number Publication Date
TW200707652A true TW200707652A (en) 2007-02-16
TWI300608B TWI300608B (en) 2008-09-01

Family

ID=37583613

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122791A TWI300608B (en) 2005-06-24 2006-06-23 Semiconductor device and method for forming the same

Country Status (3)

Country Link
KR (1) KR100784868B1 (en)
CN (1) CN1885559B (en)
TW (1) TWI300608B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846312B (en) 2022-04-06 2024-06-21 台灣積體電路製造股份有限公司 Flash memory and manufacturing the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7785963B2 (en) * 2008-02-22 2010-08-31 Macronix International Co., Ltd. Method for fabricating inverted T-shaped floating gate memory
CN104217946A (en) * 2013-05-30 2014-12-17 中芯国际集成电路制造(上海)有限公司 Fabrication method of FinFET (Fin Field Effect Transistor)
CN104916640B (en) * 2014-03-13 2018-07-20 中芯国际集成电路制造(上海)有限公司 A kind of half floating-gate memory structure
TWI565035B (en) * 2014-04-11 2017-01-01 旺宏電子股份有限公司 Memory cell and fabricating method thereof
KR102468776B1 (en) * 2015-09-21 2022-11-22 삼성전자주식회사 Composition for wet Etching of polysilicon and method for manufacturing semiconductor device using the same
TWI622133B (en) * 2017-05-17 2018-04-21 Powerchip Technology Corporation Memory structure and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360495B1 (en) * 2000-03-16 2002-11-13 삼성전자 주식회사 Split gate type flash memory
KR20040037327A (en) * 2002-10-28 2004-05-07 삼성전자주식회사 Nonvolatile memory device having asymmetric source/drain region and fabricating method thereof
JP2004214510A (en) 2003-01-07 2004-07-29 Toshiba Corp Nonvolatile semiconductor memory and its manufacturing method
KR100559523B1 (en) * 2003-07-23 2006-03-10 동부아남반도체 주식회사 Method for manufacturing flash memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI846312B (en) 2022-04-06 2024-06-21 台灣積體電路製造股份有限公司 Flash memory and manufacturing the same

Also Published As

Publication number Publication date
CN1885559A (en) 2006-12-27
KR20060135486A (en) 2006-12-29
TWI300608B (en) 2008-09-01
CN1885559B (en) 2010-11-10
KR100784868B1 (en) 2007-12-14

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