TW200636974A - Semiconductor device and method for controlling operation thereof - Google Patents

Semiconductor device and method for controlling operation thereof

Info

Publication number
TW200636974A
TW200636974A TW094146638A TW94146638A TW200636974A TW 200636974 A TW200636974 A TW 200636974A TW 094146638 A TW094146638 A TW 094146638A TW 94146638 A TW94146638 A TW 94146638A TW 200636974 A TW200636974 A TW 200636974A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
bit lines
controlling operation
inversion
inversion layers
Prior art date
Application number
TW094146638A
Other languages
English (en)
Other versions
TWI420649B (zh
Inventor
Masaru Yano
Hideki Arakawa
Hidehiko Shiraiwa
Original Assignee
Spansion Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Llc filed Critical Spansion Llc
Publication of TW200636974A publication Critical patent/TW200636974A/zh
Application granted granted Critical
Publication of TWI420649B publication Critical patent/TWI420649B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
TW094146638A 2004-12-28 2005-12-27 半導體裝置及控制其操作之方法 TWI420649B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2004/019645 WO2006070473A1 (ja) 2004-12-28 2004-12-28 半導体装置及びその動作制御方法

Publications (2)

Publication Number Publication Date
TW200636974A true TW200636974A (en) 2006-10-16
TWI420649B TWI420649B (zh) 2013-12-21

Family

ID=36614600

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094146638A TWI420649B (zh) 2004-12-28 2005-12-27 半導體裝置及控制其操作之方法

Country Status (6)

Country Link
US (1) US7321511B2 (zh)
EP (1) EP1833091A4 (zh)
JP (1) JP5392985B2 (zh)
CN (1) CN101091252B (zh)
TW (1) TWI420649B (zh)
WO (1) WO2006070473A1 (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US9009641B2 (en) 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US7908578B2 (en) 2007-08-02 2011-03-15 Tela Innovations, Inc. Methods for designing semiconductor device with dynamic array section
US8448102B2 (en) 2006-03-09 2013-05-21 Tela Innovations, Inc. Optimizing layout of irregular structures in regular layout context
US9230910B2 (en) 2006-03-09 2016-01-05 Tela Innovations, Inc. Oversized contacts and vias in layout defined by linearly constrained topology
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US9035359B2 (en) 2006-03-09 2015-05-19 Tela Innovations, Inc. Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US8839175B2 (en) 2006-03-09 2014-09-16 Tela Innovations, Inc. Scalable meta-data objects
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
JP2007281137A (ja) * 2006-04-05 2007-10-25 Sharp Corp 不揮発性半導体記憶装置およびその製造方法、前記不揮発性半導体記憶装置を備えてなる携帯電子機器
US7838920B2 (en) * 2006-12-04 2010-11-23 Micron Technology, Inc. Trench memory structures and operation
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
US8453094B2 (en) 2008-01-31 2013-05-28 Tela Innovations, Inc. Enforcement of semiconductor structure regularity for localized transistors and interconnect
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
SG192532A1 (en) 2008-07-16 2013-08-30 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same
US9122832B2 (en) 2008-08-01 2015-09-01 Tela Innovations, Inc. Methods for controlling microloading variation in semiconductor wafer layout and fabrication
US8661392B2 (en) 2009-10-13 2014-02-25 Tela Innovations, Inc. Methods for cell boundary encroachment and layouts implementing the Same
US9159627B2 (en) 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
US8363491B2 (en) * 2011-01-28 2013-01-29 Freescale Semiconductor, Inc. Programming a non-volatile memory
US11041764B2 (en) * 2016-02-29 2021-06-22 Washington University Self-powered sensors for long-term monitoring

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0167874B1 (ko) * 1993-06-29 1999-01-15 사토 후미오 반도체 기억장치
EP0974147A1 (en) * 1997-04-11 2000-01-26 Programmable Silicon Solutions Electrically erasable nonvolatile memory
JPH11110967A (ja) * 1997-10-01 1999-04-23 Nec Corp 半導体メモリ装置
JPH11328957A (ja) * 1998-05-19 1999-11-30 Oki Micro Design:Kk 半導体記憶装置
US7190023B2 (en) * 1999-09-17 2007-03-13 Renesas Technology Corp. Semiconductor integrated circuit having discrete trap type memory cells
JP4058219B2 (ja) * 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
US6809949B2 (en) * 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
JP2004152977A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶装置
JP2005056889A (ja) * 2003-08-04 2005-03-03 Renesas Technology Corp 半導体記憶装置およびその製造方法
JP2005191542A (ja) * 2003-12-01 2005-07-14 Renesas Technology Corp 半導体記憶装置
JP2006060030A (ja) * 2004-08-20 2006-03-02 Renesas Technology Corp 半導体記憶装置
US7158420B2 (en) * 2005-04-29 2007-01-02 Macronix International Co., Ltd. Inversion bit line, charge trapping non-volatile memory and method of operating same

Also Published As

Publication number Publication date
EP1833091A4 (en) 2008-08-13
WO2006070473A1 (ja) 2006-07-06
JP5392985B2 (ja) 2014-01-22
TWI420649B (zh) 2013-12-21
CN101091252A (zh) 2007-12-19
JPWO2006070473A1 (ja) 2008-06-12
US7321511B2 (en) 2008-01-22
US20060256617A1 (en) 2006-11-16
EP1833091A1 (en) 2007-09-12
CN101091252B (zh) 2012-09-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees