TW200634970A - Method and apparatus for a reliability testing - Google Patents

Method and apparatus for a reliability testing

Info

Publication number
TW200634970A
TW200634970A TW095104569A TW95104569A TW200634970A TW 200634970 A TW200634970 A TW 200634970A TW 095104569 A TW095104569 A TW 095104569A TW 95104569 A TW95104569 A TW 95104569A TW 200634970 A TW200634970 A TW 200634970A
Authority
TW
Taiwan
Prior art keywords
under test
device under
conducting
voltage
reliability testing
Prior art date
Application number
TW095104569A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiko Takeuchi
Hiroshi Nada
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of TW200634970A publication Critical patent/TW200634970A/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/18—Subjecting similar articles in turn to test, e.g. go/no-go tests in mass production

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
TW095104569A 2005-03-18 2006-02-10 Method and apparatus for a reliability testing TW200634970A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005078529A JP2006258686A (ja) 2005-03-18 2005-03-18 信頼性測定装置および測定方法

Publications (1)

Publication Number Publication Date
TW200634970A true TW200634970A (en) 2006-10-01

Family

ID=37002498

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104569A TW200634970A (en) 2005-03-18 2006-02-10 Method and apparatus for a reliability testing

Country Status (4)

Country Link
US (1) US20060208754A1 (enExample)
JP (1) JP2006258686A (enExample)
CN (1) CN1834674A (enExample)
TW (1) TW200634970A (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006118880A (ja) * 2004-10-19 2006-05-11 Sharp Corp 半導体集積回路の検査方法及び検査装置
JP2009121835A (ja) * 2007-11-12 2009-06-04 Keithley Instruments Inc 多チャンネル・パルス試験方法
US20090267634A1 (en) * 2008-04-25 2009-10-29 Agilent Technologies, Inc. Switch Module for Semiconductor Characteristic Measurement and Measurement Method of Semiconductor Characteristics
JP2010249774A (ja) * 2009-04-20 2010-11-04 Toshiba Corp テストパタン生成装置
JP5568899B2 (ja) * 2009-06-12 2014-08-13 凸版印刷株式会社 半導体装置及び半導体装置の評価方法
CN102508143A (zh) * 2011-10-26 2012-06-20 常州天合光能有限公司 一种光伏组件的可靠性测试方法
CN103576066B (zh) * 2012-07-26 2017-05-10 中芯国际集成电路制造(上海)有限公司 一种半导体器件热载流子寿命的测量方法
CN103808974B (zh) * 2012-11-05 2016-09-07 英业达科技有限公司 开关板装置
CN104142459B (zh) * 2013-05-09 2017-07-14 中芯国际集成电路制造(上海)有限公司 半导体检测电路及检测方法
CN103389455B (zh) * 2013-08-09 2015-11-11 友达光电（苏州）有限公司 驱动芯片的检测系统及检测方法
US10282874B2 (en) * 2014-09-17 2019-05-07 Circonus, Inc. Efficient time-series histograms
KR101691639B1 (ko) * 2015-05-21 2017-01-03 재단법인 한국기계전기전자시험연구원 피코 암페어 미터 신뢰성 평가 장치 및 평가 방법
CN105478242B (zh) * 2015-12-11 2018-02-06 河北大学 高压静电分选机中的针电极电流测量装置和测量方法
US10701571B2 (en) 2016-08-12 2020-06-30 W2Bi, Inc. Automated validation and calibration portable test systems and methods
US10681570B2 (en) * 2016-08-12 2020-06-09 W2Bi, Inc. Automated configurable portable test systems and methods
CN109375605B (zh) * 2018-09-13 2020-04-21 南京信息工程大学 一种能量流综合测控系统及控制方法
CN109324277B (zh) * 2018-09-25 2020-04-14 长江存储科技有限责任公司 集成电路中栅极氧化层的tddb测试装置
CN112701210B (zh) * 2020-12-29 2022-03-11 胡建伟 一种自动修复芯片的方法及装置
CN113253088B (zh) * 2021-06-25 2021-09-28 上海瞻芯电子科技有限公司 晶体管栅氧测试装置及系统
CN113655370B (zh) * 2021-08-13 2024-08-09 海光信息技术股份有限公司 确定芯片异常测试工况的方法、装置、系统及相关设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3859357B2 (ja) * 1998-06-01 2006-12-20 松下電器産業株式会社 絶縁膜評価方法
US6535014B2 (en) * 2000-01-19 2003-03-18 Lucent Technologies, Inc. Electrical parameter tester having decoupling means
US6815970B2 (en) * 2001-08-31 2004-11-09 Texas Instruments Incorporated Method for measuring NBTI degradation effects on integrated circuits
JP2003075469A (ja) * 2001-09-05 2003-03-12 Mitsubishi Electric Corp プローブカードおよび半導体素子のウェーハレベルにおける評価方法

Also Published As

Publication number Publication date
CN1834674A (zh) 2006-09-20
JP2006258686A (ja) 2006-09-28
US20060208754A1 (en) 2006-09-21

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