TW200633282A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
TW200633282A
TW200633282A TW094139661A TW94139661A TW200633282A TW 200633282 A TW200633282 A TW 200633282A TW 094139661 A TW094139661 A TW 094139661A TW 94139661 A TW94139661 A TW 94139661A TW 200633282 A TW200633282 A TW 200633282A
Authority
TW
Taiwan
Prior art keywords
effect transistor
field effect
organic semiconductor
semiconductor part
gate insulating
Prior art date
Application number
TW094139661A
Other languages
English (en)
Inventor
Shinji Aramaki
Ryuichi Yoshiyama
Akira Ohno
Yoshimasa Sakai
Original Assignee
Mitsubishi Chem Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chem Corp filed Critical Mitsubishi Chem Corp
Publication of TW200633282A publication Critical patent/TW200633282A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/10—Composition for standardization, calibration, simulation, stabilization, preparation or preservation; processes of use in preparation for chemical testing
    • Y10T436/107497—Preparation composition [e.g., lysing or precipitation, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/14—Heterocyclic carbon compound [i.e., O, S, N, Se, Te, as only ring hetero atom]
    • Y10T436/145555—Hetero-N
    • Y10T436/147777—Plural nitrogen in the same ring [e.g., barbituates, creatinine, etc.]
    • Y10T436/148888—Uric acid

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
TW094139661A 2004-11-11 2005-11-11 Field effect transistor TW200633282A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004327627 2004-11-11
JP2005089935 2005-03-25

Publications (1)

Publication Number Publication Date
TW200633282A true TW200633282A (en) 2006-09-16

Family

ID=36336550

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094139661A TW200633282A (en) 2004-11-11 2005-11-11 Field effect transistor

Country Status (5)

Country Link
US (1) US8178397B2 (zh)
EP (1) EP1811573A4 (zh)
KR (1) KR101192615B1 (zh)
TW (1) TW200633282A (zh)
WO (1) WO2006051874A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
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US8785624B2 (en) 2007-06-13 2014-07-22 University Of Southern California Organic photosensitive optoelectronic devices with nonplanar porphyrins
JP5148211B2 (ja) * 2007-08-30 2013-02-20 出光興産株式会社 有機薄膜トランジスタ及び有機薄膜発光トランジスタ
US8258021B2 (en) 2007-10-26 2012-09-04 Palo Alto Research Center Incorporated Protecting semiconducting oxides
KR100934534B1 (ko) * 2007-11-30 2009-12-29 광주과학기술원 티아졸계 유기 반도체 화합물 및 이를 이용한 유기박막트랜지스터
US8309955B2 (en) * 2008-01-07 2012-11-13 The Johns Hopkins University Devices having high dielectric constant, ionically-polarizable materials
WO2010011658A2 (en) * 2008-07-21 2010-01-28 The Johns Hopkins University Pyromellitic diimide organic semiconductors and devices
JP2010034343A (ja) * 2008-07-30 2010-02-12 Sumitomo Chemical Co Ltd 半導体装置の製造方法および半導体装置
JP5014356B2 (ja) * 2009-01-15 2012-08-29 パナソニック株式会社 半導体装置の製造方法
CN102379042B (zh) 2009-04-10 2015-04-29 三菱化学株式会社 场效应晶体管、其制造方法以及使用了该场效应晶体管的电子器件
US20160005653A1 (en) * 2014-07-02 2016-01-07 Nxp B.V. Flexible wafer-level chip-scale packages with improved board-level reliability
CN112271217A (zh) * 2020-11-02 2021-01-26 中国工程物理研究院电子工程研究所 一种抗冲击场效应晶体管及抗冲击低噪声放大器

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JPH06291312A (ja) 1993-04-02 1994-10-18 Hitachi Ltd 電界効果型トランジスタ並びにそれを用いた液晶表示装置
TW399338B (en) * 1997-11-24 2000-07-21 Lucent Technologies Inc Method of making an organic thin film transistor and article made by the method
JPH11183935A (ja) 1997-12-22 1999-07-09 Matsushita Electric Ind Co Ltd 表示素子
JP5167569B2 (ja) 1999-06-21 2013-03-21 ケンブリッジ・エンタープライズ・リミテッド トランジスタの製造方法
US20020080102A1 (en) * 2000-07-31 2002-06-27 Yasufumi Asao Process for producing liquid crystal device and driving method of the device
CN101108783B (zh) 2001-08-09 2012-04-04 旭化成株式会社 有机半导体元件
US7167169B2 (en) * 2001-11-20 2007-01-23 Toppoly Optoelectronics Corporation Active matrix oled voltage drive pixel circuit
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US7193237B2 (en) 2002-03-27 2007-03-20 Mitsubishi Chemical Corporation Organic semiconductor material and organic electronic device
JP4572515B2 (ja) 2002-07-31 2010-11-04 三菱化学株式会社 電界効果トランジスタ
CN100594617C (zh) 2002-07-31 2010-03-17 三菱化学株式会社 场效应晶体管
KR100524552B1 (ko) * 2002-09-28 2005-10-28 삼성전자주식회사 유기 게이트 절연막 및 이를 이용한 유기박막 트랜지스터
JP2004118132A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 直流電流駆動表示装置
JP4481028B2 (ja) * 2003-02-05 2010-06-16 旭化成株式会社 有機半導体薄膜の製造方法
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WO2004087836A1 (en) * 2003-03-31 2004-10-14 Canon Kabushiki Kaisha Field effect transistor and method of producing the same
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Also Published As

Publication number Publication date
KR20070083571A (ko) 2007-08-24
EP1811573A1 (en) 2007-07-25
KR101192615B1 (ko) 2012-10-18
EP1811573A4 (en) 2010-03-24
US8178397B2 (en) 2012-05-15
US20090072224A1 (en) 2009-03-19
WO2006051874A1 (ja) 2006-05-18

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