TW200632157A - Pressure container for growing single crystal - Google Patents

Pressure container for growing single crystal

Info

Publication number
TW200632157A
TW200632157A TW095101153A TW95101153A TW200632157A TW 200632157 A TW200632157 A TW 200632157A TW 095101153 A TW095101153 A TW 095101153A TW 95101153 A TW95101153 A TW 95101153A TW 200632157 A TW200632157 A TW 200632157A
Authority
TW
Taiwan
Prior art keywords
corrosion resistant
single crystal
cover
pressure container
air
Prior art date
Application number
TW095101153A
Other languages
English (en)
Inventor
Yuji Sasagawa
Osamu Wakao
Yoshihiko Yamamura
Shigeharu Akatsuka
Keiichiro Matsushita
Original Assignee
Solvothermal Crystal Growth Technology Res Alliance
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solvothermal Crystal Growth Technology Res Alliance filed Critical Solvothermal Crystal Growth Technology Res Alliance
Publication of TW200632157A publication Critical patent/TW200632157A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/03—Pressure vessels, or vacuum vessels, having closure members or seals specially adapted therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • B01J3/042—Pressure vessels, e.g. autoclaves in the form of a tube
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
TW095101153A 2005-01-12 2006-01-12 Pressure container for growing single crystal TW200632157A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005004998A JP4276627B2 (ja) 2005-01-12 2005-01-12 単結晶育成用圧力容器およびその製造方法

Publications (1)

Publication Number Publication Date
TW200632157A true TW200632157A (en) 2006-09-16

Family

ID=36677638

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095101153A TW200632157A (en) 2005-01-12 2006-01-12 Pressure container for growing single crystal

Country Status (8)

Country Link
US (2) US9127372B2 (zh)
EP (1) EP1837420B1 (zh)
JP (1) JP4276627B2 (zh)
KR (1) KR101340090B1 (zh)
CN (1) CN101103143B (zh)
PL (1) PL1837420T3 (zh)
TW (1) TW200632157A (zh)
WO (1) WO2006075613A1 (zh)

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US8764903B2 (en) 2009-05-05 2014-07-01 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
WO2009108700A1 (en) 2008-02-25 2009-09-03 Sixpoint Materials, Inc. Method for producing group iii nitride wafers and group iii nitride wafers
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JP2012158481A (ja) * 2011-01-29 2012-08-23 Soraa Inc アンモノサーマル法によるガリウムナイトライドボウルの大規模製造設備および製造方法
KR101336805B1 (ko) * 2011-06-21 2013-12-03 한국화학연구원 단결정 성장용 압력용기
JP6300543B2 (ja) * 2014-01-29 2018-03-28 三菱ケミカル株式会社 窒化物結晶成長用容器および窒化物結晶の製造方法
CN104178801B (zh) * 2014-09-04 2016-07-27 中国有色桂林矿产地质研究院有限公司 一种含有泡沫金属结晶部件的高温高压水热釜
KR101744923B1 (ko) 2015-06-09 2017-06-08 한국화학연구원 신규한 기밀구조를 가지는 단결정 성장용 압력용기
JP6931827B2 (ja) 2017-04-07 2021-09-08 日本製鋼所Ｍ＆Ｅ株式会社 結晶製造用圧力容器
CN107354503B (zh) * 2017-07-12 2019-05-03 吴晨 一种晶体生长装置及其组装方法
CN114849590A (zh) * 2022-06-28 2022-08-05 四川航空工业川西机器有限责任公司 一种热等静压氨热法反应釜

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Also Published As

Publication number Publication date
EP1837420A4 (en) 2009-09-02
JP4276627B2 (ja) 2009-06-10
US20090013926A1 (en) 2009-01-15
KR20070099601A (ko) 2007-10-09
CN101103143A (zh) 2008-01-09
US20150182928A1 (en) 2015-07-02
US9127372B2 (en) 2015-09-08
EP1837420A1 (en) 2007-09-26
JP2006193355A (ja) 2006-07-27
KR101340090B1 (ko) 2013-12-11
EP1837420B1 (en) 2019-10-09
US9926642B2 (en) 2018-03-27
PL1837420T3 (pl) 2020-01-31
WO2006075613A1 (ja) 2006-07-20
CN101103143B (zh) 2012-06-27

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