DE102004037259A1
(de)
*
|
2004-07-31 |
2006-02-16 |
Robert Bosch Gmbh |
Verfahren zur Einstellung vorgebbarer Parameter
|
US7263027B2
(en)
*
|
2004-10-14 |
2007-08-28 |
Broadcom Corporation |
Integrated circuit chip having non-volatile on-chip memories for providing programmable functions and features
|
JP2006331085A
(ja)
*
|
2005-05-26 |
2006-12-07 |
Rohm Co Ltd |
半導体装置および電源装置
|
TW200836323A
(en)
*
|
2007-02-27 |
2008-09-01 |
Ememory Technology Inc |
Apparatus and method for trimming integrated circuit
|
US7573762B2
(en)
*
|
2007-06-06 |
2009-08-11 |
Freescale Semiconductor, Inc. |
One time programmable element system in an integrated circuit
|
JP4575407B2
(ja)
*
|
2007-08-08 |
2010-11-04 |
株式会社東芝 |
記憶装置
|
US8315117B2
(en)
*
|
2009-03-31 |
2012-11-20 |
Freescale Semiconductor, Inc. |
Integrated circuit memory having assisted access and method therefor
|
US8379466B2
(en)
|
2009-03-31 |
2013-02-19 |
Freescale Semiconductor, Inc. |
Integrated circuit having an embedded memory and method for testing the memory
|
US8634263B2
(en)
*
|
2009-04-30 |
2014-01-21 |
Freescale Semiconductor, Inc. |
Integrated circuit having memory repair information storage and method therefor
|
US8022766B2
(en)
*
|
2010-02-01 |
2011-09-20 |
Javelin Semiconductor, Inc. |
CMOS power amplifiers having integrated one-time programmable (OTP) memories
|
DE102010036449A1
(de)
*
|
2010-07-16 |
2012-01-19 |
Phoenix Contact Gmbh & Co. Kg |
Konfiguration von Schaltungsnetzen
|
US9224496B2
(en)
|
2010-08-11 |
2015-12-29 |
Shine C. Chung |
Circuit and system of aggregated area anti-fuse in CMOS processes
|
US9460807B2
(en)
|
2010-08-20 |
2016-10-04 |
Shine C. Chung |
One-time programmable memory devices using FinFET technology
|
US9019742B2
(en)
|
2010-08-20 |
2015-04-28 |
Shine C. Chung |
Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory
|
US10923204B2
(en)
|
2010-08-20 |
2021-02-16 |
Attopsemi Technology Co., Ltd |
Fully testible OTP memory
|
US10229746B2
(en)
|
2010-08-20 |
2019-03-12 |
Attopsemi Technology Co., Ltd |
OTP memory with high data security
|
US9496033B2
(en)
|
2010-08-20 |
2016-11-15 |
Attopsemi Technology Co., Ltd |
Method and system of programmable resistive devices with read capability using a low supply voltage
|
US9025357B2
(en)
|
2010-08-20 |
2015-05-05 |
Shine C. Chung |
Programmable resistive memory unit with data and reference cells
|
US10249379B2
(en)
|
2010-08-20 |
2019-04-02 |
Attopsemi Technology Co., Ltd |
One-time programmable devices having program selector for electrical fuses with extended area
|
US9236141B2
(en)
|
2010-08-20 |
2016-01-12 |
Shine C. Chung |
Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
|
US9824768B2
(en)
|
2015-03-22 |
2017-11-21 |
Attopsemi Technology Co., Ltd |
Integrated OTP memory for providing MTP memory
|
US8488359B2
(en)
|
2010-08-20 |
2013-07-16 |
Shine C. Chung |
Circuit and system of using junction diode as program selector for one-time programmable devices
|
US8559208B2
(en)
|
2010-08-20 |
2013-10-15 |
Shine C. Chung |
Programmably reversible resistive device cells using polysilicon diodes
|
US9070437B2
(en)
|
2010-08-20 |
2015-06-30 |
Shine C. Chung |
Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
|
US8830720B2
(en)
|
2010-08-20 |
2014-09-09 |
Shine C. Chung |
Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices
|
US9431127B2
(en)
|
2010-08-20 |
2016-08-30 |
Shine C. Chung |
Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices
|
US9818478B2
(en)
|
2012-12-07 |
2017-11-14 |
Attopsemi Technology Co., Ltd |
Programmable resistive device and memory using diode as selector
|
US9711237B2
(en)
|
2010-08-20 |
2017-07-18 |
Attopsemi Technology Co., Ltd. |
Method and structure for reliable electrical fuse programming
|
US9251893B2
(en)
|
2010-08-20 |
2016-02-02 |
Shine C. Chung |
Multiple-bit programmable resistive memory using diode as program selector
|
US10916317B2
(en)
|
2010-08-20 |
2021-02-09 |
Attopsemi Technology Co., Ltd |
Programmable resistance memory on thin film transistor technology
|
US9042153B2
(en)
|
2010-08-20 |
2015-05-26 |
Shine C. Chung |
Programmable resistive memory unit with multiple cells to improve yield and reliability
|
US8913449B2
(en)
*
|
2012-03-11 |
2014-12-16 |
Shine C. Chung |
System and method of in-system repairs or configurations for memories
|
US8988965B2
(en)
|
2010-11-03 |
2015-03-24 |
Shine C. Chung |
Low-pin-count non-volatile memory interface
|
US9019791B2
(en)
|
2010-11-03 |
2015-04-28 |
Shine C. Chung |
Low-pin-count non-volatile memory interface for 3D IC
|
US8923085B2
(en)
|
2010-11-03 |
2014-12-30 |
Shine C. Chung |
Low-pin-count non-volatile memory embedded in a integrated circuit without any additional pins for access
|
CN102544011A
(zh)
|
2010-12-08 |
2012-07-04 |
庄建祥 |
反熔丝存储器及电子系统
|
US10586832B2
(en)
|
2011-02-14 |
2020-03-10 |
Attopsemi Technology Co., Ltd |
One-time programmable devices using gate-all-around structures
|
US10192615B2
(en)
|
2011-02-14 |
2019-01-29 |
Attopsemi Technology Co., Ltd |
One-time programmable devices having a semiconductor fin structure with a divided active region
|
US8848423B2
(en)
|
2011-02-14 |
2014-09-30 |
Shine C. Chung |
Circuit and system of using FinFET for building programmable resistive devices
|
GB2490929B
(en)
*
|
2011-05-18 |
2018-01-24 |
Leonardo Mw Ltd |
Infrared detector system and method
|
US9136261B2
(en)
|
2011-11-15 |
2015-09-15 |
Shine C. Chung |
Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
|
US8912576B2
(en)
|
2011-11-15 |
2014-12-16 |
Shine C. Chung |
Structures and techniques for using semiconductor body to construct bipolar junction transistors
|
US9324849B2
(en)
|
2011-11-15 |
2016-04-26 |
Shine C. Chung |
Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC
|
US8917533B2
(en)
|
2012-02-06 |
2014-12-23 |
Shine C. Chung |
Circuit and system for testing a one-time programmable (OTP) memory
|
US8861249B2
(en)
|
2012-02-06 |
2014-10-14 |
Shine C. Chung |
Circuit and system of a low density one-time programmable memory
|
US9007804B2
(en)
|
2012-02-06 |
2015-04-14 |
Shine C. Chung |
Circuit and system of protective mechanisms for programmable resistive memories
|
CN103390588B
(zh)
*
|
2012-05-09 |
2015-08-19 |
无锡华润上华半导体有限公司 |
一种基于otp存储器制作mrom存储器的方法
|
US9076526B2
(en)
|
2012-09-10 |
2015-07-07 |
Shine C. Chung |
OTP memories functioning as an MTP memory
|
US9183897B2
(en)
|
2012-09-30 |
2015-11-10 |
Shine C. Chung |
Circuits and methods of a self-timed high speed SRAM
|
US9324447B2
(en)
|
2012-11-20 |
2016-04-26 |
Shine C. Chung |
Circuit and system for concurrently programming multiple bits of OTP memory devices
|
US8996736B2
(en)
*
|
2013-02-01 |
2015-03-31 |
Broadcom Corporation |
Clock domain crossing serial interface, direct latching, and response codes
|
GB2514771B
(en)
*
|
2013-06-03 |
2015-10-21 |
Broadcom Corp |
Methods of securely changing the root key of a chip, and related electronic devices and chips
|
US9412473B2
(en)
|
2014-06-16 |
2016-08-09 |
Shine C. Chung |
System and method of a novel redundancy scheme for OTP
|
US20170126414A1
(en)
*
|
2015-10-28 |
2017-05-04 |
Texas Instruments Incorporated |
Database-less authentication with physically unclonable functions
|
KR102509586B1
(ko)
|
2016-08-17 |
2023-03-14 |
매그나칩 반도체 유한회사 |
바이어스 전류 생성회로 및 이를 이용한 오티피 메모리 소자 읽기 방법
|
US10535413B2
(en)
|
2017-04-14 |
2020-01-14 |
Attopsemi Technology Co., Ltd |
Low power read operation for programmable resistive memories
|
US10726914B2
(en)
|
2017-04-14 |
2020-07-28 |
Attopsemi Technology Co. Ltd |
Programmable resistive memories with low power read operation and novel sensing scheme
|
US11062786B2
(en)
|
2017-04-14 |
2021-07-13 |
Attopsemi Technology Co., Ltd |
One-time programmable memories with low power read operation and novel sensing scheme
|
US11615859B2
(en)
|
2017-04-14 |
2023-03-28 |
Attopsemi Technology Co., Ltd |
One-time programmable memories with ultra-low power read operation and novel sensing scheme
|
US10770160B2
(en)
|
2017-11-30 |
2020-09-08 |
Attopsemi Technology Co., Ltd |
Programmable resistive memory formed by bit slices from a standard cell library
|
US10956361B2
(en)
|
2018-11-29 |
2021-03-23 |
International Business Machines Corporation |
Processor core design optimized for machine learning applications
|
US10884918B2
(en)
|
2019-01-28 |
2021-01-05 |
International Business Machines Corporation |
System implementation of one-time programmable memories
|