TW200629272A - Magnetic memory and its manufacturing method - Google Patents

Magnetic memory and its manufacturing method

Info

Publication number
TW200629272A
TW200629272A TW094126185A TW94126185A TW200629272A TW 200629272 A TW200629272 A TW 200629272A TW 094126185 A TW094126185 A TW 094126185A TW 94126185 A TW94126185 A TW 94126185A TW 200629272 A TW200629272 A TW 200629272A
Authority
TW
Taiwan
Prior art keywords
manufacturing
mram
magnetic memory
tmr
tmr element
Prior art date
Application number
TW094126185A
Other languages
English (en)
Other versions
TWI281667B (en
Inventor
Yoshiharu Kanegae
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of TW200629272A publication Critical patent/TW200629272A/zh
Application granted granted Critical
Publication of TWI281667B publication Critical patent/TWI281667B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Magnetic Heads (AREA)
TW094126185A 2004-11-29 2005-08-02 Magnetic memory and its manufacturing method TWI281667B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004343274A JP2006156608A (ja) 2004-11-29 2004-11-29 磁気メモリおよびその製造方法

Publications (2)

Publication Number Publication Date
TW200629272A true TW200629272A (en) 2006-08-16
TWI281667B TWI281667B (en) 2007-05-21

Family

ID=36567212

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126185A TWI281667B (en) 2004-11-29 2005-08-02 Magnetic memory and its manufacturing method

Country Status (5)

Country Link
US (1) US7215566B2 (zh)
JP (1) JP2006156608A (zh)
KR (1) KR100743034B1 (zh)
CN (1) CN1783334B (zh)
TW (1) TWI281667B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9553256B2 (en) 2012-11-08 2017-01-24 Japan Science And Technology Agency Spin valve element

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2004200245A (ja) * 2002-12-16 2004-07-15 Nec Corp 磁気抵抗素子及び磁気抵抗素子の製造方法
JP2008211057A (ja) 2007-02-27 2008-09-11 Toshiba Corp 磁気ランダムアクセスメモリ
JP2009194210A (ja) 2008-02-15 2009-08-27 Renesas Technology Corp 半導体装置及び半導体装置の製造方法
JP4835614B2 (ja) * 2008-03-05 2011-12-14 ソニー株式会社 不揮発性磁気メモリ装置
JP4952725B2 (ja) 2009-01-14 2012-06-13 ソニー株式会社 不揮発性磁気メモリ装置
TWI447726B (zh) * 2010-04-02 2014-08-01 Ind Tech Res Inst 磁性隨機存取記憶體
JP2012182217A (ja) * 2011-02-28 2012-09-20 Toshiba Corp 半導体記憶装置
US8946837B2 (en) 2011-07-04 2015-02-03 Kabushiki Kaisha Toshiba Semiconductor storage device with magnetoresistive element
JP5722140B2 (ja) 2011-07-04 2015-05-20 株式会社東芝 磁気抵抗素子及び磁気メモリ
JP5327293B2 (ja) * 2011-08-30 2013-10-30 ソニー株式会社 不揮発性磁気メモリ装置
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US8923038B2 (en) * 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN105633110B (zh) * 2015-09-22 2019-03-08 上海磁宇信息科技有限公司 一种平面型stt-mram记忆单元及其读写方法
WO2017090728A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
WO2020191389A1 (en) 2019-03-21 2020-09-24 Illumina, Inc. Training data generation for artificial intelligence-based sequencing
US11751488B2 (en) 2020-01-24 2023-09-05 Tdk Corporation Spin element and reservoir element

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001014616A (ja) * 1999-06-30 2001-01-19 Tdk Corp 磁気変換素子、薄膜磁気ヘッドおよびそれらの製造方法
JP4568926B2 (ja) * 1999-07-14 2010-10-27 ソニー株式会社 磁気機能素子及び磁気記録装置
DE10041378C1 (de) * 2000-08-23 2002-05-16 Infineon Technologies Ag MRAM-Anordnung
US20030179071A1 (en) * 2001-05-15 2003-09-25 Masayoshi Hiramoto Magnetoresistive element
JP3869682B2 (ja) 2001-06-12 2007-01-17 株式会社ルネサステクノロジ 半導体装置
KR100451660B1 (ko) * 2001-12-05 2004-10-08 대한민국(서울대학교 총장) 전압을 이용한 강자성박막의 자화용이축 제어방법 및 이를이용한 비휘발성, 초고집적, 초절전형 자기메모리와정보기록방법
KR100829556B1 (ko) * 2002-05-29 2008-05-14 삼성전자주식회사 자기 저항 램 및 그의 제조방법
JP3571034B2 (ja) 2002-06-18 2004-09-29 独立行政法人 科学技術振興機構 磁気抵抗ランダムアクセスメモリー装置
JP2004186659A (ja) * 2002-10-07 2004-07-02 Alps Electric Co Ltd 磁気検出素子
JP3951902B2 (ja) * 2002-11-25 2007-08-01 ヤマハ株式会社 磁気トンネル接合素子の製法と磁気トンネル接合装置
JP2004273969A (ja) 2003-03-12 2004-09-30 Sony Corp 磁気記憶装置の製造方法
JP2004319725A (ja) * 2003-04-16 2004-11-11 Fujitsu Ltd 磁気ランダムアクセスメモリ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9553256B2 (en) 2012-11-08 2017-01-24 Japan Science And Technology Agency Spin valve element

Also Published As

Publication number Publication date
CN1783334B (zh) 2010-04-21
CN1783334A (zh) 2006-06-07
KR20060059793A (ko) 2006-06-02
TWI281667B (en) 2007-05-21
US20060114714A1 (en) 2006-06-01
JP2006156608A (ja) 2006-06-15
KR100743034B1 (ko) 2007-07-27
US7215566B2 (en) 2007-05-08

Similar Documents

Publication Publication Date Title
TW200629272A (en) Magnetic memory and its manufacturing method
WO2005079528A3 (en) Spin transfer magnetic element having low saturation magnetization free layers
TW200713648A (en) Magnetic devices having stabilized free ferromagnetic layer or multilayered free ferromagnetic layer
TWI315907B (en) Synthetic antiferromagnetic structure for magnetoelectronic devices
WO2005067472A3 (en) Synthetic antiferromagnet structures for use in mtjs in mram technology
SG153012A1 (en) Magnetic element with thermally-assisted writing
WO2005082061A3 (en) Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
WO2003036734A2 (en) Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
WO2003036734A1 (en) Magnetoresistance effect element, magetic memory element, magnetic memory device, and their manufacturing method
TW200729568A (en) Magnetoresistance effect device
TW200626922A (en) Magnetic sensor using giant magnetoresistive elements and method for manufacturing the same
TW200617953A (en) Magnetic random access memory array with coupled soft-adjacent magnetic layer
WO2008050045A3 (fr) Dispositif magnetique a aimantation perpendiculaire et a couche intercalaire compensatrice d'interactions
DE602004005905D1 (de) Magnetoresistive Vorrichtung mit austauschgekoppelte Struktur mit halbmetallischer ferromagnetischer Heuslerschen Legierung in der Pinning-Schicht
ATE357732T1 (de) Amorphe legierungen für magneteinrichtungen
WO2003034437A3 (en) Writing to a mram element comprising a synthetic antiferromagnetic layer
WO2006063007A3 (en) Method and system for providing a highly textured magnetoresistance element and magnetic memory
WO2005112034A3 (en) Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same
WO2008133107A1 (ja) 磁気抵抗素子、ｍｒａｍ、及び磁気センサー
EP1321943A3 (en) Magnetic memory
ATE551702T1 (de) Widerstand mit vorbestimmtem temperaturkoeffizienten
TW200727312A (en) Embedded inductor structure and manufacturing method thereof
ATE421756T1 (de) Fühlerschicht aus synthetischer ferrimagnet für mram-benutzungen mit hoher dichte
SG118382A1 (en) Extraordinary magnetoresistance sensor with perpendicular magnetic biasing by an antiferromagnetic/ferromagnetic exchange-coupled structure
SG178945A1 (en) A sensor arrangement