TW200629000A - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method

Info

Publication number
TW200629000A
TW200629000A TW094144281A TW94144281A TW200629000A TW 200629000 A TW200629000 A TW 200629000A TW 094144281 A TW094144281 A TW 094144281A TW 94144281 A TW94144281 A TW 94144281A TW 200629000 A TW200629000 A TW 200629000A
Authority
TW
Taiwan
Prior art keywords
radiation
beams
array
sub
substrate
Prior art date
Application number
TW094144281A
Other languages
English (en)
Inventor
Patricius Aloysius Jacobus Tinnemans
Johannes Jacobus Matheus Baselmans
Laurentius Jorritsma
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW200629000A publication Critical patent/TW200629000A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
TW094144281A 2004-12-27 2005-12-14 Lithographic apparatus and device manufacturing method TW200629000A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/020,642 US7126672B2 (en) 2004-12-27 2004-12-27 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
TW200629000A true TW200629000A (en) 2006-08-16

Family

ID=35892520

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144281A TW200629000A (en) 2004-12-27 2005-12-14 Lithographic apparatus and device manufacturing method

Country Status (8)

Country Link
US (2) US7126672B2 (zh)
EP (1) EP1674934B1 (zh)
JP (1) JP4223036B2 (zh)
KR (1) KR100734594B1 (zh)
CN (1) CN100524030C (zh)
DE (1) DE602005007563D1 (zh)
SG (1) SG123688A1 (zh)
TW (1) TW200629000A (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9188874B1 (en) 2011-05-09 2015-11-17 Kenneth C. Johnson Spot-array imaging system for maskless lithography and parallel confocal microscopy
US8994920B1 (en) 2010-05-07 2015-03-31 Kenneth C. Johnson Optical systems and methods for absorbance modulation
US9097983B2 (en) * 2011-05-09 2015-08-04 Kenneth C. Johnson Scanned-spot-array EUV lithography system
US7126672B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317510B2 (en) * 2004-12-27 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602006002044D1 (de) * 2005-02-23 2008-09-18 Asml Masktools Bv Methode und Apparat zur Optimierung der Beleuchtung einer Schicht eines vollständigen Chips
US7209275B2 (en) * 2005-06-30 2007-04-24 Asml Holding N.V. Method and system for maskless lithography real-time pattern rasterization and using computationally coupled mirrors to achieve optimum feature representation
DE102006019963B4 (de) * 2006-04-28 2023-12-07 Envisiontec Gmbh Vorrichtung und Verfahren zur Herstellung eines dreidimensionalen Objekts durch schichtweises Verfestigen eines unter Einwirkung von elektromagnetischer Strahlung verfestigbaren Materials mittels Maskenbelichtung
US7695950B2 (en) * 2006-05-17 2010-04-13 E. I. Du Pont De Nemours And Company Δ5 desaturase and its use in making polyunsaturated fatty acids
US7707538B2 (en) * 2007-06-15 2010-04-27 Brion Technologies, Inc. Multivariable solver for optical proximity correction
US20090199152A1 (en) * 2008-02-06 2009-08-06 Micronic Laser Systems Ab Methods and apparatuses for reducing mura effects in generated patterns
KR101680754B1 (ko) * 2010-02-18 2016-12-13 삼성디스플레이 주식회사 광학 헤드의 중첩 거리 결정 방법 및 이를 이용한 디지털 노광 장치
JP5709465B2 (ja) * 2010-10-29 2015-04-30 キヤノン株式会社 描画装置、および、物品の製造方法
US8660786B2 (en) * 2011-08-17 2014-02-25 Raytheon Company Positioning module
US9696636B2 (en) * 2011-11-29 2017-07-04 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program
WO2013083383A1 (en) * 2011-12-06 2013-06-13 Asml Netherlands B.V. A lithography apparatus, an apparatus for providing setpoint data, a device manufacturing method, a method of calculating setpoint data and a computer program
US9568831B2 (en) 2012-01-17 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8584057B2 (en) * 2012-03-01 2013-11-12 Taiwan Semiconductor Manufacturing Copmany, Ltd. Non-directional dithering methods
TWI638241B (zh) 2012-03-26 2018-10-11 日商尼康股份有限公司 基板處理裝置、處理裝置及元件製造方法
WO2014140047A2 (en) * 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
WO2016106347A1 (en) * 2014-12-22 2016-06-30 The Research Foundation For The State University Of New York Determination of spatial distribution of charged particle beams
JP6723564B2 (ja) * 2018-02-20 2020-07-15 株式会社ピーエムティー 露光方法
KR102637105B1 (ko) * 2018-07-13 2024-02-15 삼성전자주식회사 영상 데이터를 처리하는 방법 및 장치

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JP2938568B2 (ja) * 1990-05-02 1999-08-23 フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン 照明装置
US5229872A (en) * 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US6219015B1 (en) * 1992-04-28 2001-04-17 The Board Of Directors Of The Leland Stanford, Junior University Method and apparatus for using an array of grating light valves to produce multicolor optical images
JP3224041B2 (ja) * 1992-07-29 2001-10-29 株式会社ニコン 露光方法及び装置
US5729331A (en) * 1993-06-30 1998-03-17 Nikon Corporation Exposure apparatus, optical projection apparatus and a method for adjusting the optical projection apparatus
JP3339149B2 (ja) * 1993-12-08 2002-10-28 株式会社ニコン 走査型露光装置ならびに露光方法
US5677703A (en) * 1995-01-06 1997-10-14 Texas Instruments Incorporated Data loading circuit for digital micro-mirror device
US5530482A (en) * 1995-03-21 1996-06-25 Texas Instruments Incorporated Pixel data processing for spatial light modulator having staggered pixels
AU1975197A (en) * 1996-02-28 1997-10-01 Kenneth C. Johnson Microlens scanner for microlithography and wide-field confocal microscopy
EP0956516B1 (en) 1997-01-29 2002-04-10 Micronic Laser Systems Ab Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate
US6177980B1 (en) * 1997-02-20 2001-01-23 Kenneth C. Johnson High-throughput, maskless lithography system
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US5982553A (en) * 1997-03-20 1999-11-09 Silicon Light Machines Display device incorporating one-dimensional grating light-valve array
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6720565B2 (en) * 1999-06-30 2004-04-13 Applied Materials, Inc. Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
TW520526B (en) * 2000-05-22 2003-02-11 Nikon Corp Exposure apparatus, method for manufacturing thereof, method for exposing and method for manufacturing micro-device
WO2003038518A1 (en) * 2001-10-30 2003-05-08 Pixelligent Technologies Llc Advanced exposure techniques for programmable lithography
CN101446773A (zh) * 2001-11-07 2009-06-03 应用材料有限公司 无掩膜光子电子点格栅阵列光刻机
KR20050044371A (ko) * 2001-11-07 2005-05-12 어플라이드 머티어리얼스, 인코포레이티드 광학 스폿 그리드 어레이 프린터
JP3563384B2 (ja) * 2001-11-08 2004-09-08 大日本スクリーン製造株式会社 画像記録装置
KR100545297B1 (ko) 2002-06-12 2006-01-24 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
EP1482373A1 (en) * 2003-05-30 2004-12-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG125970A1 (en) * 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7317510B2 (en) * 2004-12-27 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7126672B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Also Published As

Publication number Publication date
JP4223036B2 (ja) 2009-02-12
US7239373B2 (en) 2007-07-03
EP1674934A1 (en) 2006-06-28
CN100524030C (zh) 2009-08-05
EP1674934B1 (en) 2008-06-18
US20060139600A1 (en) 2006-06-29
DE602005007563D1 (de) 2008-07-31
SG123688A1 (en) 2006-07-26
CN1797207A (zh) 2006-07-05
KR20060074870A (ko) 2006-07-03
JP2006186364A (ja) 2006-07-13
US20070030470A1 (en) 2007-02-08
US7126672B2 (en) 2006-10-24
KR100734594B1 (ko) 2007-07-02

Similar Documents

Publication Publication Date Title
TW200629000A (en) Lithographic apparatus and device manufacturing method
TW200628999A (en) Lithographic apparatus and device manufacturing method
TWI266358B (en) Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus
TW200627084A (en) Lithographic apparatus and device manufacturing method
TWI265381B (en) Method for coating a substrate for EUV lithography and substrate with photoresist layer
TW200707122A (en) Exposure method and apparatus
WO2010032224A3 (en) Lithographic apparatus, programmable patterning device and lithographic method
ATE538412T1 (de) Lithographisches system
TW200602813A (en) Lithographic apparatus and device manufacturing method
JP2006024941A5 (zh)
ATE350692T1 (de) Zusammensetzungen und verfahren für direkt schreibende optische lithographie
SG139682A1 (en) System and method to compensate for critical dimension non-uniformity in a lithography system
SG114755A1 (en) Lithographic apparatus and device manufacturing method
TW200705109A (en) Lithographic apparatus and device manufacturing method utilizing data filtering
JP2005236292A5 (zh)
TW200502714A (en) Maskless lithography systems and methods utilizing spatial light modulator arrays
TW200611079A (en) Lithographic apparatus, control system and device manufacturing method
TW200951645A (en) Lithographic apparatus and device manufacturing method
WO2006083685A3 (en) Method and system for a maskless lithography rasterization tecnique based on global optimization
TW200600982A (en) Lithographic apparatus and device manufacturing method
TW200703456A (en) Pattern writing apparatus and block number determining method
WO2005064401A3 (en) Lithographic apparatus having a debris-mitigation system, a source for producing euv radiation having a debris mitigation system and a method for mitigating debris
TW200500822A (en) Lithographic apparatus and device manufacturing method
TW200625023A (en) Lithographic apparatus and device manufacturing method
KR20120021198A (ko) 노광장치