TW200627558A - High withstand voltage semiconductor device covered with resin, and its manufacturing method - Google Patents
High withstand voltage semiconductor device covered with resin, and its manufacturing methodInfo
- Publication number
- TW200627558A TW200627558A TW094134971A TW94134971A TW200627558A TW 200627558 A TW200627558 A TW 200627558A TW 094134971 A TW094134971 A TW 094134971A TW 94134971 A TW94134971 A TW 94134971A TW 200627558 A TW200627558 A TW 200627558A
- Authority
- TW
- Taiwan
- Prior art keywords
- withstand voltage
- resin
- siloxane
- high withstand
- chip
- Prior art date
Links
- 239000011347 resin Substances 0.000 title abstract 5
- 229920005989 resin Polymers 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920001558 organosilicon polymer Polymers 0.000 abstract 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 abstract 2
- 238000007789 sealing Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910002808 Si–O–Si Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1027—IV
- H01L2924/10272—Silicon Carbide [SiC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004293873A JP4596875B2 (ja) | 2004-10-06 | 2004-10-06 | 樹脂で被覆した高耐電圧半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200627558A true TW200627558A (en) | 2006-08-01 |
Family
ID=36142716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094134971A TW200627558A (en) | 2004-10-06 | 2005-10-06 | High withstand voltage semiconductor device covered with resin, and its manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070262472A1 (zh) |
EP (1) | EP1801873A1 (zh) |
JP (1) | JP4596875B2 (zh) |
KR (1) | KR20070083889A (zh) |
CN (1) | CN101053078A (zh) |
TW (1) | TW200627558A (zh) |
WO (1) | WO2006038644A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010066848A (ja) * | 2008-09-09 | 2010-03-25 | Toshiba Storage Device Corp | 記憶装置の管理方法及び記憶装置、並びに記憶システム |
JP5707316B2 (ja) * | 2009-03-12 | 2015-04-30 | ナミックス株式会社 | 電子部品の実装方法 |
JP2011023463A (ja) * | 2009-07-14 | 2011-02-03 | Denso Corp | 半導体モジュール |
US9257511B2 (en) * | 2013-03-26 | 2016-02-09 | Infineon Technologies Ag | Silicon carbide device and a method for forming a silicon carbide device |
US9035322B2 (en) | 2013-03-26 | 2015-05-19 | Infineon Technologies Ag | Silicon carbide device and a method for manufacturing a silicon carbide device |
DE102015210061A1 (de) * | 2015-06-01 | 2016-12-01 | Siemens Aktiengesellschaft | Verfahren zur elektrischen Kontaktierung eines Bauteils und Bauteilmodul |
DE102016109356A1 (de) * | 2016-05-20 | 2017-11-23 | Infineon Technologies Ag | Chipgehäuse und verfahren zum bilden eines chipgehäuses |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5317196A (en) * | 1992-08-28 | 1994-05-31 | At&T Bell Laboratories | Encapsulant method and apparatus |
US5589129A (en) * | 1993-02-19 | 1996-12-31 | Kabushiki Kaisha Toshiba | Method of manufacturing a molding using a filler or an additive concentrated on an arbitrary portion or distributed at a gradient concentration |
JP3523098B2 (ja) * | 1998-12-28 | 2004-04-26 | 信越化学工業株式会社 | 付加硬化型シリコーン組成物 |
JP3595731B2 (ja) * | 1999-06-21 | 2004-12-02 | 信越化学工業株式会社 | 半導体装置封止用付加硬化型シリコーン組成物及び半導体装置 |
JP2002064165A (ja) * | 2000-08-21 | 2002-02-28 | Hitachi Ltd | ダイオード及びその製造方法 |
JP3761857B2 (ja) * | 2002-10-11 | 2006-03-29 | 三菱電機株式会社 | 半導体装置 |
-
2004
- 2004-10-06 JP JP2004293873A patent/JP4596875B2/ja not_active Expired - Fee Related
-
2005
- 2005-10-05 EP EP05790544A patent/EP1801873A1/en not_active Withdrawn
- 2005-10-05 WO PCT/JP2005/018420 patent/WO2006038644A1/ja active Application Filing
- 2005-10-05 US US11/664,586 patent/US20070262472A1/en not_active Abandoned
- 2005-10-05 CN CNA2005800339306A patent/CN101053078A/zh active Pending
- 2005-10-05 KR KR1020077009933A patent/KR20070083889A/ko not_active Application Discontinuation
- 2005-10-06 TW TW094134971A patent/TW200627558A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EP1801873A1 (en) | 2007-06-27 |
WO2006038644A1 (ja) | 2006-04-13 |
JP2006108437A (ja) | 2006-04-20 |
JP4596875B2 (ja) | 2010-12-15 |
US20070262472A1 (en) | 2007-11-15 |
KR20070083889A (ko) | 2007-08-24 |
CN101053078A (zh) | 2007-10-10 |
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