TW200625611A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- TW200625611A TW200625611A TW094128065A TW94128065A TW200625611A TW 200625611 A TW200625611 A TW 200625611A TW 094128065 A TW094128065 A TW 094128065A TW 94128065 A TW94128065 A TW 94128065A TW 200625611 A TW200625611 A TW 200625611A
- Authority
- TW
- Taiwan
- Prior art keywords
- pixels
- pixel
- photodiodes
- solid
- image pickup
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004295129A JP2006108497A (ja) | 2004-10-07 | 2004-10-07 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200625611A true TW200625611A (en) | 2006-07-16 |
TWI278993B TWI278993B (en) | 2007-04-11 |
Family
ID=36142438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094128065A TWI278993B (en) | 2004-10-07 | 2005-08-17 | Solid-state image pickup device |
Country Status (7)
Country | Link |
---|---|
US (1) | US20070126039A1 (zh) |
EP (1) | EP1684351A1 (zh) |
JP (1) | JP2006108497A (zh) |
KR (1) | KR100820520B1 (zh) |
CN (1) | CN100429780C (zh) |
TW (1) | TWI278993B (zh) |
WO (1) | WO2006038353A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4525671B2 (ja) * | 2006-12-08 | 2010-08-18 | ソニー株式会社 | 固体撮像装置 |
JP2008172580A (ja) * | 2007-01-12 | 2008-07-24 | Toshiba Corp | 固体撮像素子及び固体撮像装置 |
US7924333B2 (en) | 2007-08-17 | 2011-04-12 | Aptina Imaging Corporation | Method and apparatus providing shared pixel straight gate architecture |
US7989749B2 (en) | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
US8525914B2 (en) * | 2007-10-25 | 2013-09-03 | DigitalOptics Corporation Europe Limited | Imaging system with multi-state zoom and associated methods |
JP5038188B2 (ja) * | 2008-02-28 | 2012-10-03 | キヤノン株式会社 | 撮像装置及びそれを用いた撮像システム |
JP5263220B2 (ja) * | 2010-04-16 | 2013-08-14 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
JP5131309B2 (ja) * | 2010-04-16 | 2013-01-30 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
KR102017713B1 (ko) | 2012-05-31 | 2019-09-03 | 삼성전자주식회사 | 시모스 이미지 센서 |
JP6246144B2 (ja) * | 2015-02-16 | 2017-12-13 | キヤノン株式会社 | 固体撮像装置 |
JP2018046089A (ja) * | 2016-09-13 | 2018-03-22 | セイコーエプソン株式会社 | 固体撮像装置及びその製造方法、並びに、電子機器 |
KR20230036720A (ko) * | 2021-09-08 | 2023-03-15 | 삼성전자주식회사 | 단위 픽셀, 이미지 센서 및 차량 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3337976B2 (ja) * | 1998-04-30 | 2002-10-28 | キヤノン株式会社 | 撮像装置 |
US6043478A (en) * | 1998-06-25 | 2000-03-28 | Industrial Technology Research Institute | Active pixel sensor with shared readout structure |
US6657665B1 (en) * | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
US6221687B1 (en) * | 1999-12-23 | 2001-04-24 | Tower Semiconductor Ltd. | Color image sensor with embedded microlens array |
JP3840203B2 (ja) * | 2002-06-27 | 2006-11-01 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置を用いたカメラシステム |
US6861686B2 (en) * | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
JP2004228425A (ja) * | 2003-01-24 | 2004-08-12 | Renesas Technology Corp | Cmosイメージセンサの製造方法 |
JP4553612B2 (ja) * | 2004-03-18 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 撮像素子およびそれを備えた撮像装置 |
-
2004
- 2004-10-07 JP JP2004295129A patent/JP2006108497A/ja not_active Ceased
-
2005
- 2005-07-01 EP EP05755825A patent/EP1684351A1/en not_active Withdrawn
- 2005-07-01 KR KR1020067003140A patent/KR100820520B1/ko not_active IP Right Cessation
- 2005-07-01 WO PCT/JP2005/012194 patent/WO2006038353A1/ja not_active Application Discontinuation
- 2005-07-01 CN CNB2005800007103A patent/CN100429780C/zh not_active Expired - Fee Related
- 2005-07-01 US US10/574,775 patent/US20070126039A1/en not_active Abandoned
- 2005-08-17 TW TW094128065A patent/TWI278993B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1839477A (zh) | 2006-09-27 |
EP1684351A1 (en) | 2006-07-26 |
JP2006108497A (ja) | 2006-04-20 |
KR100820520B1 (ko) | 2008-04-07 |
KR20060060690A (ko) | 2006-06-05 |
TWI278993B (en) | 2007-04-11 |
WO2006038353A1 (ja) | 2006-04-13 |
CN100429780C (zh) | 2008-10-29 |
US20070126039A1 (en) | 2007-06-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |