TW200620652A - Semiconductor device and method of manufacturing such a device - Google Patents
Semiconductor device and method of manufacturing such a deviceInfo
- Publication number
- TW200620652A TW200620652A TW094123615A TW94123615A TW200620652A TW 200620652 A TW200620652 A TW 200620652A TW 094123615 A TW094123615 A TW 094123615A TW 94123615 A TW94123615 A TW 94123615A TW 200620652 A TW200620652 A TW 200620652A
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- conductivity type
- base
- collector
- base region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66265—Thin film bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
- H01L29/365—Planar doping, e.g. atomic-plane doping, delta-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04103382 | 2004-07-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200620652A true TW200620652A (en) | 2006-06-16 |
Family
ID=34972814
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094123615A TW200620652A (en) | 2004-07-15 | 2005-07-12 | Semiconductor device and method of manufacturing such a device |
Country Status (7)
Country | Link |
---|---|
US (1) | US7671447B2 (zh) |
EP (1) | EP1771887B1 (zh) |
JP (1) | JP5090163B2 (zh) |
AT (1) | ATE400063T1 (zh) |
DE (1) | DE602005007904D1 (zh) |
TW (1) | TW200620652A (zh) |
WO (1) | WO2006008689A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8669640B2 (en) * | 2009-07-14 | 2014-03-11 | Freescale Semiconductor, Inc. | Bipolar transistor |
US9059195B2 (en) | 2013-05-29 | 2015-06-16 | International Business Machines Corporation | Lateral bipolar transistors having partially-depleted intrinsic base |
US9496184B2 (en) | 2014-04-04 | 2016-11-15 | International Business Machines Corporation | III-V, SiGe, or Ge base lateral bipolar transistor and CMOS hybrid technology |
US11245639B2 (en) | 2014-09-03 | 2022-02-08 | International Business Machines Corporation | Composition of persistent object instances linking resources across multiple, disparate systems |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01241156A (ja) * | 1988-03-23 | 1989-09-26 | Hitachi Ltd | 半導体装置 |
US5198692A (en) * | 1989-01-09 | 1993-03-30 | Kabushiki Kaisha Toshiba | Semiconductor device including bipolar transistor with step impurity profile having low and high concentration emitter regions |
DE69109884T2 (de) * | 1990-02-09 | 1995-10-26 | Canon Kk | Tintenstrahlaufzeichnungssystem. |
JPH0499328A (ja) * | 1990-08-18 | 1992-03-31 | Nec Corp | バイポーラトランジスタ |
JPH05166825A (ja) * | 1991-12-17 | 1993-07-02 | Hitachi Ltd | 半導体装置 |
JP3233690B2 (ja) * | 1992-07-16 | 2001-11-26 | ローム株式会社 | バイポーラトランジスタの製法 |
JPH06252158A (ja) * | 1993-02-26 | 1994-09-09 | Toshiba Corp | 半導体装置 |
FR2778022B1 (fr) * | 1998-04-22 | 2001-07-13 | France Telecom | Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication |
JP3708881B2 (ja) * | 2001-01-31 | 2005-10-19 | 松下電器産業株式会社 | 半導体結晶膜,その製造方法,半導体装置及びその製造方法 |
JP2002270815A (ja) * | 2001-03-14 | 2002-09-20 | Hitachi Ltd | 半導体装置及びその半導体装置により構成された駆動回路 |
DE10160509A1 (de) * | 2001-11-30 | 2003-06-12 | Ihp Gmbh | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
JP3565274B2 (ja) * | 2002-02-25 | 2004-09-15 | 住友電気工業株式会社 | バイポーラトランジスタ |
JP3719998B2 (ja) * | 2002-04-01 | 2005-11-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
-
2005
- 2005-07-07 DE DE602005007904T patent/DE602005007904D1/de active Active
- 2005-07-07 US US11/632,614 patent/US7671447B2/en active Active
- 2005-07-07 WO PCT/IB2005/052260 patent/WO2006008689A1/en active IP Right Grant
- 2005-07-07 AT AT05759723T patent/ATE400063T1/de not_active IP Right Cessation
- 2005-07-07 EP EP05759723A patent/EP1771887B1/en not_active Not-in-force
- 2005-07-07 JP JP2007520947A patent/JP5090163B2/ja not_active Expired - Fee Related
- 2005-07-12 TW TW094123615A patent/TW200620652A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US7671447B2 (en) | 2010-03-02 |
JP5090163B2 (ja) | 2012-12-05 |
WO2006008689A1 (en) | 2006-01-26 |
DE602005007904D1 (de) | 2008-08-14 |
EP1771887A1 (en) | 2007-04-11 |
EP1771887B1 (en) | 2008-07-02 |
US20080083968A1 (en) | 2008-04-10 |
JP2008507125A (ja) | 2008-03-06 |
ATE400063T1 (de) | 2008-07-15 |
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