TW200620454A - Plasma processing apparatus and impedance control method - Google Patents

Plasma processing apparatus and impedance control method

Info

Publication number
TW200620454A
TW200620454A TW094118229A TW94118229A TW200620454A TW 200620454 A TW200620454 A TW 200620454A TW 094118229 A TW094118229 A TW 094118229A TW 94118229 A TW94118229 A TW 94118229A TW 200620454 A TW200620454 A TW 200620454A
Authority
TW
Taiwan
Prior art keywords
electrode
plasma processing
processing apparatus
variable capacitor
plasma
Prior art date
Application number
TW094118229A
Other languages
English (en)
Chinese (zh)
Other versions
TWI374491B (ko
Inventor
Taichi Hirano
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200620454A publication Critical patent/TW200620454A/zh
Application granted granted Critical
Publication of TWI374491B publication Critical patent/TWI374491B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
TW094118229A 2004-06-02 2005-06-02 Plasma processing apparatus and impedance control method TW200620454A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004165074 2004-06-02

Publications (2)

Publication Number Publication Date
TW200620454A true TW200620454A (en) 2006-06-16
TWI374491B TWI374491B (ko) 2012-10-11

Family

ID=35577442

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094118229A TW200620454A (en) 2004-06-02 2005-06-02 Plasma processing apparatus and impedance control method

Country Status (3)

Country Link
KR (1) KR100710923B1 (ko)
CN (1) CN100435273C (ko)
TW (1) TW200620454A (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI549182B (zh) * 2013-02-12 2016-09-11 Hitachi High Tech Corp Plasma processing device
TWI570769B (ko) * 2014-10-22 2017-02-11
US10418254B2 (en) 2017-08-23 2019-09-17 Hitachi High-Technologies Corporation Etching method and etching apparatus
US11217454B2 (en) 2019-04-22 2022-01-04 Hitachi High-Tech Corporation Plasma processing method and etching apparatus
US11875978B2 (en) 2020-06-16 2024-01-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4882824B2 (ja) 2007-03-27 2012-02-22 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
CN100595886C (zh) * 2008-09-26 2010-03-24 中国科学院微电子研究所 一种消除反应离子刻蚀自偏压的方法及系统
JP5666888B2 (ja) * 2010-11-25 2015-02-12 東京エレクトロン株式会社 プラズマ処理装置及び処理システム
GB201609119D0 (en) * 2016-05-24 2016-07-06 Spts Technologies Ltd A method of cleaning a plasma processing module
KR101813497B1 (ko) 2016-06-24 2018-01-02 (주)제이하라 플라즈마 발생장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874704A (en) * 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
KR100234912B1 (ko) * 1997-01-23 1999-12-15 윤종용 직류 전압을 제어하기 위한 hdp cvd 설비의 세정 장치 및 방법
KR20000027767A (ko) * 1998-10-29 2000-05-15 김영환 플라즈마 장치
US6349670B1 (en) * 1998-11-30 2002-02-26 Alps Electric Co., Ltd. Plasma treatment equipment
JP4230029B2 (ja) * 1998-12-02 2009-02-25 東京エレクトロン株式会社 プラズマ処理装置およびエッチング方法
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
JP4514911B2 (ja) * 2000-07-19 2010-07-28 東京エレクトロン株式会社 プラズマ処理装置
KR100396214B1 (ko) * 2001-06-19 2003-09-02 주성엔지니어링(주) 초단파 병렬 공명 안테나를 구비하는 플라즈마 공정장치
JP4370789B2 (ja) 2002-07-12 2009-11-25 東京エレクトロン株式会社 プラズマ処理装置及び可変インピーダンス手段の校正方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI549182B (zh) * 2013-02-12 2016-09-11 Hitachi High Tech Corp Plasma processing device
US10332760B2 (en) 2013-02-12 2019-06-25 Hitachi High-Technologies Corporation Method for controlling plasma processing apparatus
TWI570769B (ko) * 2014-10-22 2017-02-11
US10418254B2 (en) 2017-08-23 2019-09-17 Hitachi High-Technologies Corporation Etching method and etching apparatus
US11217454B2 (en) 2019-04-22 2022-01-04 Hitachi High-Tech Corporation Plasma processing method and etching apparatus
US11875978B2 (en) 2020-06-16 2024-01-16 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
TWI374491B (ko) 2012-10-11
KR100710923B1 (ko) 2007-04-23
CN1705079A (zh) 2005-12-07
KR20060046381A (ko) 2006-05-17
CN100435273C (zh) 2008-11-19

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees