TW200618360A - Semiconductor luminescent device and manufacturing method therefor - Google Patents

Semiconductor luminescent device and manufacturing method therefor

Info

Publication number
TW200618360A
TW200618360A TW094135822A TW94135822A TW200618360A TW 200618360 A TW200618360 A TW 200618360A TW 094135822 A TW094135822 A TW 094135822A TW 94135822 A TW94135822 A TW 94135822A TW 200618360 A TW200618360 A TW 200618360A
Authority
TW
Taiwan
Prior art keywords
manufacturing
luminescent device
method therefor
semiconductor luminescent
electrode
Prior art date
Application number
TW094135822A
Other languages
English (en)
Other versions
TWI279933B (en
Inventor
Yoshiki Tada
Tetsuji Moku
Arei Niwa
Yasuhiro Kamii
Junji Sato
Takasi Kato
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of TW200618360A publication Critical patent/TW200618360A/zh
Application granted granted Critical
Publication of TWI279933B publication Critical patent/TWI279933B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094135822A 2004-10-18 2005-10-14 Semiconductor luminescent device and manufacturing method therefor TWI279933B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004302665A JP4301136B2 (ja) 2004-10-18 2004-10-18 半導体発光素子およびその製造方法

Publications (2)

Publication Number Publication Date
TW200618360A true TW200618360A (en) 2006-06-01
TWI279933B TWI279933B (en) 2007-04-21

Family

ID=36179789

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094135822A TWI279933B (en) 2004-10-18 2005-10-14 Semiconductor luminescent device and manufacturing method therefor

Country Status (4)

Country Link
US (1) US7202510B2 (zh)
JP (1) JP4301136B2 (zh)
CN (1) CN100428509C (zh)
TW (1) TWI279933B (zh)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100845037B1 (ko) * 2006-08-02 2008-07-09 포항공과대학교 산학협력단 오믹 전극 및 그 형성 방법, 이를 구비하는 반도체 발광소자
JP2008171997A (ja) * 2007-01-11 2008-07-24 Rohm Co Ltd ＧａＮ系半導体発光素子
JP2008235729A (ja) * 2007-03-23 2008-10-02 Fupo Electronics Corp Ｌｅｄエピウエハに用いるランドパッドの製造工程及び構造
JP2008244161A (ja) * 2007-03-27 2008-10-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子の電極形成方法
US8080480B2 (en) * 2007-09-28 2011-12-20 Samsung Led Co., Ltd. Method of forming fine patterns and manufacturing semiconductor light emitting device using the same
JP4905514B2 (ja) * 2009-07-15 2012-03-28 住友電気工業株式会社 窒化物系半導体発光素子
JP4945686B2 (ja) * 2010-01-27 2012-06-06 三洋電機株式会社 光電変換装置
JP5036840B2 (ja) * 2010-03-25 2012-09-26 株式会社東芝 発光素子
TWI484660B (zh) * 2011-08-31 2015-05-11 Kabushiki Kaisya Toshiba 提昇發光二極體內光萃取率的粗化製程之金微遮罩
US8759127B2 (en) * 2011-08-31 2014-06-24 Toshiba Techno Center Inc. Gold micromask for roughening to promote light extraction in an LED
US20130175516A1 (en) * 2011-09-02 2013-07-11 The Procter & Gamble Company Light emitting apparatus
EP2881982B1 (en) 2013-12-05 2019-09-04 IMEC vzw Method for fabricating cmos compatible contact layers in semiconductor devices
JP2017062057A (ja) * 2015-09-24 2017-03-30 株式会社Ｔｒｙセル 食材処理装置及び食材処理ユニット

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2803742B2 (ja) 1993-04-28 1998-09-24 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
JP3620926B2 (ja) * 1995-06-16 2005-02-16 豊田合成株式会社 ｐ伝導形３族窒化物半導体の電極及び電極形成方法及び素子
US6800876B2 (en) * 2001-01-16 2004-10-05 Cree, Inc. Group III nitride LED with undoped cladding layer (5000.137)
JP2003258304A (ja) * 2002-02-28 2003-09-12 Hitachi Cable Ltd 半導体発光素子及びその製造方法
TW573372B (en) * 2002-11-06 2004-01-21 Super Nova Optoelectronics Cor GaN-based III-V group compound semiconductor light-emitting diode and the manufacturing method thereof
JP2004207769A (ja) * 2004-04-16 2004-07-22 Showa Denko Kk 透光性電極およびその作製方法

Also Published As

Publication number Publication date
US7202510B2 (en) 2007-04-10
JP2006114813A (ja) 2006-04-27
JP4301136B2 (ja) 2009-07-22
CN100428509C (zh) 2008-10-22
CN1763984A (zh) 2006-04-26
US20060081834A1 (en) 2006-04-20
TWI279933B (en) 2007-04-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees