TW200611991A - Solution vaporizing CVD apparatus - Google Patents

Solution vaporizing CVD apparatus

Info

Publication number
TW200611991A
TW200611991A TW094106953A TW94106953A TW200611991A TW 200611991 A TW200611991 A TW 200611991A TW 094106953 A TW094106953 A TW 094106953A TW 94106953 A TW94106953 A TW 94106953A TW 200611991 A TW200611991 A TW 200611991A
Authority
TW
Taiwan
Prior art keywords
tube
kinds
vaporizing
orifice tube
material solutions
Prior art date
Application number
TW094106953A
Other languages
English (en)
Other versions
TWI265978B (en
Inventor
Hisayoshi Yamoto
Shinichi Koshimae
Original Assignee
Youtec Co Ltd
Hisayoshi Yamoto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Youtec Co Ltd, Hisayoshi Yamoto filed Critical Youtec Co Ltd
Publication of TW200611991A publication Critical patent/TW200611991A/zh
Application granted granted Critical
Publication of TWI265978B publication Critical patent/TWI265978B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
TW094106953A 2004-10-01 2005-03-08 Solution-vaporization type CVD apparatus TWI265978B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004290087A JP3896594B2 (ja) 2004-10-01 2004-10-01 Ｃｖｄ用気化器、溶液気化式ｃｖｄ装置及びｃｖｄ用気化方法

Publications (2)

Publication Number Publication Date
TW200611991A true TW200611991A (en) 2006-04-16
TWI265978B TWI265978B (en) 2006-11-11

Family

ID=35521158

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094106953A TWI265978B (en) 2004-10-01 2005-03-08 Solution-vaporization type CVD apparatus

Country Status (6)

Country Link
US (1) US20060070575A1 (zh)
EP (1) EP1643003A1 (zh)
JP (1) JP3896594B2 (zh)
KR (1) KR100654400B1 (zh)
CN (1) CN1754982A (zh)
TW (1) TWI265978B (zh)

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FR2900070B1 (fr) * 2006-04-19 2008-07-11 Kemstream Soc Par Actions Simp Dispositif d'introduction ou d'injection ou de pulverisation d'un melange de gaz vecteur et de composes liquides et procede de mise en oeuvre dudit dispositif.
JP2007308774A (ja) * 2006-05-19 2007-11-29 Utec:Kk 薄膜形成装置、及び薄膜形成方法
FR2900071B1 (fr) * 2006-08-24 2009-02-13 Kemstream Soc Par Actions Simp Dispositif d'introduction ou d'injection ou de pulverisation d'un melange de gaz vecteur et de composes liquides et procede de mise en oeuvre dudit dispositif
JP5427344B2 (ja) 2007-05-23 2014-02-26 株式会社渡辺商行 気化装置、及び、気化装置を備えた成膜装置
JP2008294190A (ja) * 2007-05-24 2008-12-04 Hitachi Kokusai Electric Inc 基板処理装置
JP2009239082A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
JP5422177B2 (ja) * 2008-11-11 2014-02-19 ルネサスエレクトロニクス株式会社 成膜装置の再稼働方法
US9353625B2 (en) * 2009-01-13 2016-05-31 General Electric Technology Gmbh Device for cleaning oxidized or corroded components in the presence of a halogenous gas mixture
FI20115236A0 (fi) * 2011-03-09 2011-03-09 Beneq Oy Pinnoitusmenetelmä, laite ja käyttö
JP5720406B2 (ja) * 2011-05-10 2015-05-20 東京エレクトロン株式会社 ガス供給装置、熱処理装置、ガス供給方法及び熱処理方法
KR101678100B1 (ko) * 2015-02-12 2016-11-22 (주)티티에스 원료 공급기 및 기판 처리 장치
JP6578125B2 (ja) * 2015-04-30 2019-09-18 株式会社フジキン 気化供給装置
CN113692641A (zh) 2019-04-17 2021-11-23 株式会社威尔康 气化器和其制造方法
CN113058342B (zh) * 2021-04-13 2022-10-28 西安航空制动科技有限公司 一种便于在线实时清理的cvd炉过滤装置

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US5362328A (en) * 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
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Also Published As

Publication number Publication date
US20060070575A1 (en) 2006-04-06
TWI265978B (en) 2006-11-11
JP3896594B2 (ja) 2007-03-22
CN1754982A (zh) 2006-04-05
JP2006108230A (ja) 2006-04-20
KR20060043838A (ko) 2006-05-15
EP1643003A1 (en) 2006-04-05
KR100654400B1 (ko) 2006-12-06

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees