TW200604723A - Photoresist composition - Google Patents

Photoresist composition

Info

Publication number
TW200604723A
TW200604723A TW094121420A TW94121420A TW200604723A TW 200604723 A TW200604723 A TW 200604723A TW 094121420 A TW094121420 A TW 094121420A TW 94121420 A TW94121420 A TW 94121420A TW 200604723 A TW200604723 A TW 200604723A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
triemthyl
tmpmb
penthanediolmonoisobutylate
pgmea
Prior art date
Application number
TW094121420A
Other languages
English (en)
Other versions
TWI396040B (zh
Inventor
Hoon Kang
Seung-Uk Lee
Woo-Sik Jun
Dae-Youn Park
Ju-Hyuk Kim
Byung-Uk Kim
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of TW200604723A publication Critical patent/TW200604723A/zh
Application granted granted Critical
Publication of TWI396040B publication Critical patent/TWI396040B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
TW094121420A 2004-07-05 2005-06-27 抗光蝕組成物 TWI396040B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040052124A KR101042667B1 (ko) 2004-07-05 2004-07-05 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
TW200604723A true TW200604723A (en) 2006-02-01
TWI396040B TWI396040B (zh) 2013-05-11

Family

ID=35541753

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121420A TWI396040B (zh) 2004-07-05 2005-06-27 抗光蝕組成物

Country Status (5)

Country Link
US (1) US7195854B2 (zh)
JP (1) JP4594808B2 (zh)
KR (1) KR101042667B1 (zh)
CN (1) CN1721989B (zh)
TW (1) TWI396040B (zh)

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* Cited by examiner, † Cited by third party
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KR20060090520A (ko) * 2005-02-07 2006-08-11 삼성전자주식회사 감광성 수지 및 상기 감광성 수지로 이루어진 패턴을포함하는 박막 표시판 및 그 제조 방법
JPWO2006107056A1 (ja) * 2005-03-30 2008-09-25 日本ゼオン株式会社 パターン形成方法
JP2007271941A (ja) * 2006-03-31 2007-10-18 Nippon Zeon Co Ltd レジスト膜の形成方法及び感光性樹脂組成物
US20080102643A1 (en) * 2006-10-31 2008-05-01 United Microelectronics Corp. Patterning method
JP4403174B2 (ja) * 2006-12-25 2010-01-20 Ａｚエレクトロニックマテリアルズ株式会社 パターン形成方法およびそれに用いる感光性樹脂組成物
KR101482652B1 (ko) * 2007-06-07 2015-01-16 주식회사 동진쎄미켐 유기반도체 보호막 조성물
US20100151118A1 (en) * 2008-12-17 2010-06-17 Eastman Chemical Company Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
JP5329999B2 (ja) * 2009-01-29 2013-10-30 ＡｚエレクトロニックマテリアルズＩｐ株式会社 パターン形成方法
KR102058651B1 (ko) 2013-02-27 2019-12-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 그를 이용한 표시 장치의 제조 방법
KR101571711B1 (ko) * 2015-02-06 2015-11-25 동우 화인켐 주식회사 신너 조성물
KR102460134B1 (ko) * 2015-09-07 2022-10-31 주식회사 동진쎄미켐 구리막용 포토레지스트 조성물
CN109491204B (zh) * 2018-10-26 2022-10-25 徐州瑞义新材料有限公司 一种高耐热性光刻胶组合物及其制备方法

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US3666473A (en) 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
JPS5280022A (en) 1975-12-26 1977-07-05 Fuji Photo Film Co Ltd Light solubilizable composition
US4550069A (en) 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
EP0226741B1 (de) * 1985-10-25 1989-08-02 Hoechst Celanese Corporation Verfahren zur Herstellung eines positiv arbeitenden Photoresists
US5004672A (en) * 1989-07-10 1991-04-02 Shipley Company Inc. Electrophoretic method for applying photoresist to three dimensional circuit board substrate
US5314789A (en) * 1991-10-01 1994-05-24 Shipley Company Inc. Method of forming a relief image comprising amphoteric compositions
US6323275B2 (en) * 1992-05-28 2001-11-27 Toagosei Co., Ltd. Cyanoacrylate adhesive composition
JP3317576B2 (ja) * 1994-05-12 2002-08-26 富士写真フイルム株式会社 ポジ型感光性樹脂組成物
JPH08110634A (ja) * 1994-10-07 1996-04-30 Fuji Photo Film Co Ltd フォトレジスト塗布液
TW421731B (en) * 1994-10-24 2001-02-11 Clariant Finance Bvi Ltd Positive photoresist composition, photo-sensitive element comprising it, methods of using it, and photosensitizer therein
WO1996023846A1 (fr) * 1995-01-30 1996-08-08 Tomoyuki Fukuda Procede de solidification d'huile liquide et agent de solidification utilise
JPH1184644A (ja) * 1997-09-03 1999-03-26 Fuji Film Oorin Kk ポジ型レジスト組成物及びこれを用いたパターンの形成方法
JP3640290B2 (ja) 1998-10-02 2005-04-20 東京応化工業株式会社 ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材
AU2001275841A1 (en) * 2000-06-30 2002-01-14 E.I. Du Pont De Nemours And Company Process for thick film circuit patterning
KR100363273B1 (ko) * 2000-07-29 2002-12-05 주식회사 동진쎄미켐 액정표시장치 회로용 포토레지스트 조성물
JP2002267833A (ja) * 2001-03-14 2002-09-18 Toray Ind Inc 液晶ディスプレイ用カラーフィルタの製造方法。
KR100945435B1 (ko) * 2001-08-20 2010-03-05 닛산 가가쿠 고교 가부시키 가이샤 리소그래피용 반사방지막 형성 조성물
JP3918542B2 (ja) * 2001-12-11 2007-05-23 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR100783603B1 (ko) * 2002-01-05 2007-12-07 삼성전자주식회사 포토레지스트 조성물 및 이를 사용한 패턴의 형성방법
TWI283335B (en) * 2002-08-20 2007-07-01 Kyowa Yuka Kk A composition with photo-sensibility of visible light
JP4369103B2 (ja) * 2002-09-30 2009-11-18 太陽インキ製造株式会社 感光性導電ペースト及びそれを用いて電極形成したプラズマディスプレイパネル
JP4351432B2 (ja) * 2002-10-29 2009-10-28 三井化学株式会社 感光性樹脂組成物、ドライフィルム及びそれを用いた加工品
JP3787323B2 (ja) 2002-11-14 2006-06-21 東京応化工業株式会社 ポジ型ホトレジスト塗布液及びそれを用いた表示素子用基材
WO2004047166A2 (en) * 2002-11-15 2004-06-03 E.I. Du Pont De Nemours And Company Process for using protective layers in the fabrication of electronic devices
US20040170925A1 (en) * 2002-12-06 2004-09-02 Roach David Herbert Positive imageable thick film compositions

Also Published As

Publication number Publication date
CN1721989B (zh) 2010-05-05
JP4594808B2 (ja) 2010-12-08
US20060008728A1 (en) 2006-01-12
JP2006023734A (ja) 2006-01-26
TWI396040B (zh) 2013-05-11
KR20060003295A (ko) 2006-01-10
KR101042667B1 (ko) 2011-06-20
CN1721989A (zh) 2006-01-18
US7195854B2 (en) 2007-03-27

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