TW200540950A - Method for forming self-aligned contact of semiconductor device - Google Patents

Method for forming self-aligned contact of semiconductor device Download PDF

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Publication number
TW200540950A
TW200540950A TW093115632A TW93115632A TW200540950A TW 200540950 A TW200540950 A TW 200540950A TW 093115632 A TW093115632 A TW 093115632A TW 93115632 A TW93115632 A TW 93115632A TW 200540950 A TW200540950 A TW 200540950A
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Taiwan
Prior art keywords
contact
stage
forming
insulating layer
semiconductor device
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TW093115632A
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English (en)
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TWI242797B (en
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Tse-Yao Huang
Kuo-Chien Wu
Yi-Nan Chen
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Nanya Technology Corp
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Priority to TW093115632A priority Critical patent/TWI242797B/zh
Priority to US10/940,707 priority patent/US7115491B2/en
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Publication of TWI242797B publication Critical patent/TWI242797B/zh
Publication of TW200540950A publication Critical patent/TW200540950A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H01L21/823425—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Description

200540950 玖、發明說明 【發明所屬之技術領域】 本發明係關於-種半導體裝置之製造方法，特別關於一種利 用自動對準觸點（self-aligned contact ; SAC )技術來製造記憶體 單元陣列的方法。 【先前技術】 在半導體製程中，自動對準觸點（Self_aUgned⑺加似；s Ac ) 技術的一種應用範例，係用於在記憶體單元陣列的二相鄰字元線 (即％效電B曰體的閘極結構）之間形成一觸點，以便將電晶體之 源/汲極區域（接面區域或擴散區域）電性連接到位元線。 圖9(a)與9(b)說明習知自動對準觸點的形成方式。 首先，如圖9(a)所示，矽基板1〇〇上預先形成有電晶體之閘 極結構101，並且，利用離子佈植技術，在基板1〇〇中形成擴散 區域（接面區域）110。閘極結構1〇][一般包括一多晶石夕層 (polysilicon layer) 106及一位於多晶矽層106上方之矽化鎢層 (tungsten silicide layer*) 104。其又包括一覆蓋層（cap layer) 1〇2覆蓋於矽化鎢層104上，並且，沿著上述三層ι〇2、ι〇4、106 所形成之堆疊結構的二側壁，分別設有一間隔片（spacer ) 1〇8。 復蓋層102與間隔片108均係由氮化石夕（siHcon nitride )所製成， 其作用不僅在於防止閘極被餘刻，並可作為閘極與觸點之間的絕 緣體。 接下來，將整個記憶體單元陣列區域填滿一較厚之氧化物絕 、、彖材料’例如石朋填石夕玻璃（BPSG ; borophosphosilicate glass)， 形成一氧化物層（絕緣層）112。 然後，如圖9(b)所示，於氧化物層112上方塗佈一光阻層， 200540950 界疋一具有特定圖案之光罩114,露出欲形成觸點的區域。之後， 再進订具有高度選擇性的蝕刻，也就是對氧化物的蝕刻速率遠大 於對氮化物的蝕刻速率，向下蝕刻穿透氧化物層112，達到基板 100之接面區域11 〇，形成觸點孔i i 6。 最後，在於觸點孔116中填入金屬觸點材料，即可形成一連 接於接面區域與位元線之間的觸點。 由於上述SAC技術使用氧化物對氮化物的選擇性钮刻，在觸 點孔116形成過程中，覆蓋層1〇2與間隔片ι〇8雖然會露出，但 八餘刻速率較為緩慢。因此，此種技術的優點在於，觸點孔的寬 度可大於二相鄰閘極結構之間的寬度，且光罩ιΐ4的位置對齊不 需要非常精確。 題。=體=的:^技術會產生過㈣（―…的問 产相㈣一 °社蝕刻觸點孔時，由於欲蝕刻之氧化物層的深 ΐ，對氧化物的敍刻速率遠大於對氮化物的靖 2仁鼠化物層（覆蓋層102與間隔片108)的轉角 谷易被蝕刻的幾何形狀，又長時 /、 "· ^ 恭路於颠刻中，因此難以避免
ρ χ的务生。這將會使得閘極與觸點連通，造成字元绩-線的短路。 、w成子凡線與位TL 【發明内容】 本發明之目的在於提供一種半導體裝/ 成万忐其可適用於記憶體單元陣列之制 與間隔片之汛為^丨 ’防止氮化物覆蓋層 :片:過餘刻，避免字元線與位元線之間的短路。 成方法，其可適用於記憶體單元陣列之自㈣準觸點之形 元陣列區域中的位元線觸點 =同時形成記憶體單 ^逯&域中之支援觸點（cs)、 200540950 以及閘極觸點（CG) 為達到上述目的，本發明提供—種半導體裝置之自動對準觸 點之形成方法，包含下列步驟：在預先設置有複數個閘極結構及 擴散區域之基板上，覆蓋一薄氮化物絕緣層；沉積一含有 之第-絕緣層’並以CMP對第—絕緣層進行研磨，直到暴露出 氮化物絕緣層：飯刻穿透第_絕緣層，直到露出擴散區域，以形 成第-階段觸點孔；於第-階段觸點孔中填人導電材料，形成第 -階段觸點；沉積-含有之了咖之第二絕緣層；餘刻穿透第二 絕緣層’直到露出第一階段觸點，以形成第二階段觸點孔；及於 第二階段觸點孔中填入導電材料，形成第二階段觸點。 根據此方法’可在一半導體裝置中，利用二階段方式，形成 導電觸點。亦即，第-階段觸點與第二階段觸點可結合形成一觸 點。社弟n中’將第—絕緣層（BpsG)之深度控制在基板到 閘極結構上之氮化物層之間，使得第一絕緣層的蝕刻時間可較 有放防止過敍刻之發生’改善字元線與位元線短路問題。在 第二階段巾’則可㈣第三絕緣層（ΤΕ叫之厚度，藉以 屬觸點的深度。 此外’根據此方法’可在—半導體裝置中，同時形成記憶體 I元陣列區域中的位元線觸,點（CB)、周邊區域中之支援觸點 (CS )、以及閘極角萄點（cg ) 【實施方式】 之技術内容，特舉一較佳 為能讓貴審查委員能更瞭解本發明 實施例說明如下。 *動:===明本發明較佳實施例的半導_之 200540950 在本發明之較佳實施例中’可利用自動對準觸點技術，在記 憶體裝置製程巾’同時形成記憶體單轉舰域巾的位元線觸點 (CB ; bit Hne識Uet )、周邊區域中其他驅動電路所需之支援觸 點（CS; support Contact)、以及閘極觸點（cg;肸化 c〇nduct〇r contact ) ° 如圖1所示，圖左側由箭頭A所指示者係為記憶體單元陣列 區域，而圖右側由箭頭P所指示者係為周邊區域。 根據本發明較佳實施例，首先在石夕基板2〇〇上預先設置複數 個閘極結構2(Π，並在基板中分別形成n+與p+擴散區域（接 面區域）210與214。如同圖9⑷與：9(b)之習知技術，間極結構 201包括一多晶石夕（poly Si)層2〇6及一位於多晶石夕層篇上方 之石夕化鎢（WSix )層204。盆叉白k ^ 具又包括一虱化矽（SiN)覆蓋層202 覆蓋於耗鶴層204上，並且，沿著上述三層搬、施、鳩所 形成之堆疊結構的二側壁，分別形成有—氮化_ 間隔片 (spacer) 208 〇 然後’於整個晶圓表面上，霜签一 ^ T/7 C * XT \ 丄伋盍溥鼠化矽（SiN )絕緣層 做為氮化物絕緣層212。 ^著，參照圖2，於整個晶圓表面上，沉積—厚度足以覆蓋 所有閘1亟結構201與氮化物層之硼磷矽玻璃（BpSG ; b〇r〇Ph〇Sph〇silicateglass)，做為—第-絕緣層 22()。^後，_ 用化學機械研磨法（CMP ; ehemieal麗_—pianadzati〇n )對 第一絕緣層220進行研磨，直到氮化物絕緣層212暴露出，亦即， 使第一絕緣層頂的表面與開極結構2〇1 ±方的氮化物絕緣層 212表面齊平，如圖2所示之狀態。 接著’參照圖3,在整個晶圓上方塗佈一光阻層（未示），形 200540950 成具韦特定圖案之伞g當# 域。缺後； 路出於將要形成閘極觸點（CG)之區 二::：之 化物絕緣層212與覆蓋層，直到露出 閘極結構之矽化鎢層204，带出错 ^ 所示之狀態。 /成弟-阳段閘極觸點孔222’如圖3 照圖4,在整個晶圓上方再度塗佈-光阻層(未示)， 盘古心’疋圖案之光罩’僅露出於將要形成位元線觸點（CB) 人设萄點（CS)之區域。然後，向下餘刻第一絕緣層細，分 別露出基板200之擴散區域21〇與214，形成第一階段位元線觸 點孔224與第—階段支援觸點孔咖，如圖4所示之狀態。此步 驟係利用選擇性⑽j，且較佳使用濕式㈣，其對氧化物的钱刻 速:遠大於對氮化物㈣刻速率。相較於習知技術，由於此步驟 對弟-絕緣層（BPS G ) 22G之_距離較短，因此㈣時間較短， 可有效減少氮化物層（覆蓋層2〇2與間隔片2〇8)之轉角處的姓 刻損失1言之’可防止過_的產生’避免產生位㈣與字元 線之間的短路。 接著，參照圖5,同時於第一階段閘極觸點孔222、第一階段 位元線觸點孔224與第一階段支援觸點孔226中，填入導電材料， 然後以CMP磨平，分別形成第一階段閘極觸點222a、第一階段 位兀線觸點224A與第一階段支援觸點226A。填入導電材料的步 驟可包含欽（Ti)沈積Ti、氮化鈦（TiN)形成及鎢（w)沈積， 以形成習知之W/TiN/Ti觸點結構。 ' 接著，參照圖6,於整個晶圓表面上，覆蓋一薄氮化矽（siN) 絕緣層，做為氮化物絕緣層228。然後，於氮化物絕緣層228上 方，沉積厚度約為1500 A之四乙基矽氧烧（TE〇s ; tetraethoxysiliane)氧化物層，做為一第二絕緣層23〇。 200540950 接著，參照圖7，在整個晶圓上方度塗佈一光阻層（未示）， 形成具有特定圖案之光罩，僅露出於形成閘極觸點（cg )、位元 線觸點（CB)與支援觸點（CS)之區域。然後，向下蝕刻第二絕 緣層230與氮化物絕緣層228，分別露出第一階段閘極觸點 222A、第一階段位元線觸點224A與第一階段支援觸點226a，形 成第二階段閘極觸點孔232、第二階段位元線觸點234與第二階 段支援觸點236，如圖7所示之狀態。 最後，參照圖8，同時於第二階段閘極觸點孔232、第二階段 位元線觸點孔234與第二階段支援觸點孔236中，填入導電材料， 然後以CMP磨平，分別形成第二階段閘極觸點232A、第二階段 位元線觸點234A與第二階段支援觸點236A。填入導電材料的步 驟可包含鈦（Ti)沈積Ti、氮化鈦（TiN )形成及鎢（W )沈積， 以形成習知之W/TiN/Ti觸點結構。 如圖8所示’根據本發明上述自動對準觸點之形成方法，可 在一半導體裝置中，利用二階段方式，形成金屬觸點。亦即，第 一階段閘極觸點222A與第二階段閘極觸點232八結合形成一閘極 觸點（CG)，第一階段位元線觸點224A與第二階段位元線觸點 234A結合形成一位元線觸點（CB)，第一階段支援觸點226a與 第二階段支援觸點236A結合形成一支援觸點（CS )。 根據本發明之二階段式自動對準觸點之形成方法，在第一階 段中，利用CMP將第一絕緣層（BPSG) 22〇之深度控制在基板 200到閘極結構201上之氮化物層之間，使得第一絕緣層22〇的 蝕刻距離較短，故蝕刻時間較短，可有效防止過蝕刻之發生，改 善子το線與位元線短路問題。在第二階段中，則可控制第二絕緣 層（TEOS) 230之厚度，藉以控制M〇金屬互連層（M()咖⑻ 11 200540950 interconnect)的深度。 上述實施例僅為例示性說明本發明之原理及其功效，而非用 於限制本發明之範圍。任何熟於此項技藝之人士均可在不違背本 發明之技術原理及精神下，對實施例作修改與變化。本㈣之 利保護範圍應如後述之申請專利範圍所述。 【圖式簡單說明】 圖1至8係為本發明半導體裝置之自 說明截面圖；及 +丰觸點技術之步驟 圖9(a)至9(b)係為習知自動對準觸點 圖。 文術之步驟說明截面 (元件符號說明） 100 ·基板 ιοί :閘極結構 1 〇2 :覆蓋層 104 :矽化鎢層 106 :多晶矽層 1〇8 :間隔片 11〇 :源/没極區域（接面區域） _ 112 :氧化物層 114 :光罩 116 :觸點孔 200 :基板 ， 201 :閘極結構 2〇2 :覆蓋層 204 :矽化鎢層 12 200540950 206 :多晶矽層 208 :間隔片 210 :擴散區域 212 :氮化物絕緣層 214 :擴散區域 220 :第一絕緣層 、 222 :第一階段閘極觸點孔 222A :第一階段閘極觸點 224 ··第一階段位元線觸點孔 鲁 224A :第一階段位元線觸點 226:第一階段支援觸點孔 226A :第一階段支援觸點 228 :氮化物絕緣層 230 :第二絕緣層 232 :第二階段閘極觸點孔 232A :第二階段閘極觸點 234 :第二階段位元線觸點孔 修 234A:第二階段位元線觸點 236 ··第二階段支援觸點孔 236A :第二階段支援觸點 * 13

Claims (1)

  1. 200540950 拾、申請專利範圍 1 · 一種半導體裝置之自動對準觸點之形成方法， 含下列步 驟： 及至少一鄰近 (a)提供一半導體基板，其具有至少一閘極結 於該閘極結構之擴散區域； 該擴散區域之上 (b)形成一第一絕緣層，該第一絕緣層至少覆蓋該閘極結構及 r私IS试夕 I* · (C)研磨該第一絕緣層，露出該閘極結構； (d) 形成一第一階段觸點孔，穿透該第一絕緣層，露出該擴散 區域之至少一部分； (e) 於該第一階段觸點孔形成一第一階段觸點； ⑴形成一第二絕緣層，該第二絕緣層至少覆蓋該閘極結構及 該第一階段觸點之上； (g) 形成一第二階段觸點孔，穿透該第二絕緣層，露出該第一 階段觸點之至少一部分；及 (h) 於該第二階段觸點孔形成一第二階段觸點。
    2·如申請專利範圍第丨項之半導體裝置之自動對準觸點之 形成方法，其又包含，在步驟（b)之前，沿著該閘極結構及該接面 區域輪廓形成一薄氮化物絕緣層。 / 3·如申請專利範圍第1項之半導體裝置之自動對準觸點之 形成方法，其又包含，在步驟⑴之前，形成一薄氮化物絕緣層， 。亥薄氮化物絕緣層至少覆蓋該閘極結構及該第一階段觸點之上。 14 200540950 … '如申請專利範圍帛1工員之半導體裝置之自動對準觸點之 I成方法’其中’㈣_絕緣層係由寧㈣玻璃（刪g )製成。 少5·如申明專利乾圍第1項之半導體裝置之自動對準觸點之 幵y成方法，其中，该第二絕緣層係由四乙基矽氧烷（TE〇s)製成。 ,6·如申凊專利範圍第1項之半導體裝置之自動對準觸點之 形成方法，其中，該步驟⑷係利用濕式蝕刻達成。 ,7·如申嗬專利範圍第2項之半導體裝置之自動對準觸點之 形成方法，其中，該氮化物絕緣層係由氮化矽（SiN )製成。 ,8·如申請專利範圍第3項之半導體裝置之自動對準觸點之 圯成方法，其中，該氮化物絕緣層係由氮化矽（SiN)製成。 9. 一種半導體裝置之自動對準觸點之形成方法，包含下列步 驟： U)提供一半導體基板，其具有複數個閘極結構及鄰近於該閘 極結構之擴散區域，該等閘極結構包括有一導電層； (b)形成一第一絕緣層，該第一絕緣層至少覆蓋該等閘極結構 及該擴散區域之上； (幻研磨該第一絕緣層，露出該等閘極結構； (句於至少一閘極結構上，形成一第一類梨之第一階段觸點 ，露出該至少一閘極結構之該導電層的至少/部分； (e)形成一第二類型之第一階段觸點孔，穿透該第一絕緣層， 15 200540950 路出该擴散區域之至少一分· ⑴同時於該第—類型之第—階段觸點孔與該第 一階段觸點孔分別形成-第-類型之第-階段觸點與一第二 之第一階段觸點； 弟一類型 ⑻形成-第二絕緣層’該第二絕緣層至少覆蓋該等_ 構、該第一類型之第一階段觸 上· ”、、/、°亥弟一類型之第—階段觸點之 ⑻同時形成—第一類型之第二階段觸點孔與一第二類型之 第二階段觸點孔，穿透該第二絕緣層，分別露出該第型 一階段觸點之至少一部分盥呤馀把… ^ Ρ刀與4第二類型之第一階段觸點之至少一 部分；及 ⑴同時於該第一類型之笙 颊孓之第一階段觸點孔與該第二類型之笛 一'階段觸點孔分別形成一第_ JT , ^ ^弟類型之第二階段觸點與一第_ __ 之第二階段觸點。 乐一類型 10 ·如申晴專利範圍第9頊之末道妙驻 m本““ 項之體裝置之自動對準觸點之 形成方法，其又包含，為舟_^ 隹/驟（1))之别，沿著該等閘極結構及該接 面區域輪廓形成一薄氮化物絕緣層。 及4接 11·如申睛專利範圍第 不7貝您牛導體裝置之自動對準觸 形成方法，其又包含，在牛 ^ 干啊.點之 —尸 V驟之刖，形成一薄氮化物絕緣声， 該溥氮化物絕緣層至少覆芸兮# 曰 段觸點與該第二類型之第—階段觸點之上。 弟匕 12.如申請專利範圍第9項之半導體裝置之自動對準觸點之 16 200540950 形成方法，其中，該第_ 、、巴、、彖層係由硼磷矽玻璃（BPSG)製成。
    項之半導體裝置之自動對準觸點之 r係由四乙基矽氧烷（TE〇s)製成。
    >成方法’/、中，該步驟⑷係利用濕式㈣達成。 15. 如申睛專利範圍第10項之半導體裝置之自動對準觸點春 之形成方法，其中，該氮化物絕緣層係由氮化矽（siN)製成。 16. 如申請專利範圍第11項之半導體裝置之自動對準觸點 之形成方法’其中，該氮化物絕緣層係由氮化矽（SiN )製成。 17
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