TW200520059A - Method of epitaxial growth and substrate for epitaxial growth - Google Patents

Method of epitaxial growth and substrate for epitaxial growth

Info

Publication number
TW200520059A
TW200520059A TW093127301A TW93127301A TW200520059A TW 200520059 A TW200520059 A TW 200520059A TW 093127301 A TW093127301 A TW 093127301A TW 93127301 A TW93127301 A TW 93127301A TW 200520059 A TW200520059 A TW 200520059A
Authority
TW
Taiwan
Prior art keywords
substrate
epitaxial growth
semiconductor
compound semiconductor
semiconductor layer
Prior art date
Application number
TW093127301A
Other languages
English (en)
Chinese (zh)
Inventor
Ryuichi Hirano
Masashi Nakamura
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of TW200520059A publication Critical patent/TW200520059A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093127301A 2003-09-19 2004-09-09 Method of epitaxial growth and substrate for epitaxial growth TW200520059A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003327220A JP2007019048A (ja) 2003-09-19 2003-09-19 エピタキシャル成長方法及びエピタキシャル成長用基板

Publications (1)

Publication Number Publication Date
TW200520059A true TW200520059A (en) 2005-06-16

Family

ID=34372864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093127301A TW200520059A (en) 2003-09-19 2004-09-09 Method of epitaxial growth and substrate for epitaxial growth

Country Status (3)

Country Link
JP (1) JP2007019048A (ja)
TW (1) TW200520059A (ja)
WO (1) WO2005029560A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2750331B2 (ja) * 1992-04-23 1998-05-13 株式会社ジャパンエナジー エピタキシャル成長用基板およびエピタキシャル成長方法
JP2743348B2 (ja) * 1993-12-27 1998-04-22 関西日本電気株式会社 エピタキシャル成長方法
JP3129112B2 (ja) * 1994-09-08 2001-01-29 住友電気工業株式会社 化合物半導体エピタキシャル成長方法とそのためのＩｎＰ基板

Also Published As

Publication number Publication date
WO2005029560A1 (ja) 2005-03-31
JP2007019048A (ja) 2007-01-25

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