TW200636823A - Method of forming indium gallium nitride (InGaN) layer and semiconductor device - Google Patents

Method of forming indium gallium nitride (InGaN) layer and semiconductor device

Info

Publication number
TW200636823A
TW200636823A TW095105798A TW95105798A TW200636823A TW 200636823 A TW200636823 A TW 200636823A TW 095105798 A TW095105798 A TW 095105798A TW 95105798 A TW95105798 A TW 95105798A TW 200636823 A TW200636823 A TW 200636823A
Authority
TW
Taiwan
Prior art keywords
ingan
layer
semiconductor device
gallium nitride
indium gallium
Prior art date
Application number
TW095105798A
Other languages
Chinese (zh)
Inventor
Hiroshi Fujioka
Atsushi Kobayashi
Original Assignee
Kanagawa Kagaku Gijutsu Akad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanagawa Kagaku Gijutsu Akad filed Critical Kanagawa Kagaku Gijutsu Akad
Publication of TW200636823A publication Critical patent/TW200636823A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/024—Group 12/16 materials
    • H01L21/02403—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

In a nitride semiconductor device (10), an InGaN layer (12) is formed on a planarized surface of a ZnO substrate (11). The InGaN layer (12) is formed by using a PLD apparatus. Namely, an InGaN film is formed on the ZnO substrate (11) by irradiating an InGa metal with an excimer laser in a nitrogen atmosphere. The temperature is set at not more than 420 DEG C during the InGaN film formation, so that no phase separation occurs between InN and GaN, thereby producing an InGaN film with good crystallinity.
TW095105798A 2005-02-21 2006-02-21 Method of forming indium gallium nitride (InGaN) layer and semiconductor device TW200636823A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005044391 2005-02-21

Publications (1)

Publication Number Publication Date
TW200636823A true TW200636823A (en) 2006-10-16

Family

ID=36916642

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095105798A TW200636823A (en) 2005-02-21 2006-02-21 Method of forming indium gallium nitride (InGaN) layer and semiconductor device

Country Status (3)

Country Link
JP (1) JPWO2006088261A1 (en)
TW (1) TW200636823A (en)
WO (1) WO2006088261A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613705A (en) * 2020-04-17 2020-09-01 南京航空航天大学 Low-dimensional high-brightness green light emission InGaN-based heterojunction diode and preparation method thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008266113A (en) * 2006-08-28 2008-11-06 Kanagawa Acad Of Sci & Technol Group iii-v nitride layer and method for producing the same
JP5490368B2 (en) * 2007-03-26 2014-05-14 公益財団法人神奈川科学技術アカデミー Method for forming epitaxial thin film and method for manufacturing semiconductor substrate
JP2012216736A (en) * 2011-04-01 2012-11-08 Showa Denko Kk Manufacturing method of semiconductor element
JP2012216734A (en) * 2011-04-01 2012-11-08 Showa Denko Kk Manufacturing method of semiconductor element
JP2012216735A (en) * 2011-04-01 2012-11-08 Showa Denko Kk Manufacturing method of semiconductor element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3888036B2 (en) * 1995-11-24 2007-02-28 日亜化学工業株式会社 Method for growing n-type nitride semiconductor
JP3139445B2 (en) * 1997-03-13 2001-02-26 日本電気株式会社 GaN-based semiconductor growth method and GaN-based semiconductor film
JP3671215B2 (en) * 2001-12-25 2005-07-13 独立行政法人情報通信研究機構 Lamination method of indium nitride on sapphire substrate
AU2003258919A1 (en) * 2002-06-26 2004-01-19 Ammono Sp.Zo.O. Nitride semiconductor laser device and a method for improving its performance
CN1823400A (en) * 2003-07-15 2006-08-23 财团法人神奈川科学技术研究院 Nitride semiconductor element and method for manufacturing thereof
JP2005303250A (en) * 2004-03-18 2005-10-27 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP5379973B2 (en) * 2004-05-10 2013-12-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic vapor phase epitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613705A (en) * 2020-04-17 2020-09-01 南京航空航天大学 Low-dimensional high-brightness green light emission InGaN-based heterojunction diode and preparation method thereof

Also Published As

Publication number Publication date
WO2006088261A1 (en) 2006-08-24
JPWO2006088261A1 (en) 2008-07-17

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