TW200518320A - Magnetic memory cell and magnetic memory device and the manufacturing method of the same - Google Patents

Magnetic memory cell and magnetic memory device and the manufacturing method of the same

Info

Publication number
TW200518320A
TW200518320A TW093108295A TW93108295A TW200518320A TW 200518320 A TW200518320 A TW 200518320A TW 093108295 A TW093108295 A TW 093108295A TW 93108295 A TW93108295 A TW 93108295A TW 200518320 A TW200518320 A TW 200518320A
Authority
TW
Taiwan
Prior art keywords
layer
magnetic
magnetic memory
manufacturing
write
Prior art date
Application number
TW093108295A
Other languages
English (en)
Other versions
TWI246182B (en
Inventor
Joichiro Ezaki
Keiji Koga
Yuji Kakinuma
Original Assignee
Tdk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tdk Corp filed Critical Tdk Corp
Publication of TW200518320A publication Critical patent/TW200518320A/zh
Application granted granted Critical
Publication of TWI246182B publication Critical patent/TWI246182B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
TW093108295A 2003-03-28 2004-03-26 Magnetic memory cell and magnetic memory device and the manufacturing method of the same TWI246182B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003092924A JP4729836B2 (ja) 2003-03-28 2003-03-28 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法

Publications (2)

Publication Number Publication Date
TW200518320A true TW200518320A (en) 2005-06-01
TWI246182B TWI246182B (en) 2005-12-21

Family

ID=33127344

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093108295A TWI246182B (en) 2003-03-28 2004-03-26 Magnetic memory cell and magnetic memory device and the manufacturing method of the same

Country Status (5)

Country Link
US (1) US7295460B2 (zh)
EP (1) EP1615269B1 (zh)
JP (1) JP4729836B2 (zh)
TW (1) TWI246182B (zh)
WO (1) WO2004088751A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4544396B2 (ja) * 2003-09-05 2010-09-15 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイス
US6972470B2 (en) * 2004-03-30 2005-12-06 Texas Instruments Incorporated Dual metal Schottky diode
FR2889348B1 (fr) * 2005-07-27 2008-09-12 Commissariat Energie Atomique Dispositif magnetoresistif
JP4779608B2 (ja) * 2005-11-30 2011-09-28 Ｔｄｋ株式会社 磁気メモリ
US7466585B2 (en) * 2006-04-28 2008-12-16 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic random access memory
JP5092384B2 (ja) * 2006-12-15 2012-12-05 Ｔｄｋ株式会社 磁気記憶装置、磁気記憶方法
EP2117071B1 (en) 2007-01-30 2012-08-22 Hitachi Metals, Ltd. Irreversible circuit element and its center conductor assembly
CN101801390B (zh) * 2007-09-10 2012-11-14 雅玛山酱油株式会社 针对爱泼斯坦-巴尔病毒相关疾病的药剂
US7800941B2 (en) * 2008-11-18 2010-09-21 Seagate Technology Llc Magnetic memory with magnetic tunnel junction cell sets
JP5475819B2 (ja) * 2012-03-20 2014-04-16 株式会社東芝 不揮発性記憶装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0293373A (ja) * 1988-09-29 1990-04-04 Nippon Denso Co Ltd 電流検出器
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5587943A (en) * 1995-02-13 1996-12-24 Integrated Microtransducer Electronics Corporation Nonvolatile magnetoresistive memory with fully closed flux operation
US5629922A (en) 1995-02-22 1997-05-13 Massachusetts Institute Of Technology Electron tunneling device using ferromagnetic thin films
JP3333670B2 (ja) 1995-09-22 2002-10-15 ティーディーケイ株式会社 磁性薄膜メモリ
US5861328A (en) 1996-10-07 1999-01-19 Motorola, Inc. Method of fabricating GMR devices
DE19818483A1 (de) * 1998-04-24 1999-10-28 Forschungszentrum Juelich Gmbh Matrix für einen Magneto-Random-Access Memory (MRAM)
JP2000090658A (ja) * 1998-09-09 2000-03-31 Sanyo Electric Co Ltd 磁気メモリ素子
JP3625424B2 (ja) 1999-12-10 2005-03-02 シャープ株式会社 磁気トンネル接合素子及びそれを用いた磁気メモリ
JP2001168417A (ja) 1999-12-10 2001-06-22 Sharp Corp 強磁性トンネル接合素子
JP3913971B2 (ja) * 1999-12-16 2007-05-09 株式会社東芝 磁気メモリ装置
JP3515940B2 (ja) 2000-02-17 2004-04-05 シャープ株式会社 磁気トンネル接合素子及びそれを用いた磁気メモリ
JP2001230468A (ja) 2000-02-17 2001-08-24 Sharp Corp 磁気トンネル接合素子及びそれを用いた磁気メモリ
JP2001273759A (ja) * 2000-03-27 2001-10-05 Sharp Corp 磁気メモリセルと磁気メモリ装置
JP2002289807A (ja) * 2001-03-27 2002-10-04 Toshiba Corp 磁気メモリ装置および磁気抵抗効果素子
US6404674B1 (en) * 2001-04-02 2002-06-11 Hewlett Packard Company Intellectual Property Administrator Cladded read-write conductor for a pinned-on-the-fly soft reference layer
JP2002353415A (ja) * 2001-05-23 2002-12-06 Internatl Business Mach Corp <Ibm> 記憶素子、メモリセル及び記憶回路ブロック
TW567608B (en) * 2001-11-30 2003-12-21 Toshiba Corp Magnetic memory device and method for manufacturing the same

Also Published As

Publication number Publication date
WO2004088751A1 (ja) 2004-10-14
JP4729836B2 (ja) 2011-07-20
EP1615269B1 (en) 2011-08-24
EP1615269A1 (en) 2006-01-11
TWI246182B (en) 2005-12-21
JP2004303837A (ja) 2004-10-28
US20070019462A1 (en) 2007-01-25
US7295460B2 (en) 2007-11-13
EP1615269A4 (en) 2009-07-08

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees