FR2889348B1 - Dispositif magnetoresistif - Google Patents

Dispositif magnetoresistif

Info

Publication number
FR2889348B1
FR2889348B1 FR0508001A FR0508001A FR2889348B1 FR 2889348 B1 FR2889348 B1 FR 2889348B1 FR 0508001 A FR0508001 A FR 0508001A FR 0508001 A FR0508001 A FR 0508001A FR 2889348 B1 FR2889348 B1 FR 2889348B1
Authority
FR
France
Prior art keywords
layers
elements
magnetizations
parallel
cofe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0508001A
Other languages
English (en)
Other versions
FR2889348A1 (fr
Inventor
Bernard Dieny
Virgile Javerliac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0508001A priority Critical patent/FR2889348B1/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to DE602006017379T priority patent/DE602006017379D1/de
Priority to JP2008523356A priority patent/JP5101501B2/ja
Priority to AT06777982T priority patent/ATE484058T1/de
Priority to EP06777982A priority patent/EP1911031B1/fr
Priority to US11/989,380 priority patent/US7944736B2/en
Priority to PCT/EP2006/064671 priority patent/WO2007014888A1/fr
Publication of FR2889348A1 publication Critical patent/FR2889348A1/fr
Application granted granted Critical
Publication of FR2889348B1 publication Critical patent/FR2889348B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
FR0508001A 2005-07-27 2005-07-27 Dispositif magnetoresistif Expired - Fee Related FR2889348B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0508001A FR2889348B1 (fr) 2005-07-27 2005-07-27 Dispositif magnetoresistif
JP2008523356A JP5101501B2 (ja) 2005-07-27 2006-07-26 磁気抵抗素子
AT06777982T ATE484058T1 (de) 2005-07-27 2006-07-26 Magnetoresistives bauelement
EP06777982A EP1911031B1 (fr) 2005-07-27 2006-07-26 Dispositif magnetoresistif
DE602006017379T DE602006017379D1 (de) 2005-07-27 2006-07-26 Magnetoresistives bauelement
US11/989,380 US7944736B2 (en) 2005-07-27 2006-07-26 Magnetoresistive device
PCT/EP2006/064671 WO2007014888A1 (fr) 2005-07-27 2006-07-26 Dispositif magnetoresistif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0508001A FR2889348B1 (fr) 2005-07-27 2005-07-27 Dispositif magnetoresistif

Publications (2)

Publication Number Publication Date
FR2889348A1 FR2889348A1 (fr) 2007-02-02
FR2889348B1 true FR2889348B1 (fr) 2008-09-12

Family

ID=36143308

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0508001A Expired - Fee Related FR2889348B1 (fr) 2005-07-27 2005-07-27 Dispositif magnetoresistif

Country Status (7)

Country Link
US (1) US7944736B2 (fr)
EP (1) EP1911031B1 (fr)
JP (1) JP5101501B2 (fr)
AT (1) ATE484058T1 (fr)
DE (1) DE602006017379D1 (fr)
FR (1) FR2889348B1 (fr)
WO (1) WO2007014888A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0918016D0 (en) 2009-10-14 2009-12-02 Univ Portsmouth Biosensor
US8400066B1 (en) 2010-08-01 2013-03-19 Lawrence T. Pileggi Magnetic logic circuits and systems incorporating same
US8476925B2 (en) 2010-08-01 2013-07-02 Jian-Gang (Jimmy) Zhu Magnetic switching cells and methods of making and operating same
US8422287B2 (en) * 2010-09-09 2013-04-16 Magic Technologies, Inc. Pulse field assisted spin momentum transfer MRAM design
US8830734B2 (en) * 2010-11-19 2014-09-09 Seagate Technology Llc Using a nearby cell to provide field assisted switching in a magnetic memory array
JP6763887B2 (ja) 2015-06-05 2020-09-30 アレグロ・マイクロシステムズ・エルエルシー 磁界に対する応答が改善されたスピンバルブ磁気抵抗効果素子
JP2017054936A (ja) * 2015-09-09 2017-03-16 株式会社東芝 磁気メモリ素子および磁気メモリ
JP2017143175A (ja) * 2016-02-10 2017-08-17 株式会社東芝 磁気記憶装置
US10620279B2 (en) 2017-05-19 2020-04-14 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US11022661B2 (en) 2017-05-19 2021-06-01 Allegro Microsystems, Llc Magnetoresistance element with increased operational range
US10411184B1 (en) * 2018-03-02 2019-09-10 Samsung Electronics Co., Ltd. Vertical spin orbit torque devices
US11719771B1 (en) 2022-06-02 2023-08-08 Allegro Microsystems, Llc Magnetoresistive sensor having seed layer hysteresis suppression

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3661652B2 (ja) * 2002-02-15 2005-06-15 ソニー株式会社 磁気抵抗効果素子および磁気メモリ装置
JP2003258207A (ja) * 2002-03-06 2003-09-12 Sony Corp 磁気ランダムアクセスメモリおよびその動作方法およびその製造方法
JP4729836B2 (ja) * 2003-03-28 2011-07-20 Ｔｄｋ株式会社 磁気記憶セルおよび磁気メモリデバイスならびに磁気メモリデバイスの製造方法
JP4534441B2 (ja) * 2003-07-25 2010-09-01 Ｔｄｋ株式会社 磁気記憶セル及びこれを用いた磁気メモリデバイス
JP4080982B2 (ja) * 2003-10-09 2008-04-23 株式会社東芝 磁気メモリ
US7120048B2 (en) * 2004-06-21 2006-10-10 Honeywell International Inc. Nonvolatile memory vertical ring bit and write-read structure
US7116575B1 (en) * 2005-03-23 2006-10-03 Honeywell International Inc. Architectures for CPP ring shaped (RS) devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9529060B2 (en) 2014-01-09 2016-12-27 Allegro Microsystems, Llc Magnetoresistance element with improved response to magnetic fields

Also Published As

Publication number Publication date
EP1911031B1 (fr) 2010-10-06
FR2889348A1 (fr) 2007-02-02
WO2007014888A1 (fr) 2007-02-08
DE602006017379D1 (de) 2010-11-18
JP5101501B2 (ja) 2012-12-19
EP1911031A1 (fr) 2008-04-16
US20090135526A1 (en) 2009-05-28
ATE484058T1 (de) 2010-10-15
US7944736B2 (en) 2011-05-17
JP2009503833A (ja) 2009-01-29

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Legal Events

Date Code Title Description
TQ Partial transmission of property
ST Notification of lapse

Effective date: 20130329