TW200517413A - Crosslinkable fluoroaromatic prepolymer and use thereof - Google Patents
Crosslinkable fluoroaromatic prepolymer and use thereofInfo
- Publication number
- TW200517413A TW200517413A TW093129703A TW93129703A TW200517413A TW 200517413 A TW200517413 A TW 200517413A TW 093129703 A TW093129703 A TW 093129703A TW 93129703 A TW93129703 A TW 93129703A TW 200517413 A TW200517413 A TW 200517413A
- Authority
- TW
- Taiwan
- Prior art keywords
- crosslinkable
- prepolymer
- compound
- fluoroaromatic
- group
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 abstract 4
- 125000000524 functional group Chemical group 0.000 abstract 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract 2
- 125000003118 aryl group Chemical group 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract 1
- 125000003709 fluoroalkyl group Chemical group 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
- C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
- C08G65/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
- C08G65/4012—Other compound (II) containing a ketone group, e.g. X-Ar-C(=O)-Ar-X for polyetherketones
- C08G65/4018—(I) or (II) containing halogens other than as leaving group (X)
- C08G65/4025—(I) or (II) containing fluorine other than as leaving group (X)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Paints Or Removers (AREA)
- Polyethers (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Formation Of Insulating Films (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Processes Of Treating Macromolecular Substances (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003340031A JP4501391B2 (ja) | 2003-09-30 | 2003-09-30 | 架橋性含フッ素芳香族プレポリマー及びその用途 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200517413A true TW200517413A (en) | 2005-06-01 |
TWI336715B TWI336715B (zh) | 2011-02-01 |
Family
ID=34386193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093129703A TW200517413A (en) | 2003-09-30 | 2004-09-30 | Crosslinkable fluoroaromatic prepolymer and use thereof |
Country Status (9)
Country | Link |
---|---|
US (2) | US20060173129A1 (zh) |
EP (1) | EP1669389B1 (zh) |
JP (1) | JP4501391B2 (zh) |
KR (1) | KR101026096B1 (zh) |
CN (1) | CN100519624C (zh) |
AT (1) | ATE440887T1 (zh) |
DE (1) | DE602004022839D1 (zh) |
TW (1) | TW200517413A (zh) |
WO (1) | WO2005030837A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006137327A1 (ja) | 2005-06-24 | 2006-12-28 | Asahi Glass Company, Limited | 架橋性含フッ素芳香族プレポリマー及びその用途 |
JP5109149B2 (ja) * | 2006-02-21 | 2012-12-26 | 旭硝子株式会社 | 光学樹脂材料組成物及び光学部材の製造方法 |
KR20140009592A (ko) * | 2006-03-16 | 2014-01-22 | 아사히 가라스 가부시키가이샤 | 네거티브형 감광성 함불소 방향족계 수지 조성물 |
WO2007142124A1 (ja) * | 2006-06-02 | 2007-12-13 | Asahi Glass Company, Limited | 架橋性プレポリマーならびにその製造方法および用途 |
JP5396694B2 (ja) * | 2006-06-02 | 2014-01-22 | 旭硝子株式会社 | 架橋性プレポリマーならびにその製造方法および用途 |
JP5181444B2 (ja) * | 2006-08-31 | 2013-04-10 | 旭硝子株式会社 | 架橋性含フッ素芳香族プレポリマーおよびその硬化物 |
JP5003415B2 (ja) * | 2006-11-22 | 2012-08-15 | 旭硝子株式会社 | ネガ型感光性組成物ならびにこれを用いた硬化膜およびその製造方法 |
JP2009026810A (ja) * | 2007-07-17 | 2009-02-05 | Asahi Glass Co Ltd | パターン形成方法 |
JP2009088444A (ja) * | 2007-10-03 | 2009-04-23 | Asahi Glass Co Ltd | エレクトレットおよびエレクトレットコンデンサマイクロフォン |
JP5245378B2 (ja) * | 2007-11-30 | 2013-07-24 | 旭硝子株式会社 | 架橋性プレポリマー、その製造方法および用途 |
KR101570553B1 (ko) * | 2008-06-19 | 2015-11-19 | 아사히 가라스 가부시키가이샤 | 경화성 조성물 및 그것을 사용한 경화막 |
US8492507B2 (en) | 2008-09-23 | 2013-07-23 | Nexam Chemical Ab | Acetylenic polyamide |
US8716403B2 (en) | 2008-12-10 | 2014-05-06 | Electronics And Telecommunications Research Institute | Prepolymer prepared by a condensation reaction and a polymer sheet obtained therefrom |
JP5459310B2 (ja) * | 2009-03-18 | 2014-04-02 | 旭硝子株式会社 | 光導波路およびその製造方法 |
US8513650B2 (en) * | 2009-05-29 | 2013-08-20 | Xerox Corporation | Dielectric layer for an electronic device |
JP2011021100A (ja) * | 2009-07-15 | 2011-02-03 | Nippon Soken Inc | デポジット付着防止材料および燃料噴射弁 |
CN102892800B (zh) | 2010-05-14 | 2015-05-13 | 聂克斯姆化学有限公司 | 交联催化 |
EP2586805A4 (en) | 2010-06-23 | 2015-09-30 | Asahi Glass Co Ltd | Heatable Composition and Method of Making a Hardened Film |
JP2013035959A (ja) * | 2011-08-09 | 2013-02-21 | Nippon Shokubai Co Ltd | フッ素含有芳香族系重合体 |
EP2781528A4 (en) * | 2011-11-18 | 2015-06-24 | Asahi Glass Co Ltd | CURABLE COMPOSITION, COMPOSITION FOR APPLICATION, CURED FILM, LASER PROCESSING METHOD, AND MANUFACTURING METHOD FOR MULTILAYER WIRING STRUCTURE |
JP2015129780A (ja) * | 2012-04-10 | 2015-07-16 | 旭硝子株式会社 | 非線形光学材料用組成物、塗布用組成物、非線形光学材料、光導波路および光制御デバイス |
CN111923532A (zh) * | 2019-04-07 | 2020-11-13 | 朱建余 | 一种耐磨阻燃隔热无纺布的制备方法 |
TW202222907A (zh) * | 2020-12-03 | 2022-06-16 | 日商科慕・三井氟產品股份有限公司 | 氟樹脂 |
CN113563579B (zh) * | 2021-08-17 | 2023-09-15 | 西南石油大学 | 一种偶氮苯-聚芳醚腈复合材料及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5155175A (en) | 1989-12-08 | 1992-10-13 | Intellectual Property Law Dept. | Crosslinkable fluorinated polyarylene ether composition |
WO1991016369A1 (en) * | 1990-04-17 | 1991-10-31 | Raychem Corporation | Fluorinated poly(arylene ethers) |
US5204416A (en) * | 1990-04-17 | 1993-04-20 | Raychem Corporation | Crosslinked fluorinated poly(arylene ether) |
US5115082A (en) * | 1990-04-17 | 1992-05-19 | Raychem Corporation | Fluorinated poly(arylene ether) |
US5959157A (en) * | 1995-06-26 | 1999-09-28 | Alliedsignal, Inc. | Process for making hydroxy-substituted ethynylated biphenyl compounds |
US5986045A (en) * | 1995-06-26 | 1999-11-16 | Alliedsignal Inc. | Poly(arylene ether) compositions and the method for their manufacture |
JP3969779B2 (ja) * | 1997-03-05 | 2007-09-05 | 沖電気工業株式会社 | 有機絶縁膜材料の製造方法 |
JP4843870B2 (ja) * | 2001-05-31 | 2011-12-21 | 旭硝子株式会社 | 新規ポリアリーレンエーテル、その製造方法及びその用途 |
JP2003008483A (ja) * | 2001-06-18 | 2003-01-10 | Nec Corp | アダプティブアレイアンテナ受信装置 |
CN100519623C (zh) * | 2001-07-12 | 2009-07-29 | 旭硝子株式会社 | 含氟芳香族聚合物及其用途 |
JP4501052B2 (ja) * | 2002-01-24 | 2010-07-14 | 東洋紡績株式会社 | 熱架橋性高分子固体電解質、高分子固体電解質膜及びその製造方法 |
-
2003
- 2003-09-30 JP JP2003340031A patent/JP4501391B2/ja not_active Expired - Lifetime
-
2004
- 2004-09-29 CN CNB200480025131XA patent/CN100519624C/zh active Active
- 2004-09-29 DE DE602004022839T patent/DE602004022839D1/de active Active
- 2004-09-29 KR KR1020067004525A patent/KR101026096B1/ko not_active IP Right Cessation
- 2004-09-29 EP EP04788267A patent/EP1669389B1/en not_active Not-in-force
- 2004-09-29 AT AT04788267T patent/ATE440887T1/de not_active IP Right Cessation
- 2004-09-29 WO PCT/JP2004/014200 patent/WO2005030837A1/ja active Application Filing
- 2004-09-30 TW TW093129703A patent/TW200517413A/zh not_active IP Right Cessation
-
2006
- 2006-03-30 US US11/392,727 patent/US20060173129A1/en not_active Abandoned
-
2009
- 2009-12-04 US US12/631,123 patent/US8168742B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2005105115A (ja) | 2005-04-21 |
DE602004022839D1 (de) | 2009-10-08 |
KR20060095947A (ko) | 2006-09-05 |
CN1845947A (zh) | 2006-10-11 |
WO2005030837A1 (ja) | 2005-04-07 |
US20060173129A1 (en) | 2006-08-03 |
EP1669389A1 (en) | 2006-06-14 |
EP1669389B1 (en) | 2009-08-26 |
KR101026096B1 (ko) | 2011-03-31 |
JP4501391B2 (ja) | 2010-07-14 |
US8168742B2 (en) | 2012-05-01 |
US20100144914A1 (en) | 2010-06-10 |
ATE440887T1 (de) | 2009-09-15 |
TWI336715B (zh) | 2011-02-01 |
EP1669389A4 (en) | 2007-05-02 |
CN100519624C (zh) | 2009-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |