TW200507194A - Susceptor for semiconductor manufacturing equipment, and semiconductor manufacturing equipment in which the susceptor is installed - Google Patents

Susceptor for semiconductor manufacturing equipment, and semiconductor manufacturing equipment in which the susceptor is installed

Info

Publication number
TW200507194A
TW200507194A TW093120524A TW93120524A TW200507194A TW 200507194 A TW200507194 A TW 200507194A TW 093120524 A TW093120524 A TW 093120524A TW 93120524 A TW93120524 A TW 93120524A TW 200507194 A TW200507194 A TW 200507194A
Authority
TW
Taiwan
Prior art keywords
susceptor
semiconductor manufacturing
manufacturing equipment
electrodes
electrode
Prior art date
Application number
TW093120524A
Other languages
English (en)
Inventor
Masuhiro Natsuhara
Hirohiko Nakata
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of TW200507194A publication Critical patent/TW200507194A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
TW093120524A 2003-08-01 2004-07-08 Susceptor for semiconductor manufacturing equipment, and semiconductor manufacturing equipment in which the susceptor is installed TW200507194A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003205447A JP4258309B2 (ja) 2003-08-01 2003-08-01 半導体製造装置用サセプタおよびそれを搭載した半導体製造装置

Publications (1)

Publication Number Publication Date
TW200507194A true TW200507194A (en) 2005-02-16

Family

ID=34100706

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093120524A TW200507194A (en) 2003-08-01 2004-07-08 Susceptor for semiconductor manufacturing equipment, and semiconductor manufacturing equipment in which the susceptor is installed

Country Status (3)

Country Link
US (1) US20050022744A1 (zh)
JP (1) JP4258309B2 (zh)
TW (1) TW200507194A (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4672597B2 (ja) * 2005-06-02 2011-04-20 日本碍子株式会社 基板処理装置
JP4531004B2 (ja) * 2006-03-24 2010-08-25 日本碍子株式会社 加熱装置
TW200910373A (en) * 2007-06-08 2009-03-01 Mosaid Technologies Inc Dynamic impedance control for input/output buffers
WO2013054876A1 (ja) * 2011-10-14 2013-04-18 東洋炭素株式会社 Ｃｖｄ装置、該ｃｖｄ装置を用いたサセプターの製造方法、及びサセプター
US9887478B2 (en) * 2015-04-21 2018-02-06 Varian Semiconductor Equipment Associates, Inc. Thermally insulating electrical contact probe
JP6886128B2 (ja) * 2016-11-29 2021-06-16 住友電気工業株式会社 ウエハ保持体
CA3058693C (en) 2017-04-11 2023-08-22 Enraf-Nonius B.V. Electrical device comprising filter and feedthrough capacitor
JP7178807B2 (ja) * 2018-06-25 2022-11-28 日本特殊陶業株式会社 半導体製造装置用部品
JP7175323B2 (ja) * 2018-09-28 2022-11-18 京セラ株式会社 セラミック構造体及びウェハ用システム
JP7360992B2 (ja) 2020-06-02 2023-10-13 京セラ株式会社 端子付構造体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2518962B2 (ja) * 1990-07-27 1996-07-31 日本碍子株式会社 セラミックスヒ―タ―
JP2644650B2 (ja) * 1991-12-25 1997-08-25 日本碍子株式会社 セラミックスヒーター
US6082297A (en) * 1997-09-12 2000-07-04 Novellus Sytems, Inc. Encapsulated thermofoil heater apparatus and associated methods
JP3955397B2 (ja) * 1998-09-08 2007-08-08 株式会社リコー 結晶成長装置、結晶成長方法、結晶製造装置、結晶製造方法及びＧａＮ系半導体薄膜の製造方法
JP2003146770A (ja) * 2001-07-09 2003-05-21 Ibiden Co Ltd セラミック接合体
JP3870824B2 (ja) * 2001-09-11 2007-01-24 住友電気工業株式会社 被処理物保持体、半導体製造装置用サセプタおよび処理装置
JP3966376B2 (ja) * 2001-09-11 2007-08-29 住友電気工業株式会社 被処理物保持体、処理装置および半導体製造装置用セラミックスサセプタ
JP2003151727A (ja) * 2001-11-14 2003-05-23 Toshiba Ceramics Co Ltd 面状セラミックスヒーター

Also Published As

Publication number Publication date
US20050022744A1 (en) 2005-02-03
JP4258309B2 (ja) 2009-04-30
JP2005056881A (ja) 2005-03-03

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