TW200506114A - Single crystal producing method - Google Patents

Single crystal producing method

Info

Publication number
TW200506114A
TW200506114A TW093110110A TW93110110A TW200506114A TW 200506114 A TW200506114 A TW 200506114A TW 093110110 A TW093110110 A TW 093110110A TW 93110110 A TW93110110 A TW 93110110A TW 200506114 A TW200506114 A TW 200506114A
Authority
TW
Taiwan
Prior art keywords
magnetic field
single crystal
field strength
producing method
crystal producing
Prior art date
Application number
TW093110110A
Other languages
English (en)
Inventor
Susumu Sonokawa
Ryoji Hoshi
Tatsuo Mori
Original Assignee
Shinetsu Handotai Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Handotai Kk filed Critical Shinetsu Handotai Kk
Publication of TW200506114A publication Critical patent/TW200506114A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW093110110A 2003-04-16 2004-04-12 Single crystal producing method TW200506114A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003111265A JP4193558B2 (ja) 2003-04-16 2003-04-16 単結晶の製造方法

Publications (1)

Publication Number Publication Date
TW200506114A true TW200506114A (en) 2005-02-16

Family

ID=33295992

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093110110A TW200506114A (en) 2003-04-16 2004-04-12 Single crystal producing method

Country Status (3)

Country Link
JP (1) JP4193558B2 (zh)
TW (1) TW200506114A (zh)
WO (1) WO2004092456A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4513407B2 (ja) * 2004-05-06 2010-07-28 株式会社Ｓｕｍｃｏ 単結晶の製造方法
JP2007022825A (ja) * 2005-07-13 2007-02-01 Shin Etsu Handotai Co Ltd 単結晶の製造方法
JP4710905B2 (ja) * 2005-07-13 2011-06-29 信越半導体株式会社 単結晶の製造方法
JP4535283B2 (ja) * 2005-12-05 2010-09-01 三菱マテリアル株式会社 比抵抗値の面内バラツキが少ないプラズマエッチング用単結晶シリコン電極板
JP2007210865A (ja) * 2006-02-13 2007-08-23 Sumco Corp シリコン単結晶引上装置
JP4849247B2 (ja) * 2006-12-22 2012-01-11 三菱マテリアル株式会社 比抵抗値の面内バラツキの小さい複合シリコン電極およびその製造方法
US8795432B2 (en) 2007-05-30 2014-08-05 Sumco Corporation Apparatus for pulling silicon single crystal
JP5044295B2 (ja) * 2007-06-12 2012-10-10 コバレントマテリアル株式会社 単結晶引上方法
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
JP2010100474A (ja) * 2008-10-23 2010-05-06 Covalent Materials Corp シリコン単結晶引上げ水平磁場の最適化方法およびシリコン単結晶の製造方法
JP6436031B2 (ja) * 2015-09-18 2018-12-12 信越半導体株式会社 単結晶引き上げ装置、及び単結晶引き上げ方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60221392A (ja) * 1984-04-16 1985-11-06 Toshiba Corp 単結晶生成方法
JP2940437B2 (ja) * 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JP2000247787A (ja) * 1999-02-25 2000-09-12 Toshiba Corp 単結晶の製造方法および製造装置

Also Published As

Publication number Publication date
JP2004315289A (ja) 2004-11-11
WO2004092456A1 (ja) 2004-10-28
JP4193558B2 (ja) 2008-12-10

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