TW200502706A - Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same - Google Patents

Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same

Info

Publication number
TW200502706A
TW200502706A TW093101607A TW93101607A TW200502706A TW 200502706 A TW200502706 A TW 200502706A TW 093101607 A TW093101607 A TW 093101607A TW 93101607 A TW93101607 A TW 93101607A TW 200502706 A TW200502706 A TW 200502706A
Authority
TW
Taiwan
Prior art keywords
pixels
bht
microscopic
photomask
dimensional
Prior art date
Application number
TW093101607A
Other languages
English (en)
Inventor
Christopher J Progler
Peter J Rhyins
Original Assignee
Photronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photronics Inc filed Critical Photronics Inc
Publication of TW200502706A publication Critical patent/TW200502706A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093101607A 2003-01-23 2004-01-20 Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same TW200502706A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/349,629 US6828068B2 (en) 2003-01-23 2003-01-23 Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same

Publications (1)

Publication Number Publication Date
TW200502706A true TW200502706A (en) 2005-01-16

Family

ID=32770256

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093101607A TW200502706A (en) 2003-01-23 2004-01-20 Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same

Country Status (7)

Country Link
US (3) US6828068B2 (zh)
EP (1) EP1586008A4 (zh)
JP (1) JP2006516751A (zh)
KR (1) KR20050095857A (zh)
CN (1) CN1705915A (zh)
TW (1) TW200502706A (zh)
WO (1) WO2004066358A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391778B (zh) * 2007-11-01 2013-04-01 Ulvac Coating Corp 半色調網點光罩、半色調網點光罩基板及半色調網點光罩製造方法
US11620425B2 (en) 2017-12-22 2023-04-04 D2S, Inc. Methods for modeling of a design in reticle enhancement technology

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828068B2 (en) * 2003-01-23 2004-12-07 Photronics, Inc. Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same
US7043327B2 (en) * 2003-08-12 2006-05-09 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography apparatus and method employing non-environmental variable correction
US7003758B2 (en) * 2003-10-07 2006-02-21 Brion Technologies, Inc. System and method for lithography simulation
KR100552266B1 (ko) * 2003-12-31 2006-02-20 동부아남반도체 주식회사 포토 마스크
KR100644018B1 (ko) * 2004-06-18 2006-11-10 매그나칩 반도체 유한회사 이미지센서의 마이크로렌즈 형성 방법
JP4904034B2 (ja) * 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
US7682981B2 (en) * 2005-01-27 2010-03-23 Contour Semiconductor, Inc. Topography transfer method with aspect ratio scaling
KR100674964B1 (ko) * 2005-03-14 2007-01-26 삼성전자주식회사 포토마스크 교정 방법 및 시스템 장치
JP4817907B2 (ja) * 2006-03-22 2011-11-16 Ｏｋｉセミコンダクタ株式会社 レジストパターン形成用のフォトマスク及びその製造方法、並びにこのフォトマスクを用いたレジストパターンの形成方法
DE102006019963B4 (de) * 2006-04-28 2023-12-07 Envisiontec Gmbh Vorrichtung und Verfahren zur Herstellung eines dreidimensionalen Objekts durch schichtweises Verfestigen eines unter Einwirkung von elektromagnetischer Strahlung verfestigbaren Materials mittels Maskenbelichtung
DE102006019964C5 (de) 2006-04-28 2021-08-26 Envisiontec Gmbh Vorrichtung und Verfahren zur Herstellung eines dreidimensionalen Objekts mittels Maskenbelichtung
JP4887958B2 (ja) * 2006-07-27 2012-02-29 凸版印刷株式会社 フォトマスク
JP2008089923A (ja) * 2006-09-29 2008-04-17 Oki Electric Ind Co Ltd 光学素子の製造方法
KR100873275B1 (ko) * 2007-03-19 2008-12-11 매그나칩 반도체 유한회사 이미지센서의 제조 방법
JP4935452B2 (ja) * 2007-03-26 2012-05-23 凸版印刷株式会社 グレーマスク及びグレーマスク用パターン製造方法
US8191018B1 (en) * 2007-07-17 2012-05-29 Kovio, Inc. Methods and software for printing materials onto a substrate
US9005848B2 (en) * 2008-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
US7897302B2 (en) * 2008-08-18 2011-03-01 Sharp Laboratories Of America, Inc. Error diffusion-derived sub-resolutional grayscale reticle
WO2010046407A2 (en) * 2008-10-22 2010-04-29 Micronic Laser Systems Ab Multi-focus method of enhanced three-dimensional exposure of resist
JP4811520B2 (ja) * 2009-02-20 2011-11-09 住友金属鉱山株式会社 半導体装置用基板の製造方法、半導体装置の製造方法、半導体装置用基板及び半導体装置
JP2010224125A (ja) * 2009-03-23 2010-10-07 Canon Inc 露光用マスク、露光方法、及び光学素子の製造方法
US9005849B2 (en) * 2009-06-17 2015-04-14 Photronics, Inc. Photomask having a reduced field size and method of using the same
JP5653745B2 (ja) * 2010-12-22 2015-01-14 日東電工株式会社 光導波路の製法
US8359562B2 (en) * 2011-01-11 2013-01-22 Infineon Technologies Ag System and method for semiconductor device fabrication using modeling
JP2012123409A (ja) * 2012-02-03 2012-06-28 Hoya Corp テストマスク
WO2013163300A1 (en) * 2012-04-25 2013-10-31 University Of Louisville Research Foundation, Inc. Automated mask file generation from 3-d modeling
US8975195B2 (en) * 2013-02-01 2015-03-10 GlobalFoundries, Inc. Methods for optical proximity correction in the design and fabrication of integrated circuits
US10185799B2 (en) * 2014-04-22 2019-01-22 Mentor Graphics Corporation Verification of photonic integrated circuits
WO2016068915A1 (en) * 2014-10-29 2016-05-06 Hewlett-Packard Development Company, L.P. Three-dimensional halftoning
WO2018022000A1 (en) * 2016-07-26 2018-02-01 Hewlett-Packard Development Company, L.P. Three-dimensional object substructures
CN108242398A (zh) * 2016-12-23 2018-07-03 上海新微技术研发中心有限公司 在晶片表面形成复杂曲面的方法
CN106773524A (zh) * 2017-02-20 2017-05-31 京东方科技集团股份有限公司 掩膜板

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6749864B2 (en) * 1986-02-13 2004-06-15 Takeda Chemical Industries, Ltd. Stabilized pharmaceutical composition
US4908780A (en) * 1988-10-14 1990-03-13 Sun Microsystems, Inc. Anti-aliasing raster operations utilizing sub-pixel crossing information to control pixel shading
JPH05224398A (ja) * 1992-02-12 1993-09-03 Kuraray Co Ltd 透過率変調型フォトマスク、およびそれを用いる光学部品の製造方法
US5497269A (en) 1992-06-25 1996-03-05 Lockheed Missiles And Space Company, Inc. Dispersive microlens
US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
US5420720A (en) 1992-06-25 1995-05-30 Lockheed Missiles & Space Company, Inc. Internally cooled large aperture microlens array with monolithically integrated microscanner
US5444572A (en) 1992-11-27 1995-08-22 Lockheed Missiles & Space Company, Inc. Wavefront corrector for scanning microlens arrays
KR0161389B1 (ko) * 1995-02-16 1999-01-15 윤종용 마스크 및 이를 사용한 패턴형성방법
JP3889091B2 (ja) * 1996-09-03 2007-03-07 三菱電機株式会社 半導体開発情報統合装置
US6420073B1 (en) * 1997-03-21 2002-07-16 Digital Optics Corp. Fabricating optical elements using a photoresist formed from proximity printing of a gray level mask
US6057855A (en) * 1997-07-02 2000-05-02 Hewlett-Packard Company Method and apparatus for providing polygon pixel sub-sample information using incremental means
US6406818B1 (en) 1999-03-31 2002-06-18 Photronics, Inc. Method of manufacturing photomasks by plasma etching with resist stripped
US6335151B1 (en) 1999-06-18 2002-01-01 International Business Machines Corporation Micro-surface fabrication process
JP2001272764A (ja) * 2000-03-24 2001-10-05 Canon Inc 投影露光用フォトマスク、およびそれを用いた投影露光方法
JP3344418B2 (ja) * 2000-11-10 2002-11-11 松下電器産業株式会社 露光装置、半導体薄膜、薄膜トランジスタ、液晶表示装置、ｅｌ表示装置およびその製造方法
WO2002071738A1 (fr) * 2001-03-02 2002-09-12 Dai Nippon Printing Co., Ltd. Procede de creation d'un masque de tremblement et dispositif de creation
JP2002288487A (ja) * 2001-03-27 2002-10-04 Mitsubishi Electric Corp 注文方法およびシステム
US6844119B2 (en) * 2002-07-30 2005-01-18 Hoya Corporation Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask
US6828068B2 (en) * 2003-01-23 2004-12-07 Photronics, Inc. Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same
JP4296943B2 (ja) * 2003-01-28 2009-07-15 ソニー株式会社 露光用マスクの製造方法および露光方法ならびに３次元形状の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI391778B (zh) * 2007-11-01 2013-04-01 Ulvac Coating Corp 半色調網點光罩、半色調網點光罩基板及半色調網點光罩製造方法
US11620425B2 (en) 2017-12-22 2023-04-04 D2S, Inc. Methods for modeling of a design in reticle enhancement technology
US11972187B2 (en) 2017-12-22 2024-04-30 D2S, Inc. Methods for modeling of a design in reticle enhancement technology

Also Published As

Publication number Publication date
WO2004066358A2 (en) 2004-08-05
US20060210891A1 (en) 2006-09-21
US7074530B2 (en) 2006-07-11
CN1705915A (zh) 2005-12-07
EP1586008A2 (en) 2005-10-19
US20050118515A1 (en) 2005-06-02
WO2004066358A3 (en) 2004-11-11
US7473500B2 (en) 2009-01-06
KR20050095857A (ko) 2005-10-04
EP1586008A4 (en) 2007-01-31
JP2006516751A (ja) 2006-07-06
US6828068B2 (en) 2004-12-07

Similar Documents

Publication Publication Date Title
TW200502706A (en) Binary half tone photomasks and microscopic three-dimensional devices and method of fabricating the same
US7364838B2 (en) Gray level imaging masks, optical imaging apparatus for gray level imaging masks and methods for encoding mask and use of the masks
EP1879072A3 (en) Original data producing method and original data producing program
US9862147B2 (en) Method of stereolithography fabrication and photo-curing photosensitive resin
US7340382B2 (en) Lens array and display apparatus using same
EP1317142A3 (en) Image-forming system with enhanced gray levels
TWI263797B (en) Zoom lens system
EP2023205A2 (en) Apparatus for forming nano pattern and method for forming the nano pattern using the same
EP2045663A3 (en) Calculation method, generation method, program, exposure method, and mask fabrication method
WO2002027402A3 (en) Illumination system particularly for microlithography
ATE227434T1 (de) Verfahren und vorrichtung zur objektabbildung
US7320946B2 (en) Method for generating dynamic mask pattern
AU3704397A (en) Fabricating optical waveguide gratings
ATE422425T1 (de) Datenträger und verfahren zu seiner herstellung
WO2007075995A3 (en) Optically enhanced image sequences
CN102147927B (zh) 一种地形纹理贴图的处理方法和处理装置
CN104155852A (zh) 一种光刻机光源的优化方法
DE102014207866A1 (de) Vorrichtung und Verfahren zur Regelung der Positionierung einer Vielzahl von verstellbaren Spiegel-Elementen einer Vielspiegel-Anordnung
EP1790943A3 (en) Method and system for calibrating a fiber optic gyroscope
CN107561700A (zh) 一种近眼显示系统、虚拟现实设备和增强现实设备
TW200632373A (en) Optical projection system, exposure apparatus and method of fabricating devices
JP2005257740A5 (zh)
EP1256846A3 (en) Optical proximity correction
WO2005015310A3 (en) Illumination system for a microlithographic projection exposure apparatus
KR20220149780A (ko) 회절 광학 소자