TW200502681A - Photoresist compositions - Google Patents

Photoresist compositions

Info

Publication number
TW200502681A
TW200502681A TW093106365A TW93106365A TW200502681A TW 200502681 A TW200502681 A TW 200502681A TW 093106365 A TW093106365 A TW 093106365A TW 93106365 A TW93106365 A TW 93106365A TW 200502681 A TW200502681 A TW 200502681A
Authority
TW
Taiwan
Prior art keywords
photoresist compositions
composition
preparing
solvent
weight percent
Prior art date
Application number
TW093106365A
Other languages
English (en)
Inventor
Neville J Eilbeck
Original Assignee
Clariant Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Int Ltd filed Critical Clariant Int Ltd
Publication of TW200502681A publication Critical patent/TW200502681A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW093106365A 2003-04-01 2004-03-10 Photoresist compositions TW200502681A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/404,612 US6790582B1 (en) 2003-04-01 2003-04-01 Photoresist compositions

Publications (1)

Publication Number Publication Date
TW200502681A true TW200502681A (en) 2005-01-16

Family

ID=32927346

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106365A TW200502681A (en) 2003-04-01 2004-03-10 Photoresist compositions

Country Status (7)

Country Link
US (2) US6790582B1 (zh)
EP (1) EP1623274A2 (zh)
JP (1) JP2006522353A (zh)
KR (1) KR20060005349A (zh)
CN (1) CN1768302A (zh)
TW (1) TW200502681A (zh)
WO (1) WO2004088423A2 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
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TWI295410B (en) * 2002-11-29 2008-04-01 Zeon Corp Radiation-sensitive resin composition
US6790582B1 (en) * 2003-04-01 2004-09-14 Clariant Finance Bvi Limited Photoresist compositions
JP4235698B2 (ja) * 2003-08-21 2009-03-11 旭化成ケミカルズ株式会社 感光性組成物およびその硬化物
KR101319271B1 (ko) * 2006-06-09 2013-10-16 엘지디스플레이 주식회사 인쇄용 레지스트, 인쇄용 레지스트 제조방법 및 이를이용한 패턴형성방법
JP2008281990A (ja) * 2007-02-28 2008-11-20 Rohm & Haas Electronic Materials Llc 新規なポリマーおよびフォトレジスト組成物
KR101392291B1 (ko) 2007-04-13 2014-05-07 주식회사 동진쎄미켐 포토레지스트 조성물 및 이를 이용한 박막트랜지스터기판의 제조방법
JP5753074B2 (ja) * 2009-12-28 2015-07-22 株式会社 マイクロプロセス 感光性樹脂組成物、感光性ドライフィルムおよびパターン形成方法
US8647807B2 (en) 2009-12-28 2014-02-11 Micro Process Inc. Photosensitive resin composition, photosensitive dry film and method for forming pattern
JP5630374B2 (ja) * 2010-06-11 2014-11-26 信越化学工業株式会社 マイクロ構造体の製造方法及び光パターン形成性犠牲膜形成用組成物
JP5853844B2 (ja) 2011-05-20 2016-02-09 信越化学工業株式会社 マイクロ構造体の製造方法及び光パターン形成性犠牲膜形成用組成物
KR101432603B1 (ko) * 2011-12-29 2014-08-21 제일모직주식회사 감광성 노볼락 수지, 이를 포함하는 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 이를 포함하는 반도체 소자
US8822123B2 (en) * 2012-07-13 2014-09-02 Momentive Specialty Chemicals Inc. Polymeric materials and methods for making the polymeric materials
KR102012830B1 (ko) * 2013-05-21 2019-11-05 동우 화인켐 주식회사 포지티브 포토레지스트 조성물
KR20150101511A (ko) * 2014-02-26 2015-09-04 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
JP2021530732A (ja) * 2018-07-09 2021-11-11 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated ライン倍増のためのフォトレジスト組成物

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CA1085212A (en) 1975-05-27 1980-09-09 Ronald H. Engebrecht Use of volatile carboxylic acids in improved photoresists containing quinone diazides
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US5700620A (en) 1993-12-24 1997-12-23 Fuji Photo Film Co., Ltd. Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
US5529880A (en) 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
US5589553A (en) 1995-03-29 1996-12-31 Shipley Company, L.L.C. Esterification product of aromatic novolak resin with quinone diazide sulfonyl group
EP0737895B1 (en) * 1995-04-10 1999-09-08 Shipley Company LLC Photoresist with photoactive compound mixtures
JP3287234B2 (ja) * 1996-09-19 2002-06-04 信越化学工業株式会社 リフトオフ法用ポジ型レジスト組成物及びパターン形成方法
US5932396A (en) * 1996-10-18 1999-08-03 Tdk Corporation Method for forming magnetic poles in thin film magnetic heads
US6166218A (en) * 1996-11-07 2000-12-26 Ciba Specialty Chemicals Corporation Benzotriazole UV absorbers having enhanced durability
IT1299220B1 (it) * 1998-05-12 2000-02-29 Lastra Spa Composizione sensibile sia a radiazioni ir che a radiazioni uv e lastra litografica
JP3688469B2 (ja) 1998-06-04 2005-08-31 東京応化工業株式会社 ポジ型ホトレジスト組成物およびこれを用いたレジストパターンの形成方法
JP3365318B2 (ja) * 1998-08-12 2003-01-08 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
EP1055969A4 (en) * 1998-12-10 2002-01-16 Clariant Finance Bvi Ltd PHOTOSENSITIVE RESIN COMPOSITION
JP3705332B2 (ja) * 1999-01-11 2005-10-12 信越化学工業株式会社 感光性樹脂組成物及びその製造方法
JP4068253B2 (ja) * 1999-01-27 2008-03-26 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性樹脂組成物
KR100323831B1 (ko) 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
JP3743490B2 (ja) * 2000-02-16 2006-02-08 信越化学工業株式会社 熱硬化性感光材料
US6436601B1 (en) * 2001-06-25 2002-08-20 Citiplate, Inc. Thermally sensitive coating compositions containing mixed diazo novolaks useful for lithographic elements
US6790582B1 (en) * 2003-04-01 2004-09-14 Clariant Finance Bvi Limited Photoresist compositions
US6905809B2 (en) * 2003-04-01 2005-06-14 Clariant Finance (Bvi) Limited Photoresist compositions

Also Published As

Publication number Publication date
US6790582B1 (en) 2004-09-14
JP2006522353A (ja) 2006-09-28
CN1768302A (zh) 2006-05-03
KR20060005349A (ko) 2006-01-17
WO2004088423A2 (en) 2004-10-14
WO2004088423A3 (en) 2004-11-25
EP1623274A2 (en) 2006-02-08
US20040197704A1 (en) 2004-10-07

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