TW200501456A - Light-emitting diode - Google Patents

Light-emitting diode

Info

Publication number
TW200501456A
TW200501456A TW093111316A TW93111316A TW200501456A TW 200501456 A TW200501456 A TW 200501456A TW 093111316 A TW093111316 A TW 093111316A TW 93111316 A TW93111316 A TW 93111316A TW 200501456 A TW200501456 A TW 200501456A
Authority
TW
Taiwan
Prior art keywords
light
emitting diode
electrode
dopant
namely
Prior art date
Application number
TW093111316A
Other languages
English (en)
Inventor
Hiroshi Kawazoe
Masahiro Orita
Hiroaki Yanagita
Satoshi Kobayashi
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200501456A publication Critical patent/TW200501456A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3018—AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3027—IV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
TW093111316A 2003-04-23 2004-04-22 Light-emitting diode TW200501456A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003119065 2003-04-23

Publications (1)

Publication Number Publication Date
TW200501456A true TW200501456A (en) 2005-01-01

Family

ID=33308092

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093111316A TW200501456A (en) 2003-04-23 2004-04-22 Light-emitting diode

Country Status (7)

Country Link
US (1) US20060261350A1 (zh)
EP (1) EP1622207A4 (zh)
JP (1) JP4504309B2 (zh)
KR (1) KR100746121B1 (zh)
CN (1) CN100485977C (zh)
TW (1) TW200501456A (zh)
WO (1) WO2004095591A1 (zh)

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* Cited by examiner, † Cited by third party
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KR100655894B1 (ko) * 2004-05-06 2006-12-08 서울옵토디바이스주식회사 색온도 및 연색성이 우수한 파장변환 발광장치
KR100658700B1 (ko) 2004-05-13 2006-12-15 서울옵토디바이스주식회사 Ｒｇｂ 발광소자와 형광체를 조합한 발광장치
US8308980B2 (en) 2004-06-10 2012-11-13 Seoul Semiconductor Co., Ltd. Light emitting device
KR100665298B1 (ko) * 2004-06-10 2007-01-04 서울반도체 주식회사 발광장치
KR100665299B1 (ko) * 2004-06-10 2007-01-04 서울반도체 주식회사 발광물질
KR101258397B1 (ko) * 2005-11-11 2013-04-30 서울반도체 주식회사 구리 알칼리토 실리케이트 혼성 결정 형광체
KR101055772B1 (ko) * 2005-12-15 2011-08-11 서울반도체 주식회사 발광장치
JP5294565B2 (ja) * 2006-03-17 2013-09-18 キヤノン株式会社 発光素子及び発光素子の製造方法
KR100875443B1 (ko) * 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
KR101258227B1 (ko) * 2006-08-29 2013-04-25 서울반도체 주식회사 발광 소자
RU2467051C2 (ru) 2007-08-22 2012-11-20 Сеул Семикондактор Ко., Лтд. Люминофоры на основе нестехиометрических тетрагональных силикатов меди и щелочноземельного металла и способ их получения
KR101055769B1 (ko) 2007-08-28 2011-08-11 서울반도체 주식회사 비화학양론적 정방정계 알칼리 토류 실리케이트 형광체를채택한 발광 장치
TWI367530B (en) * 2007-12-25 2012-07-01 Ind Tech Res Inst Chlorine, fluorine and lithium co-doped transparent conductive films and methods for fabricating the same
JP5059628B2 (ja) * 2008-01-10 2012-10-24 株式会社日立製作所 半導体装置
JP5130996B2 (ja) * 2008-03-28 2013-01-30 Ｔｄｋ株式会社 発光素子
KR101055762B1 (ko) * 2009-09-01 2011-08-11 서울반도체 주식회사 옥시오소실리케이트 발광체를 갖는 발광 물질을 채택한 발광 장치
DE102009030205A1 (de) * 2009-06-24 2010-12-30 Litec-Lp Gmbh Leuchtstoffe mit Eu(II)-dotierten silikatischen Luminophore
TWI661575B (zh) * 2018-07-20 2019-06-01 錼創顯示科技股份有限公司 微型發光元件及顯示裝置
KR20200100899A (ko) * 2019-02-18 2020-08-27 삼성디스플레이 주식회사 표시 장치

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CA1267965A (en) * 1985-07-26 1990-04-17 Wolodymyr Czubatyj Double injection field effect transistors
JPS6486572A (en) * 1987-09-28 1989-03-31 Sharp Kk Amorphous thin film light emitting element
JPH02224377A (ja) * 1989-02-27 1990-09-06 Meidensha Corp 発光素子の製造方法
JPH04120775A (ja) * 1990-09-12 1992-04-21 Hitachi Cable Ltd トンネル接合発光素子
JPH05259507A (ja) * 1991-03-12 1993-10-08 Nippon Steel Corp 薄膜発光素子とその作製方法
JP3153292B2 (ja) * 1991-11-11 2001-04-03 松下電器産業株式会社 アバランシェ発光装置
US5289112A (en) * 1992-09-21 1994-02-22 Hewlett-Packard Company Light-emitting diode array current power supply including switched cascode transistors
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JPH07231142A (ja) * 1994-02-18 1995-08-29 Mitsubishi Electric Corp 半導体発光素子
JP3835830B2 (ja) * 1994-05-12 2006-10-18 株式会社神戸製鋼所 短波長発光素子
JPH08330624A (ja) * 1995-06-02 1996-12-13 Kobe Steel Ltd ダイヤモンド発光素子
JP2757915B2 (ja) * 1996-01-19 1998-05-25 日本電気株式会社 Ｉｉ−ｖｉ族半導体デバイス及びその製造方法
JPH104212A (ja) * 1996-06-17 1998-01-06 Jgc Corp 発光ダイオード
US6088375A (en) * 1998-02-27 2000-07-11 Philips Electronics North America Corporation Semiconductor device comprising p-type ZnMgSSe layer
JP3441059B2 (ja) * 1999-12-10 2003-08-25 スタンレー電気株式会社 半導体素子及びその製造方法
JP2002170985A (ja) * 2000-09-19 2002-06-14 Natl Science Council Of Roc 緑青白非晶質ｐ−ｉ−ｎ薄膜発光ダイオード及びその製造方法
JP3940596B2 (ja) * 2001-05-24 2007-07-04 松下電器産業株式会社 照明光源
TW502438B (en) * 2001-07-23 2002-09-11 Uni Light Technology Inc Semiconductor device with ohmic contact and method for producing the same
WO2003071608A1 (en) * 2002-02-19 2003-08-28 Hoya Corporation Light-emitting device of field-effect transistor type

Also Published As

Publication number Publication date
US20060261350A1 (en) 2006-11-23
JPWO2004095591A1 (ja) 2006-09-21
WO2004095591B1 (ja) 2005-01-27
WO2004095591A1 (ja) 2004-11-04
CN1791986A (zh) 2006-06-21
EP1622207A4 (en) 2007-08-08
KR100746121B1 (ko) 2007-08-03
EP1622207A1 (en) 2006-02-01
JP4504309B2 (ja) 2010-07-14
KR20060006040A (ko) 2006-01-18
CN100485977C (zh) 2009-05-06

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