TW200501160A - Multi-level memory device and methods for programming and reading the same - Google Patents
Multi-level memory device and methods for programming and reading the sameInfo
- Publication number
- TW200501160A TW200501160A TW092131759A TW92131759A TW200501160A TW 200501160 A TW200501160 A TW 200501160A TW 092131759 A TW092131759 A TW 092131759A TW 92131759 A TW92131759 A TW 92131759A TW 200501160 A TW200501160 A TW 200501160A
- Authority
- TW
- Taiwan
- Prior art keywords
- reading
- methods
- programming
- same
- memory device
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/465,012 US7180767B2 (en) | 2003-06-18 | 2003-06-18 | Multi-level memory device and methods for programming and reading the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI223258B TWI223258B (en) | 2004-11-01 |
TW200501160A true TW200501160A (en) | 2005-01-01 |
Family
ID=33418170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092131759A TWI223258B (en) | 2003-06-18 | 2003-11-13 | Multi-level memory device and methods for programming and reading the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US7180767B2 (zh) |
EP (1) | EP1489623B1 (zh) |
JP (1) | JP5611499B2 (zh) |
CN (1) | CN100578668C (zh) |
DE (1) | DE60324117D1 (zh) |
TW (1) | TWI223258B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7308067B2 (en) | 2003-08-04 | 2007-12-11 | Intel Corporation | Read bias scheme for phase change memories |
US7138687B2 (en) * | 2004-01-26 | 2006-11-21 | Macronix International Co., Ltd. | Thin film phase-change memory |
ATE488842T1 (de) * | 2004-09-30 | 2010-12-15 | Nxp Bv | Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand |
US8116159B2 (en) * | 2005-03-30 | 2012-02-14 | Ovonyx, Inc. | Using a bit specific reference level to read a resistive memory |
KR100684908B1 (ko) * | 2006-01-09 | 2007-02-22 | 삼성전자주식회사 | 다수 저항 상태를 갖는 저항 메모리 요소, 저항 메모리 셀및 그 동작 방법 그리고 상기 저항 메모리 요소를 적용한데이터 처리 시스템 |
US20070267620A1 (en) * | 2006-05-18 | 2007-11-22 | Thomas Happ | Memory cell including doped phase change material |
US20080019257A1 (en) * | 2006-07-18 | 2008-01-24 | Jan Boris Philipp | Integrated circuit with resistivity changing material having a step-like programming characteristitic |
US8084799B2 (en) * | 2006-07-18 | 2011-12-27 | Qimonda Ag | Integrated circuit with memory having a step-like programming characteristic |
US7688618B2 (en) * | 2006-07-18 | 2010-03-30 | Qimonda North America Corp. | Integrated circuit having memory having a step-like programming characteristic |
KR100887069B1 (ko) * | 2007-07-24 | 2009-03-04 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치 |
US7881100B2 (en) * | 2008-04-08 | 2011-02-01 | Micron Technology, Inc. | State machine sensing of memory cells |
US20100090189A1 (en) * | 2008-09-15 | 2010-04-15 | Savransky Semyon D | Nanoscale electrical device |
US7885101B2 (en) * | 2008-12-29 | 2011-02-08 | Numonyx B.V. | Method for low-stress multilevel reading of phase change memory cells and multilevel phase change memory |
KR101057725B1 (ko) * | 2008-12-31 | 2011-08-18 | 주식회사 하이닉스반도체 | 멀티 레벨 셀 데이터 센싱 장치 및 그 방법 |
US7929338B2 (en) | 2009-02-24 | 2011-04-19 | International Business Machines Corporation | Memory reading method for resistance drift mitigation |
US8605495B2 (en) | 2011-05-09 | 2013-12-10 | Macronix International Co., Ltd. | Isolation device free memory |
US9281061B2 (en) | 2012-09-19 | 2016-03-08 | Micron Technology, Inc. | Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit |
KR102157357B1 (ko) * | 2014-06-16 | 2020-09-17 | 삼성전자 주식회사 | 메모리 장치 및 상기 메모리 장치의 독출 방법 |
JP2016033843A (ja) * | 2014-07-31 | 2016-03-10 | 株式会社東芝 | 不揮発性記憶装置およびその駆動方法 |
US10134470B2 (en) | 2015-11-04 | 2018-11-20 | Micron Technology, Inc. | Apparatuses and methods including memory and operation of same |
US9978810B2 (en) | 2015-11-04 | 2018-05-22 | Micron Technology, Inc. | Three-dimensional memory apparatuses and methods of use |
US10446226B2 (en) | 2016-08-08 | 2019-10-15 | Micron Technology, Inc. | Apparatuses including multi-level memory cells and methods of operation of same |
US10546632B2 (en) | 2017-12-14 | 2020-01-28 | Micron Technology, Inc. | Multi-level self-selecting memory device |
US10381075B2 (en) | 2017-12-14 | 2019-08-13 | Micron Technology, Inc. | Techniques to access a self-selecting memory device |
US11302390B2 (en) * | 2020-07-10 | 2022-04-12 | Micron Technology, Inc. | Reading a multi-level memory cell |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3530441A (en) | 1969-01-15 | 1970-09-22 | Energy Conversion Devices Inc | Method and apparatus for storing and retrieving information |
US4199692A (en) * | 1978-05-16 | 1980-04-22 | Harris Corporation | Amorphous non-volatile ram |
JP3454821B2 (ja) * | 1991-08-19 | 2003-10-06 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 電気的に消去可能な、直接重ね書き可能なマルチビット単セルメモリ素子およびそれらから作製したアレイ |
US5508958A (en) * | 1994-09-29 | 1996-04-16 | Intel Corporation | Method and apparatus for sensing the state of floating gate memory cells by applying a variable gate voltage |
US5714768A (en) * | 1995-10-24 | 1998-02-03 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US5687112A (en) * | 1996-04-19 | 1997-11-11 | Energy Conversion Devices, Inc. | Multibit single cell memory element having tapered contact |
JP3930074B2 (ja) * | 1996-09-30 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体集積回路及びデータ処理システム |
US5812441A (en) * | 1996-10-21 | 1998-09-22 | Micron Technology, Inc. | MOS diode for use in a non-volatile memory cell |
US5912839A (en) * | 1998-06-23 | 1999-06-15 | Energy Conversion Devices, Inc. | Universal memory element and method of programming same |
US6141241A (en) * | 1998-06-23 | 2000-10-31 | Energy Conversion Devices, Inc. | Universal memory element with systems employing same and apparatus and method for reading, writing and programming same |
WO2000048196A1 (en) * | 1999-02-11 | 2000-08-17 | Arizona Board Of Regents | Programmable microelectronic devices and methods of forming and programming same |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US6563156B2 (en) * | 2001-03-15 | 2003-05-13 | Micron Technology, Inc. | Memory elements and methods for making same |
US6590807B2 (en) * | 2001-08-02 | 2003-07-08 | Intel Corporation | Method for reading a structural phase-change memory |
JP2003100084A (ja) * | 2001-09-27 | 2003-04-04 | Toshiba Corp | 相変化型不揮発性記憶装置 |
JP3749847B2 (ja) * | 2001-09-27 | 2006-03-01 | 株式会社東芝 | 相変化型不揮発性記憶装置及びその駆動回路 |
DE60137788D1 (de) * | 2001-12-27 | 2009-04-09 | St Microelectronics Srl | Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix |
EP1324345A1 (en) * | 2001-12-27 | 2003-07-02 | STMicroelectronics S.r.l. | Single supply voltage, nonvolatile memory device with cascoded column decoding |
-
2003
- 2003-06-18 US US10/465,012 patent/US7180767B2/en not_active Expired - Lifetime
- 2003-11-13 TW TW092131759A patent/TWI223258B/zh not_active IP Right Cessation
- 2003-11-19 DE DE60324117T patent/DE60324117D1/de not_active Expired - Lifetime
- 2003-11-19 EP EP03026610A patent/EP1489623B1/en not_active Expired - Lifetime
-
2004
- 2004-02-25 CN CN200410006005A patent/CN100578668C/zh not_active Expired - Lifetime
- 2004-05-07 JP JP2004138733A patent/JP5611499B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN100578668C (zh) | 2010-01-06 |
TWI223258B (en) | 2004-11-01 |
EP1489623A1 (en) | 2004-12-22 |
DE60324117D1 (de) | 2008-11-27 |
EP1489623B1 (en) | 2008-10-15 |
CN1574091A (zh) | 2005-02-02 |
JP2005012186A (ja) | 2005-01-13 |
JP5611499B2 (ja) | 2014-10-22 |
US7180767B2 (en) | 2007-02-20 |
US20040257854A1 (en) | 2004-12-23 |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |