TW200419742A - Semiconductor package with embedded heat spreader abstract of the disclosure - Google Patents
Semiconductor package with embedded heat spreader abstract of the disclosure Download PDFInfo
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- TW200419742A TW200419742A TW092106880A TW92106880A TW200419742A TW 200419742 A TW200419742 A TW 200419742A TW 092106880 A TW092106880 A TW 092106880A TW 92106880 A TW92106880 A TW 92106880A TW 200419742 A TW200419742 A TW 200419742A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000012790 adhesive layer Substances 0.000 claims abstract description 29
- 239000013078 crystal Substances 0.000 claims description 15
- 230000017525 heat dissipation Effects 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000012536 packaging technology Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Description
200419742
i、發明說明(l) [發明所屬之技術領域 本發明係有關於一種半導體封裝技術,特別是 一種接置有散熱片之半導體封裝件,其可讓接置$ i關於 較先前技術更為穩固而且牢靠地黏結於基板上而τ,熱片 落。 而不易脫 [先前技術] 種先進的 來安置半 ,亦即所 單元銲結 球柵陣列技術(Bal 1 Grid Array,BGA)為〜 半導體封裝技術’其特點在於採用一基板的正面 導體晶片,並於該基板的背面植置上複數個銲球 •之球柵陣列,以藉由此球栅陣列將整個的封襄 及電性連接至外部之印刷電路板。 覆晶型球柵陣列技術(FI ip-Chip Bal 1 Grid F C B G A )則為一種改良型之b G A封裝技術,其特點在於其所 封政之半導體晶片係以正面朝下之倒置方式藉由銲塊而銲 結至基板正面,並藉由基板背面上所設置之球栅陣列而銲 結及電性連接至外部之印刷電路板。由於F c b G A封裝結構 中不需要使用.較佔空間之銲線來將半導體晶片電性連接至 基板丄因此可使得整體之封裝尺寸製作得更為輕薄短小。 第1圖之剖面結構示意圖係顯示一典型之接置有散熱 狀之F⑶以封裝件的剖面結構形態。如圖所示,此FCBGA封 =件至 '包含:(a〉一基板1 〇 ; ( b }至少一半導體晶片2 0 ; 上黏膠層3 0 ; ( d )—散熱片4 〇 ;以及(e )—球柵陣列 基板1 0具有一正面1 〇 a和一背面1 〇 b,且其正面1 0 a係
17213. ptd 第6頁 200419742 五、發明說明(2) 預先劃分成一置晶區1 1和一散熱片接置區丨2,基板1 〇上的 置晶區1 1係用來以覆晶方式安置該半導體晶片2 〇。當晶片 20安置於定位後,便可將一膠黏劑塗佈於基板1〇的散熱片 接置區1 2上而形成黏膠層3 0。 散熱片4 0包括一高架部4 1和一支撐部4 2,且其係接置 於该基板1 0的散熱片接置區1 2上;其接置方式為將支撐部 42藉$黏膠層30而黏貼至基板10的散熱片接置區12上,並 使得冋架部4 1接觸至倒置之晶片2 〇的背面(亦即晶片2 〇的 非作用面),例如為藉由一導熱性黏膠層21而黏貼至倒置 之晶片2 0的为面’藉此而使得晶片2 〇可透過散熱片4 〇來進 行散熱作用。 然而上述之第1圖所示之FCBGA封裝結構的一項缺點在 於其製造或搬運過程中’散熱片4 0易從基板1 〇上脫落而造 成品質問題。此缺點的原因例如包括基板丨〇之正面1 〇 3沾 黏到異物使其潔淨度不佳而影響到黏膠層3 〇的黏著力、散 熱片40和基板1 0之間的熱膨脹係數差異而於高溫處理後產 生熱應力而造.成形變、搬運過程使得散熱片4〇受到橫向剪 力(如第1圖中Fx之箭頭所示)等。若散熱片4〇從基板1 〇上一 脫落將降低F C B G A封裝件之良率。 相關之專利技術例如包括美國專利第5 , 4 5 9,3 6 8號 "SURFACE ACCOUSTIC WAVE DEVICE MOUNTED MODULE";美 國專利第 5, 637, 920號”HIGH CONTACT DENSITY BALL GRID ARRAY PACAGE FOR FLIP-CHIPS”#。然而此些及其它的先 前專利技術均未有對上述之問題提出適當的解決方法。
17213. ptd 第 7 頁 200419742 五、發明說明(3) 4發明内容] 鑒於以上所述習知技術之缺點,本發明之主要目的便 是在於提供一種新的半導體封裝技術,其可用以製作接置 有散熱片的半導體封裝件,且可讓接置之散熱片較先前技 .術更為穩固而且牢靠地黏結於基板上而不易脫落。 本發明之半導體封裝技術可用以製作一接置有散熱片 之半導體封裝件,例如為一 FCBGA封裝件,且其特點在於 形成栓孔部於基板的散熱片接置區、或散熱片的支撐部的 底面、或同時形成於基板的散熱片接置區和散熱片的支撐 告y底面,使得黏膠可填入至此些栓孔部之中,並於固化 後形成一栓銷結構來協助散熱片抵抗橫向剪力。此外,由 於該些栓孔部的設置可增加基板和散熱片與黏膠層之間的 接觸面積,因此可增加散熱片與基板之間的黏結力,使得 散熱片.更穩固而牢靠地黏結至基板。 [實施方式] 以下即配合所附之圖式,詳細揭露說明本發明接置有 散熱片之半導體封裝件之各種不同的實施例。於此些實施 例中,本發明係應用於覆晶型球栅陣列式(F 1 i p - C h i p -Ball-Grid-Array,FCBGA)封裝件。 實施例(第2A至2C圖) 第2 A圖即顯示本發明接置有散熱片之半導體封裝件之 第一實施例的剖面結構形態。如圖所示,此半導體封裝件 刺如為一 F C B G A封裝件,其組成構件至少包含:(a ) —基板 110; (b)至少一半導體晶片120; (c)—黏膠層130; (d)—
17213.ptd 第8頁 200419742 五、發明說明(4) 散熱片1 4 0 ;以及(e )—球栅陣列1 5 0。 基板1 1 0具有一正面1 1 〇 3和一背面 1 1 0 a係預先劃分成一置晶區1 1 1和一散) 處須注意的一點是,於第2A圖及以下的 係以單一個方塊來表示,但其實際上可 所構成,包括一核心部、一拒銲罩幕層 複數個導電通孔、及其他的材料層、等 構件均無關於本發明之基本構想,因此 圖式中。此外,第2A至2C圖均為簡化之 示與本發明有關之元件,且所顯示之元 時之數目、形狀、及尺寸比例繪製;其 目、形狀、及尺寸比例可為一種隨意性 元件佈局形態可能更為複雜)。 本發明之第一實施例的特點在於基 置區1 1 2的表面上形成有複數個栓孔部-部1 1 2 a的上視結構形態例如為第2 β圖所 或為如第2C圖所示之多數呈矩陣排列之 1 1 〇散熱片接置區i i 2的栓孔部i i 2a分布 1 1 2a之剖面結構形狀則例如可分別為第 第5 C圖所顯示之方形、三角形、和半圓 槽以及多數槽孔等結構除形成於基板之 外’亦得形成於散熱片接置區1 j 2 (請名 )0 基板1 1 0上的置晶區1 1 1係用來以覆
110b,且其正面 無片接置區1 12(此 圖式中,基板1 1 0 能係由多項結構件 (solder mask)、 等;但由於此些結 並未明確地顯示於 示意圖式,其僅顯 件並非以實際實施 實際實施時之數 之設計選擇,且其 板1 1 0之散熱片接 .1 2 a,且此些栓孔 示之長條形溝槽’ 槽孔,以增加基板 ^而此些检孔部· 5A圖、第5B圖、和 形。惟該長條形溝 散熱片接置區1 1 2 ^閱第二實施例 晶方式(f 1 i P
17213.ptd 第9頁
200419742 至、《务明說明(5) ' - chip)安置該半導體晶片120。由於此處所採用之覆晶結構 為習知結構且無關於本發明之實質技術内容與範圍,因此 以下將不對其作進一步詳細之說明。當晶片i 2 〇安置於定 位後,便可將一膠黏劑塗佈於基板1丨0的散熱片接置區^丨 上而形成黏膠層1 3 0。於此塗佈過程中,膠黏劑會填入至< 該些栓孔部1 1 2 a之中。 散熱片1 40包括一高架部1 4 1和一支標部1 4 2,且其係 安置於該基板1 1 0的散熱片接置區1 1 2上;其安置方式為/將 支撐部1 4 2藉由黏膠層1 3 0而黏貼至基板1 1 〇的散熱片接置 • 1 1 2上,並使得其高架部1 4 1接觸至倒置之晶片i 2 〇的背 面(亦即a曰片1 2 0的非作用面)’例如為猎由一導熱性黏於 層1 2 1而黏貼至倒置之晶片1 2 0的背面,藉此使得晶片i 2 0 可透過散熱片1 4 0來進行散熱作用。 完成FCBGA封裝件的製造之後,由第2A圖可看出,黏 膠層1 3 0填入至基板1 1 〇之检孔部1 1 2 a的部分於固化之後會 形成一栓銷結構,因此可協助散熱片1 4 0抵抗橫向剪力。 此外’由於形成該些栓孔部1 1 2 a可增加基板1 1 0與黏膠層^ 1 3 0之間的接觸面積,因此可增加散熱片1 4 0與基板1 1 〇之· ^的黏結力’使得散熱片1 4 〇更為穩固而且牢靠地黏結於 爹板1 1 0上而不易脫落。 第二實施例(第3圖) ^ ^ 3圖即顯示本發明接置有散熱片之半導體封裝件之 第一貫施例的剖面結構形態。如圖所示,此半導體封裝件 例如為一 FCBGA封裝件,其組成構件至少包含“a)一基板
17213. ptd 第10頁 200419742 五、發明說明(6) 2 1 0,其具有一正面2 1 0 a# 、背面210b,且其正面卜 預先劃分成一置晶區2 1 1和—f ,、止曲Z 1 , 畋熱片接置區2 1 2 ; ( b ) Φ 一半導體晶片220; (c) — I占膠· ’層 230, (d)— 散埶片 240, 其具有一高架部241和一支栲如 π…/1 mu ’ ’ I邰2 4 2 ;以及(e )一球柵陣列 2 5 0。 第二實施例與前述之第—每姑你丨尤n —占 ^ 丄 灵施例不同之處僅在於將栓 孔部(如標號242a所指之部分、抑你士、认此& L ^ 刀)改形成於散熱片2 4 0之支撐 部2 4 2的底面上。此些栓孔部24 2a的剖面結構形態可例如 分別為第6A圖、第6B圖、和第6C圖所示之方形、三角形和 半圓形。 ' 一 完成FCBGA封裝件的製造之後,由第3圖可看出,黏膠 層2 3 0填入至散熱片2 4 0之支撐部24 2上的栓孔部212a之中 的部分於固化之後會形成一栓銷結構,因此可協助散熱片 2 4 0抵抗柄向男力。此外,由於形成該些栓孔部2 4 2 a可增 加散熱片240之支撐部2 42與黏膠層2 3 0之間的接觸面積, 因此可增加散熱片240與基板210之間的黏結力,使得散熱 片24 0更穩固而且牢靠地黏結於基板210上而不易脫落。< 第三實施例(第4圖) # 第4圖即顯示本發明接置有散熱片之半導體封裝件之 第二貫施例的剖面結構形態。如圖所示,此半導體封裝件 例如為一 FCBGA封裝件,其組成構件至少包含:(a)一基板 310’其具有一正面310 a和一背面310b,且其正面310 a上 預先劃分成一置晶區3 Η和一散熱片接置區3丨2 ;(b )至少 一半導體晶片3 2 0 ; ( c )—黏膠層3 3 0 ; (d)—散熱片3 4 0,
17213.ptd 第11頁 200419742 主、發明說明(7) 其具有一咼架部341和一支撐部342;以n 3 5〇。 及(e )—球拇陣列 第三實施例與前述之二個實施例不 孔部(如標號3 1 2 a、3 4 2 a所指之部分)=之處僅在於將栓 的散熱片接置區3 1 2以及散熱片3 4 〇之*日^形成於基板3 1 0 上。 撑部342的底面 完成FCBG A封裝件的製造之後,由證 λ z, ^ , 傻 由弟4圖可看出,黏膠 層3 3 0填入至栓孔部312a、3 4 2a之中的部分於固化之後會 形成一栓銷結構,因此可協助散熱片34〇抵抗橫向剪力。 ,外’此些更為多數的栓孔部3丨2 a、3 4 2 a可較前述之二個 貫施例更為增加散熱片3 4 0與基板3 1 0之間的黏結力,使得 散熱片3 4 0極為穩固而且牢靠地黏結至基板2丨〇。 [總結] 。綜1言之’本發明提供了 一種新的半導體封裝技術, 其可用製/乍一種接置有散熱片之半導體封裝件,例如為一 F Cf G A封A件’且其特點在於形成栓孔部的位置可於基板 ^政熱^接置區、散熱片的支撐部的底面、或同時形成於 二政熱片接置區和散熱片的支撐部的底面,使得膠黏 t ί此些栓孔部内並且固化後能形成至少一栓銷結構 σ辦力2熱片抵抗橫向剪力。此外,由於形成此些栓孔部 可a力基板和散熱片與黏膠層之間的接觸面積,因此可以 2 ί ί f片與基板之間的黏結力,使得散熱片更穩固而且 牛m吉於基板上而不易脫落。 所述僅為本發明之較佳實施例而已,並非用以限
17213.ptd 第12頁 200419742 五、發明說明(8) 定本發明之實質技術内容的範圍。本發明之實質技術内容 係廣義地定義於下述之申請專利範圍中。若任何他人所完 成之技術實體或方法與下述之申請專利範圍所定義者為完 全相同、或是為一種等效之變更,均將被視為涵蓋於此專 利範圍之中。
17213. ptd 第13頁 200419742 圖式簡單說明 [圖式簡單說明 ] 第 1圖 (先前 技 術 )為- -剖面結; 構不意圖 ,其中顯示一 典 型 接 置有 散熱 片 之 FCBGA封裝件: 的咅U面結才 冓形態; 第 2 Α圖 為一 剖 面 結構 示意圖, 其 中 顯 示 本發明接置有 散 孰 片 之半 導體 封 裝 件之 第一實施 ]列 的 剖 面 結構形態; 第 2B圖 為一 上 視 結構 示意圖, 其 中 顯 示 本發明接置有 散 孰 Λ 片 之半 導體 封 裝 件所 採用之基 板 的 上 視 結構形態; 第 2C圖 為一 上 視 結構 不意圖’ 其 中 顯 示 本發明接置有 散 熱 片 之半 導體 封 裝 件所 採用之基 板 或 散 敎 片的另一種上 m 丨結 構 型態 y 第 3圖一 -剖面結構示意圖,其’ 中顯示本發明接置有散 孰 $ 片 之 半導 體封 裝 件 之第 二實施例 的 剖 面 結 構; 第 4圖- -剖面結構示意圖,其1 令顯示本發明接置有散 敎 片 之 半導 體封 裝 件 之第 三實施例 的 剖 面 結 構, 第 5 A至 5C圖 為 剖 面結 構不意圖 其 分 別 顯示本發明所 採 用 之 基板 上所 形 成 之栓 孔部的三 種 不 同 的 實施方式; 第 6 A至 6C圖 為 剖 面結 構示意圖 y 其 分 別 顯示本發明斯 採 用 之 散熱 片上 所 形 成之 栓孔部的 三 種 不 同 的實施方式A % 基板 10a 基 板 1 0的 正面 1 Ob 基板 1 0的 背 面 11 置 晶 區 12 散熱 片接 置 區 20 半 導 體 晶 片 30 黏膠 層 40 散 敎 4 片 41 南架 部 42 支 撐 部
17213. ptd 第14頁 200419742
圖式簡單說明 50 球栅陣列 110 基板 110a 基板1 1 0的正 面 1 10b 基板1 1 0的背面 111 置晶區 1 12 散熱片接置區 1 12a 栓孔部 120 半導體晶片 130 黏膠層 140 散熱片 141 高架部 142 支撐部 150 球栅陣列 210 基板 210a 基板21 0的正 面 210b 基板2 1 0的背面 211 置晶區 212 散熱片接置區 220 半導體晶片 230 黏膠層 240 散熱片 241 高架部 242 支撐部 2 4 2a 栓孔部 250 球栅陣列 310 基板 310a •基板3 1 0的正 面 310b 基板3 1 0的背面 311 置晶區 312 散熱片接置區 312a 栓孔部 320 半導體晶片 330 黏膠層- 340 散熱片 341 高架部 342 支撐部 3 4 2a 栓孔部 350 球柵陣列 17213. ptd 第15頁
Claims (1)
- 200419742 六、申請專利範圍 、.一半導體封裝件,其至少包含: 一基板,其具有一正面和一背面,且其正面係預 先劃分成一置晶區和一散熱片接置區,且其中該散熱 片接置區形成有複數個栓孔部; 至少一半導體晶片,其係安置於該基板的置晶區 上;一黏膠層,其係塗佈於該基板的散熱片接置區 上,且填入至該散熱片接置區上所形成的栓孔部;以 及 一散熱片,其具有一支撐部和一高架部,其中該 •支撐部係藉由該黏膠層而黏貼至該基板的散熱片接置 區上,並使得該高架部接觸至該半導體晶片,藉此而 使得該半導體晶片可透過該散熱片來進行散熱作用。 2 .如申請專利範圍第1項所述之半導體封裝件,其中該散 熱,片接置區上所形成的栓孔部的剖面形狀係大致為方 形。 3. 如申請專利範圍第1項所述之半導體封裝件,其中該散 熱片接置區上所形成的栓孔部為多數矩陣排列之槽 < 子L 。 -- 4. 如申請專利範圍第1項所述之半導體封裝件,其中該散 ®熱片接置區上所形成的栓孔部的剖面形狀係大致為三 角形。 5 .如申請專利範圍第1項所述之半導體封裝件,其中該散 熱片接置區上所形成的栓孔部的剖面形狀係大致為半 圓形。17213.ptd 第16頁 200419742 六、申請專利範圍 6 .如申請專利範圍第1項所述之半導體封裝件,其中該散 熱片的支撐部亦形成有複數個栓孔部於其面對該散熱 片接置區的表面上’且該黏膠層係填入至該散熱片的 支撐部上所形成之栓孔部之中。 7. —半導體封裝件,其至少包含: 一基板,其具有一正面和一背面,且其正面係預 先劃分成一置晶區和一散熱片接置區; 至少一半導體晶片,其係安置於該基板的置晶區 上; 一黏膠層,其係塗佈於該基板的散熱片接置區 上;以及 一散熱片,其具有一支撐部和一高架部,其中該 散熱片的支撐部亦形成有複數個栓孔部於其面對該散 熱片接置區的表面上,且該支撐部係藉由該黏膠層而 黏貼至該基板的散熱片接置區上,且該黏膠層係填入 至該散熱片的支撐部上所形成之栓孔部之中,並使得 該高架部接觸至該半導體晶片,藉此而使得該半導體< 晶片可透過該散熱片來進行散熱作用。 ' 8. 如申請專利範圍第7項所述之半導體封裝件,其中該散 熱片的支撐部上所形成之栓孔部的剖面形狀係大致為 方形。 9. 如申請專利範圍第7項所述之半導體封裝件,其中該散 熱片接置區上所形成的栓孔部為多數矩陣排列之槽 孑L °17213. ptd 第17頁 200419742 六、申請專利範圍 1 0 .如申請專利範圍第7項所述之半導體封裝件,其中該散 熱片的支撐部上所形成之栓孔部的剖面形狀係大致為 三角形。 1 1 .如申請專利範圍第7項所述之半導體封裝件,其中該散 熱片的支撐部上所形成之栓孔部的剖面形狀係大致為 半圓形。 1 2.如申請專利範圍第7項所述之半導體封裝件,其中該基 板的散熱片接置區上亦形成有複數個栓孔部,且該黏 膠層係填入至該散熱片接置區上所形成的栓孔部之 蠱中。17213.ptd 第18頁
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2003
- 2003-03-27 TW TW092106880A patent/TWI273680B/zh not_active IP Right Cessation
- 2003-05-13 US US10/437,557 patent/US6919630B2/en not_active Expired - Lifetime
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TWI578462B (zh) * | 2015-01-12 | 2017-04-11 | 旭宏科技有限公司 | 防沾黏散熱片 |
Also Published As
Publication number | Publication date |
---|---|
US6919630B2 (en) | 2005-07-19 |
TWI273680B (en) | 2007-02-11 |
US20040188831A1 (en) | 2004-09-30 |
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