TW200411726A - Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method - Google Patents

Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method Download PDF

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Publication number
TW200411726A
TW200411726A TW091138123A TW91138123A TW200411726A TW 200411726 A TW200411726 A TW 200411726A TW 091138123 A TW091138123 A TW 091138123A TW 91138123 A TW91138123 A TW 91138123A TW 200411726 A TW200411726 A TW 200411726A
Authority
TW
Taiwan
Prior art keywords
patent application
cleaning
item
silicon
scope
Prior art date
Application number
TW091138123A
Other languages
English (en)
Chinese (zh)
Other versions
TWI307524B (https=
Inventor
Chia-Tien Peng
Ming-Wei Sun
Original Assignee
Au Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Au Optronics Corp filed Critical Au Optronics Corp
Priority to TW091138123A priority Critical patent/TW200411726A/zh
Priority to US10/409,985 priority patent/US6992017B2/en
Publication of TW200411726A publication Critical patent/TW200411726A/zh
Application granted granted Critical
Publication of TWI307524B publication Critical patent/TWI307524B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

Landscapes

  • Thin Film Transistor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW091138123A 2002-12-31 2002-12-31 Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method TW200411726A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW091138123A TW200411726A (en) 2002-12-31 2002-12-31 Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method
US10/409,985 US6992017B2 (en) 2002-12-31 2003-04-08 Process for cleaning silicon surface and fabrication of thin film transistor by the process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091138123A TW200411726A (en) 2002-12-31 2002-12-31 Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method

Publications (2)

Publication Number Publication Date
TW200411726A true TW200411726A (en) 2004-07-01
TWI307524B TWI307524B (https=) 2009-03-11

Family

ID=32653943

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091138123A TW200411726A (en) 2002-12-31 2002-12-31 Method for cleaning silicon surface and method for producing thin film transistor using the cleaning method

Country Status (2)

Country Link
US (1) US6992017B2 (https=)
TW (1) TW200411726A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4162211B2 (ja) * 2002-09-05 2008-10-08 コバレントマテリアル株式会社 シリコンウエハの洗浄方法および洗浄されたシリコンウエハ
TW575926B (en) * 2002-11-28 2004-02-11 Au Optronics Corp Method of forming polysilicon layer and manufacturing method of polysilicon thin film transistor using the same
KR100570974B1 (ko) * 2003-06-25 2006-04-13 삼성에스디아이 주식회사 박막 트랜지스터
FR2864457B1 (fr) * 2003-12-31 2006-12-08 Commissariat Energie Atomique Procede de nettoyage par voie humide d'une surface notamment en un materiau de type silicium germanium.
TWI311213B (en) * 2004-12-24 2009-06-21 Au Optronics Corp Crystallizing method for forming poly-si films and thin film transistors using same
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
KR100875164B1 (ko) * 2007-06-26 2008-12-22 주식회사 동부하이텍 웨이퍼의 세정 방법
KR101469026B1 (ko) * 2007-12-11 2014-12-05 삼성디스플레이 주식회사 표시 장치 및 그 표시판의 제조 방법
US8492288B2 (en) * 2008-06-10 2013-07-23 Micron Technology, Inc. Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates
CN106687868B (zh) 2014-09-18 2020-06-09 惠普印迪格公司 清洁硅光电导体
CN105789325B (zh) * 2016-04-18 2019-05-03 深圳市华星光电技术有限公司 薄膜晶体管、薄膜晶体管的制备方法及cmos器件
KR102738040B1 (ko) * 2019-07-12 2024-12-06 삼성디스플레이 주식회사 박막트랜지스터와 그것을 구비한 디스플레이 장치 및 그들의 제조방법
KR102865108B1 (ko) * 2020-12-18 2025-09-26 삼성디스플레이 주식회사 다결정 실리콘층의 제조 방법, 표시 장치 및 표시 장치의 제조 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1239706A (en) * 1984-11-26 1988-07-26 Hisao Hayashi Method of forming a thin semiconductor film
US5346833A (en) * 1993-04-05 1994-09-13 Industrial Technology Research Institute Simplified method of making active matrix liquid crystal display
US5656097A (en) * 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
JP3351924B2 (ja) * 1995-01-06 2002-12-03 忠弘 大見 洗浄方法
US6240933B1 (en) 1997-05-09 2001-06-05 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6348157B1 (en) 1997-06-13 2002-02-19 Tadahiro Ohmi Cleaning method
US6332835B1 (en) * 1997-11-20 2001-12-25 Canon Kabushiki Kaisha Polishing apparatus with transfer arm for moving polished object without drying it
US6346505B1 (en) * 1998-01-16 2002-02-12 Kurita Water Industries, Ltd. Cleaning solution for electromaterials and method for using same
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW426874B (en) 1998-10-14 2001-03-21 United Microelectronics Corp Method for cleaning a semiconductor wafer
US6099662A (en) * 1999-02-11 2000-08-08 Taiwan Semiconductor Manufacturing Company Process for cleaning a semiconductor substrate after chemical-mechanical polishing
JP2001217428A (ja) 2000-01-25 2001-08-10 Samsung Electronics Co Ltd 低温多結晶シリコン形薄膜トランジスタ−及びその製造方法
JP3875456B2 (ja) * 2000-06-29 2007-01-31 株式会社東芝 洗浄方法および洗浄装置
TW464972B (en) 2000-07-18 2001-11-21 Taiwan Semiconductor Mfg Wafer cleaning process added with ozone
JP3893608B2 (ja) * 2000-09-21 2007-03-14 信越半導体株式会社 アニールウェーハの製造方法
TW478062B (en) * 2000-12-05 2002-03-01 Nat Science Council A method of surface treatment on the improvement of electrical properties for doped SiO2 films
KR100653263B1 (ko) 2000-12-29 2006-12-01 엘지.필립스 엘시디 주식회사 실리콘막의 결정화 방법
JP2002261062A (ja) * 2001-03-05 2002-09-13 Texas Instr Japan Ltd 半導体ウェハ上の粒子を除去する方法及び装置
TWI220060B (en) * 2001-05-10 2004-08-01 Macronix Int Co Ltd Cleaning method of semiconductor wafer
TW575926B (en) 2002-11-28 2004-02-11 Au Optronics Corp Method of forming polysilicon layer and manufacturing method of polysilicon thin film transistor using the same

Also Published As

Publication number Publication date
TWI307524B (https=) 2009-03-11
US6992017B2 (en) 2006-01-31
US20040127032A1 (en) 2004-07-01

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