TW200410320A - An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication - Google Patents

An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication Download PDF

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Publication number
TW200410320A
TW200410320A TW91135615A TW91135615A TW200410320A TW 200410320 A TW200410320 A TW 200410320A TW 91135615 A TW91135615 A TW 91135615A TW 91135615 A TW91135615 A TW 91135615A TW 200410320 A TW200410320 A TW 200410320A
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TW
Taiwan
Prior art keywords
junction
rta
layer
amorphous
amorphous silicon
Prior art date
Application number
TW91135615A
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English (en)
Chinese (zh)
Inventor
Tan-Fu Lei
Tzu-Yun Chang
Huang-Chun Wen
Original Assignee
Univ Nat Chiao Tung
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Publication date
Application filed by Univ Nat Chiao Tung filed Critical Univ Nat Chiao Tung
Priority to TW91135615A priority Critical patent/TW200410320A/zh
Priority to JP2003190893A priority patent/JP2004193550A/ja
Publication of TW200410320A publication Critical patent/TW200410320A/zh

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW91135615A 2002-12-10 2002-12-10 An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication TW200410320A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW91135615A TW200410320A (en) 2002-12-10 2002-12-10 An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication
JP2003190893A JP2004193550A (ja) 2002-12-10 2003-07-03 ナノサイズの極浅接合面の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW91135615A TW200410320A (en) 2002-12-10 2002-12-10 An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication

Publications (1)

Publication Number Publication Date
TW200410320A true TW200410320A (en) 2004-06-16

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TW91135615A TW200410320A (en) 2002-12-10 2002-12-10 An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication

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JP (1) JP2004193550A (ja)
TW (1) TW200410320A (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6164569B2 (ja) * 2013-10-15 2017-07-19 住友電気工業株式会社 熱電素子および熱電素子の製造方法

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Publication number Publication date
JP2004193550A (ja) 2004-07-08

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