TW200410320A - An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication - Google Patents
An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication Download PDFInfo
- Publication number
- TW200410320A TW200410320A TW91135615A TW91135615A TW200410320A TW 200410320 A TW200410320 A TW 200410320A TW 91135615 A TW91135615 A TW 91135615A TW 91135615 A TW91135615 A TW 91135615A TW 200410320 A TW200410320 A TW 200410320A
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- Prior art keywords
- junction
- rta
- layer
- amorphous
- amorphous silicon
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91135615A TW200410320A (en) | 2002-12-10 | 2002-12-10 | An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication |
JP2003190893A JP2004193550A (ja) | 2002-12-10 | 2003-07-03 | ナノサイズの極浅接合面の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW91135615A TW200410320A (en) | 2002-12-10 | 2002-12-10 | An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200410320A true TW200410320A (en) | 2004-06-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW91135615A TW200410320A (en) | 2002-12-10 | 2002-12-10 | An ultra-shallow junction formation by amorphous silicon/silicon dioxide stacked structure for nano MOS device fabrication |
Country Status (2)
Country | Link |
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JP (1) | JP2004193550A (ja) |
TW (1) | TW200410320A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6164569B2 (ja) * | 2013-10-15 | 2017-07-19 | 住友電気工業株式会社 | 熱電素子および熱電素子の製造方法 |
-
2002
- 2002-12-10 TW TW91135615A patent/TW200410320A/zh unknown
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2003
- 2003-07-03 JP JP2003190893A patent/JP2004193550A/ja active Pending
Also Published As
Publication number | Publication date |
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JP2004193550A (ja) | 2004-07-08 |
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