TW200406916A - Variable inductor device, multi-layer substrate with hidden variable inductor device, semiconductor chip and chip-type variable inductor device - Google Patents

Variable inductor device, multi-layer substrate with hidden variable inductor device, semiconductor chip and chip-type variable inductor device Download PDF

Info

Publication number
TW200406916A
TW200406916A TW92124005A TW92124005A TW200406916A TW 200406916 A TW200406916 A TW 200406916A TW 92124005 A TW92124005 A TW 92124005A TW 92124005 A TW92124005 A TW 92124005A TW 200406916 A TW200406916 A TW 200406916A
Authority
TW
Taiwan
Prior art keywords
coil
multilayer substrate
inductance element
variable inductance
electrode
Prior art date
Application number
TW92124005A
Other languages
Chinese (zh)
Inventor
Masahiko Oshimura
Kouichirou Sagawa
Yuichi Ichikawa
Original Assignee
Ajinomoto Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ajinomoto Kk filed Critical Ajinomoto Kk
Publication of TW200406916A publication Critical patent/TW200406916A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

The subject of the present invention is to provide a variable inductor device, which can be formed in a multi-layer substrate through the same process to freely change the turn number of coil and formation direction in a compact size such that it is capable of freely adjusting the characteristic such as self-inductance. The variable inductor device is provided with the followings: a coil, which is integrally formed with the multi-layer substrate; the winding wire part parallel to the multi-layer substrate; the winding wire part perpendicular to the multi-layer part; the coil, in which the coil face of the formed unit winding wire is perpendicular to multi-layer substrate; the electrode portion, which is formed outside the multi-layer substrate and is respectively connected to more than two specific positions of the coil; the coil is supported inside the multi-layer substrate; and at least more than one electrode portion is disposed to extend to a position opposite to the face of at least one of the other electrode portion, which is separated by a gap.

Description

200406916 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於形成在多層基板內之電感元件，更詳細 爲關於形成在多層基板內，具有使用時可調整有效圈數的 線圈之可變電感元件、內藏該可變電感元件的多層基板、 積層有該多層基板之半導體晶片、及晶片型可變電感元 件。 【先前技術】 線圈類從很久以前便被使用在天線、馬達等廣泛之領 域中。在電子機器之領域中，使用線圈之稱爲電感器（電 感元件）的元件係當成單獨或者複合的電子零件，或者積 層在1C晶片的外面之元件等而被製造，廣泛的使用。該 種元件的形態有多種，例如只晶片化電感爲表面構裝用 者，則稱爲晶片電感器（晶片型電感元件），也有在1台 行動電話搭載20個以上之報告。內藏電感器之零件數目 很多，例如’組合電感器和電容器之稱爲積層1C濾波器 的零件，係以雜訊去除等之目的，於以高頻用途爲中心而 被廣爲使用。另外，稱爲 VC〇（Voltage Controlled Oscillator :電壓控制振盪器）之零件也具有組合電感器和 電容器之內部構造。VC0係可藉由施加電壓而改變振盪頻 率的振盪益’爲能左右無線電路的品質之重要零件。在假 定以近年爆發性普及的行動電話爲首的高頻區域的使用之 機器中，搭載多數的此種零件。伴隨電子機器小型輕量化 (2) (2)200406916 之進展，這些零件也被強烈要求小型化。另外’線圈之自 我電感、自我共振頻率等之特性，以在使用時可以調整較 爲合適。以實現小型的電感元件爲目的之構造，則有下述 的先前技術。 在日本專利特開平4- 2 3 7 1 06號公報（在日本申請’ 平成4年8月25日公開），記載有積體化電感元件。此 積體化電感元件係藉由在基板上交互積層絕緣膜和金屬膜 而形成，線圈的中心軸爲在平行於基板的方向。但是’在 此公報中，雖有記載：垂直於基板之方向的螺旋狀電路部 份係藉由通孔或者引洞而形成，但是關於更具體之製造方 法並無說明。另外，由於係線圈的圈數在使用時無法自由 調整的構造，所以無法使自我電感等之特性在使用時調整 爲期望之値。 另外，在日本專利特開平1 0-2849 1 9號公報（在曰本 申請，平成10年10月23日公開）中，在與基板平面垂 直之方向形成線圈的方法被提出。但是，在此方法中，爲 單層線圈之故，無法期待可獲得足夠的電感，另外，爲線 圈的圈數在使用時無法自由調整之構造故，所以無法使自 我電感等之特性在使用時調整爲期望之値。 另外，在日本專利特開平1 0- 1 89339號公報（在日本 申請，平成1 〇年7月21日公開）中，記載有由形成在半 導體基板上的絕緣層之半圓柱形上的溝，及形成在此溝狀 的圓柱形上的絕緣體，及形成在此絕緣體和溝之間的下部 導電線及形成在上述絕緣體上的上部導電線所形成的彈簧 -6 - (3) (3)200406916 狀的電感器。但是，在此構造中’爲單層線圈之故，無法 期待可獲得足夠的電感’另外’爲線圈的圈數在使用時無 法自由調整之構造故，所以無法使自我電感等之特性在使 用時調整爲期望之値。 本發明係有鑑於上述問題點而完成者’目的在於提 供：形成於多層基板內’以同一製程可以自由變更線圈的 圈數及形成方向，小型，使用時作用爲可自由調整自我電 感等的特性之電感的可變電感元件。另外，目的在於提 供：內藏該種可變電感兀件之多層基板及晶片型兀件’及 在外面積層該可變電感元件之半導體晶片。 【發明內容】 上述課題係藉由具有以下特徵的本發明所達成。申請 專利範圍第1項所記載的發明，係具有：與多層基板形成 爲一體的線圈，包含平行於該多層基板之捲線部份以及垂 直於該多層基板之捲線部份，該單位捲線形成之線圈面爲 垂直於多層基板之線圈；及形成在該多層基板上，及分別 連接在該線圈的特定處所之2個以上的電極部，該線圈係 被支持於該多層基板內，以及至少1個之該電極部設置爲 延伸至與形成在該多層基板的相同側之外面上的其他電極 部的至少其中之一隔著間隙而相面對的位置。 申請專利範圍第2項所記載之發明，其特徵爲：設置 延伸至與其他電極部的至少其中之一隔著間隙而相面對的 位置之1個該電極部係延伸設置在與該線圈的中心軸平行 -7- (4) (4)200406916 的方向’與該電極部相面對的電極部係配置在該電極部的 單側。 申請專利範圍第3項記載之發明，其特徵爲：設置延 伸至與其他電極部的至少其中之一隔著間隙而相面對的位 置之1個該電極部係延伸設置在與該線圈的中心軸平行的 方向，與該電極部相面對的電極部係形成有2個以上，而 且，就線圈的中心軸交互形成在該電極部的兩側之各側。 申請專利範圍第4項記載之發明，其特徵爲：在申請 專利範圍第1項記載之發明的特徵外，該電極部的至少其 一*係連接在該線圈的末端。 申請專利範圍第5項記載之發明，其特徵爲具有：與 多層基板形成爲一體的線圈，包含平行於該多層基板的捲 線部份以及垂直於該多層基板的捲線部份，該單位捲線所 形成之線圈面係垂直於該多層基板的線圈；及形成在多層 基板上，分別連接在該線圈的特定處所之3個以上的電極 部，該線圈係被支持於該多層基板內，該電極部形成在該 多層基板的相同側之外面上，以及該電極部係就該線圈的 中心軸交互形成在該線圈的兩側之線圈末端附近之其中一 側。 申請專利範圍第6項記載之發明，其特徵爲具有：與 多層基板形成爲一體的線圈，包含平行於該多層基板的捲 線部份以及垂直於該多層基板的捲線部份，該單位捲線所 形成之線圈面係垂直於該多層基板的線圈；及形成在多層 基板之一側的外面上，以及分別連接在該線圈的特定處所 (5) (5)200406916 之2個以上的電極部；及形成在多層基板的另一側的外面 上，以及分別連接在該線圈的特定處所之電極部，形成在 該多層基板的一側之外面上的該電極部，其中至少1個係 設置爲延伸至與其中的其他電極部的至少其一隔著間隙相 面對的位置。 申請專利範圍第7項記載之發明，其特徵爲：在申請 專利範圍第6項記載之發明外，形成在該多層基板的另一 側之外面上的該電極部係3個以上，以及就該線圈的中心 軸交互形成在該線圈的兩側之線圈末端附近的其中一側。 申請專利範圍第8項記載之發明，係在申請專利範圍 第1項至第4項、第6項或者第7項所記載之發明的特徵 外，該相面對的電極部彼此係藉由導體相連接，因此，該 電極部彼此可藉由修整而隔開。 申請專利範圍第9項記載之發明，其特徵爲··在申請 專利範圍第1項至第4項、第6項、以及第7項中任一項 所記載之發明的特徵外，該線圈的單位捲線係分別具有由 與鄰接的其他單位捲線相同方向來看時，在相互相反方向 旋轉的螺旋狀圖案，相互鄰接的該單位捲線組在該螺旋狀 圖案的前端間或末端間係相互連接。 申請專利範圍第1 0項記載之發明，其特徵爲：在申 請專利範圍第1項至第4項、第6項、以及第7項中任一 項所記載之發明的特徵外，另外具有由貫穿該線圈的內部 之磁性體所形成的中心構造。 申請專利範圍第1 1項記載之發明，其特徵爲：在申 -9 - (6) (6)200406916 請專利範圍第1項至第4項、第6項、以及第7項中任一 項所記載之發明的特徵外，另外具有一種與該多層基板形 成爲一體的電容器，爲與可變電感元件導電連接的電容 器。 申請專利範圍第1 2項記載之發明，其特徵爲具有： 申請專利範圍第1項至第4項、第6項、以及第7項中任 一項所記載之可變電感元件，及該多層基板，以及在該多 層基板上或者其內部支持其他電路。 申請專利範圍第1 3項記載之發明，其特徵爲：申請 專利範圍第1 2項記載之可變電感元件內藏多層基板係積 層在外面。 申請專利範圍第1 4項記載之發明，其特徵爲具有： 申請專利範圍第1項至第4項、第6項、以及第7項中任 一項所記載之可變電感元件，及該多層基板，以及該多層 基板係可以支持該可變電感元件之平板。 【實施方式】 以下，一面參考圖面一面說明本發明之實施形態。此 後說明關於本發明之第1實施形態的可變電感元件1 0的 構造。第1(a)圖係表示可變電感元件10的構造斜視圖。 可變電感元件1 0係由線圈10a、電極部1 0d以及電極部 l〇e所構成。線圈l〇a係在多層基板l〇c之多數的絕緣層 形成步驟中，賦予包含當成形成在絕緣層間的導電層的一 部份而形成的部份之電感的構造要素，中心軸平行於多層 -10- (7) (7)200406916 基板，其之單位捲線1 〇b所形成的線圈面係垂直多層基 板，以及包含平行於多層基板的捲線部份和垂直於該多層 基板的捲線部份。線圈1 〇a係投射形狀爲四角形等之導線 重複的圖案之單位捲線1 Ob以分別導電串聯連續連接之形 態所構成。本說明書之線圈1 〇 a以及其之單位捲線1 〇 b的 形態係設爲廣泛包含賦予電感之任何形態。理想上，平行 線圈1 0a的多層基板1 0c之捲線部份係形成爲所積層的導 電層的一部份，垂直多層基板1 0c之捲線部份係形成爲連 接隔著絕緣層而鄰接之導電層間的凸塊、引洞或者通孔 (塡充其中的導體）等。藉由如此形成線圈1 〇a，可以利 用堆積（build up )工法等周知的多層基板製造技術，在 多層基板的製造工程中，同時在多層基板內形成線圈 1 0 a。線圈1 0 a的末端係朝向多層基板1 0 c的長度方向延 伸，可與多層基板l〇c內的其他電路連接。多層基板l〇c 係積層絕緣層而構成的基板。圖中，多層基板1 0 c的輪廓 線以虛線表示，係表示多層基板1 〇c也可擴展在含線圈 10a的區域以外。另外，在實際的多層基板l〇c的形成步 驟中，絕緣層和導電層爲交互積層。而且，導電層的一部 份成爲上述的線圈1 〇a的一部份，其他的絕緣層則成爲多 層基板10c。電極部10d以及l〇e係形成在多層基板i〇c 的一側的外面上。第1 ( b )圖係顯示可變電感元件1 0的 電極部10d以及10e的構造圖。電極部l〇d以及l〇e係連 接在線圈1 〇a的特定處所。如此，電極部1 0d以及1 〇e形 成在多層基板l〇c的外面之故，透過此，可由多層基板 -11 - (8) (8)200406916 1 0c的外部簡單進行對於可變電感元件1 0的配線。特別是 電極部10e以使用分接頭（tap )爲佳。令物，電極部l〇d 係設置爲延伸至與電極部1 〇e隔著間隙（第1 ( b )圖中， 表示爲「間隙」之部份）而相面對的位置。即至少1個電 極部（電極部1 〇d )係設置爲延伸至形成在多層基板的相 同側之外面上的其他電極部（電極部〇6)的至少其一隔 著間隙而相面對的位置。此處，電極部1 〇d係沿著與電極 部1 0e排列於多層基板1 0c之長度方向的行成平行之鄰接 行而配置。即電極部1 0d以延伸設置於與線圈的中心軸平 行之方向爲適當，與電極部1 0d相面對的電極部1 0e係配 置在電極部1 0d的單側。另外，電極部1 0e彼此雖留有比 較大之距離而配置，但是電極部1 〇e和電極部1 0d係相接 近配置，電極部1 〇e和電極部1 Od之間的間隙以筆電極部 1 0e彼此之間的間隙小爲適當。藉由做成此種構造，可以 銲線、焊錫等跨接電極部1 Od和電極部1 0e (之其一）。 在第1 ( a )圖以及第1 ( b )圖中，銲線1 Of係跨接電極 部1 Od和右側的電極部1 〇e之間。藉由此銲線的跨接，線 圈1 0 a的被跨接電極部間的捲線被短路之故，在使用時可 以自由獲得與使線圈1 0a之圈數減少相同的效果。藉此’ 在使用時可以自由變更可變電感元件1 0的圈數，在使用 時可以自由調整自我電感等之特性。與後述的可變電感元 件20比較，可變電感元件1 〇具有藉由跨接其中1組的電 極部，可以自由變更圈數的優點。另外，銲線1 Of不是可 變電感元件1 〇的構成要素，因應需要，使用者在使用時 -12- (9) (9)200406916 可以予以安裝。電極部l〇d以及l〇e係以做成平台 (1 a n d )等形態之導體構成。另外，可變電感元件1 〇並 非意指在線圈10a和電極部l〇d以及加上多層基板 10c之整體，而是意指以由保持在多層基板10c內爲特徵 的線圈1 0a和電極部1 〇d以及1 0e所構成的電感元件（除 了可變電感元件80以及81，以下同）。另外，可變電感 兀件1 0的線圈，其中心線雖爲直線’但是中心線也可爲 曲線。那時，曲線可爲封閉曲線，在此情形下，則線圈成 爲環形。 接著，說明關於本發明之第2實施形態的可變電感元 件2 0。第2 ( a )圖係顯示可變電感元件2 0的構造斜視 圖。可變電感元件20雖與可變電感元件1 0具有幾乎相同 的構造，但是，不同點爲，配置在多層基板20c的相同側 的外面上的電極部只有同一形狀的電極部20e。第2 ( b ) 圖係顯示可變電感元件20的電極部20e的構造圖。電極 部20e係連接在線圏20a的特定處所。如此，電極部20e 形成在多層基板20c的外面之故，透過此，可以簡單由多 層基板20c的外部進行對於可變電感元件20的配線。另 外，其中一個電極部20e係設置爲延伸至與其他的電極部 20e隔著間隙（第2 ( b )圖中，表示爲「間隙」的部份） 相面對的位置。即至少1個電極部（1個電極部20e )係 設置爲延伸至形成在多層基板的相同側之外面上的其他電 極部（1個電極部20e )的至少其一隔著間隙而相面對的 位置。此處，電極部20e係排列配置於多層基板20c之長 -13- (10) (10)200406916 度方向的相同行中。另外，電極部2 0 e彼此相接近配置’ 其間隙筆電極部.20e的寬度（平行於多層基板20c的長度 方向的邊之長度·）小。藉由採取此種構造，可以銲線等跨 接電極部20e彼此。在第2 ( a )圖以及第2 ( b )圖中’ 銲線20f係跨接電極部之間。藉由此銲線的跨接’線圈 20a的被跨接之電極部間的捲線被短路之故，在使用時可 以自由獲得與使線圈1 Oa之圈數減少相同的效果。藉此’ 在使用時可以自由變更可變電感元件20的圈數’在使用 時可以自由調整自我電感等之特性。在與上述的可變電感 元件10之比較中，可變電感元件20係電極部20e排列配 置在1行之故，具有可使電極部20e的佔有面積變小的優 點。另外，銲線20f不是可變電感元件20的構成要素， 因應需要，使用者在使用時可以予以安裝。電極部20e係 以做成平台等形態之導體構成。可變電感元件20的構成 要素20a〜20c係對應在可變電感元件10中，將符號的數 字部份由10更替爲20之構成要素。 接著，說明關於本發明之第3實施形態的可變電感元 件30之構造。第3 ( a )圖係顯示可變電感元件30的構造 斜視圖。可變電感元件30雖與可變電感元件1 〇具有幾乎 相同的構造，但是代替相面對的電極部1 0d以及1 〇e，以 其相面對的電極部10d和10e係藉由導體（平台）而連接 成爲一體之形態的電極部30e爲構成要素，此點不同。第 3 ( b )係顯示可變電感元件30的電極部30e的構造圖。 藉由採取此種構造，與電極部30e在特定處所連接的線圈 -14- (11) (11)200406916 3〇a，與電極部30e連接之處所間成爲短路，而且，如第3 (c )圖所示般，藉由修整，分開連接在線圈30a的不同 處所之電極部3 0e的區域彼此，可以解除短路。如此，在 使用時，藉由修整電極部30e而予以分開，在使用時可自 由調整線圈30a之有效圈數，在使用時，可自由調整可變 電感元件30的自我電感等之特性。第3 ( d )圖係顯示電 極部30e的其他構造圖。此電極部30e係形成爲藉由導體 將可變電感元件1 0的電極部1 0e連接爲一體的構造。連 接電極部1 0e的導體之寬度，係如第3 ( d )圖所示般，如 比電極部30e的寬度窄時，修整變得簡單，雖然較爲合 適，但是也可爲相同寬度。藉由採取此種構造，與第3 (c )圖所示的相同，藉由修整，可分開連接在線圈30a 的不同處所之電極部3 0 c的區域彼此以解除短路。 接著，說明關於本發明之第4實施形態的可變電感元 件40之構造。第4 ( a )圖係顯示可變電感元件40的構造 斜視圖。可變電感元件40雖與可變電感元件1 0具有幾乎 相同的構造，但是，線圈的單位捲線40a分別具有由與相 同線圈的鄰接之其他單位捲線相同方向觀看時，於相反方 向旋轉之螺旋狀的圖案，以及相互鄰接之單位捲線組在該 螺旋狀圖案之前端間或者末端間爲交互連接（稱此構造的 線圈爲多層線圈）。藉由將線圈40a做成此種構造，可使 單位捲線內的圈數大於1，而且，電流一流過線圈40a 時，全部的單位捲線產生相同方向的磁場之故，可使產生 的磁場變大，能夠使自我電感變大。另外，在將自我電感 -15- (12) (12)200406916 的大小維持爲相同程度的條件下，可以更小型地構成可變 電感元件40。 關於電極部的構造之代替的實施形態’於第4 ( b ) 圖顯示可變電感元件4 1。可變電感元件4 1雖具有與可變 電感元件40幾乎相同的構造，但是，電極部41e具有與 第3實施形態之可變電感元件3 0的電極部3 0e相同構 造，此點不同。此實施形態係具有第3實施形態以及第4 實施形態之兩方的特徵。 接著，說明關於本發明之第5實施形態的可變電感元 件5 0之構造。第5 ( a )圖係顯示可變電感元件5 0的構造 斜視圖。可變電感元件50雖與可變電感元件10具有幾乎 相同的構造，但是不同點爲，在線圈50a的內部具有由磁 性體5 0 g所形成的中心構造。可變電感元件5 0的構成要 素5 0 a〜5 0 e係對應在可變電感元件1 〇中，將符號的數字 部份由10更替爲5 0之構成要素。如此，在線圈1 〇a的內 部配置磁性體5 0 g之故，具有可使自我電感變高的優點。 另外，磁性體5 0 g的中心構造雖可如第5 ( a )圖所示之兩 端開放的棒狀構造，但是也可以爲兩端間在線圈5 0 a的外 側連結之環狀（「口字形」）。另外，其也可以具有多數 的環狀部份。 關於線圈的構造之代替的實施形態，於第5 ( b )圖 顯不可變電感元件51。可變電感元件51雖與可變電感元 件50具有幾乎相同的構造，但是，線圈5丨a係具有與第4 實施形態之可變電感元件40的線圈4〇a相同之多層線圈 -16· (13) (13)200406916 的構造，此點不同。此實施形態具有第4實施形態以及第 5實施形態之兩方的特徵。 接著，說明關於本發明之第6實施形態的電感元件 60之構造。第6 ( a )圖係顯示電感元件60的構造斜視 圖。電感元件60係由線圈60a以及電極部60d，所構成。 電極部60d’係形成在多層基板60c的相同側的外面上。電 極部60(Γ爲形成在3個地方以上。其中2個係連接在線圈 的兩端。其他的電極部60d’則連接在線圈60a的兩端以外 的特定處所。另外，電極部60d ’係就該線圈的中心軸而交 互形成在線圈60a的兩側之線圈末端附近的其中一側 。 所謂線區末端係指線圈60a的線圈面內之兩端的位置。電 感元件60的構成要素60a〜60c係對應在可變電感元件1〇 中’將符號的數字部份由10更替爲60之構成要素。如 此’電極部60d’係交互形成之故，可使彼等之間的距離分 開’得以提升生產性，另外，可以焊錫在電極部60d容易 連接導線，不易發生錯誤連接。另外，連接在線圈60a的 末端以外的電極部60d可當成分接頭使用。 關於電極部的構造之代替的實施形態，於第6(b) 圖顯示可變電感元件61。可變電感元件61雖與電感元件 60具有幾乎相同的構造，但是在形成電極部6 1 d ’之外面 的其他外面上形成電極部6 1 d以及電極部6 U，此點係不 同。電極部6 1 e以及電極部6 1 e係分別與可變電感元件1 〇 的電極部1 〇e以及電極部1 〇e有相同構造。此實施形態係 具有第1實施形態以及第6實施形態之兩方的特徵。 •17- 4 (14) 4 (14)200406916 接著，說明關於本發明之第7實施形態的可變電感元 件70之構造。第7圖係顯示可變電感元件70的構造斜視 圖。'可變電感元件7 0雖與可變電感元件1 0具有幾乎相同 一 的構造，但是不同點爲，另外具有連接在線圈70a的特定_ 處所之電容器、連接部70i。電容器70h係由相面對 的2片極板，和由其等所夾住的介電體所構成。另外，在 需要更增加電容器的容量時’電容器7 〇h也可由使用在一 般的積層電容器之相對的梳子形之電極所形成的極板，和 夾於其間的多層的介電體所構成。極板最好是在多層基板 的多數絕緣層以及導電層的個別形成步驟中，當成導電層 的一部份而形成。介電體可爲與構成多層基板7〇c之絕緣 材料相同之材質，另外，考慮介電常數、費用、製造工程 等，也可爲與構成多層基板7〇c的絕緣材料爲不同的材 質。第7圖中，雖在線圈70a的內部配置電容器70h，當 然也可在線圈70a的外部配置電容器7〇h。在線圈的內部 配置電容器的構造中，具有可提升積體度，容易使整體厚 度變薄之優點。另外，可使單位捲線（)的磁場鏈接 之面積變大，具有可提高可變電感元件7〇的自我電感之 優點。另一方面，在線圈的外部配置電谷益之構造中’可 使藉由積層以形成線圈部份時的工程單純，另外，具有可 以選擇更大極板面積的電容器之優點。另外，具有藉由修 整電容器的極板，也可以爲調整靜電容量之優點。第7圖 中，線圈70a雖係單層的線圈，但是其可爲可變電感元件 40所具有的多層線圈之形態。連接部7(H係導電連接線圈 -18- (15) (15)200406916 7 0 a的特定處所和極板之接點。.在此例中，電容器7 0 h係 連接在線圈70a的兩方末端之間，構成LC並聯共振電 路。其他，藉由由線圈70a的一方的末端進而串聯連接電 容器70h，可以構成LC串聯共振電路。另外，也可考慮 連接線圈的中間部（對應分接頭）和電容器的構造。可變 電感元件70雖含單數的電容器，但也可包含多數的電容 器，那時的電容器和線圈的連接可組合串聯或者並聯。那 時，也可將電容器連接在線圈的中間部。可變電感元件 70的構成要素70a〜70d係對應在可變電感元件10中，將 符號的數字部份由1 〇更替爲70之構成要素。 接著，說明關於本發明之第8實施形態的可變電感元 件80之構造。第8 ( a )圖係顯示可變電感元件80的構造 斜視圖。可變電感元件80雖與可變電感元件1 0具有幾乎 相同的構造，但是不同點爲：將保持線圈之多層基板80c 當成構成要素，以及電極部80d’形成在形成有電極部80d 以及電極部80e之外面的其他外面。多層基板80c具有保 持線圈80a之足夠的體積。此可變電感元件80與不將多 層基板當成構成要素的其他可變電感元件比較時，不同處 爲可以當成獨立的單體元件使用，例如，可以當成晶片型 電感器等之晶片型電感元件使用。此處，在將可變電感元 件80安裝於其他基板上時，係將形成電極部80d’的面設 爲下面而予以安裝，可透過電極部80d’而與其他基板上的 電路連接。如此，如將可變電感元件80安裝於其他基板 上，則電極部80d以及電極部80e出現在上面之故，可以 -19- (16) (16)200406916 跨接彼等而在使用時調節線圈的圈數。另外，保持在多層 基板8Oc的電路元件之部份可與此實施形態的其他實施形 態之可變電感元件的電路元件相互置換。可變電感元件 80的構成要素80a〜80e係對應在可變電感元件10中，將 符號的數字部份由1 0更替爲80之構成要素。 關於電極部的構造之替代實施形態，於第8 ( b )圖 顯示可變電感元件8 1。可變電感元件8 1雖與可變電感元 件80具有幾乎相同的構造，但是不同點爲：電極部80d’ 爲3個以上（此處，爲3個），就線圈81 a的中心軸交互 形成（鋸齒狀排列）於線圈8 1 a之兩側的線圈末端附近的 其中一側。此實施形態係具有第6實施形態以及第8實施 形態之兩方的特徵。 接著，說明具體之構造以及具有電感特性的本發明之 實施例。首先，說明關於本發明之實施例1的可變電感元 件90之構造。此實施例1係本發明之第1實施形態的具 體構造之一例。第9 ( a )圖係關於本發明之實施例1的 可變電感元件90之線圈的平面圖，第9 ( b )圖係其之A-A視圖橫剖面圖。可變電感元件90係由：由單位捲線 9〇b(圖中，對於1個單位捲線賦予參考符號爲代表）形成 的線圈90a、電極部90d(圖中，也記載爲「調整用表面電 極」）、電極部90d’、以及電極部90e所構成。電極部90e 係對應由Step 1至Step之6地方的相對部而形成6個。圖 中，將其區別爲電極部90e(Stepl)至電極部90e(Step6)。 藉由跨接對應其一的S t e p之電極部9 0 e和與其透過間隙 -20· (17) 200406916 而相對的電極部90d，則可對於對應該其一之Step的電感 調整可變電感元件。200406916 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to an inductance element formed in a multilayer substrate, and more specifically to a coil formed in the multilayer substrate and having a coil capable of adjusting an effective number of turns during use. A variable inductance element, a multilayer substrate in which the variable inductance element is built, a semiconductor wafer in which the multilayer substrate is laminated, and a wafer-type variable inductance element. [Prior art] Coils have been used in a wide range of fields such as antennas and motors for a long time. In the field of electronic equipment, components called inductors (inductive elements) using coils are manufactured as separate or composite electronic parts, or components laminated on the outside of 1C chips, and are widely used. There are many types of these components. For example, only chip inductors are used for surface mounting, they are called chip inductors (chip inductors). There are also reports that more than 20 devices are mounted on a single mobile phone. There are many parts with built-in inductors. For example, parts called 'multilayer 1C filters' that combine inductors and capacitors are widely used for high-frequency applications, mainly for noise removal purposes. In addition, the part called VC〇 (Voltage Controlled Oscillator) also has an internal structure of a combined inductor and capacitor. VC0 is an oscillation component that can change the oscillation frequency by applying a voltage. It is an important part that can affect the quality of wireless circuits. Many of these devices are installed in devices that are supposed to be used in high-frequency areas, including mobile phones, which have been exploding in recent years. With the progress of miniaturization and weight reduction of electronic equipment (2) (2) 200406916, miniaturization of these parts is also strongly demanded. In addition, the characteristics of the coil's self-inductance and self-resonant frequency can be adjusted during use. The structure for realizing a small inductive element has the following prior art. Japanese Patent Application Laid-Open No. 4- 2 3 7 1 06 (published in the Japanese application 'August 25, 2004) describes an integrated inductor element. The integrated inductor element is formed by alternately laminating an insulating film and a metal film on a substrate, and the center axis of the coil is in a direction parallel to the substrate. However, in this publication, although it is described that the spiral circuit portion in a direction perpendicular to the substrate is formed by a through hole or a through hole, there is no description of a more specific manufacturing method. In addition, because the number of turns of the system coil cannot be freely adjusted during use, the characteristics such as self-inductance cannot be adjusted to the desired value during use. In addition, in Japanese Patent Laid-Open No. 10-2849 19 (Japanese application, published on October 23, 2010), a method of forming a coil in a direction perpendicular to a substrate plane has been proposed. However, in this method, a single-layer coil cannot be expected to obtain sufficient inductance, and because the number of turns of the coil cannot be freely adjusted during use, characteristics such as self-inductance cannot be used during use. Adjusted to expectations. In addition, Japanese Patent Laid-Open No. 10-1 89339 (published in Japanese application, published on July 21, 2010) describes a groove formed by a semi-cylindrical shape of an insulating layer formed on a semiconductor substrate. And a spring formed by the groove-shaped cylinder, a lower conductive wire formed between the insulator and the groove, and a spring formed by the upper conductive wire formed on the insulator-6-(3) (3) 200406916 Shaped inductor. However, in this structure, 'a single-layer coil cannot be expected to obtain sufficient inductance.' In addition, because the number of turns of the coil cannot be freely adjusted during use, characteristics such as self-inductance cannot be used during use. Adjusted to expectations. The present invention has been made in view of the above-mentioned problems, and the object of the present invention is to provide: formed in a multi-layer substrate, the number of turns and the formation direction of a coil can be freely changed in the same process, and the characteristics are small, and the self-inductance can be freely adjusted during use. The variable inductance component of the inductor. In addition, the object is to provide a multi-layer substrate and a wafer-type element including the variable inductance element and a semiconductor wafer in which the variable inductance element is layered on the outer area. SUMMARY OF THE INVENTION The above-mentioned problems are achieved by the present invention having the following features. The invention described in item 1 of the patent application scope includes a coil formed integrally with a multilayer substrate, including a winding portion parallel to the multilayer substrate and a winding portion perpendicular to the multilayer substrate, and the coil formed by the unit winding A coil whose surface is perpendicular to the multilayer substrate; and two or more electrode portions formed on the multilayer substrate and respectively connected to specific places of the coil, the coil system being supported in the multilayer substrate, and at least one The electrode portion is provided so as to extend to a position facing at least one of the other electrode portions formed on the outer surface of the same side of the multilayer substrate through a gap. The invention described in item 2 of the scope of patent application is characterized in that one of the electrode portions extending to a position facing at least one of the other electrode portions through a gap is provided to extend from the coil portion. The central axis is parallel to the direction -7- (4) (4) 200406916. The electrode portion facing the electrode portion is arranged on one side of the electrode portion. The invention described in claim 3 is characterized in that one electrode portion extending to a position facing at least one of the other electrode portions across a gap is provided, and the electrode portion is extended to the center of the coil. In the direction parallel to the axis, two or more electrode portions are formed facing the electrode portion, and the central axis of the coil is alternately formed on each side of both sides of the electrode portion. The invention described in claim 4 of the scope of patent application is characterized in that, in addition to the features of the invention described in claim 1 of the scope of patent application, at least one * of the electrode portion is connected to the end of the coil. The invention described in claim 5 of the scope of patent application is characterized by having a coil formed integrally with the multilayer substrate, including a winding portion parallel to the multilayer substrate and a winding portion perpendicular to the multilayer substrate. The unit winding is formed by The coil surface is a coil perpendicular to the multilayer substrate; and three or more electrode portions formed on the multilayer substrate and connected to specific locations of the coil, respectively. The coil system is supported in the multilayer substrate, and the electrode portion is formed. On the outer surface of the same side of the multilayer substrate, and the electrode portions are alternately formed on one of the coils near the coil ends on both sides of the coil about the central axis of the coil. The invention described in claim 6 of the scope of the patent application is characterized by having a coil formed integrally with the multilayer substrate, including a winding portion parallel to the multilayer substrate and a winding portion perpendicular to the multilayer substrate. The unit winding is formed by the unit winding. The coil surface is a coil perpendicular to the multilayer substrate; and two or more electrode portions formed on an outer surface of one side of the multilayer substrate and connected to specific places (5) (5) 200406916 of the coil; and On the outer surface of the other side of the multilayer substrate, and electrode portions respectively connected to specific places of the coil, the electrode portions formed on the outer surface of one side of the multilayer substrate, at least one of which is provided to extend to and A position where at least one of the other electrode portions faces through a gap. The invention described in item 7 of the scope of patent application is characterized in that, in addition to the invention described in item 6 of the scope of patent application, three or more electrode portions are formed on the outer surface of the other side of the multilayer substrate, and The center axis of the coil is alternately formed on one of the sides of the coil near the ends of the coil. The invention described in item 8 of the scope of patent application is the feature of the invention described in items 1 to 4, 6 or 7 of the scope of patent application, and the facing electrode portions are connected to each other by a conductor. Are connected, so that the electrode portions can be separated from each other by trimming. The invention described in item 9 of the scope of patent application is characterized by the following: · In addition to the features of the invention described in any one of the scope of claims 1 to 4, 6, and 7, The unit winding lines have spiral patterns that rotate in opposite directions when viewed from the same direction as the adjacent unit winding lines, and the unit winding groups adjacent to each other are connected to each other between the ends or ends of the spiral pattern. The invention described in item 10 of the scope of the patent application is characterized in that in addition to the features of the invention described in any one of the scope of claims 1 to 4, 6, and 7, A central structure formed by a magnetic body penetrating inside the coil. The invention described in item 11 of the scope of patent application is characterized in that any of items 1 to 4, 6, and 7 of the scope of patent are requested in Shen-9-(6) (6) 200406916. In addition to the features of the described invention, a capacitor integrally formed with the multilayer substrate is a capacitor which is conductively connected to a variable inductance element. The invention described in item 12 of the scope of patent application is characterized by having the variable inductance element described in any one of the scope of claims 1 to 4, 6, and 7, and the invention. A multilayer substrate, and other circuits are supported on or within the multilayer substrate. The invention described in item 13 of the scope of patent application is characterized in that the variable inductance element described in item 12 of the scope of patent application has a multilayer substrate built-in on the outside. The invention described in item 14 of the scope of patent application is characterized by having the variable inductance element described in any one of the scope of claims 1 to 4, 6, and 7, and the invention. The multilayer substrate and the multilayer substrate are flat plates that can support the variable inductance element. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The structure of the variable inductance element 10 according to the first embodiment of the present invention will be described below. Fig. 1 (a) is a perspective view showing a structure of the variable inductance element 10. The variable inductance element 10 is composed of a coil 10a, an electrode portion 10d, and an electrode portion 10e. The coil 10a is a structural element that imparts inductance including a portion formed as a part of a conductive layer formed between insulating layers in most of the insulating layer forming steps of the multilayer substrate 10c, and the central axis is parallel to the multilayer -10- (7) (7) 200406916 substrate, the coil surface formed by the unit winding wire 10b is a vertical multilayer substrate, and includes a winding portion parallel to the multilayer substrate and a winding portion perpendicular to the multilayer substrate. The coil 10a is a unit coil 1 Ob in which a projected shape is a rectangular wire and the like is repeated. The unit coil 1 Ob is formed in a conductive and continuous series. The form of the coil 10a and the unit winding 10b of this specification is set to include any form that imparts inductance. Ideally, the coiled portion of the multilayer substrate 10c of the parallel coil 10a is formed as a part of the conductive layer of the stacked layer, and the coiled portion of the vertical multilayer substrate 10c is formed to connect adjacent conductive layers via an insulating layer. Bumps, lead holes or through holes (conductors filled in) between layers. By forming the coil 10a in this manner, a well-known multilayer substrate manufacturing technology such as a build-up method can be used to simultaneously form the coil 10a in the multilayer substrate during the manufacturing process of the multilayer substrate. The end of the coil 10a extends toward the longitudinal direction of the multilayer substrate 10c, and can be connected to other circuits in the multilayer substrate 10c. The multilayer substrate 10c is a substrate formed by laminating an insulating layer. In the figure, the outline of the multi-layer substrate 10 c is indicated by a dotted line, which indicates that the multi-layer substrate 10 c can also be expanded beyond the area including the coil 10a. In addition, in the step of forming the actual multilayer substrate 10c, the insulating layer and the conductive layer are alternately laminated. Further, a part of the conductive layer becomes a part of the coil 10a described above, and the other insulating layer becomes a multi-layer substrate 10c. The electrode portions 10d and 10e are formed on the outer surface of one side of the multilayer substrate ioc. Figure 1 (b) is a structural diagram showing the electrode portions 10d and 10e of the variable inductance element 10. The electrode portions 10d and 10e are connected to a specific place of the coil 10a. In this way, since the electrode portions 10d and 10e are formed on the outside of the multilayer substrate 10c, through this, the variable inductance element can be easily performed from the outside of the multilayer substrate-11-(8) (8) 200406916 1 0c. 10 wiring. In particular, it is preferable to use a tap for the electrode portion 10e. The object and the electrode part 10d are arranged so as to extend to face the electrode part 10e across the gap (the part shown as "gap" in Fig. 1 (b)). That is, at least one electrode portion (electrode portion 10d) is provided so as to extend to at least one of the other electrode portions (electrode portion 06) formed on the outer surface of the same side of the multi-layer substrate to face each other through a gap. position. Here, the electrode portions 10d are arranged along adjacent rows parallel to the rows in which the electrode portions 10e are arranged in the longitudinal direction of the multilayer substrate 10c. That is, it is appropriate that the electrode portion 10d extends in a direction parallel to the central axis of the coil, and the electrode portion 10e facing the electrode portion 10d is disposed on one side of the electrode portion 10d. In addition, although the electrode portions 10e are arranged at a relatively large distance from each other, the electrode portions 10e and 10d are arranged close to each other, and the gap between the electrode portions 10e and the electrode portions 10d is formed by a pen electrode. It is appropriate that the gap between the portions 10e is small. With such a structure, it is possible to bridge the electrode portion 10d and the electrode portion 10e (one of them) by a wire or a solder. In Figs. 1 (a) and 1 (b), the bonding wire 1 Of is connected between the jumper electrode portion 10d and the right electrode portion 10e. By this jumper bonding wire, the winding wire between the jumped electrode portions of the coil 10a is short-circuited, and the same effect as reducing the number of turns of the coil 10a can be obtained freely in use. Therefore, the number of turns of the variable inductance element 10 can be freely changed during use, and the characteristics such as self inductance can be freely adjusted during use. Compared with the variable inductance element 20 described later, the variable inductance element 10 has the advantage that the number of turns can be freely changed by connecting the electrode portions of one of the groups. In addition, the bonding wire 1 Of is not a constituent element of the variable inductance element 10, and can be installed by the user when needed -12- (9) (9) 200406916. The electrode portions 10d and 10e are made of a conductor formed into a platform (1 a n d) or the like. In addition, the variable inductance element 10 does not mean the whole of the coil 10a and the electrode portion 10d and the multilayer substrate 10c, but means the coil 10a and the electrode characterized by being held in the multilayer substrate 10c. Inductive elements composed of parts 10 d and 10 e (except for variable inductive elements 80 and 81, the same applies hereinafter). In addition, although the center line of the coil of the variable inductance element 10 is a straight line ', the center line may be a curved line. At that time, the curve could be a closed curve, in which case the coil becomes a loop. Next, the variable inductance element 20 according to the second embodiment of the present invention will be described. FIG. 2 (a) is a perspective view showing the structure of the variable inductance element 20. FIG. Although the variable inductance element 20 has almost the same structure as the variable inductance element 10, the difference is that the electrode portions arranged on the outer surface of the same side of the multilayer substrate 20c have only the electrode portions 20e of the same shape. FIG. 2 (b) is a structural diagram showing an electrode portion 20e of the variable inductance element 20. The electrode portion 20e is connected to a specific place of the coil 20a. As described above, since the electrode portion 20e is formed on the outside of the multilayer substrate 20c, through this, the wiring to the variable inductance element 20 can be easily performed from the outside of the multilayer substrate 20c. In addition, one of the electrode portions 20e is provided so as to extend to a position facing the other electrode portion 20e through a gap (a portion shown as a "gap" in Fig. 2 (b)). That is, at least one electrode portion (one electrode portion 20e) is provided so as to extend to at least one of the other electrode portions (one electrode portion 20e) formed on the outer surface of the same side of the multi-layer substrate to face each other with a gap therebetween. s position. Here, the electrode portions 20e are arranged in the same row in the length -13- (10) (10) 200406916 degree direction of the multilayer substrate 20c. The electrode portions 20e are arranged close to each other ', and the gap pen electrode portion .20e has a small width (length of a side parallel to the longitudinal direction of the multilayer substrate 20c ·). By adopting such a structure, a bonding wire or the like can be bridged between the electrode portions 20e. In Figs. 2 (a) and 2 (b), the 'bonding wire 20f is connected across the electrode portion. Since the wire wound between the bridged electrode portions of the coil 20a is short-circuited, the same effect as that of reducing the number of turns of the coil 10a can be obtained freely during use. Thereby, 'the number of turns of the variable inductance element 20 can be freely changed during use', and the characteristics such as self inductance can be freely adjusted during use. In comparison with the above-mentioned variable inductance element 10, the variable inductance element 20 has the electrode portions 20e arranged in one row, which has the advantage of reducing the occupied area of the electrode portions 20e. In addition, the bonding wire 20f is not a constituent element of the variable inductance element 20, and can be installed by a user when using the bonding wire 20f. The electrode portion 20e is constituted by a conductor formed into a platform or the like. The constituent elements 20a to 20c of the variable inductance element 20 correspond to the constituent elements of the variable inductance element 10 in which the numerical portion of the symbol is changed from 10 to 20. Next, the structure of the variable inductance element 30 according to the third embodiment of the present invention will be described. Fig. 3 (a) is a perspective view showing the structure of the variable inductance element 30. Although the variable inductance element 30 has almost the same structure as the variable inductance element 10, instead of the facing electrode portions 10d and 10e, the facing electrode portions 10d and 10e are connected by the facing electrode portions 10d and 10e. The electrode part 30e in the form of a conductor (platform) connected together as a constituent element is different in this respect. The third (b) is a structural diagram showing an electrode portion 30e of the variable inductance element 30. By adopting such a structure, the coil -14- (11) (11) 200406916 3〇a connected to the electrode portion 30e at a specific place becomes a short circuit between the place connected to the electrode portion 30e, and, as in Section 3 (c) As shown in the figure, by trimming, the regions of the electrode portions 30e connected to different places of the coil 30a are separated from each other, and the short circuit can be released. In this way, the electrode portion 30e is separated during use, and the effective number of turns of the coil 30a can be freely adjusted during use, and the self-inductance of the variable inductance element 30 can be freely adjusted during use. Figure 3 (d) is a diagram showing another structure of the electrode portion 30e. The electrode portion 30e has a structure in which the electrode portion 10e of the variable inductance element 10 is integrally connected by a conductor. The width of the conductor connected to the electrode portion 10e is as shown in Fig. 3 (d). If the width of the conductor connected to the electrode portion 10e is narrower than that of the electrode portion 30e, the trimming becomes simple. Although it is more suitable, it can be the same width. By adopting such a structure, similar to that shown in FIG. 3 (c), by trimming, the regions of the electrode portions 30c connected to different places of the coil 30a can be separated from each other to release the short circuit. Next, a structure of a variable inductance element 40 according to a fourth embodiment of the present invention will be described. Fig. 4 (a) is a perspective view showing the structure of the variable inductance element 40. Although the variable inductive element 40 has almost the same structure as the variable inductive element 10, the unit windings 40a of the coils each have a rotating direction in the opposite direction when viewed from the same direction as other unit windings adjacent to the same coil. The spiral pattern and the adjacent unit winding groups are interconnected between the ends or the ends of the spiral pattern (the coil of this structure is called a multilayer coil). With the structure of the coil 40a, the number of turns in a unit winding can be greater than 1, and when the current passes through the coil 40a, all unit windings generate a magnetic field in the same direction, which can increase the generated magnetic field. , Can make self inductance larger. In addition, the variable inductance element 40 can be made smaller in size while maintaining the size of the self-inductance -15- (12) (12) 200406916 to the same degree. The alternative embodiment of the structure of the electrode portion 'is shown in Fig. 4 (b). Although the variable inductance element 41 has a structure almost the same as that of the variable inductance element 40, the electrode portion 41e has the same structure as the electrode portion 30e of the variable inductance element 30 of the third embodiment. different. This embodiment has the characteristics of both the third embodiment and the fourth embodiment. Next, a structure of a variable inductance element 50 according to a fifth embodiment of the present invention will be described. Fig. 5 (a) is a perspective view showing a structure of the variable inductance element 50. Although the variable inductance element 50 has almost the same structure as the variable inductance element 10, the difference is that the coil 50a has a center structure formed of a magnetic body 50 g inside the coil 50a. The constituent elements 50 a to 50 e of the variable inductance element 50 correspond to the variable inductance element 10, and the numerical part of the symbol is changed from 10 to 50. As described above, since the magnetic body 50 g is disposed inside the coil 10a, there is an advantage that the self inductance can be increased. In addition, although the center structure of the magnetic body 50 g may be a rod-like structure with both ends open as shown in FIG. 5 (a), it may be a ring shape (" "Glyph"). Alternatively, it may have a plurality of ring portions. Regarding the alternative embodiment of the coil structure, the immutable inductance element 51 is shown in Fig. 5 (b). Although the variable inductance element 51 has almost the same structure as the variable inductance element 50, the coil 5a is a multilayer coil having the same coil as the coil 40a of the variable inductance element 40 of the fourth embodiment. The structure of 16 · (13) (13) 200406916 is different in this respect. This embodiment has characteristics of both the fourth embodiment and the fifth embodiment. Next, the structure of an inductance element 60 according to a sixth embodiment of the present invention will be described. Fig. 6 (a) is a perspective view showing the structure of the inductance element 60. The inductance element 60 includes a coil 60a and an electrode portion 60d. The electrode portion 60d 'is formed on the outer surface on the same side of the multilayer substrate 60c. The electrode portion 60 (Γ is formed in three or more places. Two of them are connected to both ends of the coil. The other electrode portions 60d 'are connected to a specific place other than both ends of the coil 60a. In addition, the electrode portion 60d' is The center axis of the coil is alternately formed on one of the sides near the coil ends on both sides of the coil 60a. The so-called end of the line area refers to the positions of the two ends in the coil surface of the coil 60a. Corresponding to the constituent element in the variable inductance element 10 where the number part of the symbol is changed from 10 to 60. In this way, the 'electrode part 60d' is formed interactively so that the distance between them can be separated. The productivity is improved, and solder can be easily connected to the lead wire at the electrode portion 60d, so that incorrect connection is unlikely to occur. In addition, the electrode portion 60d connected to the end of the coil 60a can be used as a component connector. Alternative embodiments of the structure of the electrode portion Fig. 6 (b) shows a variable inductance element 61. Although the variable inductance element 61 has almost the same structure as the inductance element 60, it is formed on the outer surface of the electrode portion 6 1 d '. The electrode part 6 1 d and the electrode part 6 U are formed on the outer surface, and this point is different. The electrode part 6 1 e and the electrode part 6 1 e are respectively the electrode part 10e and the electrode part 1 of the variable inductance element 10. 〇e has the same structure. This embodiment has the characteristics of both the first embodiment and the sixth embodiment. • 17-4 (14) 4 (14) 200406916 Next, the seventh embodiment of the present invention will be described. Structure of the variable inductance element 70. Fig. 7 is a perspective view showing the structure of the variable inductance element 70. 'Although the variable inductance element 70 has almost the same structure as the variable inductance element 10, The difference is that it also has a capacitor and a connecting portion 70i in a specific _ space connected to the coil 70a. The capacitor 70h is composed of two facing plates and a dielectric body sandwiched therebetween. In addition, When it is necessary to further increase the capacity of the capacitor, the capacitor 70 hrs can also be composed of an electrode plate formed by using opposed comb-shaped electrodes of a general multilayer capacitor, and a multilayer dielectric body sandwiched therebetween. Fortunately, most insulating layers and conductive layers of multilayer substrates In the individual formation steps, it is formed as a part of the conductive layer. The dielectric body may be the same material as the insulating material constituting the multilayer substrate 70c. In addition, considering the dielectric constant, cost, manufacturing process, etc., The material is different from the insulating material constituting the multilayer substrate 70c. Although the capacitor 70h is arranged inside the coil 70a in FIG. 7, it is of course possible to arrange the capacitor 70h outside the coil 70a. It is also arranged inside the coil The structure of the capacitor has the advantages of increasing the integration degree and making it easy to reduce the overall thickness. In addition, the area of the magnetic field link per unit winding () can be increased, and the self inductance of the variable inductance element 70 can be increased. Advantages. On the other hand, in the structure in which the electric valley benefit is arranged outside the coil, the process of forming the coil portion by stacking is simple, and in addition, there is an advantage that a capacitor having a larger plate area can be selected. In addition, there is an advantage that the capacitance of the capacitor can be adjusted by trimming the electrode plate of the capacitor. In Fig. 7, although the coil 70a is a single-layer coil, it may be in the form of a multilayer coil included in the variable inductance element 40. Connection part 7 (H-series conductive connection coil-18- (15) (15) 200406916 7 0 a specific place and the contact of the plate. In this example, the capacitor 70 h is connected to both sides of the coil 70a An LC parallel resonance circuit is formed between the ends. In addition, an LC series resonance circuit can be formed by connecting a capacitor 70h in series with one end of the coil 70a. In addition, it is also possible to consider connecting the middle part of the coil (corresponding to the tap) and Structure of the capacitor. Although the variable inductance element 70 includes a singular capacitor, it may include a large number of capacitors. At that time, the connection of the capacitor and the coil may be combined in series or parallel. At that time, the capacitor may be connected in the middle of the coil. The constituent elements 70a to 70d of the variable inductance element 70 correspond to the constituent elements of the variable inductance element 10 in which the numerical part of the symbol is changed from 10 to 70. Next, the eighth aspect of the present invention will be described. The structure of the variable inductance element 80 of the embodiment. Fig. 8 (a) is a perspective view showing the structure of the variable inductance element 80. Although the variable inductance element 80 has almost the same structure as the variable inductance element 10 Construct, but The same point is that the multilayer substrate 80c holding the coil is used as a constituent element, and the electrode portion 80d 'is formed on the other outer surface on which the electrode portion 80d and the electrode portion 80e are formed. The multilayer substrate 80c has a sufficient volume to hold the coil 80a. When the variable inductance element 80 is compared with other variable inductance elements that do not use the multilayer substrate as a component, the difference is that they can be used as independent single elements. For example, the variable inductance element 80 can be used as a chip type inductor such as a chip type inductor. Use. Here, when the variable inductance element 80 is mounted on another substrate, the surface on which the electrode portion 80d 'is formed is mounted below, and can be connected to the circuit on the other substrate through the electrode portion 80d'. In this way, if the variable inductance element 80 is mounted on another substrate, the electrode portion 80d and the electrode portion 80e appear on it, so that -19- (16) (16) 200406916 can be bridged and used during use. Adjust the number of turns of the coil. In addition, the part of the circuit element held on the multilayer substrate 8Oc can be mutually placed with the circuit element of the variable inductance element of this embodiment. The constituent elements 80a to 80e of the variable inductance element 80 correspond to those in the variable inductance element 10 in which the numerical part of the symbol is changed from 10 to 80. Regarding the alternative embodiment of the structure of the electrode portion, Figure 8 (b) shows the variable inductance element 81. Although the variable inductance element 81 has almost the same structure as the variable inductance element 80, the difference is that the electrode portion 80d 'is three or more (Here, three), the central axis of the coil 81 a is alternately formed (sawtooth arrangement) on one of the sides near the coil ends on both sides of the coil 8 1 a. This embodiment has a sixth embodiment and Features of both sides of the eighth embodiment. Next, a specific structure and an embodiment of the present invention having an inductance characteristic will be described. First, the structure of the variable inductance element 90 according to the first embodiment of the present invention will be described. This first embodiment is an example of a specific structure of the first embodiment of the present invention. Fig. 9 (a) is a plan view of the coil of the variable inductance element 90 according to the first embodiment of the present invention, and Fig. 9 (b) is a cross-sectional view taken along the line A-A thereof. The variable inductance element 90 is a coil 90a and an electrode portion 90d (also referred to as "adjustment surface electrode") formed by a unit coil 90b (in the figure, a reference symbol is given to one unit coil). "), An electrode portion 90d ', and an electrode portion 90e. The electrode portions 90e are formed in six portions corresponding to the opposing portions at six places from Step 1 to Step. In the figure, it is distinguished from an electrode portion 90e (Stepl) to an electrode portion 90e (Step6). The variable inductance can be adjusted for the inductance corresponding to one of the steps by connecting the electrode part 9 0 e corresponding to one Sep and the electrode part 90d opposite to the transmission gap -20 · (17) 200406916. element.

線圈9 0 a係’在多層基板的多數絕緣層之形成步驟中，-賦予包含當成形成在絕緣層間的導電層之一部份而形成的 部份之電感的構成要素，中心軸爲平行於多層基板，其單 位捲線90b形成之線圈面係垂直多層基板，以及包含平行 多層基板之捲線部份以及垂直該多層基板之捲線部份。第 9(a)圖以及第9(b)圖中的長度之數値單位爲mm。電 路的導體以及基板底面和側面爲完全導體，導體間的介電 常數設爲2.0而實施模擬。線圈和電容器係就處於此種位 置關係的可變電感元件，使用三次元電磁場模擬器 (S ο η n e t )以進行解析。The coil 9 0 a is a constituent element that imparts inductance including a portion formed as a part of a conductive layer formed between insulating layers in a step of forming most insulating layers of a multilayer substrate, and a central axis is parallel to the multilayer The substrate, the coil surface formed by the unit coil 90b is a vertical multilayer substrate, and a coil portion including the parallel multilayer substrate and a coil portion perpendicular to the multilayer substrate. The unit of the length 値 in Figs. 9 (a) and 9 (b) is mm. The conductors of the circuit and the bottom and side surfaces of the substrate are complete conductors, and the dielectric constant between the conductors is set to 2.0 for simulation. The coil and capacitor are variable inductance elements in this positional relationship, and a three-dimensional electromagnetic field simulator (S ο η n e t) is used for analysis.

首先，進行線圈的解析。第10圖係關於本發明之實 施例的可變電感元件90之線圈的斜視圖。第1 1圖係表示 在可變電感元件 90中，跨接電極部 90d和電極部 90e(Step6)之構造。在跨接Stepl至Step6之個別的相對部 時，將此線圈之電感的頻率特性由500MHz至4000MHz或 者4500MHz爲止的每500MHz之電感値以模擬求得，則可 獲得表1的結果，如將其加以圖示，則成爲第1 2圖。 -21 - (18) 200406916 表1 頻丰 S t e ρ 0 Step 1 S tep2 S tep 3 S tep4 S tep5 S tep6 500 9.06 8.33 7.22 6.04 4.86 3.71 2.65 1000 9.35 8.56 7.37 6.13 4.91 3.74 2.67 1500 9.88 8.96 7.63 6.28 4.99 3.78 2.69 2000 10.75 9.61 8.04 6.52 5.12 3.84 2.72 2500 12.16 10.63 8.64 6.85 5.29 3.93 2.77 3000 14.59 12.25 9.53 7.32 5.52 4.04 2.83 3 500 19.39 15.08 10.90 7.97 5.83 4.19 2.91 4000 32.41 20.92 13.15 8.90 6.23 4.37 3.01 4500 17.38 10.32 6.78 4.60 3.14 由第12圖和表1，如看自我共振頻率影響少的2GHz 以下之頻帶時，知道每IStep，約可調整InH之電感。如 此，藉由模擬來顯示可以簡便且高精度調整電感。 接著，說明關於本發明之實施例2的可變電感元件 1 3 0之構造。此實施例2係本發明之第1實施形態的代替 實施形態的具體構造之一例，第1 3 ( a )圖係可變電感元 件130的線圈之平面圖’弟13(b)圖係其之B-B視圖橫 剖面圖。可變電感元件1 3 0雖與本發明之實施例1的可變 電感元件9 0具有幾乎相同的構造（將參考號碼之「9 0」 以「1 30」予以置換之構造係分別相對應），但是不同點 爲：與電極部130d相對的電極部130e係形成爲2個以 上，而且，就線圈的中心軸交互形成在該電極部的兩側之 -22- (19) (19)200406916 各側。電極部 1 3 0 e 係對應 s te P 1 a、s t e p 1 b、S t e p 2 a.....First, the coil is analyzed. Fig. 10 is a perspective view of a coil of a variable inductance element 90 according to an embodiment of the present invention. FIG. 11 shows a structure in which the variable inductance element 90 is connected across the electrode portion 90d and the electrode portion 90e (Step 6). When the individual opposite parts of Step1 to Step6 are bridged, the frequency characteristics of the inductance of this coil are calculated from 500MHz to 4000MHz or 4500MHz inductance per 500MHz, and the results in Table 1 can be obtained. It is shown in Fig. 12. -21-(18) 200406916 Table 1 Frequency Feng Ste ρ 0 Step 1 S tep2 S tep 3 S tep4 S tep5 S tep6 500 9.06 8.33 7.22 6.04 4.86 3.71 2.65 1000 9.35 8.56 7.37 6.13 4.91 3.74 2.67 1500 9.88 8.96 7.63 6.28 4.99 3.78 2.69 2000 10.75 9.61 8.04 6.52 5.12 3.84 2.72 2500 12.16 10.63 8.64 6.85 5.29 3.93 2.77 3000 14.59 12.25 9.53 7.32 5.52 4.04 2.83 3 500 19.39 15.08 10.90 7.97 5.83 4.19 2.91 4000 32.41 20.92 13.15 8.90 6.23 4.37 3.01 4500 17.38 10.32 6.78 4.60 3.14 3.14 by In Figure 12 and Table 1, if you look at the frequency band below 2GHz, which has less influence on the self-resonance frequency, you know that the inductance of InH can be adjusted for each IStep. In this way, it is possible to easily and accurately adjust the inductance by displaying the simulation. Next, the structure of the variable inductance element 130 according to the second embodiment of the present invention will be described. This second embodiment is an example of a specific structure of the alternative embodiment of the first embodiment of the present invention, and FIG. 13 (a) is a plan view of the coil of the variable inductance element 130. BB view cross-sectional view. Although the variable inductance element 1 3 0 has almost the same structure as the variable inductance element 90 of the first embodiment of the present invention (the structure in which the reference number "9 0" is replaced with "1 30" is respectively (Corresponding), but the difference is that the electrode portion 130e opposite to the electrode portion 130d is formed in two or more, and the central axis of the coil is alternately formed on both sides of the electrode portion -22- (19) (19) 200406916 on each side. The electrode part 1 3 0 e corresponds to ste P 1 a, s t e p 1 b, S t e p 2 a ...

Step6b之1 2處的相對部而形成1 2個。如此，藉由將個別 的電極部1 30e形成在電極部1 30d的兩側，可以非常精密 地調整電感。 第13(a)圖以及第13(b)圖中的長度之數値單位 爲mm。電路的導體以及基板底面和側面爲完全導體，導 體間的介電常數設爲2.0而實施模擬。線圈和電容器係就 處於此種位置關係的可變電感元件，使用三次元電磁場模 擬器（Sonnet )以進行解析。 首先，進行線圈的解析。第1 4圖係關於本發明之實 施例的可變電感元件1 30之線圈的斜視圖。第1 5圖係表 示在可變電感元件 130中，跨接電極部130d和電極部 130e(Step6b)之構造。在跨接Stepla至Step6b之個別的相 對部時，將此線圈之電感的頻率特性由 5 00MHz至 3500MHz、4000MHz 或者 4500MHz 爲止的每 500MHz 之電 感値以模擬求得，則可獲得表2的結果，如將其加以圖 示，則成爲第1 6圖。 -23- (20)200406916 表2 頻率 S t ep 0 S t ep 1 a S t ep 1 b S tep2a S tep 2b S t e p 3 a S tep 3 b 500 9.07 8.54 8.45 7.47 7.39 6.31 6.23 1000 9.39 8.80 8.70 7.64 7.56 6.41 6.33 1500 9.99 9.29 9.17 7.96 7.86 6.60 6.51 2000 10.99 10.07 9.93 8.45 8.33 6.88 6.78 2500 12.67 11.35 11.14 9.19 9.05 7.29 7.17 3000 15.78 13.52 13.19 10.34 10.14 7.87 7.72 3 5 00 22.74 17.72 17.07 12.20 11.88 8.70 8.5 1 4000 28.57 26.63 15.56 14.97 9.96 9.68 4500 23.14 21.68 11.98 11.54 頻率 Step4a S tep4b S tep5 a Step5b S t e p 6 a Step6b 500 5.14 5.06 3.99 3.91 2.92 2.82 1000 5.19 5.11 4.02 3.94 2.94 2.84 1500 5.30 5.21 4.07 3.98 2.97 2.86 2000 5.45 5.36 4.15 4.06 3.01 2.90 2500 5.65 5.55 4.25 4.15 3.06 2.95 3000 5.94 5.82 4.38 4.28 3.12 3.01 3500 6.31 6.18 4.55 4.44 3.22 3.09 4000 6.83 6.66 4.77 4.64 3.32 3.20 4500 7.53 7.3 1 5.05 4.91 3.45 3.32 由第16圖和表2，如看自我共振頻率影響少的2GHz -24- (21) 200406916 以下之頻帶時，知道每IStep，約可調整O.lnH之電感 能夠高精度地調整電感。如此，藉由模擬來顯示可以簡 且極高精度調整電感。 此後，說明上述之可變電感元件10〜81、90、以 130 (電感元件60 )的動作。可變電感元件10〜61、90 以及1 30 (電感元件60 )雖係多層基板之形態，爲將構 印刷基板、單晶片1C等之半導體晶片安裝於其上之插 物（i n t e r ρ 〇 s e 1·)、或者半導體晶片的電極配線層等， 提供作爲電感器之機能的元件以使之動作爲佳。可變電 元件7 0可使動作爲LC共振電路元件。可變電感元件 以及8 1係可使動作爲晶片型電感器。可變電感元件1 0 81、90、以及130 (電感元件60 )可藉由線圈之伸長方 的調節，能夠簡便而且任意設定圈數，能夠自由設定自 電感等之特性而加以製造。可變電感元件1 0〜5 0、6 1 8 1、以及1 30可藉由跨接線圈的連接在特定位置的電極 彼此、予以分開，使用時，能夠自由變更圈數，可以調 自我電感等之特性。特別是在可變電感元件1 30的構 中，能夠極爲精密調整有效線圈長度，所以可以高精度 整自我電感。 另外，也可以適當組合上述之個別實施形態內的2 以上。 接著，說明本發明之可變電感元件10〜81、90、 及130(電感元件60)的製造方法。可變電感元件10 81、90、以及130 (電感元件60)可藉由在生片印刷導 便 及 成 入 能 感 80 向 我 部 整 造 調 種 以 電 ►25- (22) (22)200406916 性糊，將其多層化後整批一次燒結之陶瓷碎片零件的材料 以及製造方法加以製造，另外也可以藉由利用有機材料之 堆積工法加以製造。此後，說明藉由堆積工法之製造方 法。首先’準備在絕緣層的兩面形成由銅箔形成的導電層 之兩面貼銅積層板。此導電層由於平行多層基板之故，乃 構成線圈的平行於多層基板之部份。接著，在以該兩面的 導電層間使之導通的地方以鑽頭、雷射等開孔。而且，以 電鍍、導電性糊之塡充等使該孔導電化，取得導電層間的 導通。此導電層間的導通部係構成線圈的垂直多層基板之 部份。接著，藉由減去法等，兩面都去除導電層而留下線 圈的導線部份，形成平行於多層基板的線圈之導線部份。 將如此獲得的基板當成內層基板，在其兩面形成絕緣層， 然後在其外面形成導電層，進行圖案化（線圈的水平部份 的形成）以及導電層間的導電連接（線圈的垂直部份之形 成）’進行更多層化。對於形成至此之多層基板，繼續實 施此一連串的多層化工程直到獲得所期望的線圈爲止。 多層化工程可藉由周知的手法來實施。在藉由所謂之 堆積法時，首先，在上述的內層基板的兩面形成絕緣層。 絕緣層則可使用玻璃環氧系或者芳族聚醯胺樹脂系等之聚 酯膠片、液狀或者薄膜狀的可可塑或者熱硬化性之樹脂組 成物，或者一般稱爲含樹脂銅箔之使銅箔和絕緣性樹脂成 爲一體者等。 絕緣層的形成例如可如下述般進行。在上述的內層基 板的兩面配置聚酯膠片類、未圖案化之銅箔、或者含樹脂 •26- (23) 200406916 銅箔，藉由積層沖壓法，將彼等整批一次積層、硬化，製 作使絕緣層和導電層成爲一體者。或者在上述之內層基板 上以網版印刷、窗簾式塗佈、噴灑塗佈等之周知慣用的方 法塗佈液狀的組成物，以UV、電子射線、熱等使之硬 化，也可以形成絕緣層。或者在上述的內層基板上以滾 輪、貼合等方法貼合薄膜狀的組成物，以特定的方法使之 硬化，也可以形成絕緣層。In Step 6b, one or two opposed parts are formed. Thus, by forming the individual electrode portions 130e on both sides of the electrode portions 130d, the inductance can be adjusted very precisely. The unit of length 値 in Figs. 13 (a) and 13 (b) is mm. The conductors of the circuit and the bottom and side surfaces of the substrate are complete conductors, and the dielectric constant between the conductors is set to 2.0 for simulation. The coil and capacitor are variable inductance elements in this positional relationship, and a three-dimensional electromagnetic field simulator (Sonnet) is used for analysis. First, the coil is analyzed. Fig. 14 is a perspective view of a coil of a variable inductance element 130 according to an embodiment of the present invention. Fig. 15 shows a structure in which the variable inductance element 130 bridges the electrode portion 130d and the electrode portion 130e (Step 6b). When the individual opposite parts of Stepla to Step6b are bridged, the frequency characteristics of the inductance of this coil are calculated from the inductance of every 500MHz from 500MHz to 3500MHz, 4000MHz or 4500MHz, and the results in Table 2 can be obtained. If this is illustrated, it becomes the 16th figure. -23- (20) 200406916 Table 2 Frequency S t ep 0 S t ep 1 a S t ep 1 b S tep 2a S tep 2b S tep 3 a S tep 3 b 500 9.07 8.54 8.45 7.47 7.39 6.31 6.23 1000 9.39 8.80 8.70 7.64 7.56 6.41 6.33 1500 9.99 9.29 9.17 7.96 7.86 6.60 6.51 2000 10.99 10.07 9.93 8.45 8.33 6.88 6.78 2500 12.67 11.35 11.14 9.19 9.05 7.29 7.17 3000 15.78 13.52 13.19 10.34 10.14 7.87 7.72 3 5 00 22.74 17.72 17.07 12.20 11.88 8.70 8.5 1 4000 28.57 26.63 15.56 14.97 9.96 9.68 4500 23.14 21.68 11.98 11.54 Frequency Step4a S tep4b S tep5 a Step5b S tep 6 a Step6b 500 5.14 5.06 3.99 3.91 2.92 2.82 1000 5.19 5.11 4.02 3.94 2.94 2.84 1500 5.30 5.21 4.07 3.98 2.97 2.86 2000 5.45 5.36 4.15 4.06 3.01 2.90 2500 5.65 5.55 4.25 4.15 3.06 2.95 3000 5.94 5.82 4.38 4.28 3.12 3.01 3500 6.31 6.18 4.55 4.44 3.22 3.09 4000 6.83 6.66 4.77 4.64 3.32 3.20 4500 7.53 7.3 1 5.05 4.91 3.45 3.32 As shown in Figure 16 and Table 2, if you look at the self-resonance frequency, it has less influence When the frequency band is below 2GHz -24- (21) 200406916, you can adjust about O.lnH for each IStep. Inductor inductance can be accurately adjusted. In this way, the simulation can be used to show that the inductance can be adjusted simply and extremely accurately. Hereinafter, operations of the variable inductance elements 10 to 81, 90, and 130 (inductance element 60) described above will be described. Although the variable inductance elements 10 to 61, 90, and 1 30 (inductance element 60) are in the form of multilayer substrates, they are interposers (inter ρ ose) on which semiconductor wafers such as printed circuit boards, single-chip 1C, and the like are mounted. 1 ·), or the electrode wiring layer of a semiconductor wafer, etc., it is better to provide an element functioning as an inductor to operate it. The variable electric element 70 can operate as an LC resonance circuit element. The variable inductance element and the 81 series can be operated as chip type inductors. The variable inductive elements 10 81, 90, and 130 (inductive element 60) can be easily and arbitrarily set the number of turns by adjusting the elongation of the coil, and can be manufactured by freely setting characteristics such as self-inductance. The variable inductance elements 1 0 to 5 0, 6 1 8 1 and 1 30 can be separated from each other by connecting electrodes at specific positions across the coil. When used, the number of turns can be freely changed and the self inductance can be adjusted. And other characteristics. In particular, in the configuration of the variable inductance element 130, the effective coil length can be adjusted extremely precisely, so that the inductance can be adjusted with high accuracy. In addition, two or more of the individual embodiments described above may be appropriately combined. Next, a method for manufacturing the variable inductance elements 10 to 81, 90, and 130 (inductance element 60) of the present invention will be described. Variable inductive elements 10 81, 90, and 130 (inductive element 60) can be printed and printed on the green sheet, and can be sensed 80. We can adjust and adjust the electricity to our department ►25- (22) (22) 200406916 The paste is manufactured by multi-layering the material and manufacturing method of the ceramic sintered parts which are sintered in one batch after being multilayered. In addition, it can also be manufactured by using the organic material stacking method. Hereinafter, a manufacturing method by a stacking method will be described. First, a copper laminated board is prepared on both sides of a conductive layer formed of a copper foil on both sides of an insulating layer. Since this conductive layer is parallel to the multilayer substrate, it is the portion of the coil that is parallel to the multilayer substrate. Next, a hole is drilled with a drill or a laser in a place where the conductive layers between the two surfaces are made conductive. Then, the holes are made conductive by electroplating, filling with a conductive paste, or the like to obtain conduction between the conductive layers. The conductive portion between the conductive layers constitutes a portion of the vertical multilayer substrate of the coil. Next, by subtracting the conductive layer from both sides, the conductive wire portion of the coil is left to form a conductive wire portion of the coil parallel to the multilayer substrate. The substrate thus obtained was regarded as an inner layer substrate, an insulating layer was formed on both sides thereof, and then a conductive layer was formed on the outside thereof for patterning (the formation of a horizontal part of the coil) and conductive connection between the conductive layers (the vertical part of the coil). Formation) 'for more layering. For the multilayer substrate formed so far, this series of multilayering processes is continued until the desired coil is obtained. Multi-layered engineering can be implemented by a well-known method. In the so-called stacking method, first, insulating layers are formed on both surfaces of the above-mentioned inner layer substrate. As the insulating layer, a glass epoxy-based or aromatic polyamide resin-based polyester film, a liquid or film-like plastic or thermosetting resin composition, or a resin-containing copper foil is generally used. Copper foil and insulating resin are integrated. The formation of the insulating layer can be performed, for example, as described below. Polyester films, unpatterned copper foils, or resin-containing copper foils are placed on both sides of the above-mentioned inner substrate, and they are laminated and hardened in batches by a lamination stamping method. Integrate the insulating layer and the conductive layer. Alternatively, a liquid composition may be applied to the above-mentioned inner substrate by screen printing, curtain coating, spray coating, and the like, and may be cured by UV, electron beam, heat, or the like. Insulation. Alternatively, a film-like composition may be bonded to the above-mentioned inner-layer substrate by a roller, a bonding method, or the like, and cured by a specific method to form an insulating layer.

接著，形成引洞。利用鑽頭、雷射等，在以上述工程 所獲得的多層基板的特定位置形成引洞。在利用聚酯膠片 類或者含樹脂銅箔而與絕緣層一同形成導電層時，於使用 廣被用於盲引洞的形成之碳酸氣體雷射時，因應需要，也 可施以以蝕刻預先去除特定位置的導電體之遮罩加工。Then, lead holes are formed. Using drills, lasers, etc., lead holes are formed at specific positions of the multilayer substrate obtained by the above process. When using a polyester film or a resin-containing copper foil to form a conductive layer together with an insulating layer, a carbon dioxide gas laser widely used for the formation of blind vias may be removed by etching in advance if necessary. Mask processing for conductors at specific locations.

在利用聚酯膠片類或者含樹脂銅箔而與絕緣膜一同形 成導電層時，係以印刷、分注等之方法在引洞塡埋配合 銀、銅等之導電性粉末的導電性糊，以特定方法使之硬 化。或者進行通常的通孔電鍍，即在引洞內給予電鍍觸媒 後，進行無電解電鍍，接著，藉由進行電解電鍍之方法， 以形成電鍍層之方法，也能達成導電連接。另一方面，利 用液狀或者薄膜狀的組成物以形成絕緣層時，例如，丨中g 銅箔，在絕緣層的外側形成導電層，遮罩加工特定位置 後，藉由導電性糊或者電鍍層使肓引洞導電化而加以連 接。在此情形，也可先進行盲引洞的導電化。另外，在形 成絕緣層、盲引洞的基板給予觸媒，無電解電鍍處理，接 著，因應需要，藉由電解電鍍處理，也可一次進行導電層 -27- (24) (24)200406916 的形成和盲引洞的導電化。在此情形下，盲引洞的導電化 也可藉由導電性糊來進行。 或者藉由以下的方法，也可一次進行絕緣層和導電層 的形成、導電層間的導電連接。即利用導電性糊等，在多 層基板上的特定位置形成前端尖銳的導電性凸塊，在其上 配置聚酯膠片和銅箔、薄膜狀的絕緣體和銅、或者含樹脂 銅膜後，進行沖壓加工。藉此，前端尖銳的導電性凸塊貫 穿絕緣層，實現與導電層的導電連接。 如上述般，在以堆積法積層時，以肓引洞係藉由導電 性糊等，以導電體沒有間隙地進行塡充，線圈的導線之剖 面全面成爲導電體爲佳。但是，如習知的通孔電鍍般，即 使只是外圍部被導電化的構造，依據頻帶，也不會損及利 用本發明之方法所形成的線圈的特徵。 另外，在堆積盲引洞，以形成線圈的捲線的垂直部份 時，在利用通孔電鍍之一般的堆積法中，所謂的堆疊引洞 (via on via )構造其形成上非常困難之故，線圈的捲線 之垂直部份無法成爲完全直線之結果，多數會成爲積層部 份有段差的階段狀。但是，即使成爲此種構造，依據頻 帶’也不會任何損及利用本發明之方法所形成的線圈的特 徵。 另外’利用藉由電鍍所連接的通孔基板，使用上述液 狀或者薄膜狀的絕緣材料時，或者在一旦藉由堆積法而形 成有盲引洞之絕緣層上進一步進行積層時，也可以藉由塡 埋孔用的油墨或者電鍍處理，以塡埋通孔或者盲引洞，以 -28- (25) (25)200406916 使表面平坦化。 在堆積法以外，也可以藉由以下方法一次予以積層。 首先，利用雷射等，在單面貼銅玻璃環氧基板的基材側的二 特定位置進行開孔加工。接著，以銅箔爲電極（陰極）進— 行電鍍’以電鍍塡充孔。在其上，繼續以電鍍形成低融點 的金屬凸塊。接者，將銅箔触刻加工爲特定圖案（線圈的 捲線之水平部份）。在凸塊側薄薄塗佈與使用於絕緣層者 相同的絕緣體組成物，使之半硬化，以製作外層基板。 接著’對位內層基板和外層基板，使外層基板的凸塊 來到內層基板的特定地方，予以沖壓加工。藉此，半硬化 的組成物由凸塊部被去除，組成物形成層間的絕緣層的同 時，凸塊部形成與外層基板的導電層之導電連接。藉由此 種工程，可以形成線圈。藉由重複此工程，更多層化也可 容易進行。此時，絕緣層的厚度雖可因應用途而任意設 定’但是’由絕緣可靠性的觀點，期望1 ο μ m至300 // m 之程度。導體的厚度也與絕緣層相同，雖可因應用途而任 意設定，但是實用上期望5 μ m至200 // m。 至此爲止’雖主要說明線圈的形成方法，但是關於在 多層基板上具有電極部的實施形態，電極部也可與線圈的 捲線之水平部份同樣形成。另外，關於在線圈中心部具有 由磁性體形成的中心構造之實施形態，該部份可藉由塗佈 含有鐵、鐵氧體等之糊等，可以形成中心構造。另外，關 於含電容器的實施形態，在多層基板的積層過程中，於圖 案化導電層時，藉由殘留成爲電容器的極板之部份，可以 -29- (26) 200406916 形成電容器。另外，也可在多層基板的積層過程 電容器。 以上，雖就線圈部份的製造方法進行說明， 圈的形成同時，必要的其他電路或與其之配線也 線圈形成之各層。那時，爲了與該其他電路或配 匹配’可以由上述的多層化工程中選擇適當工 施。另外’關於不具有盲引洞的發明之實施形態 由基於上述的堆積工法的製造方法，可藉由組合 孔電鍍、以及積層沖壓之周知慣用的多層基板製 以製造。 另外，關於可變電感元件10〜70、90、以及 中之一，也可以形成在構成單晶片IC等之半 上。藉由做成此種構造，在使用時，可以高積體 體組入能夠自由變更特性的電感器。典型例爲顯 電晶體’進而在形成由鎢等構成的電極部之矽 層，即電極配線層形成第1圖之可變電感元件 子。藉由應用此方法，線圈的形成、圈數比、形 可以任意設定。另外，半導體並不限定於矽，也 鎵等任意的周知的半導體材料。 首先，在形成電晶體、電極部的砂晶圓上， 層的絕緣層。利用CVD等之氣相沈積法，以形 膜，或者在旋轉塗佈近年來受到囑目的聚亞醯胺 丁烯等之有機材料後，予以後烘烤而形成。接著 處所利用各種雷射進行開孔。孔係半導體晶圓的 中，配置 但是在線 可形成在 線的形成 程加以實 ，則不藉 蝕刻、通 造方法加 130之其 導體晶片 度在半導 示：形成 晶圓的上 10的例 成方向等 可以使用 形成最下 成氧化矽 、苯並環 ，在必要 特定處所 -30- (27) (27)200406916 或者與下層的電極部進行導電連接的處所。接著，形成導 電性圖案。首先，藉由濺鍍，利用CVD等之氣相沈積法 或者電鍍法等之濕式法，在鋁之導電層形成銅的導電層。 接著，曝光、餘刻，圖案化導電層。在此情形下，也可在 先前形成圖案化之抗蝕劑層後，進行導電化。在此工程 中，孔也被導電化，完成導電層間的導電連接。另外，在 曝光工程前，通常藉由物理硏磨，或者稱爲C Μ P法之組 合化學硏磨和物理硏磨的方法等，使表面平坦化。 接著，在其上進一步形成絕緣層。接著，再度開孔， 藉由圖案化，形成導電性圖案。進而在其上形成絕緣層， 施以開孔、導電化、圖案化，更形成導電性圖案，同時， 取得導電性圖案間的導通。以後，重複此工程直到形成所 期望的線圈爲止。 在矽晶圓上形成含所期望的線圈之多層基板後，以半 導體晶片單位切開該矽晶圓和含線圈的多層基板。另外， 也可在矽晶圓積層內藏線圈的多層基板前，先將矽晶圓切 開爲晶片單位。在此情形下，與上述工程相同，可在預先 切開的半導體晶片的外面積層內藏線圈的多層基板。 如以上說明般，如依據本發明之可變電感元件時，可 以獲得作用爲形成在多層基板內，小型，使用時可以變更 自我電感等之特性的電感器元件。 【圖式簡單說明】 第1 U)圖係顯示關於本發明之第1實施形態的可變電 -31 - (28) (28)200406916 _元< 件1 〇的構造斜視圖，及第1 (b)圖係顯示可變電感元 件1 0的電極部的構造圖。 第2(a)圖係顯示關於本發明之第2實施形態的可變電 _元；件2 〇的構造斜視圖，及第2 (b)圖係顯示可變電感元 _ 2 〇的電極部的構造圖。 第3 (a)圖係顯示關於本發明之第3實施形態的可變電 _ $件30的構造斜視圖，及第3(b)圖係顯示可變電感元 件3〇的電極部的構造圖’第3(c)圖係顯示第3(b)圖之電 _部被修整的樣子圖，第3(d)圖係顯示可變電感元件30 的電極部的其他構造圖’以及第3(e)圖係第3(d)圖所示電 極部被修整的樣子圖。 第4 (a)圖係顯示關於本發明之第4實施形態的可變電 件40的構造斜視圖，及第4(b)圖係顯示關於本發明 之第4實施形態的電極部之構造的代替實施形態的可變電 感元件4 1之構造斜視圖。 第5 (a)圖係顯示關於本發明之第5實施形態的可變電 感元件50的構造斜視圖，及第5(b)圖係顯示關於本發明 之第5實施形態的線圈之構造的代替實施形態的可變電感 元件5 1之構造斜視圖。 第6(a)圖係顯示關於本發明之第6實施形態的可變電 感元件60的構造斜視圖，及第6(b)圖係顯示關於本發明 之第6實施形態的電極部之構造的代替實施形態的可變電 感元件6 1之構造斜視圖。 第7圖係顯示關於本發明之第7實施形態的可變電感 -32- (29) (29)200406916 元件70的構造斜視圖。 第8(a)圖係顯示關於本發明之第8實施形態的可變電 感元件80的構造斜視圖，及第8(b)圖係顯示關於本發明 之第8實施形態的電極部之構造的代替實施.形態的可變電 感元件8 1之構造斜視圖。 第9 (a)圖係關於本發明之實施例1的可變電感元件90 的線圈平面圖。第9(b)圖係其之A-A視圖橫剖面圖。 第1 0圖係關於本發明之實施例1的可變電感元件90 的線圈斜視圖。 第1 1圖係關於本發明之實施例1的可變電感元件90 的線圈’爲跨接電極部之線圈的斜視圖。 第1 2圖係顯示關於本發明之實施例1的可變電感元 件90的電感頻率特性曲線圖。 第1 3 (a)圖係關於本發明之實施例2的可變電感元件 130的線圈平面圖。第13(b)圖係其之B-B視圖橫剖面 圖。 第14圖係關於本發明之實施例2的可變電感元件 130的線圈斜視圖。 第1 5圖係關於本發明之實施例2的可變電感元件 1 30的線圈，爲跨接電極部之線圈的斜視圖。 第1 6圖係顯示關於本發明之實施例2的可變電感元 件1 3 0的電感頻率特性曲線圖。 主要元件對照表 -33- (30) (30)200406916 1 0可變電感元件 1 0 a線圈 1 0 b單位捲線 1〇c多層基板 1 0 d電極部 1 0 e電極部 1 0 f婷線 20 可變電感元件 2 0a 線圈 20c多層基板 2 0 e電極部 3 0 可變電感元件 3 0 a線圈 3 0 c 電極部 3 0 e 電極部 40 可變電感元件 4 0a 線圈 4 1可變電感元件 4 1 e電極部 5 0可變電感元件 5 0 a線圈 50g磁性體 51可變電感元件 5 1 a 線圈 -34 (31) (31)200406916 60電感元件 60a 線圈 60c多層基板 6 0 d電極部 6 0 d ’電極部 61 可變電感元件 6 1 d 電極部 6 1 e 電極部 7 0 可變電感元件 7 0 a線圈 7 0 c多層基板 70h電容器 70ι連接部 -35When using a polyester film or a resin-containing copper foil to form a conductive layer together with an insulating film, a conductive paste containing conductive powder of silver, copper, or the like is buried in a lead-in hole by printing, dispensing, or the like. Specific methods to harden it. Alternatively, a conventional through-hole plating, that is, electroless plating is performed after a plating catalyst is provided in the lead-through hole, and then a conductive connection can be achieved by performing electrolytic plating to form a plating layer. On the other hand, when a liquid or film-like composition is used to form an insulating layer, for example, medium-g copper foil, a conductive layer is formed on the outside of the insulating layer, and a specific position is masked, and then a conductive paste or plating The layer electrically connects the ytterbium holes. In this case, it is also possible to conduct the blind hole conduction first. In addition, the substrate on which the insulating layer and the blind vias are formed is given a catalyst and subjected to electroless plating treatment, and then, if necessary, the conductive layer can be formed at one time by electrolytic plating treatment. And blind hole conduction. In this case, the conduction of the blind via can also be performed by a conductive paste. Alternatively, the formation of the insulating layer and the conductive layer and the conductive connection between the conductive layers may be performed at one time by the following method. That is, a conductive bump or the like is used to form a sharp conductive tip at a specific position on a multi-layer substrate, and a polyester film and a copper foil, a film-like insulator and copper, or a resin-containing copper film are disposed thereon, followed by press processing. Thereby, a sharp conductive bump at the front end penetrates the insulating layer to realize a conductive connection with the conductive layer. As described above, when the layers are stacked by the stacking method, it is preferable that the conductive holes are filled with a conductive paste or the like with a conductive paste without gaps, and the cross-section of the wire of the coil is preferably a conductive body. However, like the conventional through-hole plating, even if the structure in which only the peripheral portion is electrically conductive, depending on the frequency band, the characteristics of the coil formed by the method of the present invention are not impaired. In addition, when the blind lead-in holes are stacked to form the vertical portion of the winding wire of the coil, in a general stacking method using through-hole electroplating, it is very difficult to form a so-called via-via structure, The vertical part of the coil's winding cannot be the result of a complete straight line, and most of it will have a step shape with a step difference in the laminated part. However, even with such a structure, the characteristics of the coil formed by the method of the present invention will not be impaired in any way depending on the frequency band. In addition, when using a through-hole substrate connected by electroplating, using the above-mentioned liquid or film-like insulating material, or when further laminating on an insulating layer in which blind vias are formed by a stacking method, The surface is flattened by the ink or plating treatment for the buried holes, buried through holes or blind lead holes, and -28- (25) (25) 200406916. In addition to the stacking method, lamination can be performed at one time by the following method. First, a laser or the like is used to perform hole processing at two specific positions on the base material side of the copper-glass epoxy substrate on one side. Next, a copper foil is used as an electrode (cathode) for electroplating 'to fill the holes with electroplating. On it, low-melting metal bumps continue to be formed by electroplating. Then, the copper foil is engraved into a specific pattern (horizontal part of the winding wire of the coil). The same insulator composition as that used for the insulating layer was thinly coated on the bump side and semi-hardened to produce an outer substrate. Next, align the inner substrate and the outer substrate so that the bumps of the outer substrate come to a specific place on the inner substrate and press-process. Thereby, the semi-hardened composition is removed from the bump portion, and at the same time the composition forms an interlayer insulating layer, the bump portion forms a conductive connection with the conductive layer of the outer substrate. With this process, a coil can be formed. By repeating this process, further layering can also be easily performed. At this time, although the thickness of the insulating layer can be arbitrarily set according to the application, ′, but from the viewpoint of insulation reliability, it is desired to be about 1 ο μm to 300 // m. The thickness of the conductor is also the same as that of the insulating layer. Although it can be arbitrarily set according to the application, it is practically expected to be 5 μm to 200 // m. Up to this point, although the method of forming the coil is mainly explained, in the embodiment in which the electrode portion is provided on the multilayer substrate, the electrode portion may be formed in the same manner as the horizontal portion of the coil winding. In addition, in the embodiment in which the center portion of the coil has a center structure made of a magnetic material, this portion can be formed into a center structure by applying a paste containing iron, ferrite, or the like. In addition, regarding the capacitor-containing embodiment, during the lamination process of the multi-layer substrate, when the conductive layer is patterned, the portion remaining as the electrode plate of the capacitor can form a capacitor -29- (26) 200406916. Alternatively, capacitors can also be laminated in a multilayer substrate. In the above, although the manufacturing method of the coil portion has been described, the other circuits or wirings necessary for the formation of the coil are also layers of the coil. At that time, an appropriate operation may be selected from the above-mentioned multi-layered engineering in order to match the other circuit or distribution. In addition, the embodiment of the invention having no blind lead-through hole can be manufactured by a manufacturing method based on the above-mentioned stacking method, and can be manufactured by a well-known and conventional multi-layer substrate by combination hole plating and lamination punching. In addition, one of the variable inductance elements 10 to 70, 90, and 50 may be formed on a half constituting a single-chip IC or the like. With such a structure, an inductor can be incorporated in the high-capacity body and its characteristics can be freely changed during use. A typical example is a display transistor 'and a silicon layer of an electrode portion made of tungsten or the like, that is, an electrode wiring layer is formed as a variable inductance element shown in FIG. 1. By applying this method, the coil formation, turns ratio, and shape can be arbitrarily set. The semiconductor is not limited to silicon, and any known semiconductor material such as gallium. First, an insulating layer is formed on a sand wafer on which transistors and electrodes are formed. It is formed by forming a film by a vapor deposition method such as CVD, or spin-coating an organic material such as polyimide butene, which has received attention in recent years, followed by post-baking. The space was then perforated with various lasers. In the hole-based semiconductor wafer, the configuration, but the online formation process can be implemented, and the conductor wafer degree of 130 is not shown by etching or through fabrication. The semiconductor wafer is semi-conductive: the top 10 examples of the wafer formation direction It can be used to form the lowest silicon oxide, benzo ring, etc., and specify the space where necessary -30- (27) (27) 200406916 or the place where the electrode part of the lower layer is conductively connected. Next, a conductive pattern is formed. First, a copper conductive layer is formed on a conductive layer of aluminum by sputtering, a vapor deposition method such as CVD, or a wet method such as electroplating. Then, the conductive layer is patterned by exposure and after-etching. In this case, the patterned resist layer may be electrically conductive. In this project, the holes are also conductive, completing the conductive connection between the conductive layers. In addition, before the exposure process, the surface is usually flattened by physical honing, or a combination of chemical honing and physical honing, which is called the CMP method. Next, an insulating layer is further formed thereon. Next, holes are opened again, and a conductive pattern is formed by patterning. Further, an insulating layer is formed thereon, and openings are formed, conductive, and patterned to form conductive patterns, and at the same time, conduction between the conductive patterns is obtained. Thereafter, this process is repeated until the desired coil is formed. After forming a multilayer substrate including a desired coil on a silicon wafer, the silicon wafer and the multilayer substrate including the coil are cut in a semiconductor wafer unit. In addition, the silicon wafer can also be cut into wafer units before the multilayer substrate with the coils built in the silicon wafer is laminated. In this case, as in the above-mentioned process, a multilayer substrate in which a coil is embedded in an outer area layer of a previously cut semiconductor wafer can be used. As described above, when the variable inductance element according to the present invention is used, it is possible to obtain an inductor element which is formed in a multi-layer substrate, is small, and can change characteristics such as self inductance during use. [Brief Description of the Drawings] Figure 1 U) is a perspective view showing the structure of a variable electric-31-(28) (28) 200406916 _ element < 10 of the first embodiment of the present invention, and the first (b) A diagram showing a structure of an electrode portion of the variable inductance element 10. Fig. 2 (a) shows a variable electric element according to a second embodiment of the present invention; a perspective view of the structure of the element 20; and Fig. 2 (b) shows an electrode of the variable inductor_2. Department's structural diagram. Fig. 3 (a) is a perspective view showing the structure of a variable electric device 30 according to a third embodiment of the present invention, and Fig. 3 (b) is a view showing the structure of an electrode portion of a variable inductance element 30. FIG. 3 (c) is a diagram showing how the electric part of FIG. 3 (b) is trimmed, and FIG. 3 (d) is a diagram showing another structure of the electrode part of the variable inductance element 30 'and FIG. Fig. 3 (e) is a view showing a trimmed electrode portion shown in Fig. 3 (d). Fig. 4 (a) is a perspective view showing a structure of a variable electrical component 40 according to a fourth embodiment of the present invention, and Fig. 4 (b) is a view showing a structure of an electrode portion according to a fourth embodiment of the present invention. A perspective view of the structure of the variable inductance element 41 instead of the embodiment. Fig. 5 (a) is a perspective view showing a structure of a variable inductance element 50 according to a fifth embodiment of the present invention, and Fig. 5 (b) is a view showing a structure of a coil according to a fifth embodiment of the present invention. A perspective view of the structure of the variable inductance element 51 instead of the embodiment. Fig. 6 (a) is a perspective view showing a structure of a variable inductance element 60 according to a sixth embodiment of the present invention, and Fig. 6 (b) is a view showing a structure of an electrode portion according to a sixth embodiment of the present invention. A perspective view of the structure of the variable inductance element 61 instead of the embodiment. Fig. 7 is a perspective view showing a structure of a variable inductor -32- (29) (29) 200406916 of a seventh embodiment of the present invention. Fig. 8 (a) is a perspective view showing a structure of a variable inductance element 80 according to an eighth embodiment of the present invention, and Fig. 8 (b) is a view showing a structure of an electrode portion according to an eighth embodiment of the present invention. It is an oblique view of the structure of the variable inductance element 81 according to the embodiment. Fig. 9 (a) is a plan view of a coil of a variable inductance element 90 according to the first embodiment of the present invention. Fig. 9 (b) is a cross-sectional view of the A-A view. Fig. 10 is a perspective view of a coil of a variable inductance element 90 according to the first embodiment of the present invention. Fig. 11 is a perspective view showing a coil of a variable inductance element 90 according to the first embodiment of the present invention as a coil across the electrode portion. Fig. 12 is a graph showing an inductance frequency characteristic of the variable inductance element 90 according to the first embodiment of the present invention. Fig. 13 (a) is a plan view of a coil of a variable inductance element 130 according to a second embodiment of the present invention. Figure 13 (b) is a cross-sectional view taken along the line B-B. Fig. 14 is a perspective view of a coil of a variable inductance element 130 according to a second embodiment of the present invention. Fig. 15 is a perspective view of a coil of a variable inductance element 130 according to a second embodiment of the present invention, and is a coil across an electrode portion. Fig. 16 is a graph showing an inductance frequency characteristic of the variable inductance element 130 according to the second embodiment of the present invention. Main component comparison table -33- (30) (30) 200406916 1 0 Variable inductance element 1 0 a coil 1 0 b unit winding wire 10c multilayer substrate 1 0 d electrode part 1 0 e electrode part 1 0 fting line 20 Variable inductance element 2 0a Coil 20c Multi-layer substrate 2 0 e electrode part 3 0 Variable inductance element 3 0 a coil 3 0 c electrode part 3 0 e electrode part 40 variable inductance element 4 0a coil 4 1 OK Variable inductance element 4 1 e electrode part 5 0 variable inductance element 5 0 a coil 50g magnetic body 51 variable inductance element 5 1 a coil -34 (31) (31) 200406916 60 inductance element 60a coil 60c multilayer substrate 6 0 d electrode part 6 0 d 'electrode part 61 variable inductance element 6 1 d electrode part 6 1 e electrode part 7 0 variable inductance element 7 0 a coil 7 0 c multilayer substrate 70h capacitor 70ι connection part -35

Claims (1)

(1) (1)200406916 拾、申請專利範圍 1 · 一種可變電感元件，其特徵爲具有： _ 與多層基板形成爲一體的線圈，包含平行於該多層基 / 板之捲線部份以及垂直於該多層基板之捲線部份，該單位 . 捲線形成之線圈面爲垂直於多層基板之線圈；及 形成在上述多層基板之一側的外面上，及分別連接在 上述線圈的特定處所之2個以上的電極部， 上述線圈係被支持於上述多層基板內，以及 至少1個之上述電極部設置爲延伸至與其他電極部的 至少其中之一隔著間隙而相面對的位置。 2 ·如申請專利範圍第1項所述之可變電感元件，其 中，設置延伸至與其他電極部的至少其中之一隔著間隙而 相面對的位置之至少1個上述電極部係延伸設置在與上述 線圈的中心軸平行的方向，以及 與該電極部相面對的電極部係配置在該電極部的單 側。 3 ·如申請專利範圍第1項所述之可變電感元件，其 中，設置延伸至與其他電極部的至少其中之一隔著間隙而 相面對的位置之至少1個該電極部係延伸設置在與上述線 圈的中心軸平行的方向，以及 與該電極部相面對的電極部係形成有2個以上，而 且，就線圈的中心軸交互形成在該電極部的兩側之各側。 4 ·如申請專利範圍第1項所述之可變電感元件，其 中，上述電極部的至少其一係連接在上述線圈的末端。 -36 - (2) (2)200406916 5· —種電感元件，其特徵爲具有： 與多層基板形成爲一體的線圈，包含平行於該多層基 板的捲線部份以及垂直於該多層基板的捲線部份，該單位 捲線所形成之線圈面係垂直於該多層基板的線圈；及 形成在上述多層基板之一側的外面上，以及分別連接 在上述線圈的特定處所之3個以上的電極部， 上述線圈係被支持於上述多層基板內，以及 上述電極部係就上述線圈的中心軸交互形成在上述線 圈的兩側之線圈末端附近之其中一側。 6· —種可變電感元件，其特徵爲具有： 與多層基板形成爲一體的線圈，包含平行於該多層基 板的捲線部份以及垂直於該多層基板的捲線部份，該單位 捲線所形成之線圈面係垂直於該多層基板的線圈；及 形成在多層基板之一側的外面上，以及分別連接在上 述線圈的特定處所之2個以上的電極部；及 形成在上述多層基板的另一側的外面上，以及分別連 接在該線圈的特定處所之電極部，以及 形成在上述多層基板的一側之外面上的上述電極部’ 其中至少1個係設置爲延伸至與其中的其他電極部的至少 其一隔著間隙相面對的位置。 7 ·如申請專利範圍第6項所述之可變電感元件’其 中，形成在上述多層基板的另一側之外面上的上述電極部 係3個以上，以及就該線圈的中心軸交互形成在上述線圈 的兩側之線圈末端附近的其中一側。 -37- (3) (3)200406916 8 ·如申請專利範圍第1項至第4項、第6項、以及 第7項中任一項所記載的可變電感元件，其中，上述相面 對的電極部彼此係藉由導體相連接，藉此，該電極部彼此 可藉由修整而隔開。 9 ·如申請專利範圍第1項至第4項、第6項、以及 第7項中任一項所記載的可變電感元件，其中，上述線圈 的單位捲線係分別具有由與鄰接的其他單位捲線相同方向 來看時，在相互相反方向旋轉的螺旋狀圖案， 相互鄰接的該單位捲線組在上述螺旋狀圖案的前端間 或末端間係相互連接。 10 ·如申請專利範圍第1項至第4項、第6項、以及 第7項中任一項所記載的可變電感元件，其中，另外具有 由貫穿上述線圈的內部之磁性體所形成的中心構造。 1 1 ·如申請專利範圍第1項至第4項、第6項、以及 第7項中任一項所記載的可變電感元件，其中，另外具有 與上述多層基板形成爲一體的電容器，且與上述可變電感 元件導電連接。 12’ 一種可變電感元件內藏多層基板，其特徵爲具 有： 如申請專利範圍第1項至第4項、第6項、以及第7 IS中任一項所記載的可變電感元件；及 上述多層基板，以及 在上述多層基板上或者其內部支持其他的電路。 1 3 · —種半導體晶片，其特徵爲： -38- (4) 200406916 在外面積層有如申請專利範圍第1 2項所述之可變電 感元侔內藏多層基板。 1 4 · 一種晶片型可變電感元件，其特徵爲具有： 如申請專利範圍第1項至第4項、第6項、以及第7 項中任一項所記載的可變電感元件；及 上述多層基板，以及 上述多層基板係可以支持上述可變電感元件之平板。 -39-(1) (1) 200406916 Patent application scope 1 · A variable inductance element, which is characterized by having: _ a coil formed integrally with a multilayer substrate, including a coiled portion parallel to the multilayer substrate / board and vertical In the winding part of the multilayer substrate, the unit. The coil surface formed by the winding is a coil perpendicular to the multilayer substrate; and it is formed on the outer surface of one side of the above multilayer substrate, and two of them are respectively connected to a specific place of the above coil. In the above electrode portion, the coil system is supported in the multilayer substrate, and at least one of the electrode portions is provided to extend to a position facing at least one of the other electrode portions via a gap. 2. The variable inductance element according to item 1 of the scope of patent application, wherein at least one of the electrode portions is extended to a position facing at least one of the other electrode portions through a gap. An electrode portion provided in a direction parallel to the central axis of the coil and facing the electrode portion is disposed on one side of the electrode portion. 3. The variable inductance element according to item 1 of the scope of patent application, wherein at least one electrode portion extending to a position facing at least one of the other electrode portions through a gap is provided to extend Two or more electrode portions are provided in a direction parallel to the central axis of the coil, and the electrode portion faces the electrode portion, and the central axis of the coil is alternately formed on each side of both sides of the electrode portion. 4. The variable inductance element according to item 1 of the scope of patent application, wherein at least one of the electrode portions is connected to an end of the coil. -36-(2) (2) 200406916 5 · —An inductive element characterized by having a coil formed integrally with a multilayer substrate, including a winding portion parallel to the multilayer substrate and a winding portion perpendicular to the multilayer substrate. The coil surface formed by the unit winding is a coil perpendicular to the multilayer substrate; and three or more electrode portions formed on an outer surface of one side of the multilayer substrate and connected to a specific place of the coil, respectively; The coil system is supported in the multilayer substrate, and the electrode unit is alternately formed on one of the coils near the coil ends on both sides of the coil with respect to the central axis of the coil. 6 · A variable inductance element, comprising: a coil formed integrally with a multilayer substrate, including a winding portion parallel to the multilayer substrate and a winding portion perpendicular to the multilayer substrate, the unit winding being formed The coil surface is a coil perpendicular to the multilayer substrate; and two or more electrode portions formed on an outer surface of one side of the multilayer substrate and connected to a specific place of the coil respectively; and another formed on the multilayer substrate At least one of the electrode portions on the outer surface of the side and the electrode portions respectively connected to a specific place of the coil, and the electrode portions formed on the outer surface of one side of the multilayer substrate At least one of the positions facing each other across the gap. 7 · The variable inductance element according to item 6 of the scope of the patent application, wherein three or more of the electrode parts formed on the outer surface of the other side of the multilayer substrate are formed alternately with respect to the central axis of the coil One of the sides near the coil ends on the two sides of the coil. -37- (3) (3) 200406916 8 · The variable inductance element according to any one of claims 1 to 4, 6, and 7 in the scope of patent application, wherein The pair of electrode portions are connected to each other by a conductor, whereby the electrode portions can be separated from each other by trimming. 9. The variable inductance element according to any one of claims 1 to 4, 6, and 7, in which the unit windings of the coils each have an When the unit winding lines are viewed in the same direction, the spiral patterns rotating in opposite directions are mutually connected, and the unit winding groups adjacent to each other are connected between the front ends or the ends of the spiral patterns. 10 · The variable inductance element according to any one of claims 1 to 4, 6, and 7 in the scope of patent application, further comprising a magnetic body that penetrates the inside of the coil Center structure. 1 1 · The variable inductance element according to any one of claims 1 to 4, 6, and 7 of the scope of patent application, further comprising a capacitor integrally formed with the multilayer substrate, And is conductively connected with the variable inductance element. 12 'A multi-layer substrate with a variable inductance element built in, comprising: the variable inductance element according to any one of claims 1 to 4, 6 and 7 IS ; And the above-mentioned multilayer substrate, and supporting other circuits on or inside the above-mentioned multilayer substrate. 1 3 · A semiconductor wafer, characterized in that: -38- (4) 200406916 There is a multi-layer substrate with a variable inductor as described in item 12 of the patent application scope on the outer area layer. 1 4 · A chip-type variable inductance element, comprising: the variable inductance element described in any one of claims 1 to 4, 6, and 7 of the scope of patent application; The above-mentioned multilayer substrate, and the above-mentioned multilayer substrate are flat plates capable of supporting the variable inductance element. -39-
TW92124005A 2002-08-29 2003-08-29 Variable inductor device, multi-layer substrate with hidden variable inductor device, semiconductor chip and chip-type variable inductor device TW200406916A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002250950A JP2006054208A (en) 2002-08-29 2002-08-29 Variable inductance element, multilayer substrate incorporating variable inductance element, semiconductor chip and chip type variable inductance element

Publications (1)

Publication Number Publication Date
TW200406916A true TW200406916A (en) 2004-05-01

Family

ID=31972657

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92124005A TW200406916A (en) 2002-08-29 2003-08-29 Variable inductor device, multi-layer substrate with hidden variable inductor device, semiconductor chip and chip-type variable inductor device

Country Status (4)

Country Link
JP (1) JP2006054208A (en)
AU (1) AU2003261832A1 (en)
TW (1) TW200406916A (en)
WO (1) WO2004021374A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667671B (en) * 2018-09-10 2019-08-01 世界先進積體電路股份有限公司 Inductor structures
CN110139415A (en) * 2019-05-31 2019-08-16 华中科技大学 The variable circle number load coil of one kind

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8384507B2 (en) * 2010-06-01 2013-02-26 Qualcomm Incorporated Through via inductor or transformer in a high-resistance substrate with programmability
US9559053B2 (en) * 2011-04-21 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Compact vertical inductors extending in vertical planes
CN109643597B (en) * 2016-09-02 2021-08-24 株式会社村田制作所 Inductor component and power supply module
EP3618109B1 (en) * 2018-08-28 2021-11-17 Nxp B.V. Integrated passive coupler and method
US10763921B1 (en) 2019-09-11 2020-09-01 Nxp B.V. Near-field electromagnetic induction device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3186776B2 (en) * 1990-12-29 2001-07-11 ティーディーケイ株式会社 Electronic component manufacturing method
JPH04237106A (en) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> Integrated inductance element and integrated transformer
JPH056811U (en) * 1991-07-09 1993-01-29 日本電気株式会社 Inductance circuit
JPH06112655A (en) * 1992-09-29 1994-04-22 Matsushita Electric Ind Co Ltd Multilayer printed wiring board with built-in coil, and its manufacture
US5572180A (en) * 1995-11-16 1996-11-05 Motorola, Inc. Surface mountable inductor
JPH10154795A (en) * 1996-11-19 1998-06-09 Advanced Materials Eng Res Inc Inductor on semiconductor chip and its manufacturing method
JP2002198223A (en) * 2000-12-26 2002-07-12 Nec Tokin Corp Composite lc component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI667671B (en) * 2018-09-10 2019-08-01 世界先進積體電路股份有限公司 Inductor structures
CN110139415A (en) * 2019-05-31 2019-08-16 华中科技大学 The variable circle number load coil of one kind

Also Published As

Publication number Publication date
WO2004021374A1 (en) 2004-03-11
JP2006054208A (en) 2006-02-23
AU2003261832A1 (en) 2004-03-19

Similar Documents

Publication Publication Date Title
US7679925B2 (en) Method for fabricating wiring board provided with passive element, and wiring board provided with passive element
JP3800540B2 (en) Inductance element manufacturing method, multilayer electronic component, multilayer electronic component module, and manufacturing method thereof
CN100382309C (en) Molecule component
US7212095B2 (en) Inductive element and manufacturing method of the same
JP6357714B2 (en) Multilayer electronic structure with built-in filter and method for manufacturing multilayer electronic structure
US10147533B2 (en) Inductor
TW200405544A (en) Inductance element, multi-layer substrate with embedded inductance element, semiconductor chip, and chip-type inductance element
KR20050095889A (en) Multilayered substrate and manufacturing method thereof
US20120314389A1 (en) Wiring board and method for manufacturing same
TW200410376A (en) Coil-embedded with multi-layer substrate, semiconductor chip, and the manufacturing method thereof
JP3436525B2 (en) Multilayer substrate, electronic component, and method of manufacturing multilayer substrate
TW200406916A (en) Variable inductor device, multi-layer substrate with hidden variable inductor device, semiconductor chip and chip-type variable inductor device
TW200400523A (en) Inductor capacitor serial resonant circuit, board with built-in inductor capacitor serial resonant circuit, and manufacturing method of the same
JP2004127966A (en) Inductive element and its manufacturing method
JP2001298274A (en) Electronic circuit arrangement
JP4515477B2 (en) Method for manufacturing wiring board with passive element
US20090021887A1 (en) Multi-layer capacitor and wiring board having a built-in capacitor
WO2003100971A1 (en) Lc parallel resonance circuit, multilayer board incorporating lc parallel resonance circuit, and their production methods therefor
US9461607B2 (en) Balance filter
JP4529614B2 (en) Method for manufacturing printed wiring board
JP2004128153A (en) Laminated electronic part, laminated electronic part module and manufacturing method therefor
JP2004006516A (en) Inductor element and multi-layer substrate incorporating the same
JP2003017359A (en) High capacity flat capacitor element and capacitor film and capacitor sheet constituting the same