TW200403826A - Wire bonding method, wire bonding device and recording medium for recording wire bonding program - Google Patents
Wire bonding method, wire bonding device and recording medium for recording wire bonding program Download PDFInfo
- Publication number
- TW200403826A TW200403826A TW092119116A TW92119116A TW200403826A TW 200403826 A TW200403826 A TW 200403826A TW 092119116 A TW092119116 A TW 092119116A TW 92119116 A TW92119116 A TW 92119116A TW 200403826 A TW200403826 A TW 200403826A
- Authority
- TW
- Taiwan
- Prior art keywords
- lead
- wire
- point
- capillary
- arc
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 230000000630 rising effect Effects 0.000 claims description 23
- 230000007246 mechanism Effects 0.000 claims description 19
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 17
- 230000035515 penetration Effects 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 6
- 238000007665 sagging Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- 206010033799 Paralysis Diseases 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 210000003423 ankle Anatomy 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78743—Suction holding means
- H01L2224/78744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Description
200403826 玖、發明說明: 【發明所屬之技術領域】 本發明係關於打線方法、打線裝置以及 之記錄媒體,特別俦柝 ^ ^ ^ 利係控制在弟1打線點與第2打線點之 形成引線弧的打線方法、打良I … 展置以及吕己錄打線程式之記 錄媒體。 【先前技術】 广線震置,例如,係將LSI等半導體晶片之輸出入端 子等第1打線點與搭載半導體晶片的電路基板端子之第2 打線點之間,利用細金屬線連接的裝置。此情況下,第玉 打線點與帛2打線點之間’最好利用適當形狀的引線孤連 接。即,若引線弧高度過高的話,封裝體等大小將變大, 且容易導致引線下垂。若引線弧過低的話,引線恐將接觸 到半導體晶片或配線圖t。在此,為形成適當的引線弧, 故進行打線裝置的動作控制。 第4圖所示係習知技術之引線弧形成方法的步驟圖。 在弟4圖中,引線12係由未圖示的捲線軸(^丨sp〇〇i)供 應給毛細管(capillary)14。此時,利用空氣張力賦予適度 的張力。毛細管14係筒狀構件,引線丨2則插通其中空部 分’並利用引線夾具(wire clamper) 16而保持。引線夾具 16係可挾持或放開引線的構件,並與毛細管14 一起移動 。打線對象18、19係保持於未圖示的載物台上。在打線對 象18之弟1打線點2 0、與打線對象19之第2打線點21 200403826 間,形成引線弧之時,藉由以下說明的第4⑷至⑷圖 的步驟,使毛細管14對載物台上所保持的打線對象進行 相對移動’俾在引線12形成所需的變形。 第4⑷圖所示係將引線12連接於打線對象18上❹ 驟。將引線夾具16呈開放狀態俾使毛細管14下降,將引 線前端所預先形成的焊球打線於第i打線點2〇上。豆次, 如第4⑻、(c)、⑷圖之步驟,使毛細管“上升少許, 朝與第2打線點之方向的相反方向水平移動,然後再上升 。错此’引線12便形成變形部“2、24。形成變形部分 22的理由,係因為在引線前端形成焊球之際引線會硬化, 頗難從第i打線點20進行某範圍部分的變形之故。另外, 從第U線點2G至變形部分22、24的部分,係在形成引 線弧之際於第1打線點附近對應於引線12上升之所「 頸部」之部分。 ° 在第4⑷圖中,於毛細管14上升後,便如第4⑷圖 所不’朝與第2打線點之方向相反方向水平移動。藉此, 形成變形部分26。其次,如第4⑴圖所示,—邊使毛” “二升’ 一邊沿水平方向移動而到達第"丁線點20上方 。精此,形成變形部分28。此時毛細管的上升量 打線點20至變形部分28間,從毛細 12長度,係設定為相當於從第"丁線點 丨、、在 21的引線弧長度。 打線點 在第4⑴圖中’若毛細管14上升至既定高 成變形部分28的話’引線夾具16便挾持著引心。亦: 200403826 ’即使毛細管14移動,仍不致進行引線12的送出動作。 在此狀態下,將毛細管14藉由如第4(g)圖所示之圓弧運 動或圓弧運動後的下降,便移動至打線對象19的第2打線 點2卜此時第2打線點21將位於引線12之變形部分μ 處’並在此進行打線。 依此方式,在第i打線點20與第2打線點2ι之門 便形成具有變形部分2 2、2 4、2 6的引線弧3 〇。伸是二 變形部分28的變形度較弱,且為確保某種程度的引線弧3〇 高度,因此不需將變形部分26與變形部分28間的 以加長’因而在第2打線點21將呈引線弧3〇下垂狀態: 第5圖所示係另一習知技術的引線弧形成方法之 圖’相較於第4圖’可在第2打線點附近使引線弧上升. 在第5⑷至⑷圖的步驟係如第4圖所示,形成 部之步驟。 項 在第5(c)圖中’使毛細管14朝與第2打線點 的相反方向水平移動之後’在第5⑷圖中的上升量較多於 弟4圖中所示。然後,如第5(e)圖所示,使毛細管月 與第2打線點之方向的相反方向水平移動的量亦較多 4圖。因此’在此所形成的變形部分%,相較於第 不對應於變形部分26,位於較偏㈣1 近第2打線點的位置。 ^ 其次,如第5⑴圖所示,一邊使毛細管14上升_ 邊沿水平方向移動而到達第"丁線點20上方。藉此,开二 變形部分38。此時毛細管的上升量係由第i打線點2〇1 δΖΟ 變开》部分38間,從毛細管14斛、、,, H 乇S 14所迗出的引線12長度,係抑 -相當於從第1打線點2"月第 …又 度。為半聰+ 打踝”,占d的弓I線弧長 在步麵中,因為送出相當量的引線,因此在步驟 的上升置便較少。所以’變形部分36與變形部分⑽ 之間變短,其間的引線形狀將形成如圖所示弧狀。 士在第5(f)圖中,若毛細管14上升至既定高度並形 成變形部分38的話,引線夾具16便挾持著引線12,而停 止弓丨線的送出。在此狀態下,將毛細t 14藉由如第5(g) 圖所不圓弧運動或圓5瓜運動後的下降,移動至打線對象19 的第2打線點21。此時第2打線點21將位於引線丨2之變 形部分38,並在此進行打線。 依此方式’在弟1打線點2 0與第2打線點21之間, 形成具有變形部分22、24、36的引線弧4〇。此情況下, 因為變形部分36靠近第2打線點21,且變形部分36與變 形部分38之間的形狀係呈弧狀,因此相較於第4圖,在第 2打線點附近可使引線弧呈上升狀態。 1利文獻1 曰本專利特開昭63-421 35號公報(第2頁、第1圖、 第2圖) 皇利文獻2 曰本專利特開平4-318943號公報(第3-4頁、第2圖) ί利文獻3 曰本專利特開平1 0-189641號公報(第2-4頁、第1-7 200403826 【發明内容】 仁疋,在習知之引線弧形成方法,第2打線點的變形 口P刀麦形度較弱,引線弧在第2打線點處的上升部分將略 呈下垂狀態’恐將接觸到打線對象。當第2打線點為電路 基板等的引腳時’即使在第2打線點附近產生引線弧下垂 ’僅接觸到欲打線的引腳,所以問題較少。相對於此,第 2打線點係、LSI等元件上的情況、或使引線弧極低的小型 或薄型封裝體的情況時’第2打線點附近的引線弧下垂恐 將產生無法預期的短路。 再者若毛、、’田答保持引線並依圓弧運動等移動至第2 打線點之際’引線弧下垂而接觸到打線對象的話,此相反 動作會使引線弧形狀變形的危險性。此外,在帛2打線點 附近會引起引線弧倒塌的可於 ^ ^ J只旳了月匕性,而且恐將局部分的引線 弧擠押入毛細管的中空部内。 再者,當引線送出至盥第2杆始 -、禾Z打線點對應之變形部分(第 4圖之28、第5圖之38)之際,闵盔主4 μ 一 ’、口為毛細管將停止於既定 高度,利用引線夾具停止引綠沾、、,, 、斤此Μ線的运出,並將此作為變形部 分’因此引線弧整體長度及第? 士 X久弟2打線點附近的上升部分長 度將無法穩定。其理由係因為车 口馮毛細官的中空部與引線之間 會有摩擦的情況,此外,對引飨時名、在* 〇 了 51線H予適度張力的空氣張力 亦有偏差,即使毛細管停止於既定古 ^ + 兄疋回度,引線的送出量亦 無法一定之故。 如此,在習知技術的引線弧形 _ . , ^成方法中,引線弧恐將接 觸到打線對象’因而無法穩定地形 成引線弧的高度或形狀。 200403826 你担有4孤於斯’本發明為解決習知技術的問題,其目的在 於提供防止引線弧接觸彳 及打線程式。本發明之;=方法、打線裝置 矿一从 月之另一目的在於提供可穩定形成引線 弧形狀的打線方法、打線裝置及打線程式。 :達成上述",本發明的打線方法,係使插通並保 持引線的毛細管,對才娩 一 、、在對象進订相對移動而使引線變形 …1打線點與第1打線點以引線弧連接,其特徵係 具備以下步驟: ^ 頸部形成步驟,在將引線連接於第"丁線點之後,於 苐1打線點使引線上升而形成頸部; …\^ v驟’—邊运出相當於從該弓I線弧總長扣除 之長度份量的引線,一邊使該毛細管從該頸部上 升’接者使該毛細管朝裳9 :h*綠机+人a 弟1打線點方向移動,而形成位於 第1打線點之引線第丨變形部分; 弟2變形步驟,伟与^ 便°亥毛細官下降,並將相當於在第2 打線點處上升部分之長度的引線,收入該毛細管中,接著 使該毛細管朝與該第2打線點相反側的方向移動,而在第 1 打線點的引線上升部分頂點處形成第2變形部分;以及 引線弧形成步驟,使該毛細管上升,並送出引線直到 該第1變形部分到達該毛細管前端位置,且在此狀態下保 持引線’使該毛細管移動至該第2打線點,俾在引線的該 第1變形部分連接第2打線點,而形成引線弧。 藉^上述構成,在頸部形成後接著送出既定量的引線 ’而在第1打線點處預先形成第1變形部分,然後收入既 200403826 定量的引線而形成第2變形部分。因此,由於 點處限定上升部的箆〗 、 打線 ,„ 弟1變形部分、第2變形部分將磕眘从 呈變形狀態,因此可阶,?丨A 刀將確實地 垂而接_#_^ 在第2打線點附近產生下 接㈣打線對象的情形發生。此外,因 -弓丨線弧形狀的頸部、帛變、疋 置呈-定,故可籍… 文小°『刀弟2變形部分的位 文了 t疋形成引線弧形狀。 再者二本發明的打線裝置,係具備: 毛細官,係插通並保持引線; 載物台,係保持打線對象; 移動機構,传佶兮 以及 係使4毛細管對該載物台進行相對移動; 引線弧形成控制機構,係控 該引線的伴捭,曰* — i 吕的相對移動與 呆持且在该打線對象的第丨打線點盥 點間形成引線弧並加以連接; 、’ · /、 打線 該引線弧形成控制機構係執行以下步驟. 頸部形成處理步驟,在將引線連接 ’於第"T線點處將引線上升而形成頸部;.T線點之後 第1變形處理步驟,—邊送出相#於從 該頸部後之長度份量的引線,一邊使該毛細管 :上升’接著使該毛細管㈣2打線點方向移動,= 於弟2打線點之引線第1變形部分; 第2變形處理步驟’使 弟2打線點處上升部分 田於在 拯荽4〜 長度的引線,收入該毛細管中, 接者使该毛細管朝遠離該第2打線點方向移動,而在第中2 薦403826 打線點的引線上升部分頂點處形成第2變形部分;以及 引線弧形成處理步驟,使該毛細管上升,並送出引線 J X第1交形部分到達該毛細管前端位置,且在此狀態 二=引線,使該毛細管移動至該第2打線點,俾在引線 的该第1變形部分連接第2打線點,而形成引線弧。 ^者’本發明的記錄打線程式之記錄媒體,該打線程 式係控制打線裝置的動作;該打線裝置係具備:毛細管, 保持:線載物台,係保持打線對象;移動機構 成㈣:毛細官對該載物台進行相對移動;以及引線弧形 成=機構,係控制該毛細管的相對移動與該引線的保持 ':線對象的第1打線點與第2打線點間形成引線 弧並加以連接; 該引線弧形成控制機構係執行以下步驟: ,”員;了:處理步驟’在將引線連接於第1打線點之後 於打線點處將引線上升而形成頸部; 扣除^二形處理步驟’—邊送出相當於從該51線弧總長 :長度份量的引線,-邊使― 好第ηΓ 細管朝第2打線點方向移動,而形成 ;第2打線點之引線第1變形部分; 第處理步驟,使該毛細管下降,並將相當於在 接著使上升部分之長度的引線,收人該毛細管中, 打:=Γ朝遠離該第2打線點方向移動,而在第2 ” 線上升部分頂點處形成第2變形部分.以及 引線弧形成處理步驟,使該毛細管上升,並送出引線 12 200403826 直到該第1變形部分到達該毛細管前端位置,且在此狀態 下保持引、線’使該毛細管移動至該帛2打線點,俾在引線 的該第!變形部分連接第2打線點,而形成引線弧。 以下,利用圖式針對本發明之實施形態進行詳細說明 另外,在下述圖式中’與第4圖、第5圖相同的元件賦
予相同的元件符號’並省略詳細說明。第1圖所示係打線 裝置50的方塊圖。打線裝置5〇係具備:引線12供應源的 捲線轴U、插通有引線12的毛細管14、扶㈣開放㈣ 12的引線夾具16、保持打線對象18、19的載物台17、使 毛細管14與引線夾呈1 —騁欲& A < /、 體移動的毛細管移動機構52、 使載物台1 7移動的截物a孩命拖r ^ 夕切旧戰物口移動機構54、以及控制該等構 成要件的動作之控制裝置56。 牡罘1園甲,引線
/此時m氣張力賦予適度張力。引線可採月 米的金屬線。毛細管14係筒狀構件,引線丨丨 16係刀並利用引線夾具16而保持。引線攻 σ μ係可挾持或放開料的構件,與毛細管u -起㈣ :由於毛細官14與引線夾具16係互動並使引線12 動:因此該區塊例如亦可稱為廣義的毛細管或毛細管部 羞下僅虽毛細官插通並保持引線進行處理時,才々 義的毛細管(包括狹義的毛細管與引線夾具)。 曰 载物台17係可沿水平方向移動的ΧΥ台,可在上面 13 18 200403826 18 200403826 置用以保持打線對象 、19固定於载物台 技術。 18、19的治且裳 /、 °在將打線對象 17上面之方面, 附 J〒木用例如真空效 毛細管移動機構52係使毛細管部 近(離開)方6、隹+载物台17朝為 二:對移動的機構,例如可採用使毛細管 邛13對载物台17沿垂直的z方向 a銘叙她樣c 移動之伺服馬達。載物 口移動機構54係使载物台丨7相對 古a品出w 了於毛細官部13,在水平 °内進行相對性移動的機構,例如m γ @ # &
17上面平行的而A_ 才木用在與載物台 上分別执置/ 方向之Χ軸方向及Υ軸方向 動機二 達。毛細管移動機構52與載物台移 ==可一體化’使毛細管部13可相對於載物台” /σ υζ —軸方向進行相對移動的機構。
控制裝置56係有關引線弧的形成控制,包含有··在打 線對象18的第1ίτ線點處’控制形成引線上升之頸部的頸 部形成處理部6G;在打線對象19之第2打線點處,控制 引線上升部分之變形的第1變形處理部62與第2變形處理 4 64 ’以及進行使引線朝第2打線點形成弧狀之控制的弧 狀形成處理部66。控制裝置56係具有引線夹具Η對引線 的挾持或放開之控制、載物台17對打線對象18、Μ的保 持或放開之控制等功能。 控制裝置56可由電子電路之類的硬體所構成,亦可由 執行控制私式的電腦所構成。控制程式係例如可包含有下 述步驟· 形成處理步驟、第丨變形處理步驟、第2變形 處理步驟、以及弧狀形成處理步驟等。控制程式可内建於 14 控制裝置56,或者可。山a 的媒體進行讀取,而f己錄有控制程式的電腦從可讀取 句I载於控制裝置56。 第的引線弧形成控制料,參照 20、與打線對象19之第' ’在打線對象18之第1打線點 態,係藉由以下所★兒明弟的,線點21之間形成引線弧之形 咖台上所;=/(a)〜⑴㈣ 12形成必要的^ 線對象進行相對移動,俾使引線
2〇, 圖之步驟係在打線對象18之第1打線點
Zu ’开> 成使引繞! 9 線!2連接於打線對象^之頸部的步驟。第2(a)圖係將引 狀態俾使毛細管14下降上:步驟,將引線夾具16呈開放 下降,將引線前端所預先形成的焊球 =弟1打線點2〇上。其次,如第_、⑷、⑷圖 人使毛細官14上升少許,朝與第2打線點之方向的 /告八向尺平移動’然後再上升。藉此引、線1 2便形成變
形口P刀22、24,當形成引線弧後,便形成第1打線點20 的引線12上升部分的頸部。 卜第2(d)圖的步驟係將在下一步驟第2(e)圖中所形成的 第1變形部分之位置設定於引線上。在第2(c)圖中形成頸 :的變形部分24之後,使毛細管14從變形部分24起上升 第1既定里。第1既定量係相當於第1打線點20至第2打 線”、占21形成弧狀而連接的引線弧總長,扣除頸部之引線 長度後的量。即,第2(d)圖之毛細管14最高位置處的毛 細官14則端引線的位置,係對應於形成引線弧之際的第2 15 200403826 打線點的位置。 第2(e)圖係在第2打線點處形成 變形步驟。使在第2((0圖中已上 【刀的第i ’朝第2打線…向移動。藉此在形 2打線點位置處,引線將確實 際的第
又V 此經變形之与丨始AA 部分稱為「第1變形部分7 8」。 v' 、 第2(f)圖的步驟係將在下一 咏 v驟弟2(g)圖中所形成之 第2變形部分之位置設定於引線 不丄任弟2(e)圖中於引狳 上形成第1變形部分之後,使毛 、崃 窃 使乇、、、田g 14 一邊下降第2既定 …邊沿水平方向移動至第"丁線點2〇上方。因此,引 線係被毛細管u收人第2既定量的長度。第2既定量係相 當於第2打線點21處之上升部分長度的量。即,第2(f) 圖中最低位置處的毛細;f 14前端位置,係對應於形成引 線弧之際的第2打線點處上升部分之頂點位置。 第2(g)圖係第2打線點之上升部分頂點處,形成第2 變形部分的第2變形步驟。在第2(f)圖中,經下降第2既 定里的毛細官14,係朝與第2打線點相反側之方向移動。 此移動量係大於步驟(c)、(e)中的移動量。藉此移動,在 形成引線弧之際的第2打線點處上升部分的頂點位置處, 引線將確實地變形。此經變形後之引線的部分稱為「第2 變形部分76」。 第2(h)圖的步驟係將引線的第1變形部分78位置對 位於毛細管14前端。在第2(g)圖形成第2變形部分76之 後’使毛細管14 一邊上升一邊沿水平方向移動至第1打線 16 200403826 :2〇上方。此時,因為引線係從毛細管送出,因此當第! 交幵刀78位置到達毛細管14前端時,便停止毛細管μ 的上升ϋ由引線夾具i 6挟持著引線並停止送出引線。 ▲此時’精由毛細管14沿水平方向的移冑,引線便將第 1产形部分78與第2變形部分76作為變形點而確實的變 形。如此,在%成引線弧之際於帛2 #線點處的上升部分 ’便形成第1變形部分78與第2變形部分76之間的直線 上升部分,俾可防止引線下垂。
第2(i)圖的步驟係將引線連接於帛2 ^線點而形成引 在第2(h)圖中將第!變形部分78對位於毛細管14 則端之後’在此狀態下,使毛細f 14經圓弧運動或圓弧 運動後的下降,而移動至打線對象19的帛2打線點21。 此時引線12的第!變形部> 78係位於第2打線點21,然 後進行打線。 如此,在引線上預先形成第2打線點之第丨變形部分 的位置’然後將引線收人既定量而形成第2打線點之引線 上升部分頂點的第2變形部分,藉此第丨變形部分、第2 變形部分可在既定位置處確實的變形。因此,可防止引線 弧在第2打線點附近下垂而接觸到打線對象的現象,且可 穩定地形成引線弧形狀。 另外,亦可按照引線弧長度、打線對象高度等,而在 第1變形部分、第2變形部分以外的地方進行適當的變形。 第3圖所示係採用實施形態之打線裝置,對打線對象 實施打線的例子。第3⑷圖係設置有第"丁線點2〇的打
17 200403826 線對象18為電路基板,而設置有第2打線點2i的打線對 象19為LSI晶片(DIE)的例子。此情況下,因為在第2打 線點21附近,引線弧8 0將不致產生下垂現象,因此可防 止LSI晶片與引線弧產生接觸的情形。此外,因為可依較 低線弧高度穩定地形成引線孤形狀,因此可形成更小型、 更薄型的封裝體。 第3(b)圖係設置著第1打線點20的打線對象18為電 路基板,而設置著第2打線點21的打線對象19為所謂r 堆豐式晶片」的雙層LSI晶片中,上層側的LSI晶片(DIE) 癱 例子。此情況下,第2打線點21處的引線弧下垂現象,雖 較第3(a)圖之情況,比較可能形成較大的問題。但是,在 本發明的實施形態中,因為於第2打線點21附近引線弧 80將不致下垂,因此可防止發生LSI晶片與引線弧的接觸 現象。此外,因為能以較低引線弧高度穩定地形成引線弧 形狀,因此可提高集積度且可形成更小型、更薄型的封裝 體。 (發明之效果) ® 依本發明的打線方法、打線裝置、及打線程式,可防 止引線弧接觸到打線對象。又,依本發明的打線方法、打 線裝置、及打線程式,可穩定地形成引線弧形狀。 【圖式簡單說明】 (一)圖式部分 第1圖係本發明之實施形態的打線裝置方塊圖。 18 200403826 第2(a)〜(i)圖係本發明之實施形態的引線弧形成控制 之示意圖。 第3(a)〜(b)圖係本發明之實施形態中,採用打線裝置 姆打線對象實施打線的圖例。 第4(a)〜(g)圖係習知技術的引線弧形成方法之步驟圖 第5(a)〜(g)圖係另一習知技術的引線弧形成方法之+ 驟圖。 乂 (二)元件代表符號 11 捲線軸 12引線 13 毛細管部 14 毛細管 16引線夾具 17 載物台 18、1 9打線對象 20第1打線點 21第2打線點 22 24 ' 26 ' 28、36、38 變形部分 30、40、80引線弧 50 打線裝置 52 毛細管移動機構 載物台移動機構 56 控制裝置 19 200403826 60 頸部形成處理部 62 第1變形處理部 64 第2變形處理部 66 弧狀形成處理部 76 第2變形部分 78 第1變形部分
20
Claims (1)
- 200403826 拾、申請專利範圍: 1· 一種打線方法,係使插通並保持引線的毛細管,對 2線對象進行相對移動而使引線變形,並將第丨打線點與 第2打線點以引線弧連接,其特徵係具備以下步驟: #頸部形成步驟,在將引線連接於帛1打線點之後,於 第1打線點使引線上升而形成頸部; 弟1變形步驟,一邊送出相當於從該引線弧總長扣除 該頸部後之長度份量的引線,一邊使該毛細管從該頸部上 !,接著使該毛細管朝第2打線點方向移動,而形成位於 弟2打線點之引線第1變形部分; 第2變形步驟,使該毛細管下降,並將相當於在第2 打線點處上升部分之長度的引線,收入該毛細管中,接著 使該毛細管朝與該帛2打線點相反側的方向移動,而在第 2打線點的引線上升部分頂點處形成第之變形部分,·以及 引線弧形成步驟,使該毛細管上升,並送出引 否亥弟1變形部分到读兮车纟m总乂山 姓心 官月_』端位置,且在此狀態下保 持引線,使該毛細管移動至該第2打線 第卜變形部分連接第2打複 ”纟在引線的該 刀遝接弟2打線點’而形成引線弧。 2· —種打線裝置,係具備: 毛細管,係插通並保持引線; 載物台,係保持打線對象; 以及 移動機構,係使該毛細管對該载物台進行相對移動; 广Ό·:, 21 200403826 該引線的保持,且在該打線對象 點間形成線弧並加以連接; 7線點與第2打線 該引線弧形成控制機構係執行以下步驟. 頸部形成處理步驟,在將引線連接:第: ,於第1打線點處將引線上升而形成頸部’· 了線點之後 第1變形處理步驟,一邊祛 扣除該頸邱# βI^胃 、目§於從該引線弧總長 ^亥以後之長度份量的引線,— 部上升,接著使該毛細管 ^田 位於川較㈣㈣,而形成 第2::二處理步驟’使該毛細管下降,並將相當於在 乐Z打線點處上升部分之县 接著# 又的引線,收入該毛細管中, 打線官朝遠離該第2打線點方向移動,而在" Π;部分頂點處形成第2變形部分;以及 直到該第^开處Λ步驟’使該毛細管上升,並送出引線 下保持引線'使;達:毛細管前端位置,且咖 的該第1變形部分連接=動至該第2打線點,俾在引線 ,^ 77接弟2打線點,而形成引線弧。 ό · 一種記錄h ρ 打線裝置的動*、王’之記錄媒體’該打線程式係控制 保持引線Γ :該打線裝置係具備:毛細管,係插通並 毛細管對,心台’係保持打線對象;移動機構,係使該 構,传^ΐ進行相對移動;以及引線弧形成控制機 打線對象的第丨 對移動與該引線的保持,且在該 連接; 打線點與第2打線點間形成引線弧並加以 22 200403826 ▲ W線弧形成控制機構係執行以下步驟·· j部形成處理步驟,在將引線連接於第丨打線點之後 ,於第1打線點處將引線上升而形成頸部; ’’’ 第i變形處理步驟,-邊送出相當於從該引線弧總長 扣除3亥頊部後之長度份量的引線,一 7^ 透使忒毛細管從該頸 邛上升,接者使該毛細管朝第2 ^ ^ ^ 9 + . L 玎琛點方向移動,而形成 位於第2打線點之引線第丨變形部分,· 弟2變形處理步驟,使今 μ 笛9 Η, V老 使該毛細官下降’並將相當於在 弟2打線點處上升部分 接英料n w *度的引線’收人該毛細管中, 者使该毛、,,田&朝运離該第2打線點方向 打線點的引線上升部分了w 動而在弟2 刀頂點處形成第2變形部分·以及 引線弧形成處理步驟成 爻^哔刀,以及 直到該第1變形部分到、告# 上升並运出引線 的該第1變形部分連拯笛〇 打線點’俾在引線 要第2打線點,而形成引線弧。 拾壹、圊式: 如次頁。 23
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002246119A JP3685779B2 (ja) | 2002-08-27 | 2002-08-27 | ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディングプログラム |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200403826A true TW200403826A (en) | 2004-03-01 |
TWI264100B TWI264100B (en) | 2006-10-11 |
Family
ID=31972404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW092119116A TWI264100B (en) | 2002-08-27 | 2003-07-14 | Wire bonding method, wire bonding device and recording medium for recording wire bonding program |
Country Status (4)
Country | Link |
---|---|
US (1) | US7014095B2 (zh) |
JP (1) | JP3685779B2 (zh) |
KR (1) | KR100559797B1 (zh) |
TW (1) | TWI264100B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4106039B2 (ja) * | 2003-06-27 | 2008-06-25 | 株式会社新川 | ワイヤボンディング方法 |
US7494042B2 (en) * | 2003-10-02 | 2009-02-24 | Asm Technology Singapore Pte. Ltd. | Method of forming low wire loops and wire loops formed using the method |
TWI263286B (en) * | 2004-02-06 | 2006-10-01 | Siliconware Precision Industries Co Ltd | Wire bonding method and semiconductor package using the method |
JP2007019415A (ja) | 2005-07-11 | 2007-01-25 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4881620B2 (ja) | 2006-01-06 | 2012-02-22 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
US7780064B2 (en) * | 2006-06-02 | 2010-08-24 | Asm Technology Singapore Pte Ltd | Wire bonding method for forming low-loop profiles |
MY152355A (en) | 2011-04-11 | 2014-09-15 | Carsem M Sdn Bhd | Short and low loop wire bonding |
JP2011244022A (ja) * | 2011-09-09 | 2011-12-01 | Renesas Electronics Corp | 半導体装置の製造方法 |
MY181180A (en) | 2011-09-09 | 2020-12-21 | Carsem M Sdn Bhd | Low loop wire bonding |
US9093515B2 (en) * | 2013-07-17 | 2015-07-28 | Freescale Semiconductor, Inc. | Wire bonding capillary with working tip protrusion |
JP6644352B2 (ja) | 2017-09-27 | 2020-02-12 | 日亜化学工業株式会社 | 半導体装置及びその製造方法 |
JP7386526B2 (ja) | 2020-02-26 | 2023-11-27 | 株式会社新川 | ワイヤボンディング装置及びワイヤボンディング方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6342135A (ja) | 1986-08-08 | 1988-02-23 | Shinkawa Ltd | ワイヤボンデイング方法 |
JP2883463B2 (ja) | 1991-04-17 | 1999-04-19 | 株式会社東芝 | ワイヤボンディング装置 |
JP3189115B2 (ja) * | 1996-12-27 | 2001-07-16 | 株式会社新川 | 半導体装置及びワイヤボンディング方法 |
JP3333413B2 (ja) * | 1996-12-27 | 2002-10-15 | 株式会社新川 | ワイヤボンディング方法 |
JP3455092B2 (ja) * | 1997-10-27 | 2003-10-06 | 株式会社新川 | 半導体装置及びワイヤボンディング方法 |
JP3377747B2 (ja) * | 1998-06-23 | 2003-02-17 | 株式会社新川 | ワイヤボンディング方法 |
US6176416B1 (en) * | 1999-07-02 | 2001-01-23 | Advanced Semiconductor Engineering, Inc. | Method of making low-profile wire connection |
US6391759B1 (en) * | 2000-04-27 | 2002-05-21 | Advanced Semiconductor Engineering, Inc. | Bonding method which prevents wire sweep and the wire structure thereof |
JP2002280414A (ja) * | 2001-03-22 | 2002-09-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
-
2002
- 2002-08-27 JP JP2002246119A patent/JP3685779B2/ja not_active Expired - Fee Related
-
2003
- 2003-07-14 TW TW092119116A patent/TWI264100B/zh not_active IP Right Cessation
- 2003-08-07 KR KR1020030054546A patent/KR100559797B1/ko active IP Right Grant
- 2003-08-26 US US10/647,968 patent/US7014095B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20040041008A1 (en) | 2004-03-04 |
JP3685779B2 (ja) | 2005-08-24 |
KR20040018918A (ko) | 2004-03-04 |
US7014095B2 (en) | 2006-03-21 |
KR100559797B1 (ko) | 2006-03-10 |
JP2004087747A (ja) | 2004-03-18 |
TWI264100B (en) | 2006-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200403826A (en) | Wire bonding method, wire bonding device and recording medium for recording wire bonding program | |
US7584881B2 (en) | Low loop height ball bonding method and apparatus | |
TW200414383A (en) | Wire loop, semiconductor device having same, wire bonding method and wire bonding apparatus | |
US20150249063A1 (en) | Wire-bonding apparatus and method of manufacturing semiconductor device | |
JP2005039192A (ja) | 半導体装置及びワイヤボンディング方法 | |
TW473884B (en) | Wire bonding method and apparatus | |
JP2004014884A (ja) | ボンディングワイヤー | |
WO2005018864A2 (en) | Capillary with contained inner chamfer | |
JP3981024B2 (ja) | コネクタへの自動端子挿入装置 | |
US6595400B2 (en) | Wire bonding apparatus | |
JP4369401B2 (ja) | ワイヤボンディング方法 | |
TW200849432A (en) | Method of forming bends in a wire loop | |
JP2005123499A (ja) | ボンディングワイヤーおよびそれを使用した集積回路デバイス | |
JP4744238B2 (ja) | ワイヤの切断方法 | |
JP2007214337A (ja) | ワイヤボンディング方法および半導体装置 | |
TW403981B (en) | Wire bonding method for integrated circuit die | |
JP7386526B2 (ja) | ワイヤボンディング装置及びワイヤボンディング方法 | |
TWI827950B (zh) | 打線接合裝置及半導體裝置的製造方法 | |
TWI802880B (zh) | 打線接合裝置以及打線接合方法 | |
WO2022259328A1 (ja) | ワイヤボンディング装置及びワイヤボンディング方法 | |
JP2894344B1 (ja) | ワイヤボンディング方法 | |
JP2645014B2 (ja) | ワイヤボンディング装置 | |
JPH0461134A (ja) | 半導体製造装置 | |
JPH0737930A (ja) | ボンディング装置及びバンプ形成方法 | |
JPH08316260A (ja) | ワイヤボンディング方法および半導体製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |