TW403981B - Wire bonding method for integrated circuit die - Google Patents

Wire bonding method for integrated circuit die Download PDF

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Publication number
TW403981B
TW403981B TW088111228A TW88111228A TW403981B TW 403981 B TW403981 B TW 403981B TW 088111228 A TW088111228 A TW 088111228A TW 88111228 A TW88111228 A TW 88111228A TW 403981 B TW403981 B TW 403981B
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Taiwan
Prior art keywords
wire
point
convex ball
solder joint
ball
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TW088111228A
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Chinese (zh)
Inventor
Yu-Fang Tsai
Su Tao
Shih-Wen Lee
Tao-Yu Chen
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Advanced Semiconductor Eng
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Priority to TW088111228A priority Critical patent/TW403981B/en
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Publication of TW403981B publication Critical patent/TW403981B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
    • H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
    • H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
    • H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
    • H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
    • H01L2224/48511—Heat affected zone [HAZ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85051—Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

A kind of wire bonding method for integrated circuit die which comprising: sintering the wire to form a conductive ball on the capillary; dropping the capillary to the second pad for ball bonding; lifting the capillary and cutting the wire to form a vertical pillar tail with stable shape on the conductive ball for the following wiring process. The method allows larger offset range between the capillary dropping path and the vertical line of conductive ball tail so that the second weld could have larger welding processing window.

Description

403981403981

五、發明說明（1) 【發明領域】 本發明係有關於一種積體 別是有關於在第二焊墊上形 ball 〇r bump〕之方法、該 一致的球體及該凸球或凸魂 【先前技術】 電路晶片之打線連接方法，特 成凸球或凸塊〔conductive ' 凸球或凸塊具有一形狀及大小； 另具有一垂直柱體狀之尾端。-； 習用打線技術上為了避免打線鋼嘴碰撞或觸擊焊墊而造 成該焊墊受損，鋼嘴以不碰觸該焊墊的方式在該焊墊上先 行而形成一 6球，因而在該凸球上再進行打線，使打線鋼 嘴祇碰觸於該凸球上。然而，形成該凸球必須包含以下步 驟：在鋼嘴上形成凸球步驟〔baU f〇rmati〇n〕；在焊墊 上焊球步驟〔ball bonding〕；在焊墊上移動壓印步驟 〔stitch bonding〕；及該鋼嘴進行拉扯步驟〔wire 一 cutting 〕。 - 習用打線方法’於1994年7月12日頒予馬瑟魯 〔Mathew〕等人之美國專利第5, 328, 〇79號揭示一種 電路晶片之打線連接方法，該方法係在該焊墊上先行而形 ，一凸球。請參照第一圖所示’該美國專利第5，3 2 8，〇 7 9 號於一基板100上置一晶片110形成一第二焊點，該第二焊 點位於一焊墊1丨i上，一鋼嘴12〇則在該第二焊點進行焊 球’使該晶片110不致受到該鋼嘴120碰觸而受損》該鋼嘴 120在開口之導線一端燒結成—凸球12ι。此時，該夾頭 130位於閉合狀態。 請再參照第二圖所示，該鋼嘴120下降至該第二焊點V. Description of the invention (1) [Field of the invention] The present invention relates to a method for forming a ball on a second pad, a uniform sphere, and the convex ball or convex soul [previously] Technology] The method of wire bonding of circuit chips, specially formed bumps or bumps [conductive 'bumps or bumps have a shape and size; and have a vertical cylindrical end. -; In order to avoid the damage of the welding pad caused by the collision or hitting of the welding pad by the conventional wire bonding technology, the steel nozzle first forms a 6 ball on the pad without touching the pad, so Threading is then performed on the convex ball, so that the steel wire mouth only touches the convex ball. However, the formation of the convex ball must include the following steps: a step of forming a convex ball on the steel tip [baU f〇rmati〇n]; a step of ball bonding on the pad [ball bonding]; and a step of moving the pad on the pad [stitch bonding] ; And the steel mouth performs a pulling step [wire-cutting]. -Conventional wire bonding method 'U.S. Patent No. 5,328, 〇79 issued to Mathew et al. On July 12, 1994 discloses a wire bonding method for circuit chips. This method is performed on the pad first. Shaped, a convex ball. Please refer to the first figure, 'The US Patent No. 5, 3, 28, 079 is a wafer 110 formed on a substrate 100 to form a second solder joint, and the second solder joint is located on a solder pad 1 i On the other hand, a steel nozzle 120 is welded at the second solder joint to prevent the wafer 110 from being damaged by the touch of the steel nozzle 120. The steel nozzle 120 is sintered at one end of the open wire into a convex ball 12m. At this time, the collet 130 is in a closed state. Please refer to the second figure again, the steel nozzle 120 descends to the second welding point

第4頁 403981 五、發明說明（2) ‘ 上’使該鋼嘴1 2 0之凸球1 2 1底部黏貼於該焊墊1 11上而形 成一凸球121，此時，該鋼嘴120不碰觸於該焊墊111。此. 時’該夾頭1 3 0位於開啟狀態。 _ 請再參照第三圖所示，該鋼嘴1 2 0往該凸球1 2 1側邊移位 使該凸球1 2 1尾端連接線1 2 2往側邊傾斜，及該鋼嘴1 2 0往、-: 下移動施壓使該凸球121尾端連接線122被鋼嘴頭 〔capiUary t i p〕重壓而形成一細頸部。此時，該夾頭 1 3 0位於開啟狀態。 晴再參照第四及五圖所示’該鋼嘴12〇往上移動 4 ’該夾頭130閉合狀態而夾緊導線，因而使連接該凸球 121尾端122導線之細頸部被扯斷。因此，在該烊墊Hi之 凸球121形成一尾端122導線且該尾端122具有特定傾斜的 方向性及壓塌形狀。由於該尾端丨22具有特定傾斜的方向 性及壓塌形狀，而使進行第二焊線時必須在打線位置 入與該方向性及壓塌形狀有關的校準參數〔如偏移量 使得打線具有-定的品質及可靠度。《而，該尾端i22f 球體所具有W向性及形;^並非_ &，及對個另"丁線分別 2校準參數具有實際上不可行，因而利用同— 進/打線時，無法確實控制所有焊接品質而 降低產品可靠度。 有鑑於此，本發明改良上述之諸 凸球進行焊球後，直接進行拉扯使該凸球 3 ^上將 及高度相近的垂直柱體狀的尾端，且在騎二】 時在該凸球之球體上進行打線’纟所產生的焊接Page 4 403981 V. Description of the invention (2) 'Up' causes the convex ball 1 2 1 of the steel mouth 1 2 0 to be adhered to the pad 1 11 to form a convex ball 121. At this time, the steel mouth 120 Do not touch the bonding pad 111. At this time, the chuck 130 is in the open state. _ Please refer to the third figure again, the steel nozzle 1 2 0 is shifted to the side of the convex ball 1 2 1 so that the connecting end of the convex ball 1 2 1 is inclined to the side, and the steel mouth 1 2 0 to move downwards and apply pressure to cause the connecting line 122 at the end of the convex ball 121 to be pressed by a capiUary tip to form a thin neck. At this time, the chuck 130 is in the open state. Qing again, referring to the fourth and fifth figures, 'the steel nozzle 12o moves up 4', the chuck 130 is closed to clamp the wire, so that the thin neck connected to the tail 121 and 122 wire of the convex ball 121 is torn. . Therefore, a tail end 122 is formed on the convex ball 121 of the pad Hi, and the tail end 122 has a specific inclined directivity and a collapsed shape. Because the tail end 22 has a specific inclined directivity and a collapsed shape, when performing the second bonding wire, a calibration parameter related to the directivity and the collapsed shape must be entered at the wire position (such as the offset amount makes the wire have -Fixed quality and reliability. "However, the tail i22f sphere has W-direction and shape; ^ is not _ & and the other two quoting lines have calibration parameters that are not practically feasible. Therefore, when using Reliably control all welding quality and reduce product reliability. In view of this, the present invention improves the above-mentioned convex balls and performs soldering, and then directly pulls the convex balls 3 ^ and the vertical cylinder-shaped tail ends close to the height, and when riding the second ball on the convex balls Welding on the sphere

五、發明說明（3) 適當減小，使 度。 【發明概要】 本發明之主 方法，其在第 使该凸球具有 行第二打線時 凸球提供較小 的產品可靠度 根據本發明 含：在鋼嘴上 焊點進行焊球 成形狀及大小 其中形狀及大 接變異性。 本發明凸球 範圍，且能維 【囷式說明】 為讓本發明 易懂，下文特 作詳細說明如 第1圖：習 驟之示意圖； 第2圖：習 其具有較大的焊接工作範圍而提高產品可靠 要目的係提 二焊點上將 局度相近且 在該凸球之 焊接變異性 〇 積體電路晶 將打線燒結 ，及該鋼嘴 —致的球體 小一致的該 進行第二打 持同等的打 之上述和其 舉本發明之 下： 用美國專利 用美國專利 403981 供一種積體電路晶片之打線連接 凸球進行焊球後’直接進行拉扯 形狀穩定的垂直狀尾端’且在進 球體上進行打線’因形狀穩定的 ’而使本發明第·一打線具有較佳 片之打線連接方法’該方法係包 形成一凸球；該鋼嘴下降至第二 上升拉扯導線斷裂而在凸球上形 及高度相近的垂直柱體狀尾端， 球體供進行第二打線時較小的焊V. Description of the invention (3) Appropriately reduce the degree. [Summary of the invention] The main method of the present invention is to provide a small product reliability when the convex ball is provided with a second wire. According to the present invention, the shape and size of the solder ball are welded on a steel nozzle. Among them shape and large connection variability. The scope of the convex ball of the present invention can be maintained. [Explanation of the formula] In order to make the present invention easy to understand, the following detailed description is given in detail as in Fig. 1: a schematic diagram of steps; Fig. 2: Xi has a large welding work range and The main purpose of improving the reliability of the product is to improve the reliability of the two solder joints and the soldering variability of the convex ball. The integrated circuit crystal will be sintered, and the steel nozzle and the sphere are small. Equivalent to the above and the present invention: U.S. patent US 403981 is used to provide a wire bonding bump for integrated circuit wafers. After solder balls are soldered, the shape-stabilized vertical tail ends are pulled directly and the Threading is performed on the sphere 'because the shape is stable', the first wire of the present invention has a better wire connection method. The method is to form a convex ball; the steel nozzle is lowered to the second rising and the wire is broken and the wire is broken. Convex spheres and vertical cylinder-shaped tails with similar heights. The spheres are used for smaller welding during the second wiring.

C 線時，可以允許較大的焊接施打 線品質0 他目的、特徵、和優點能更明顯 較佳實施例’並配合所附圖式， 第5, 328, 079號打線連接第—步 第5, 328, 079號打線連接第-步For line C, a larger welding line quality can be allowed. Other purposes, features, and advantages can be more obvious. The preferred embodiment, and in accordance with the drawings, No. 5, 328, 079 wire connection step-step 5 , 328, 079 wire connection step-

第6頁 U) 雜之示意圖·， 3圖.習用美國專利第079號打線連接 爻尔意圖； —夕 第4圖 之示意圖 苐5圖 第6圖 第7圖 第8圖 第9圖 第 第 習用美國專利第5, 32 8, 0 79號打線連接第四步 iPage 6 U) Miscellaneous diagrams, 3 diagrams. Conventional US patent No. 079 wire connection intent;-diagram of diagram 4 diagram 5 diagram 6 diagram 7 diagram 8 diagram 9 diagram 9 U.S. Patent No. 5, 32 8, 0 79 Wired connection step 4 i

習用第4圖之局部放大圖； 本發明打線連接第一步驟之示意圖 本發明打線連接第二步驟之示意圖 本發明打線連接第三步驟之示意圖 本發明打線連接第四步驟之示意圖 0圖：本發明第9圖之局部放大圖； 1圖：本發明進行打線連接之示意圖； ί 施，上、- · I 及 附照曰明進行打線連接之示意圖； 二.習用淳球方式所形的凸球圖及打線連接方式 化成導線焊接圖； 式低f2 .本發明焊球方式所形成的凸球圖及打線連接^-附i~0,2miI所形成導線烊接圖； 舌照3 :本發明焊球方式所形成的凸球圖及打線連接方 叠所形成導線焊接圖； 附照4 :本發明焊球方式所形成的凸球圖及打線連接方 式偏置0.2mil所形成導線烊接圖； 附照5 :本發明焊球方式所形成的凸球圖及打線連接方 式偏置〇.4nTil所形成導線焊接圖； 附照6 :本發明焊球方式所形成的凸球圖及打線連接方 式偏置0.6mil所形成導線烊接圖； 403981 五、發明說明（5) 附照7 :本發明焊球方式 式偏置所形成導線^形圖成的及凸球圖及打線連接方 戈：置；〇本1發所明：球方式所形成的&球圖及打線連接方 式偏置1· OinU所形成導線焊接圖。 免按万 [ 圖號說 明 ] 100 基板 110 晶 片 111 焊 墊 120 鋼 嘴 121 凸 球 130 夾 頭 200 基 板 201 焊 墊 210 晶 片 211 焊 塾 220 鋼 嘴 221 凸 球 230 夾 頭 [ 發明 說 明 ] 本發 明 積 體 電 路 晶 月之 打 線連 接 方 至 第二 焊 點 進 行 焊 球後該 鋼 嘴直 接 上 凸 球上 形 成 形 狀 及 大 小一 致 的球 體 及 狀 尾端 1 形 狀 及 大 小 一致 的 該凸 球 供 凸 球提 供 較 小 的 焊 接 變異 性 ，因 而 使 較 佳的 產 品 可 靠 度 0 請參 昭 * 第 六 圖 所 示 ，本 發 明之 一 基 形 成一 第 二 焊 點 5 該 第二 焊 點位 於 一一 1 2 2 凸球尾端 2 2 2 凸球尾端Partial enlarged view of Figure 4; Schematic diagram of the first step of the wire connection according to the present invention. Schematic diagram of the second step of the wire connection according to the present invention. Schematic diagram of the third step of the wire connection according to the present invention. Schematic diagram of the fourth step of the wire connection according to the present invention. Partial enlarged view of FIG. 9; FIG. 1: Schematic diagram of wire connection according to the present invention; ί, upper, I, and attached picture Schematic diagram of wire connection; 2. Convex sphere diagram using conventional ball method And wire connection method into wire welding diagram; low f2. Convex ball diagram formed by the solder ball method of the present invention and wire connection ^-attached i ~ 0,2miI wire formation diagram; tongue photo 3: the solder ball of the present invention The convex ball pattern formed by the method and the wire welding pattern formed by the wire connection square stack; Attachment 4: The convex ball pattern formed by the solder ball method of the present invention and the wire connection pattern offset by 0.2 mil with the wire connection method; attached photo 5: The convex ball pattern formed by the solder ball method of the present invention and the wire connection method offset is 0.4 nTil; the attached soldering pattern is 6; the attached ballast pattern is formed by the solder ball method of the present invention and the wire connection method is offset by 0.6 mil Wire connection diagram; 403981 V. Description of the invention (5) Attached photo 7: The wire formed by the solder ball pattern offset of the present invention and the convex ball diagram and wire connection It is clear that the & ball pattern formed by the ball method and the wire connection method are offset by the welding pattern of the wire formed by 1 · OinU. Free of charge [Description of drawing number] 100 substrate 110 wafer 111 solder pad 120 steel nozzle 121 convex ball 130 chuck 200 substrate 201 solder pad 210 wafer 211 welding paddle 220 steel nozzle 221 convex ball 230 chuck [invention of the invention] After the wire connection of the body circuit crystal moon is connected to the second solder joint for solder ball, the steel mouth is directly on the convex ball to form a sphere with the same shape and size and a tail. 1 The convex ball with the same shape and size provides more Small welding variability, so better product reliability 0 See Zhao * As shown in the sixth figure, a base of the present invention forms a second solder joint 5 The second solder joint is located on a 1 2 2 convex ball Tail end 2 2 2

一下降 線，使該 墊211上，一鋼嘴 2 2 0則在該第二烊點進行焊球，使該晶片21 〇不致党到該鋼 嘴220碰觸而受損。該鋼嘴220在開口之導線一端燒結成一A descending line causes the pad 211 to be welded with a steel nozzle 2 2 0 at the second point, so that the wafer 21 will not be damaged by touching the steel nozzle 220. The steel nozzle 220 is sintered into

第8頁 403981 五、發明說明（6) 凸球221。 °月再參照第七圖所示’該鋼嘴22〇下降至該第二焊點 上二使該鋼嘴22 0之凸球221底部黏焊於該焊墊2 1〗上而形 f 一凸球221。此時’使該夾頭23〇位於開啟狀態，使該 嘴2 2 0可供導線延伸出。 士叫再參照第八圖所示，該鋼嘴2 2 〇往上移動一預定之適 當距離，此時，該夾頭2 30位於開啟狀態，使該鋼嘴22〇可 供導線延伸出，而該凸球22丨形成具有延伸部與導線連 接0 凊再參照第九及十圖所示，該夾頭23〇閉合狀態而夾緊 導線，此時，該鋼嘴220再往上移動而使導線受一伸張拉 力〔tension force〕，因而使該凸球221之延伸部依焊接 所產生的界面A被扯斷。因此，在該焊墊21ι之凸球22ι形 成形狀及大小一致的球體及高度相近的一凸球尾端222且 該凸球尾端222具有垂直柱艘狀，該凸球尾端222 方 向上，成一熱影響區高度D，該熱影蜜區高度1)雖^^不 等的高度，然而本發明在該凸球尾端222及形狀及大小一 致的球體進行第二打線，此時該凸球尾端2 2 2將受到鋼嘴 内體及導線的推壓而產生變形〔請參照附照二至八〕。本 發明第一焊點可設於晶片上而第二焊點則設於另一晶片 上，或第一焊點可設於基板〔導線架〕上而第二則設 於晶片上，以導線連接該第一焊點及第二焊點之間，因而 形成一通路。 請再參照第三及九圖所示，習用美國專利第5,328,〇79Page 8 403981 V. Description of the invention (6) Convex ball 221. ° Refer to the seventh figure again, 'The steel nozzle 22o is lowered to the second welding point, so that the bottom of the convex ball 221 of the steel nozzle 22 0 is welded to the pad 2 1 and the shape f is convex. Ball 221. At this time, 'the chuck 23 is in an open state, so that the mouth 220 can be extended by the wire. With reference to the eighth figure, the driver calls the steel nozzle 2 2 0 upward for a predetermined appropriate distance. At this time, the chuck 2 30 is in an open state, so that the steel nozzle 22 0 can be extended by the wire, and The convex ball 22 is formed with an extension and connected to the lead wire. 凊 With reference to the ninth and tenth figures, the chuck 23 is closed to clamp the lead wire. At this time, the steel nozzle 220 is moved upward to make the lead wire. Due to a tension force, the extension of the convex ball 221 is broken according to the interface A generated by welding. Therefore, the convex ball 22 of the pad 21m forms a sphere with the same shape and size and a convex ball end 222 of similar height, and the convex ball end 222 has a vertical columnar shape. In the direction of the convex ball tail 222, A heat-affected zone height D, the height of the thermal shadow honey zone 1) Although the height is not equal to ^^, the present invention performs a second threading on the convex ball tail 222 and a sphere with the same shape and size. At this time, the convex ball The tail end 2 2 2 will be deformed by the inner body of the steel nozzle and the wire [please refer to the attached photos 2 to 8]. According to the present invention, the first solder joint may be provided on a wafer and the second solder joint may be provided on another wafer, or the first solder joint may be provided on a substrate [lead frame] and the second solder joint may be provided on a wafer and connected by wires. A path is formed between the first solder joint and the second solder joint. Please refer to the third and ninth figures again, and the conventional U.S. Patent No. 5,328, 〇79

第9頁 403981 五、發明說明（7) 號之鋼嘴120往該凸球121側邊敕你你$拉外n 资移位使連接該凸球1 2〗夕Λ 球尾端122導線往側邊傾斜，真4|丨田咕細冰·水之凸 , 再利用該鋼嘴頭將尾端遠技 線施壓於該凸球1 2 1表面上形#々1时 毛細運接 4的大小及方向不易控制，由於該凸球121受鋼^2〇Page 9 403981 V. Description of the invention (7) The steel nozzle 120 of the (7) side of the convex ball 121 will move you to the outside of the convex ball 1 to shift the connection to the convex ball 1 2〗 Λ Ball tail end 122 wire to the side The side is inclined, really 4 | 丨 Tian Gu fine ice · convex of water, and then use the steel mouth to press the tail end far line to the convex ball 1 2 1 on the surface of the shape # 々1 capillary transport size 4 And direction is not easy to control, because the convex ball 121 is affected by steel ^ 2〇

〔Stltch bonding〕而使該凸球121的球體塌陷， P 球1 2 1之球體進行打線時具有鲂士沾磁g以 _ ^ ϋ _ 景夕響到焊接點的拉伸強度，以及答個莫綠、* & ^ 、 知也 Μ及整個導線連接線路側移的 程度〔W1re sweep〕，對於使用細接腳〔fine pitc ic晶片，境增加導線間碰觸〔sh〇rt〕的危險，進而減低 產品可靠度。反觀，本發明之鋼嘴22〇將導線燒結完二 凸球221後再往上移動，使該凸球221之延伸部依燒結所產 生的界面A被扯斷，該界面A係導線燒結球時熱影響區 〔heat affected zone〕產生晶粒重組而該凸球22丨之延 伸部與導線之間形成一結構脆弱的界面，使該凸球尾端 222具有高度近似的垂直柱體狀，由於本創作不進行壓印 而使5亥凸球2 2 1具有形狀及大小一致的球體供進行第一打 線，該凸球2 2 1之球體進行第二打線時具有較小的變異 性，進而增加產品可靠度，此外，由於本發明形成凸球的 製程較習用的技術更為簡單，對於縮短製程時間上有正面 的助益》 本發明係採用K&S 1488機臺〔bonder〕，其鋼嘴 〔capillary〕為Micr〇-swiss414FA 及火嘴間隙為15，其 所燒結的線徑與球徑比例為1. 0 : 2. 2。請再參照第十圖所 示’採用三菱〔Mitsubishi〕材料MGMF所得的導線凸球尾[Stltch bonding] The sphere of the convex ball 121 is collapsed, and the ball of P ball 1 2 1 has a magnetic contact with the magnet when it is wired. With _ ^ _ _ Jing Xixiang ’s tensile strength to the welding point, and answer a question Green, * & ^, Zhiye M, and the degree of lateral shift of the entire wire connection line [W1re sweep]. For the use of fine pins (fine pitc ic chips), the risk of contact between wires [sh〇rt] is increased, thereby reducing Product reliability. In contrast, the steel nozzle 22 of the present invention sinters the wire after sintering the second convex ball 221 and then moves upward, so that the extension of the convex ball 221 is torn off according to the interface A generated by the sintering. In the heat affected zone, grain reorganization occurs and a structurally fragile interface is formed between the extension of the convex ball 22 and the wire, so that the tail end 222 of the convex ball has a highly similar vertical cylindrical shape. Creation without embossing, the 5 Hai convex ball 2 2 1 has a sphere with the same shape and size for the first threading. The convex ball 2 2 1 has a small variability when the second threading is performed, thereby increasing the product. Reliability. In addition, because the process of forming a convex ball according to the present invention is simpler than the conventional technique, it has a positive effect on shortening the process time. 0: 2.2. The capillary] is Micr〇-swiss414FA and the mouthpiece gap is 15, and the ratio of the sintered wire diameter to the ball diameter is 1.0: 2.2. Please refer to the tenth figure again. ‘Mitsubishi ’s MGMF wire bump ball tail

_ioaaai 五、發明說明（8) 端熱影響區高度〔length of heat affected zone 〔H.A.Z. 〕〕D介於94-9 6ihm之間，而採用三菱 〔Mi tsubishi〕材料MGM7所得的導線凸球尾端熱影響區高 度D介於1 〇2〜1 0 5mm之間，因此在這種情況下所產生的凸球 尾端高度D具極為相近且穩定的高度。 請再參照第Η 圖所示，本發明之基板2 0 0上由導線連 接第一焊點之一焊墊，該導線由鋼嘴220移動而再延伸至 該第二焊點上’在該晶片210之凸球221球體上進行第二打 線。本發明該鋼嘴220打線之下降路徑與該凸球尾端垂直 線之間具有一允許範圍L，由於凸球221之球體具有形狀及 大小一致的球體，因而第二打線的L值容許較大的範圍， 該L值介於-〇. 2mil至丨· 〇mil之間，如附照二至八所示，本 發明的第二打線具有較佳的可靠度。 請再參照附照一所示，習用烊球方式在第二焊點所形成 笛凸球，該凸球具有被壓印塌陷的不穩定形狀，因而在^^ 軔第二打線所形&第二•點的•接只能允^ ^右製程範圍内工作，以大量生產的角度而言，使該打 可靠度。請再參照附照-所示，反觀，本 表方式在第一焊點所形成的凸球，該凸球具有形狀 的球體供進行第二打線，因而在該第二焊點上 打ϊί::線所形成第二焊點的焊接品質較佳’使本發明 订線具有增加產品可靠度。 發：然已以較佳實施例揭示，然其並非用以限定本 任何熟習此技藝者，在不脫離本發明之精神和範圍_ioaaai V. Description of the invention (8) The height of the end heat affected zone [length of heat affected zone [HAZ]] D is between 94-9 6ihm, and the tail end of the wire convex ball obtained by using Mitsubishi [Mi tsubishi] material MGM7 The height D of the affected area is between 102 and 105 mm. Therefore, the height D of the rear end of the convex ball generated in this case has a very similar and stable height. Please refer to FIG. Η again, the substrate 200 of the present invention is connected to a pad of a first solder joint by a wire, and the wire is moved by the steel nozzle 220 to extend to the second solder joint. The second ball is performed on the convex ball 221 of 210. According to the present invention, there is an allowable range L between the descending path of the steel nozzle 220 and the vertical line at the tail end of the convex ball. Because the sphere of the convex ball 221 has a sphere with the same shape and size, the L value of the second wire is allowed to be large. Range, the L value is between -0.2mil to 丨 · mil. As shown in the attached photos 2 to 8, the second wire of the present invention has better reliability. Please refer to the attached picture again. The conventional ball-shaped ball method is used to form a flute convex ball at the second solder joint. The convex ball has an unstable shape that is collapsed by embossing. The two-point connection can only work within the range of ^ ^ right process. From the perspective of mass production, it should make the printing reliable. Please refer to the attached picture again. As shown, in contrast, the convex ball formed in the first welding point of this table method has a spherical shape for the second wire, so it is hit on the second welding point. The better welding quality of the second solder joint formed by the wire, 'makes the wire of the present invention increase the reliability of the product. Hair: Although it has been disclosed in a preferred embodiment, it is not intended to limit any person skilled in the art without departing from the spirit and scope of the present invention.

第12頁Page 12

Claims (1)

_mi 88111228 六、申請專利範圓 ~、—日 修正‘ i. 一種積體電路之打線連接方法，用以將位於半 梦 上之一第一打線點與一第二打線點電氣連接，該方法^含 下列步驟： 3 於該第二打線點上形成一凸球，該凸球具有一球體部分 以及一尖銳的尾端部分’由該第二打線點向外伸出； 將一導電體連接線與該第一打線點相連接；以及 將該連接線移動至該第二打線點，且將，連接線連接在 成形於該第二打線點上之該凸球上， 其中，形成該凸球的方法包括： 加熱該連接線，以於一鋼嘴上形成該凸球； 將該鋼嘴向下移動至該第二打線點，且將該凸球連接於 該第二打線點上；以及 將該鋼嘴以垂直的方向向上移動，以便藉由張力拉斷該 連接線，用以於該凸球上形成尖銳的尾部尖端，由該第二 打線點向外伸出》 U 2.依申請專利範圍第1項之打線連接方法，其中該第一打 線點係位於一第一晶片上，且該第二打線點係位於一第」 晶片上。 3.依申請專利範圍第1項之打線連接方法，其中該笫一打 線點係位於一基板上，且該第二打線點係位於一晶月上 打 4.依申請專利範圍第1項之打線連接方法，其中該笫_mi 88111228 VI. Patent Application Fan Yuan ~, -Day Amendment 'i. A wiring connection method of an integrated circuit for electrically connecting a first wiring point and a second wiring point on a dream, this method ^ The method includes the following steps: 3 forming a convex ball on the second wire-bonding point, the convex ball having a sphere portion and a sharp tail end portion 'extending from the second wire-bonding point; The first hitting point is connected; and the connecting line is moved to the second hitting point, and the connecting line is connected to the convex ball formed on the second hitting point, wherein the method of forming the convex ball The method includes: heating the connecting wire to form the convex ball on a steel mouth; moving the steel mouth down to the second wire drawing point, and connecting the convex ball to the second wire drawing point; and the steel The mouth is moved upward in a vertical direction so as to pull the connecting line by tension to form a sharp tail tip on the convex ball and protrude outward from the second threading point "U 2. 1 wire connection method, which The first wire-based point located on a first wafer, and the second wire is located on a point on line "wafer. 3. Wire connection method according to item 1 of the scope of patent application, wherein the first wire connection point is located on a substrate, and the second wire connection point is located on a crystal moon. 4. Wire connection according to item 1 of the patent application scope Connection method where the 笫 未命名 第13頁 403981__ , 六、'申請專利範圍 1、 一種積體電路晶片之打線連接方法，該方法包含下列― 步驟： 在鋼嘴上燒結形成一凸球； 該鋼嘴下降至一第二焊點進行焊球；及 - 該鋼嘴上升拉扯導線斷裂而在凸球上形成形狀及大小.-一致的球體及垂直柱體狀凸球尾端； 一第一焊點供該鋼嘴將一導線一端進行第一打線 其中該導線另一端可在該凸球上進行第二打線，使該 導線連接於該第一焊點及第二焊點之間。 2、 依申請專利範圍第1項之積體電路晶片之打線連接方 法，該第一焊點位於一晶片上，而該第二焊點則位於 另一晶片上，以導線連接該第一焊點及第二焊點之間 ，因而形成一通路。 ， 3、 依申請專利範圍第1項之積體電路晶片之打線連接方 法，該第一焊點位於一基板上，而該第二烊點則位於;安; ：r 一晶片上，以導線連接該第一焊點及第二焊點之間， 因而形成一通路。 .4、依申請專利範圍第1項之積體電路晶片之打線連接方 法，該第一焊點位於一導線架上，而該第二焊點則位 於一晶片上，以導線連接該第一焊點及第二焊點之間 ，因而形成一通路。 5、依申請專利範圍第1項之積體電路晶片之打線連接方 法，該鋼嘴220打線之下降路徑與該凸球尾端垂直線 之間具有一間距。Untitled page 13 403981__, VI. Application scope 1. A method for wire bonding of integrated circuit chips, the method includes the following steps: sintering on a steel nozzle to form a convex ball; the steel nozzle is lowered to a second The solder joints are solder balls; and-the steel nozzle rises and pulls the wire to break to form the shape and size on the convex ball.-The uniform sphere and the tail end of the vertical cylindrical convex ball; a first solder joint for the steel nozzle to One end of the wire is first wired, and the other end of the wire may be second wired on the convex ball, so that the wire is connected between the first solder joint and the second solder joint. 2. According to the wiring method of integrated circuit chip of item 1 of the scope of the patent application, the first solder joint is located on one wafer, and the second solder joint is located on another wafer, and the first solder joint is connected by a wire. And a second solder joint, thus forming a via. 3. According to the wiring method of integrated circuit chip according to item 1 of the scope of patent application, the first solder joint is located on a substrate, and the second bump is located on; Ann;: r on a chip, connected by wires A path is formed between the first solder joint and the second solder joint. .4. According to the wiring method of the integrated circuit chip according to item 1 of the scope of the application, the first solder joint is located on a lead frame, and the second solder joint is located on a wafer, and the first solder is connected by a wire. A spot is formed between the spot and the second solder joint. 5. According to the wiring connection method of the integrated circuit chip of item 1 of the patent application scope, there is a gap between the descending path of the steel nozzle 220 and the vertical line at the tail end of the convex ball. 第13頁Page 13 第14頁 _mi 88111228 六、申請專利範圓 ~、—日 修正‘ i. 一種積體電路之打線連接方法，用以將位於半 梦 上之一第一打線點與一第二打線點電氣連接，該方法^含 下列步驟： 3 於該第二打線點上形成一凸球，該凸球具有一球體部分 以及一尖銳的尾端部分’由該第二打線點向外伸出； 將一導電體連接線與該第一打線點相連接；以及 將該連接線移動至該第二打線點，且將，連接線連接在 成形於該第二打線點上之該凸球上， 其中，形成該凸球的方法包括： 加熱該連接線，以於一鋼嘴上形成該凸球； 將該鋼嘴向下移動至該第二打線點，且將該凸球連接於 該第二打線點上；以及 將該鋼嘴以垂直的方向向上移動，以便藉由張力拉斷該 連接線，用以於該凸球上形成尖銳的尾部尖端，由該第二 打線點向外伸出》 U 2.依申請專利範圍第1項之打線連接方法，其中該第一打 線點係位於一第一晶片上，且該第二打線點係位於一第」 晶片上。 3.依申請專利範圍第1項之打線連接方法，其中該笫一打 線點係位於一基板上，且該第二打線點係位於一晶月上 打 4.依申請專利範圍第1項之打線連接方法，其中該笫Page 14_mi 88111228 VI. Patent Application Fan Yuan ~, -Day Amendment 'i. A wiring connection method for integrated circuits, which is used to electrically connect a first wiring point and a second wiring point on a half dream The method includes the following steps: 3 forming a convex ball on the second wire-bonding point, the convex ball having a sphere portion and a sharp tail end portion 'protruding outward from the second wire-bonding point; A body connecting line is connected to the first wire-connecting point; and the connecting line is moved to the second wire-connecting point, and the connecting line is connected to the convex ball formed on the second wire-connecting point, wherein the forming The method of the convex ball includes: heating the connecting line to form the convex ball on a steel mouth; moving the steel mouth down to the second wire drawing point, and connecting the convex ball to the second wire drawing point; And the steel nozzle is moved upward in a vertical direction so as to pull the connecting wire by tension to form a sharp tail tip on the convex ball, and protrude outward from the second wire-bonding point. Wire-connected party in the scope of patent application No. 1 Method, wherein the first wiring point is located on a first wafer and the second wiring point is located on a first wafer. 3. Wire connection method according to item 1 of the scope of patent application, wherein the first wire connection point is located on a substrate, and the second wire connection point is located on a crystal moon. 4. Wire connection according to item 1 of the patent application scope Connection method where the 笫 未命名 第13頁Untitled Page 13 未命名 第14頁Untitled Page 14
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