TW200303156A - Inductively coupled plasma processing device - Google Patents

Abstract

The present invention provides an inductively coupled plasma processing device, which does not cause the decrease of plasma density due to capacitor coupling component and non-uniformity of plasma density due to the shift of electrical field distribution on a large substrate, so as to perform an uniform plasma processing with plasma of a higher density. Inductively coupled plasma is formed in a processing chamber 4 by supplying high frequency to a high frequency antenna 13. The inductively coupled plasma processing device applies plasma processing to a substrate G. The high frequency antenna 13 has a part 63 on which antenna wires 46, 47, 48, 49, 50, 51 52 are formed sparsely and parts 61, 62 on which antenna wires are formed densely, and also a central part 60 on which no antenna wire is formed.

Description

200303156 A7 B7 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an inductively-coupled plasma processing device that applies a treatment such as uranium etching to a substrate. [Prior art] In the manufacturing process of a liquid crystal display (LCD), etc., in order to apply a predetermined treatment to a glass substrate, various plasma processing devices such as a plasma etching device or a plasma CVD film forming device are required. Such a plasma processing apparatus has conventionally used a capacitive coupling processing apparatus, but in recent years, attention has been paid to an inductively coupled plasma processing apparatus having a high vacuum and the advantages of obtaining a high-density plasma. An inductively coupled plasma processing device is configured by placing a high-frequency antenna on the outside of a dielectric window of a processing container that houses a substrate to be processed, and supplying processing gas into the processing container. An inductive coupling plasma is generated in the processing container, whereby the inductive coupling plasma is applied to a substrate to be processed with a predetermined plasma. Most of the high-frequency antennas of the inductively coupled plasma processing device use a vortex planar antenna. However, in recent years, the enlargement of LCD glass substrates has been rapidly progressing. Therefore, the inductively coupled plasma processing apparatus has to be enlarged. In response, the high-frequency antennas have also been enlarged. However, if the swirl-shaped high-frequency antenna is directly enlarged, there will be problems such that the antenna length becomes longer, the antenna impedance becomes higher, it is difficult to match the high-frequency power supplied to the high-frequency antenna, and the antenna potential becomes high. When the antenna potential becomes high, the capacitive coupling between the high-frequency antenna and the plasma will increase, so it will occur. (Please read the precautions on the back before filling this page) ^ ---, τ

This paper size applies to China National Standard (CNS) A4 (210X 297 mm) -5-200303156 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (2) Inductive affinity plasma cannot be effectively formed, At the same time, the distribution of the electric field is shifted, making the plasma density uneven and handling the problem of unevenness. Conventional techniques for reducing the impedance of the antenna include a technique of reducing the impedance by multiplexing a high-frequency antenna in a plane (Japanese Patent Application Laid-Open No. 8-83 696, etc.). [Problems to be Solved by the Invention] However, conventional multiplexed antennas have branch points in the center. Therefore, as multiplexing progresses, the branch points will be flattened, and the capacitive coupling component will increase. As a result, sufficient plasma density cannot be obtained. When the substrate is large, it is necessary to prevent the deviation of the electric field distribution caused by the multiplexing of the antenna, and the effect will be limited. Therefore, the industry strongly demands that the capacitance coupling component be further reduced, and the processing unevenness caused by the deviation of the electric field distribution be further improved, so as to achieve a uniform plasma processing with a higher density plasma. The present invention has been completed in view of the above-mentioned facts, and an object thereof is to provide, for a large substrate, the plasma density due to the capacitive coupling component to reduce the plasma density and the non-uniform plasma density caused by the deviation of the electric field distribution. Inductively coupled plasma processing device for achieving uniform plasma processing with higher density plasma. [Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides: a processing chamber for accommodating a substrate to be processed and applying plasma processing; a substrate mounting table on which the substrate to be processed is placed in the processing chamber; and supply to the processing chamber Handling gas (Please read the precautions on the back before filling this page)

This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) -6- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 200303156 A7 B7 V. Description of the invention (3) Processing gas supply system; An exhaust system for indoor exhaust; a dielectric wall constituting the upper wall of the processing chamber; an antenna wire is formed into a predetermined pattern and arranged at a portion corresponding to the dielectric wall of the processing chamber, and a predetermined The high-frequency power forms a high-frequency antenna for inducing an electric field in the processing chamber; and a power supply member that supplies high-frequency power of high-frequency power to a vicinity of a center portion of the high-frequency antenna, since high-frequency power is supplied to the high-frequency antenna. An inductively coupled plasma processing device for forming an inductively coupled plasma in the processing chamber and applying a plasma treatment to a substrate to be processed is characterized in that the high-frequency antenna has a portion where the density of the antenna wires is reduced, and The dense part, meanwhile, there is no antenna wire in the center part. Because the high-frequency antenna has a portion where the density of the antenna wire becomes sparse and the portion becomes denser, the induction electric field can be uniformized (elimination of the deviation of the induction electric field distribution), and a uniform plasma can be generated. There is no antenna wire in the center of the antenna. Therefore, even with a large substrate, the capacitive coupling between the antenna and the plasma can be reduced, and the decrease in the plasma density can be suppressed. In the inductively-coupled plasma processing apparatus, it is preferable that the high-frequency antenna is divided into a plurality of antenna wires from the power-supplying member and multiplexed. This multiplexing can reduce inductance, antenna impedance, and antenna potential, further effectively eliminate the above-mentioned unevenness of electric field distribution, and at the same time, make it less prone to capacitive coupling. This effect can be made extremely high by making the number of antenna wires 8 and 8-fold. It is preferred that the antenna wire has one or more capacitors in series. In this way, this paper size can be applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

200303156 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (4) Reduce the antenna impedance and antenna potential. At the same time, in a multiplexed antenna, multiple antenna wires are connected in series with one or more capacitors, which can multiply with the multiplexed antenna and further improve the effect of reducing the antenna impedance. A part or all of the high-frequency antenna is preferably separated from the dielectric wall. In this way, the high-frequency antenna is properly separated from the dielectric wall, which can reduce the capacitive coupling between the high-frequency antenna and the plasma. At the same time, in this high-frequency antenna, the distance from the central portion to the dielectric wall can be made larger than the distance from the peripheral portion to the dielectric wall. Thereby, the part near the power supply part with the highest potential of the antenna can be far away from the dielectric wall, and the capacitive coupling component can be effectively reduced. At this time, the peripheral portion of the antenna can be brought into contact with the dielectric wall, and only the central portion can be separated from the dielectric wall. When there are 8 antenna wires, it is preferable that the high-frequency antenna is around the center of the antenna. It is preferable that the antenna has four power supply sections connected to the power supply members arranged at approximately the same radius from the center and staggered by 90M. Each power supply section has two antenna wires extending outward, and the two antenna wires extending from each power supply section are arranged close to each other in parallel and have a first straight section extending from the power supply section to an intermediate position on the periphery of the antenna. ; The second linear portion bent 90 ° inward at the terminal position of the first linear portion and extending to an intermediate position of the antenna peripheral edge; bent diagonally outward at the terminal position of the second linear portion and extending to the antenna peripheral edge The third straight portion of the unit; the fourth straight portion bent at the terminal position of the third straight portion and extending slightly parallel to the first straight portion, and the first straight portion extending from the adjacent power supply portion is in order Staggered by 90 °, and by extending the two antenna wires from each of the four power supply units, the first paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm1 (please read the precautions on the back before filling) This page)

-8- 200303156 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (5) The straight part and the second straight part form the central part where the antenna wire is closely arranged, and the fourth straight part forms the closely arranged antenna wire The peripheral portion of the antenna and the third linear portion form a middle portion in which the antenna wires are loosely arranged, and the center portion inside the four power supply portions does not have an antenna wire. Due to such a structure, it is possible to form appropriate denseness of the antenna wires in the high-frequency antenna, to uniformize the electric field distribution, and to reduce the antenna impedance because the antenna 8 is duplicated. Around, it will not increase the capacitive coupling component due to multiplexing. Therefore, even for large substrates, the plasma density will not decrease due to the capacitive coupling component, and the plasma density will not be uneven due to the deviation of the electric field distribution. Uniform plasma treatment with higher density plasma. In this case, it is better that the eight antenna wires are composed of four groups of the same length every other one. In this way, four groups of exactly the same antenna wire pairs can be arranged at 90 ° shifts, respectively. Therefore, the antenna wire is arranged symmetrically, and the electric field strength is highly uniform. The eight antenna wires can be the same length. Furthermore, it is preferable that the inner portion of the two antenna wires extending from each power supply portion has a fifth straight portion that is bent inward at 90 ° at the terminal position of the fourth straight portion and extends. This makes it easy to make the eight antenna wires the same length. At the same time, it is preferable that the peripheral end portions of the eight antenna wires are grounded via a capacitor. This can reduce the antenna impedance. In addition, the high-frequency antenna has four power supply parts connected to the power supply members arranged at approximately the same radius from the center and shifted by 90 ° around the center part, and each of the power supply parts extends outward from the power supply part by a total of 4 Antenna wires, antenna wires extending from each power supply unit, have: from the power supply this paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) (please read the precautions on the back before filling this page)

-9-200303156 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (6) The first straight line portion extending to the middle position of the antenna periphery; bent inward 90 at the end position of the first straight line portion . , And extends to the second straight line portion to the middle position of the antenna peripheral edge; the terminal position of the second straight line portion is bent outward in the oblique direction, and extends to the third straight line portion of the antenna peripheral portion; to the terminating position of the third straight line portion A fourth linear portion that is bent and extends slightly parallel to the first linear portion, and the first linear portion extending from the adjacent power feeding portion is sequentially shifted by 90 °, and the antennas extending from the four power feeding portions are respectively The first straight portion and the second straight portion of the lead form a central portion where the antenna lead is closely arranged, the fourth straight portion forms a peripheral portion where the antenna lead is closely arranged, and the third straight portion forms the intermediate portion where the antenna lead is loosely arranged. The central part inside the four power supply parts does not have an antenna wire. This structure is that the high-frequency antenna composed of the above 8 antenna wires also has 4 power supply sections, and from these power supply sections each extends the structure of the antenna wires of the same structure as above, so as with the above structure, it can be formed on the high frequency antenna. The proper density of the antenna wires makes the electric field distribution uniform. Because the antenna is quadruple, it can not reduce the antenna impedance even when it is not quadruple. Also, because the power supply is located in the center It will not increase the capacitive coupling component due to multiplexing. Therefore, even for large substrates, the plasma density will not decrease due to the capacitive coupling component, and the plasma density will not be uniform due to the deviation of the electric field distribution. Uniform plasma treatment with higher density plasma. In this case, it is preferable that a capacitor be provided between the peripheral end portion of each of the antennas and the third linear portion. This can further reduce the antenna impedance and reduce the potential of the antenna midway. At the same time, the third paper size set above applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)

-10-200303156 A7 B7 V. Description of the invention (7) The capacitor of the straight part is located at the center of the length of the antenna wire. This effect can be further improved. (Please read the notes on the back before filling out this page) [Embodiments of the invention] The embodiments of the present invention will be described below with reference to the drawings. Fig. 1 is a sectional view showing an inductively coupled plasma uranium engraving device according to an embodiment of the present invention. This device is used, for example, when forming a thin-film transistor on an LCD glass substrate during the manufacture of an LCD, when it is used to etch a metal film, an ITO film, an oxide film, and the like. This plasma etching apparatus includes a hermetically sealed container 1 in the shape of a prism formed of a conductive material such as aluminum whose inner wall surface is anodized. The main body container 1 can be disassembled and grounded by a ground wire 1 a. The main body container 1 is partitioned by a dielectric wall 2 into an upper and lower antenna chamber 3 and a processing chamber 4. Therefore, the dielectric wall 2 constitutes a ceiling of the processing chamber 4. The dielectric wall 2 is made of ceramic such as Al203, quartz, or the like. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A cluster housing 11 for processing gas supply is embedded in the lower part of the dielectric wall 2. The shower frame 11 is arranged in a cross shape and has a structure that supports the dielectric wall 2 from below. Furthermore, the shower frame 11 supporting the dielectric wall 2 is in a state of being hung from the top plate of the main body container 1 by a plurality of stays (not shown). The shower frame 11 is made of a conductive material, preferably a metal, such as aluminum whose inner surface is anodized so that no contaminants can occur. This shower frame 11 is formed with a horizontally extending gas flow path 12, and this gas flow path 12 communicates with a plurality of gas discharge ports 12a extending downward. The paper size of the other party applies the Chinese National Standard (CNS) A4 specification (210X297 mm) _ -11-200303156 A7 B7__ V. Description of the invention (8) (Please read the precautions on the back before filling this page) A gas supply pipe 20a communicating with the gas flow path 12 is provided at the center of the upper surface of the electric body wall 2. The gas supply pipe 20a penetrates from the top plate of the main body container 1 to the outside thereof, and is connected to a processing gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, during the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied to the shower frame 11 through the gas supply pipe 20a, and is discharged into the processing chamber 4 from the gas discharge port 12a below it. A support frame 5 protruding inward is provided between the side wall 3 a of the antenna chamber 3 of the main body container 1 and the side wall 4 a of the processing chamber 4, and a dielectric wall 2 is placed on the support frame 5. The antenna chamber 3 is placed on the dielectric body. The wall 2 is provided with a high-frequency (RF) antenna 13 facing the dielectric wall 2. The high-frequency antenna 13 is separated from the dielectric wall 2 by a distance of 50 mm or less due to the spacer 13a made of an insulating member. Near the central portion of the antenna chamber 3, four power supply members 16 extending straight are provided. These power supply members 16 are connected to a high-frequency power supply 15 via a matching device 14. The power supply member 16 is provided around the gas supply pipe 20a. The details of the high-frequency antenna 13 will be described later. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Plasma processing supplies high-frequency power, such as a frequency of 13.56 MHz, for forming an induced electric field from a high-frequency power source 15 to a high-frequency antenna 13. The high-frequency antenna 13 that supplies high-frequency power in this way forms an induced electric field in the processing chamber 4, and thereby induces an electric field to plasmaize the processing gas supplied from the shower frame U. The output of the high-frequency power supply 15 at this time should be appropriately set to a value sufficient to generate plasma. Below the processing chamber 4, a dielectric body 2 faces the high-frequency antenna 13 and is provided with a susceptor serving as a mounting table for placing the LCD glass substrate G. This paper is sized to the Chinese National Standard (CNS) A4 (210X297) (Mm) ~ '-12-200303156 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Note (9) (susceptor) 22. The susceptor 22 is made of a conductive material such as aluminum whose surface is anodized. The LCD glass substrate G placed on the susceptor 22 is held by the susceptor 22 by means of an electrostatic chuck (not shown). The susceptor 22 is housed in an insulator frame 24 and is supported by a hollow pillar 25. The pillar 25 penetrates the bottom of the main body container 1 in an air-tight manner, and is supported by a lifting mechanism (not shown) arranged outside the main body container 1. When the substrate G is carried in and out, the susceptor 22 is driven in the vertical direction of the lifting mechanism. . A corrugated tube 26 is provided between the insulator frame 24 accommodating the susceptor 22 and the bottom of the main body container 1 so as to enclose the pillar 25 in an airtight manner. Thereby, even if the susceptor 22 is moved up and down, the airtightness in the processing chamber 4 can be ensured. At the same time, a side wall 4a of the processing chamber 4 is provided with a loading and unloading port 27a for loading and unloading the substrate G, and a gate valve 27 for opening and closing. A high-frequency power source 29 is connected to the susceptor 22 via a power supply rod 25a provided in the hollow pillar 25 and a matching device 28. This high-frequency power source 29 applies a high-frequency power for biasing the susceptor 22 during the plasma processing, for example, a high-frequency power having a frequency of 6 MHz. The ions in the plasma generated in the processing chamber 4 are efficiently introduced into the substrate G by the high-frequency power for bias. In the sensor 22, a temperature control mechanism for controlling the temperature of the substrate G, a heating member such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor (not shown) are provided. The piping and wiring of these mechanisms and components are led out of the main body container 1 through hollow pillars 25. An exhaust device 30 including a vacuum pump and the like is connected to the bottom of the processing chamber 4 via an exhaust pipe 31. By this exhaust device 30, the processing chamber 4 is exhausted. During the plasma processing, the processing chamber 4 is set and maintained in a predetermined vacuum environment (please read the precautions on the back before filling this page), τ

This paper size applies the Chinese National Standard (CNS) A4 specification (210X297mm) -13- 200303156 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (β (eg 1. 33 Pa) ° Second, the description The detailed structure of the above-mentioned high-frequency antenna 13 is shown in Fig. 2. Fig. 2 is a plan view showing the high-frequency antenna 13. As shown in Fig. 2, the high-frequency antenna 13 is a square-shaped 8-fold antenna. The XY coordinates of the center of the frequency antenna 1 3 are 0, which indicates that the high-frequency antenna 13 〇 The high-frequency antenna 1 3 has a central portion, which is connected to a position that is arranged at approximately the same radius from the center and is staggered by 90 °. The four power supply sections 41, 42, 43, 44 of the power supply member 16 extend from each power supply section to the outside with two antenna wires. Specifically, two antenna wires 45 and 46 extend from the power supply section 41. Two antenna wires 47 and 48 extend from the power supply section 42, two antenna wires 49 and 50 extend from the power supply section 43, and two antenna wires 51 and 52 extend from the power supply section 44. Two antennas extend from each power supply section The wires are arranged parallel to each other The antenna wires 45 and 46 extending from the power supply section 41 include first linear sections 45a and 46a extending in the negative direction of the Y-axis from the power supply section 41 to the intermediate position of the antenna periphery, respectively; The position is bent 90 ° inward and extends to the second straight portion 45b, 46b to the middle position of the antenna periphery; at the terminal position of the second straight portion, it is bent outward at an angle of approximately 45 ° at the terminal position, and extends to the periphery of the antenna The third straight portions 45 c and 46 c are formed at the end of the third straight portions 45 c and 46 c, and the fourth straight portions 45 d and 46 d are bent at the end positions of the third straight portions 45 c and 46 c and extend slightly parallel to the first straight portions 45 a and 46 a. The inner antenna wire 46 is the same length as the outer antenna wire 45, and has a 90 ° bend inward at the end position of the fourth straight portion 46d. (Please read the precautions on the back before filling this page),- 'mouth

This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) -14- 200303156 A7 B7 V. Description of the invention (1) (Please read the precautions on the back before filling this page) Straight part 4. The antenna wire 45 is terminated at the fourth linear portion 45d and is grounded via the capacitor 18 in series. The antenna wire 46 is terminated at the fifth linear portion 46e and grounded via the capacitor 18 in series. The antenna consumer's cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the antenna wires 47 and 48 extending from the power supply section 42 adjacent to the power supply section 41 in a clockwise direction, and each has a first straight portion 45a from the antenna wires 45 and 46. The 46a direction is offset from the 90 ° direction, that is, the first linear portions 47a, 48a extending from the power supply portion 42 to the intermediate position of the antenna periphery in the negative direction of the X axis; the terminal portion of the first linear portion is bent inward. 90 °, and extends to the second straight portions 47b, 4 8b to the middle position of the antenna peripheral edge; at the terminal position of the second straight portion, it is bent outward at an angle of about 4 5 at the terminal position, and extends to the third portion of the antenna peripheral portion The linear portions 47c and 48c; the fourth linear portions 47d and 48d which are bent at the terminal positions of the third linear portions 47c and 48c and extend slightly parallel to the first linear portions 47a and 48a. At the same time, in order to make the inner antenna lead 48 and the outer antenna lead 47 the same length, a fifth straight portion 48e bent 90 ° inward at the terminal position of the fourth straight portion 48d is provided. The antenna wire 47 is a terminal at the fourth linear portion 47d and is grounded via a series capacitor 18, and the antenna wire 48 is a terminal at the fifth linear portion 4 8e and is grounded via a series capacitor 18. The antenna wires 49 and 50 extending from the power supply section 43 adjacent to the power supply section 42 in a clockwise direction have the first linear portions 47 & 48 & directions staggered from the antenna wires 47 and 48 by 90 (5 directions), respectively. That is, the first straight portions 49a, 50a extending from the power supply portion 43 to the middle position of the antenna periphery in the positive direction of the ¥ axis; bent inward at 90 ° at the terminal position of the first straight portion, and extending to, The second straight part to the middle position of the antenna perimeter. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 200303156 A7 B7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Inventory (4 9b, 5 Ob; bent at the terminal position of the second linear portion to the outside in the oblique direction by about 45. The third linear portion 49c, 5 Oc, which extends to the peripheral edge portion of the antenna; bent at the terminal position of the third linear portion 49c, 50c And fourth linear portions 49d and 50d extending slightly parallel to the first linear portions 49a and 50a. At the same time, in order to make the inner antenna lead 50 and the outer antenna lead 49 have the same length, the fourth straight portion 49d is provided in the fourth straight portion. 50d end position bent inward The fifth straight portion 50e bent at 90 °. The antenna wire 49 is the terminal of the fourth straight portion 49d and is grounded via the capacitor 18 in series. The antenna wire 50 is the terminal of the fifth straight portion 50e and is connected in series. The capacitor 18 is grounded. The antenna conductors 51 and 52 extending from the power feeder 44 adjacent to the power feeder 43 in a clockwise direction are respectively provided with the first linear portions 49a and 50a of the antenna conductors 49'50 staggered from each other by 90. The direction of °, that is, the first straight portion 5 1 a, 52 a extending from the power feeding portion 44 to the middle position of the antenna periphery toward the positive direction of the X axis; the end position of the first straight portion is bent inward 90 ° , And extended to the second straight portion 5 lb, 52b to the middle position of the antenna periphery; at the terminal position of the second straight portion, it is bent outward about obliquely about 45 °, and extends to the third straight portion of the antenna periphery 51c, 52c; the fourth straight portion 5 Id, 52d which is bent at the terminal position of the third straight portion 5 1c, 52c and extends slightly parallel to the first straight portion 5 1a, 52a. At the same time, in order to make the inner antenna The lead 52 is the same length as the outer antenna lead 51, and has the The terminal position of the part 52d is bent inward by 90. The fifth straight part 52e. The antenna wire 51 is the terminal of the fourth straight part 5 1d, and is connected to the ground through the capacitor 18 in series. The antenna wire 52 is on the fifth straight line. The terminal of the part 5 2e is grounded via the capacitor 1 8 in series. I --------- install-(Please read the precautions on the back before filling out this page) The size of the paper is applicable to Chinese national standards (CNS ) A4 specification (210X297 mm) -16- 200303156 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (1) There are no antenna wires between the 4 power supply departments 41, 42, 43, 43, 44 The outer portion of the central portion 60 of the first portion forms a first straight portion 45a, 46a, 47a, 48a, 49a, 50a, 51a, 52a «and the same as the antenna wire 45, 46, 47, 48, 49, 50, 51, 52. 2 Straight parts 45b, 46b, 47b '48b, 49b, 50b, 5 1b, 52b The antenna part 61 has a slightly square central part 61, forming a fourth straight part 45d, 46d, 47d, 47c, 49d, 5 The antenna wires of 0d, 5 Id, and 52d closely exist in a slightly square peripheral portion 62, and in the central portion 6 1 and Between the peripheral edge portions 62, an intermediate portion 63 in which the antenna wires of the third straight portions 45c, 46c, 47c, 48c, 49c, 50c, 51c, and 52c are loosely formed is formed. The antenna wires 45, 46, 47, 48, 49, 50, 51, 52 have the same length, and the capacitors 18 connected to the antenna wires have the same capacitance. Therefore, the currents flowing through the antenna wires are equal. Next, the processing operation when the plasma etching process is applied to the LCD substrate G using the inductively coupled plasma etching apparatus configured as described above will be described. First, with the gate valve 27 opened, the substrate G is transported into the processing chamber 4 by a transport mechanism (not shown) from here, placed on the mounting surface of the susceptor 22, and then electrostatically sucked (not shown). The substrate G is fixed on the susceptor 22. Then, the processing gas containing the etching gas is discharged from the processing gas supply system 20 through the gas discharge port 12a of the shower frame 11 into the processing chamber 4, and at the same time, the exhaust device 30 passes through the exhaust pipe 3 1 The inside of the processing chamber 4 is evacuated, thereby maintaining the processing chamber in a pressure environment of, for example, about 1.3 Pa. Then 'apply 13.56 MHz high-frequency from high-frequency power supply 15 to the high-paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) " -17- (Please read the precautions on the back before filling This page) 200303156 A7 B7 V. Description of the invention (θ (Please read the precautions on the back before filling this page) Frequency antenna 1 3 to form a uniform induction electric field in the processing chamber 4 through the dielectric wall 2 With the induced electric field thus formed, the processing gas is plasmatized in the processing chamber 4 to generate a high-density inductively coupled plasma. At this time, the high-frequency antenna 13 is formed as described above, and the central portion 61 and the periphery of the antenna wire are closely arranged. The middle portion 63 of the antenna wire is loosely arranged, and constitutes a structure in which the antenna wire is a tight part and interacts with the loose part, and the center part 60 corresponding to the power supply part does not have an antenna. For ultra-large substrates larger than m, the plasma density unevenness caused by the deviation of the electric field distribution and the decrease in the plasma density caused by the capacitive coupling will not occur. There will be a tendency that the electric field strength of the capacitor in the central part of the processing container is larger and the peripheral part is smaller. However, in this case, there is no antenna wire in the center part and the density of the antenna wire is dense. The induction electric field distribution shown in FIG. 3 is formed directly below the high-frequency antenna 1 3 in the processing chamber 4. In the arrangement portion of the substrate G in the processing chamber 4, the induced electric field intensity distribution is flattened so that the electric field distribution is all-'〇 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and multiplexed because the high-frequency antenna 13 divides 8 antenna wires from the power supply component. Therefore, compared with only one, the inductance can be reduced to 1/8. Reduce the antenna impedance. Therefore, you can effectively reduce the antenna potential, thereby making it more difficult for uneven electric field distribution or an increase in the capacitance affinity component. Moreover, since the antenna wires 45, 46, 47, 48'49 , 50, 5 1 '5 2 The terminal part is connected with a capacitor 1 8 in series, so the paper size of the antenna can be adapted to the Chinese National Standard (CNS) A4 specification (210X297 mm) 200303156 A7 B7 V. Explanatory note (The impedance is reduced, which reduces the antenna potential. Also, the high-frequency antenna 13 is separated from the dielectric wall 2 by the spacer 13a. Therefore, the distance between the high-frequency antenna 13 and the plasma can also be reduced. Capacitive coupling. In addition, the separation distance at this time can be appropriately set within the range of 50 mm or less depending on the frequency, output, and plasma density of the high-frequency power. Moreover, the antenna wires 45, 46, 47, 48 , 49, 50, 51, 52 are all the same length, and the capacitances of the capacitors 18 connected to the antenna wires are the same. Because the currents flowing through the antenna wires are the same, the uniformity of the electric field strength is very high. However, if the eight antenna wires are composed of two groups of four each having the same length, the antenna wires can be arranged in pairs that are staggered by 90 °. Therefore, the antenna wires are arranged symmetrically to obtain an electric field. Uniformity of intensity. As described above, it is possible to prevent uneven plasma density and decrease in plasma density caused by capacitive coupling components. Even if the substrate G is a very large substrate with a side of 1 m or more, it can still be replaced by a higher density plasma. Uniform plasma etching. After the etching process is performed as described above, the application of high-frequency power from the high-frequency power sources 15 and 29 is stopped, and the pressure in the processing chamber 4 is increased to a predetermined pressure, and the gate valve 27 is opened, and the load is carried to the outlet 27a. The substrate G is carried out from the processing chamber 4 to a load lock chamber (not shown), and the uranium etching process of the substrate G is completed. Next, another example of the high-frequency antenna will be described. Fig. 4 is a plan view showing the structure of another example of a high-frequency antenna. This paper size applies to the Chinese National Standard (CNS) A4 (210X 297 mm) I ----- · ---- Approved! (Please read the precautions on the back before filling this page) Order printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs-19- 200303156 A7 B7 V. Invention Description (ιφ (Please read the precautions on the back before filling out this page) High The frequency antennas 13 are four power supply units 4Γ '42', 43 ', and 44' which are provided in the same manner as the power supply units 41, 42, 43, 44 of the high-frequency antenna 13 shown in FIG. The antennas are quadruple antennas each extending one antenna wire. Specifically, the antenna wire 4 5 ′ is extended from the power supply section 4 1 ′, the antenna wire 47 ′ is extended from the power supply section 4 2, and the power supply section 43 ′ is extended. The antenna wire 49 '' extends from the power supply portion 44 'to the antenna wire 5 1'. These antenna wires 4 5, 4, 4 ', 4 9', 5 1 'have first straight portions 45a, 47a ,, 49a, 51a, second straight portion 45b, 47b, 49b ', 5 1b', third straight portion 45c, 47c ', 49c, 51c, fourth straight portion 45d, 47d3, 49d' , 5 1d, these antenna wires 45, 47 ', 49', 5 1 'except for the third straight portion 45c', 47c ', 49c, 5 1c Except for the capacitor 19, it has the same structure and arrangement as the antenna wires 45, 47, 49, and 51 of FIG. 2. Therefore, this high-frequency antenna 13 'is the same as the high-frequency antenna 13 of FIG. Between the power supply sections 41 ', 42', 43 ', and 44', there is no outer part of the central portion 60 'of the antenna wire, and an antenna wire 45' is arranged, and 47 'printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The first straight lines 45a ', 47a', 47a ', 49a', 51a ', and the second straight lines 45b', 47b ', 49b', and 5 lb 'of the antennas of 49, 49', and 5 ' A portion 61 'is provided with a fourth linear portion 45d', 47d ', 49d', and 5 Id ', and a slightly square peripheral edge portion 62' in which the antenna wires closely exist, and is formed between the central portion 61 'and the peripheral edge portion 62'. The middle portion 63, where the antenna wires of the third straight portion 45c ', 47c', 49c ', and 5 1c' are loose, is located. The antenna wires 45 ', 47', 49 ', and 5 1' are all the same length and connected Applicable to China Paper Standard (CNS) A4 (210X297 mm) at this paper size -20 -200303156 A7 B7 V. Description of the Invention (The terminal capacitor 18 of each antenna and the capacitor 19 provided on the third straight line have the same capacitance, so 'the current flowing through each antenna is equal. (Please read the back Please fill in this page again.) In this way, the high-frequency antenna 1 3 ′ of FIG. 4 is formed with a central portion 6 1 ′ and a peripheral portion 62 ′ where the antenna wires are closely arranged, similarly to the high-frequency antenna of FIG. 2. The intermediate portion 63 ′ of the loose arrangement of the antenna wire is configured such that a closely existing portion of the antenna wire interacts with a loose portion of the antenna wire, and there is no antenna wire at the central portion 60 ′ of the corresponding power supply portion. Therefore, even if the substrate G is For a very large substrate, the length of one side is more than 1 m, and the plasma density will not be uneven due to the deviation of the electric field distribution, and the plasma density will not decrease due to the capacitive coupling component. At the same time, the high-frequency antenna I3 'is a multiplexed antenna in which four antenna wires are separated from the power supply member. Therefore, compared with one antenna wire, the inductance can be reduced to 1/4, and the antenna impedance can be reduced. Therefore, the antenna potential can be effectively reduced, thereby making it less likely to cause uneven plasma density or an increase in capacitive coupling components. At the terminal portions of the antenna wires 45 ', 47', 49 ', and 51' and the printing department of the Consumer Cooperative of the Intellectual Property Bureau of the 3rd Ministry of Economic Affairs, a capacitor 18 and a capacitor 19 are connected in series to each antenna wire. It can also reduce the antenna impedance, which can effectively reduce the antenna potential. In addition, this high-frequency antenna 13 'is a quadruple antenna, so compared with the 8-fold high-frequency antenna shown in FIG. 2, the effect of reducing the antenna impedance is substantially smaller, but because each antenna wire has two capacitors connected in series 18, 19, so the effect of reducing the antenna impedance and the effect of lowering the antenna potential midway can be obtained, and the effect of the high-frequency antenna 1 3 close to Figure 2 can be obtained. At this time, if the capacitor 19 is located at the center of the length of each antenna wire, the above effects can be further enhanced. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -21-200303156 Α7 Β7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (θ Furthermore, the present invention is not limited to the above embodiment There may be various modifications. For example, the high-frequency antenna of the above embodiment is shown in Fig. 2, but it is not limited to this, as long as the antenna wires are formed densely so that the electric field on the portion to be processed is uniform. For example, the example in Figure 2 is provided with four power supply sections, but three or less or five or more can be used, and the number of antennas extending from each power supply section is not limited to one or two, three (antenna's The total number is 12 or more. At the same time, each antenna wire is bent to form a square, but it is not limited to this. It can be bent into other shapes including curves according to the shape of the substrate. The more the antenna wire, the more impedance The greater the reduction effect, the higher the multiple, the antenna configuration will be difficult, and the capacitive coupling component tends to increase easily. Therefore, this kind of fault will never occur and can be effective From the viewpoint of the effect of reducing the swing impedance, the 8-fold antenna shown in Fig. 2 is the most ideal. In the above embodiment, the entire high-frequency antenna is separated from the dielectric wall by the same distance, but it can also be centered as shown in Fig. 5 The distance between the part and the dielectric wall is larger than the distance between the peripheral part and the dielectric wall. As a result, the power supply part with the highest potential of the antenna is far away from the dielectric wall, which can effectively reduce the capacitive coupling component. At the same time For the same reason, only the central part of the antenna can be separated. If the capacitive coupling is sufficiently reduced by other measures, the antenna may not be separated from the dielectric wall. In the above embodiment, one antenna wire is provided for each antenna. Or two capacitors, but three or more capacitors can be installed. The location of the capacitors is not limited to the above embodiment. Moreover, the above embodiment shows the application of the present invention to an etching device (please read the precautions on the back before filling (This page) This paper size applies to Chinese National Standard (CNS) A4 specification (210 X 297 mm) -22- 200303156 A7 B7 V. Description of invention (10 (please read first Read the note on the back side and fill in this page) example, but it is not limited to an etching device, but can also be applied to other plasma processing devices such as sputtering or CVD film formation. The processing substrate is an LCD substrate. It is not limited to this, and can also be applied when processing other substrates such as semiconductor wafers. [Effects of the Invention] As described above, according to the present invention, since the high-frequency antenna is arranged in a substantially flat shape, it has the density of antenna wires. It becomes a loose part and a tight part, and there is no antenna in the center part of the corresponding power supply part, so that the capacitive coupling component will not increase. Therefore, even for large substrates, the plasma density will not decrease due to the capacitive coupling component. The deviation of the electric field distribution makes the plasma density non-uniform, and enables uniform plasma treatment with higher density plasma. [Brief Description of the Drawings] Fig. 1 is a sectional view showing an inductively coupled plasma etching apparatus according to an embodiment of the present invention. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 2 is a plan view showing the structure of a high-frequency antenna provided in the device shown in Figure i. Fig. 3 is a diagram showing the electron density distribution of the high-frequency antenna in the lower position of Fig. 2. Fig. 4 is a plan view showing the structure of another example of the high-frequency antenna. FIG. 5 is a cross-sectional view showing another arrangement state of the high-frequency antenna. This paper size is applicable to Chinese National Standard (CNS) M specification (21 × 297 public directors) -23- 200303156 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (1 ... ..Body container 2 .........- dielectric body wall 3 ---....... antenna g 4 .... processing room 13 --..... local frequency antenna 15 ........ High-frequency power supply 16 ---... Power supply member 20 ---... Processing gas supply system 22 -......... Sensor 30 -....... Exhaust devices 41, 42 ,, 43, 44 ......... Power supply part 4 5, 4 6, 4 7, 4 8, 4 9, 5, 0, 5 1, 5 2 .... Antenna wire 45a, 46a, 47a, 48a, 49a, 50a, 51a, 52a ......... The first straight portion 45b '46b, 47b, 48b > 49b, 50b' 51b, 52b ... ..... 2nd straight portion 45c, 46c, 47c, 48c, 49c, 50c, 51c, 52c ---------- 3rd straight portion 45d, 46d, 47d, 47c > 49d-50d , 51d, 52d .......... 4th straight part 6〇 ---------- Central division 6 1 .......... Central part 62-- -------- Circumferential Section 63—— …… Intermediate Section. This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the back of the precautions to fill out this page) -24-

Claims (1)

200303156 A8 B8 C8 D8 6. Scope of patent application 1 1. An inductively coupled plasma processing device is provided with: a processing chamber that accommodates a substrate to be processed and performs plasma processing; a substrate mounting table on which the substrate to be processed is placed in the processing chamber A processing gas supply system for supplying a processing gas into the processing chamber; an exhaust system for exhausting the processing chamber; a dielectric wall constituting an upper wall of the processing chamber; an antenna wire is formed into a predetermined pattern and arranged in a corresponding manner; A portion of the dielectric wall outside the processing chamber is supplied with a predetermined high-frequency power to form a high-frequency antenna for inducing an electric field in the processing chamber; and a high-frequency power source is supplied to a vicinity of a center portion of the high-frequency antenna. The power-supplying member of the high-frequency power that is sent to the high-frequency antenna forms an inductively-coupled plasma in the processing chamber and applies a plasma treatment to the substrate to be processed. The high-frequency antenna includes: The antenna wire has a sparse density part and a dense part, and at the same time, its central part is not There are antenna wires. 2. The inductively-coupled plasma processing device according to item 1 of the scope of the patent application, wherein the high-frequency antenna is divided into a plurality of antenna wires from the power-supplying member and is multiplexed. 3. The inductively coupled plasma processing device according to item 2 of the scope of patent application, wherein there are 8 antenna wires. 4. The inductively-coupled plasma processing device according to any one of claims 1 to 3, wherein the antenna wire is connected in series with one or a duplicate paper size applicable to Chinese National Standard (CNS) A4 specification (210X297) Mm) (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -25- 200303156 A8 B8 C8 D8 6. Application for patents 2 Several capacitors. 5. The inductively coupled plasma processing device according to item 2 or item 3 of the scope of patent application, wherein each of the plurality of antenna wires is connected in series with one or a plurality of capacitors. 6. The inductively-coupled plasma processing device according to any one of claims 1 to 5, wherein a part or all of the high-frequency antenna is separated from the dielectric wall. 7. The inductively coupled plasma processing device according to item 6 of the scope of patent application, wherein the distance from the central portion of the high-frequency antenna to the dielectric wall is greater than the distance from the peripheral portion to the dielectric wall. . 8. The inductively-coupled plasma processing device according to item 3 of the scope of the patent application, wherein the high-frequency antenna has, around its central portion, a plurality of antennas connected at positions that are arranged at approximately the same radius from the center and staggered by 90 °, respectively. The four power supply parts of the above power supply member have two antenna wires extending outward from each power supply part, and the two antenna wires extending from each power supply part are arranged close to each other in parallel and have: extending from the power supply part to The first straight line portion at the intermediate position of the antenna periphery; the inward curve at the terminal position of the first straight line portion. The curve 900 extends to the second straight line portion to the intermediate position of the antenna periphery; the terminal ends at the second straight line portion. The position is curved outward in the oblique direction, and extends to the third linear portion of the peripheral portion of the antenna. The fourth linear portion is bent at the terminal position of the third linear portion, and extends slightly parallel to the first linear portion. The first straight line portion extended by the power supply portion is sequentially shifted by 90 °, and the first straight portion and the second straight portion of the two antenna wires are respectively extended from the four power supply portions to form a center in which the antenna wires are closely arranged. The paper size is formed by the 4th straight part. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm): '(Please read the precautions on the back before filling this page)-Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives-26-200303156 A8 B8 C8 D8 VI. Patent application scope 3 The peripheral edge portion of the antenna wire is closely arranged, and the third straight line portion forms the middle portion of the loosely arranged antenna wire, and the central portion of the inside of the four power supply units There are no antenna wires. 9. The inductively coupled plasma processing device according to item 8 of the scope of the patent application, wherein each of the eight antenna wires is composed of four groups of the same length. 10. The inductively coupled plasma processing device according to item 8 of the scope of patent application, wherein an inner portion of the two antenna wires extending from each of the power supply portions has an inward position at a terminal position of the fourth linear portion. The fifth straight part that is bent by 90 ° and extended. 1 1. The inductively coupled plasma processing device according to any one of claims 8 to 10 in the patent application, wherein the peripheral side ends of the antenna wires are grounded via capacitors. 12. The inductively-coupled plasma processing device according to item 2 of the scope of the patent application, wherein the high-frequency antenna has a center portion around the center portion, and the antennas are connected at approximately the same radius from the center and are respectively staggered by 90M. The four power supply parts of the power supply member described above each extend one outward from each power supply part. A total of four antenna wires, and antenna wires extending from each power supply part, have a first line extending from the power supply part to an intermediate position on the periphery of the antenna. A straight portion; a second straight portion bent at 90 ° inward from the terminal position of the first straight portion and extending to an intermediate position of the antenna periphery; a bent portion extending diagonally outward at the terminal position of the second straight portion and extending to The third straight line portion of the antenna peripheral portion; the fourth straight line portion bent at the terminal position of the third straight line portion and extending slightly parallel to the first straight line portion, and the antenna wire extending from the adjacent power supply portion. Paper size Applicable to China National Standard (CNS) A4 specification (210 × 297 mm) --------- Pain—— (Please read the precautions on the back before filling this page), 1T + Bureau of Intellectual Property of the Ministry of Economic Affairs Printed by the Industrial and Consumer Cooperatives 200303156 A8 B8 C8 D8 VI. The first straight part of the patent application Ganwei 4 is staggered by 90 ° in sequence, and the first straight part and the second straight line of the antenna wire extending from the four power supply parts are sequentially The central portion of the antenna wire is closely arranged, the peripheral portion of the antenna wire is closely arranged by the fourth linear portion, the intermediate portion of the antenna wire is loosely arranged by the third linear portion, and the central portion inside the four power supply portions is There are no antenna wires. 1 3. The inductively-coupled plasma processing device according to item 12 of the scope of patent application, wherein a capacitor is installed between the peripheral end portion of each of the antenna wires and the third linear portion. 14. The inductively-coupled plasma processing apparatus according to item 13 of the scope of the patent application, wherein the capacitor mounted on the third linear portion is located at the center of the length of the antenna wire. (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -28-