TW201633363A - Plasma processing apparatus - Google Patents

Abstract

Provided is a plasma processing apparatus capable of maintaining mechanical strength while installing metal windows by using lighter mechanism. In a vacuum process space (100), plasma process is performed for a processed substrate (G) in plasma processing apparatus (1). Processing vessel (10) made of metal has a placing stage for the processed substrate (G). At a position where block is formed over an opening thereof, a metal window (3) with conductivity is provided through an insulation member (31) in between. The metal window (3) is suspended and supported on a top part (61) arranged at top side of a plasma antenna (5) for producing plasma. Furthermore, the top part (61) is suspended and supported by top supporting mechanism (7) having cross parts (71, 711) and a frame structure of the foot column part (72).

Description

Plasma processing device

The present invention relates to a plasma processing apparatus for performing plasma treatment of a substrate to be processed by a plasma-treated processing gas.

In the manufacturing process of a flat panel display (FPD) such as a liquid crystal display (LCD), there is a plasma processing in which a plasma-treated processing gas is supplied to a glass substrate as a substrate to be processed, and etching treatment or film formation processing is performed. Engineering. In the plasma treatment, various plasma processing apparatuses such as a plasma etching apparatus or a plasma CVD apparatus are used. In recent years, as a method of plasma processing gas, an inductively coupled plasma (ICP) having one of the advantages of high-density plasma having a high degree of vacuum has been attracting attention.

On the other hand, the size of the glass substrate is progressing toward enlargement. In a rectangular glass substrate such as an LCD, a plasma processing apparatus capable of processing a length of a short side × a long side of about 2200 mm × about 2400 mm, or even about 2800 mm × about 3000 mm is required.

As the plasma device is enlarged, it is disposed on the upper side of the glass substrate, and is disposed opposite to the plasma antenna that generates the inductively coupled plasma. The dielectric window is also large. However, since a dielectric material such as quartz constituting a dielectric window is small in mechanical strength and brittle, it is not suitable for enlargement. Then, Patent Document 1 describes a plasma processing apparatus including a metal window made of metal having a higher rigidity than quartz.

Here, in order to generate the inductively coupled plasma via the metal window, it is necessary to mount the metal window in a state insulated from the metal processing container constituting the body of the plasma processing apparatus. Further, in the above-described metal window constituting the processing space to be a vacuum atmosphere, since not only the self-weight but also the atmospheric pressure is applied, it is necessary to support the metal window so as to withstand the force. Therefore, as the size of the metal window increases, there is a problem that the mechanism for attaching the metal window to the processing container is also increased in size and weight.

Here, Patent Document 2 describes that a process chamber upper cover member that is subjected to a modification process of irradiating laser light to a glass substrate is provided with a rib member that reinforces mechanical strength, and a window for suppressing transmission of laser light is suppressed. A laser annealing device that produces a tilt or deformation. Further, Patent Document 3 describes that the outer wall surface of the chamber portion of the vacuum processing apparatus for performing the processing of the glass substrate for FPD is composed of a rib member and a plate-shaped joint member of the joint rib member, and is configured. The reinforcing member is detachably attached to the outer wall surface by bolts.

However, in any of the above-mentioned Patent Documents 2 and 3, there is no disclosure of a method of providing a large metal window while maintaining the state of being insulated from the processing container.

[prior technical literature] [Patent Document]

[Patent Document 1] Japanese Laid-Open Patent Publication No. 2012-227427, paragraph 0018, Fig. 1

[Patent Document 2] Japanese Patent No. 3451478: Paragraphs 0002, 0018, Figs. 1, 2

[Patent Document 3] Japanese Patent No. 5232801: Paragraphs 0028 to 0029, Fig. 3

The present invention has been made in view of such circumstances, and an object thereof is to provide a plasma processing apparatus in which a metal window is attached by a lightweight mechanism while maintaining mechanical strength.

In the plasma processing apparatus of the present invention, the substrate to be processed in the processing space to be vacuum-exhausted is subjected to plasma treatment by a plasma-treated processing gas, and the plasma processing apparatus is characterized in that it is made of metal. The processing container includes a mounting table on which the substrate to be processed is placed, is open to the upper surface of the mounting table, and is electrically grounded; and the conductive metal window is disposed at a position blocking the opening of the processing container Forming the above-described processing space, and being provided in a state of being insulated from the processing container via an insulating member; the plasma antenna is disposed on the opposite side of the metal window The upper side of the metal window is used to plasmaize the processing gas by inductive coupling; and the metal window supporting mechanism is provided with a ceiling portion disposed on the upper side of the plasma antenna so as to face the metal window. And a plurality of first suspension portions that are disposed on the ceiling portion for suspending and supporting the metal window; and a slab support structure of the slab structure, which is provided to suspend and support the slab portion from the upper side a cross frame portion of the plurality of second suspension portions and a leg portion for supporting the horizontal frame portion.

The plasma processing apparatus described above may have the following configuration.

(a) The metal window is divided into a plurality of partial windows, and adjacent partial windows are insulated from each other with an insulating member interposed therebetween. An insulating member that insulates the processing container and the metal window, and an insulating member that insulates adjacent portions of the window of the metal window are supported by the processing container.

(b) The above-mentioned leg portion is provided on the processing container around the opening.

(c) The ceiling portion is made of a metal that is electrically grounded, and the first suspension portion includes an insulating member that insulates the metal window and the ceiling portion. The cross frame portion and the leg portion of the slab support mechanism are lower in electrical conductivity than the slab portion, and are made of metal having high mechanical strength.

(d) The horizontal frame portion is formed in an arch shape.

(e) The metal window also serves as a gas shower head for supplying a processing gas to the processing space.

In the present invention, since the metal window constituting the processing space is suspended and supported by the ceiling portion, and the slab supporting mechanism is suspended and supported by the slab supporting mechanism, the load applied from the metal window can be dispersed and kept at the side. The mechanical strength required to mount the metal window of the container is treated, and the mechanism supporting the metal window is lightened.

G‧‧‧glass substrate

1, 1a~1c‧‧‧ plasma processing equipment

10‧‧‧ container body

100‧‧‧Processing space

11‧‧‧Metal frame

13‧‧‧ mounting table

3‧‧‧Metal windows

30‧‧‧Some windows

31‧‧‧Insulating components

5‧‧‧High frequency antenna

61, 61a‧‧‧Surface Department

62‧‧‧Metal window suspension

7, 7a~7c‧‧‧Sky support mechanism

71‧‧‧ horizontal bar

711‧‧‧ inclined section

72‧‧‧Foot section

721‧‧‧Surface Support

73‧‧‧Aisan suspension

8‧‧‧Control Department

Fig. 1 is a longitudinal side view of a plasma processing apparatus in accordance with an embodiment.

Figure 2 is a plan view showing a portion of the above plasma processing apparatus broken.

Fig. 3 is a longitudinal side view showing a state in which a metal window provided in the plasma processing apparatus is mounted.

Fig. 4 is a longitudinal side view showing a plasma processing apparatus according to a comparative example.

Fig. 5 is a partially broken plan view showing a modification of the sunroof support mechanism provided in the plasma processing apparatus.

Fig. 6 is a longitudinal side view showing another modification of the above-described roof supporting mechanism.

Fig. 7 is a longitudinal side view showing still another modification of the above-described roof supporting mechanism.

Hereinafter, the configuration of the plasma processing apparatus 1 according to the embodiment of the present invention will be described with reference to Figs. 1 to 3 .

The plasma processing apparatus 1 can be used for forming a metal film, an ITO film, an oxide film, or the like when a thin film transistor is formed on a rectangular substrate as a substrate to be processed, for example, a substrate G for FPD, or etching the film Various plasma treatments such as etching treatment of the film and ashing treatment of the photoresist film. Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. Further, the plasma processing apparatus 1 is not limited to the substrate G for FPD, and the substrate G for a solar cell panel can be used for the above various plasma treatments.

As shown in the longitudinal side view of Fig. 1, the plasma processing apparatus 1 is provided with a container body 10 having a rectangular tube shape made of a conductive material such as aluminum whose inner wall surface is anodized, and the container body 10 is electrically Ground. An opening is formed in the upper surface of the container body 10, and the opening is hermetically sealed by a rectangular metal window 3 provided to be insulated from the container body 10. The space surrounded by the container body 10 and the metal window 3 serves as the processing space 100 of the substrate G, and the space above the metal window 3 serves as the antenna chamber 50 in which the high-frequency antenna (plasma antenna) 5 is disposed. Further, in the side wall of the processing space 100, a loading/unloading port 101 for loading and unloading a glass substrate (hereinafter simply referred to as a substrate) G and a gate valve 102 for opening and closing the loading/unloading port 101 are provided.

On the lower side of the processing space 100, a mounting table 13 for mounting the substrate G is provided so as to face the metal window 3. The mounting table 13 is made of a conductive material such as aluminum whose surface is anodized. The substrate G placed on the mounting table 13 is electrostatically sealed The clamp is held by the adsorption. The mounting table 13 is housed in the insulator frame 14 and is disposed on the bottom surface of the container body 10 via the insulator frame 14.

The second high frequency power supply 152 is connected to the mounting table 13 via the matching unit 151. The second high-frequency power source 152 applies high-frequency power for biasing to the mounting table 13, for example, high-frequency power having a frequency of 3.2 MHz. The ions in the plasma generated in the processing space 100 are introduced to the substrate G by the self-bias generated by the high-frequency power for the bias voltage.

Further, in the mounting table 13, in order to control the temperature of the substrate G, a temperature control mechanism composed of a heating means such as a ceramic heater or a refrigerant flow path, a temperature sensor, and heat for supplying the back surface of the substrate G are provided. The gas flow path for the He gas is conveyed (all are not shown).

Further, an exhaust port 103 is formed on the bottom surface of the container body 10, and a vacuum exhaust unit 12 including a vacuum pump or the like is connected to the exhaust port 103. The inside of the processing space 100 is evacuated by vacuum to a pressure at the time of plasma treatment.

The metal window 3 is formed of, for example, a non-magnetic, electrically conductive metal, aluminum, or an alloy containing aluminum. Further, in order to improve the plasma resistance of the metal window 3, a dielectric film or a dielectric cap may be provided on the surface of the processing space 100 of the metal window 3. Examples of the dielectric film include an anodized film or a thermally sprayed ceramic film. Further, examples of the dielectric cover include quartz or ceramics.

As shown in Figs. 1 and 2, a metal frame 11 having a rectangular frame body made of a metal such as aluminum is provided on the upper surface side of the side wall of the container body 10. Between the container body 10 and the metal frame 11 is provided to The processing space 100 maintains a hermetic sealing member 110. Here, the container body 10 and the metal frame 11 constitute the processing container of this embodiment.

Further, the metal window 3 of this example is divided into a plurality of partial windows 30 which are disposed inside the metal frame 11 and integrally constitute a rectangular metal window 3. The partial windows 30 which are divided from each other are electrically insulated from the metal frame 11 or the container body 10 on the lower side thereof by the insulating member 31, and the adjacent partial windows 30 are also insulated from each other by the insulating member 31.

The insulating member 31 is supported by, for example, the metal frame 11. Further, each of the partial windows 30 insulated from the metal frame 11 or the adjacent partial window 30 by the insulating member 31 is suspended from the top plate portion 61 independently of the insulating members 31. The mechanism for suspending the supporting metal window 3 (partial window 30) will be described in detail later.

Further, the divided shape of the partial window 30 is not limited to a rectangular shape. In addition, in order to reinforce the insulating member 31, a metal beam may be provided so that the inner surface of the divided metal frame 11 is viewed from the upper surface side, and the insulating member 31 may be supported by the metal beam.

Further, the partial window 30 of this example also serves as a shower head for supplying a processing gas. As shown in FIGS. 1 and 3, a process gas diffusion chamber 301 for diffusing a processing gas is formed inside each partial window 30. Further, a plurality of processing gas discharge holes 302 for supplying a processing gas to the processing space 100 from the processing gas diffusion chamber 301 are formed under the partial windows 30. Further, as shown in FIG. 1, the process gas diffusion chamber 301 of each partial window 30 is connected to the process gas supply unit 42 via the gas supply pipe 41. The film forming process, etch described above, is supplied from the process gas supply unit 42. Processing gas required for engraving, ashing, etc. Further, for convenience of illustration, although the state in which the processing gas supply unit 42 is connected to one partial window 30 is shown in FIG. 1, actually, the processing gas diffusion chamber 301 of each partial window 30 is connected to the processing gas supply unit 42. .

Further, inside the antenna room 50, a high frequency antenna 5 is disposed to face the partial window 30. The high frequency antenna 5 is disposed to be spaced apart from the partial window 30 by, for example, a spacer formed of an insulating member (not shown). For example, the high-frequency antenna 5 is formed in a spiral shape so as to surround the circumferential direction of the rectangular metal window 3 in a plane corresponding to each of the partial windows 30. Further, the shape of the radio-frequency antenna 5 is not limited to the vortex, and may be a loop antenna in which one or a plurality of antenna wires are formed in a ring shape. Further, even if a plurality of antenna lines are wound with one offset angle, and the entire antenna is formed into a spiral shape. In this manner, when the antenna wire is provided so as to surround the metal window 3 or the partial window 30 constituting the metal window 3 so as to surround the circumferential direction thereof, the configuration of the radio-frequency antenna 5 is employed.

The first high frequency power supply 512 is connected to each of the high frequency antennas 5 via the matching unit 511. In each of the high-frequency antennas 5, high-frequency power of, for example, 13.56 MHz is supplied from the first high-frequency power source 512 via the matching unit 511. Accordingly, an eddy current is excited between the plasma treatments and the respective surfaces of the partial windows 30, and the eddy current forms an induced electric field inside the processing space 100. The process gas discharged from the gas discharge hole 302 is plasma-treated inside the processing space 100 by an induced electric field.

Further, as shown in FIG. 1, the plasma processing apparatus 1 is provided with a control unit 8. The control unit 8 is provided with a CPU having or not shown (Central Processing Unit) and a computer of the memory unit, wherein a program for outputting a step (command) group for outputting a control signal is stored in the memory unit, and the control signal is implemented to perform vacuum in the processing space 100 in which the substrate G is disposed. The operation of the substrate G is performed by exhausting the plasma using the high frequency antenna 5 to plasma the processing gas. The program is stored in a memory medium such as a hard disk, a CD, a magneto-optical disk, a memory card, etc., and is installed in the memory unit.

In the plasma processing apparatus 1 having the configuration described above, the mechanism for supporting the metal window 3 needs to withstand the atmospheric pressure applied to the metal window 3 in addition to the weight of the metal window 3. However, for example, the insulating member 31 disposed around each of the partial windows 30 is not suitable as a mechanism for supporting a member to which a large force is applied because the mechanical strength is small and brittle. Further, it is understood that when the partial insulating member 31 is used to support the partial window 30 by the reinforcing member 31 such as a metal beam, not only the area of the metal beam which does not contribute to the plasma formation but also the induced electric field for forming the plasma is weakened. .

As the supporting means of the metal window 3, as shown, for example, in the plasma processing apparatus 1a of Fig. 4, the periphery of the antenna chamber 50 is surrounded by the side wall portion 63, and the ceiling portion 61a is disposed on the upper surface side thereof to make the metal window 3 and The roof portion 61a faces up and down, and the mechanism for supporting the partial windows 30 is suspended from the roof portion 61a via the metal window hanging portion 62. Here, the ceiling portion 61a is made of aluminum or the like having high conductivity. Here, the strength design is performed on the premise that the support mechanism is formed by the aluminum top plate portion 61a. However, as described above, the plasma processing apparatus 1a of the substrate G having a size of about 2200 mm × about 2400 mm is processed. In order to support the load applied from the metal window 3 side, the thickness of the roof portion 61a is also 10 cm or more. I know that in order to support such a cumbersome The ceiling portion 61a also increases the thickness of the side wall portion 63, and the support mechanism of the metal window 3 is increased in size and weight.

In order to solve the above problem, the plasma processing apparatus 1 of the present embodiment is provided with a method of supporting and supporting the metal window 3 by suspending the use of the ceiling portion 61 as shown in FIG. The structure of the slab structure support mechanism 7 of the skeleton structure. By reinforcing the roof portion 61 with the roof supporting mechanism 7, the thickness of the roof portion 61 is reduced to 10 cm or less, and by making the roof supporting mechanism 7 into a skeleton structure, the plasma processing apparatus 1a of Fig. 4 is omitted. The arrangement of the side wall portions 63.

Hereinafter, the configuration of the support mechanism of the metal window 3 will be described in detail.

As shown in FIG. 1, for example, the ceiling portion 61 is formed of an aluminum plate material having a size slightly the same as that of the metal window 3, and is disposed so as to face the metal window 3 with the antenna chamber 50 interposed therebetween. As shown in Fig. 1, the top plate portion 61 is electrically grounded. Furthermore, between the lower surface of the ceiling portion 61 and the upper portion of the partial window 30, a plurality of metal window suspension portions 62 as the first suspension portion are mounted, and the metal window suspension portions 62 are suspended to support the metal window. 3 (partial window 30). Further, here, the partial window 30 is insulated from the metal hanging portion 62 so that the metal window hanging portion 62 is electrically floated. The roof portion 61 and the metal window hanging portion 62 correspond to the metal window supporting mechanism of the present embodiment.

For example, as shown in FIG. 3, the metal window hanging portion 62 is a metal rod-shaped member in which the flange portion 621 is formed at the upper end portion. The flange portion 621 of the metal window hanging portion 62 is surrounded by the bolt 622 and the ceiling portion 61. link.

Furthermore, even if the metal window hanging portions 62 are disposed at the boundary of the adjacent partial windows 30, the two partial windows 30 are suspended and supported by a metal window hanging portion 62, thereby suppressing the metal window hanging portion 62. The number of settings can also be increased. Further, even in the metal window hanging portion 62, the gas supply pipe 41 which has been described above for supplying the processing gas to the processing gas diffusion chamber 301 of the partial window 30 may be formed.

As described using the plasma processing apparatus 1a of Fig. 4, when the metal window 3 to which a strong tensile load is applied is applied only by the roof portion 61a, a bulky plate material has to be used, so that the supporting mechanism of the metal window 3 is used. Large weight. Then, in the plasma processing apparatus 1 of the present embodiment, the configuration in which the roof portion 61 is supported by the roof supporting mechanism 7 using the skeleton structure is further suspended.

As shown in FIG. 1, the roof supporting mechanism 7 has a skeleton structure including a plurality of horizontal bar portions 71 that are stretched on the upper surface side of the roof portion 61, and a leg portion 72 that supports the respective horizontal bar portions 71. For example, each of the leg portions 72 is a rod-shaped member that is disposed to protrude toward the upper side, and is made of iron having a higher mechanical strength (bending length or tensile strength) than aluminum. Each of the leg portions 72 is coupled to the upper surface side of the metal frame 11 via a flange portion 720 formed at a lower end portion thereof.

At the upper end of the leg portion 72, a bar-shaped horizontal bar portion 71 extending in the lateral direction is connected via an inclined portion 711 bent toward the upper side of the container body 10 when viewed from the upper side. Even the inclined portion 711 of the horizontal bar portion 71 and both ends thereof is configured by a member made of iron. again The strength of the roof supporting mechanism 7 is increased by forming the arch structure composed of a plurality of straight lines by the horizontal bar portion 71 and the inclined portion 711. The horizontal bar portion 71 and the inclined portion 711 correspond to the horizontal frame portion of the present embodiment. Further, it is a matter of course that the cross frame portion is constituted by a curved arch bridge.

As shown in Fig. 2, each of the horizontal bar portions 71 is formed from the central portion of each side of the metal frame 11 (the side wall of the container body 10) and the four corners of the metal frame 11 toward the upper portion of the upper side of the ceiling portion 61. The connecting portions 712 formed by the metal rectangular frame are connected to each other. In addition to the power supply line or the gas supply pipe 41 of the high-frequency antenna 5, the opening 710 of the connection portion 712 is provided with a distributor or a matching device (not shown) for distributing the electrodes to the respective high-frequency antennas 5 on the upper surface of the connection portion 712. 511 and so on.

A plurality of slab suspension portions 73 as second suspension portions are attached to the lower surface of the horizontal bar portion 71 and the inclined portion 711, and the slab suspension portion 73 suspends and supports the slab portion 61. Further, in this example, the rod-shaped column member 73a projecting from the lower surface of the horizontal bar portion 71 toward the lower side and the plate-like rib member 73b projecting from the lower surface of the inclined portion 711 toward the lower side are two types. The ceiling suspension portion 73.

As shown in FIG. 3, the column member 73a is a rod-shaped member made of iron having a flange portion 731 at the upper end portion and the lower end portion, and the flange portion 731 at the upper end portion side is provided by the bolt 732 and the horizontal rod portion 71. Link below. Further, the flange portion 731 on the lower end side of the column member 73a is coupled to the upper surface of the top plate portion 61 by a bolt 732. Even if the rib member 73b is connected to the lower surface of the inclined portion 711 via the flange portion or the like and the upper surface of the top plate portion 61 is the same, the illustration is omitted. And even if the column member 73a, The 73b may be integrated with the horizontal bar portion 71 and the inclined portion 711 by welding or the like.

According to the configuration described above, the roof portion 61 that suspends the supporting metal window 3 (partial window 30) is again supported by the roof supporting mechanism 7 (the horizontal bar portion 71, the inclined portion 711, and the leg portion 72). The construction of the suspension support.

Hereinafter, the action of the plasma processing apparatus 1 relating to the embodiment of the present invention will be described.

First, the gate valve 102 is opened, and the substrate G is carried into the processing space 100 through the loading/unloading port 101 from the adjacent vacuum transfer chamber by a transport mechanism (none of which is not shown). Next, the substrate G is placed on the mounting table 13 and fixed by an electrostatic chuck (not shown), and the transport mechanism is retracted from the processing space 100 to close the gate valve 102.

Then, the processing gas is supplied from the processing gas supply unit 42 to the processing space 100 through the processing gas diffusion chamber 301 of each partial window 30, and the vacuum exhausting portion 12 performs vacuum evacuation in the processing space 100 to process the processing space. The pressure within 100 is adjusted to a pressure atmosphere of, for example, 0.66 to 26.6 Pa. Further, He gas for heat transfer is supplied to the substrate G from a gas flow path (not shown).

Next, high-frequency power is applied to the high-frequency antenna 5 from the first high-frequency power source 512, whereby a uniform induced electric field is generated in the processing space 100 via the metal window 3. As a result, the process gas is plasmad in the processing space 100 by the induced electric field to generate a high-density inductively coupled plasma. By the high-frequency power for bias applied to the mounting table 13 from the second high-frequency power source 152, ions in the plasma are introduced toward the substrate G to perform the substrate G. Plasma treatment.

Further, when the plasma treatment is performed only at the time set in advance, the supply of electric power from the respective high-frequency power sources 512 and 152, the supply of the processing gas from the processing gas supply unit 42 and the evacuation of the vacuum in the processing space 100 are performed. The substrate G is carried out in the reverse order.

The inside of the processing space 100, which has been described above, is evacuated to a high vacuum state as described above, and the metal window 3 (partial window 30) disposed on the upper side of the processing space 100 is subjected to atmospheric pressure in addition to its own weight. . The metal window 3 is suspended and supported by the roof portion 61 against the force, and is held between the container body 10 and the processing space 100.

Here, the roof portion 61 of the suspension supporting metal window 3 is further suspended and supported by the slab supporting mechanism 7 having a skeleton structure in which the mechanical strength is higher than that of the member of the slab portion 61, and is reinforced. . Further, since the leg portion 72 of the roof supporting mechanism 7 is attached to the upper surface side of the metal frame 11, the hanging load of the metal window 3 is dispersed to the leg portion 72 via the roof supporting mechanism 7, and is converted into a push. The force of the metal frame 11 (i.e., the side wall of the container body 10) is pressed. The container body 10 having the pressure resistance to the vacuum atmosphere in the processing space 100 has sufficient strength to stably support the roof supporting mechanism 7 against the above pressing force.

According to the plasma processing apparatus 1 of the present invention, the following effects are obtained. The metal window 3 constituting the processing space 100 is suspended and supported by the roof portion 61, and the roof portion 61 is suspended and supported by the roof supporting mechanism 7 having a skeleton structure composed of a member having high mechanical strength. The suspended load of the metal window 3 is dispersed.

As a result, it is possible to hold the supporting metal window 3 as compared with the aluminum ceiling portion 61a shown in the plasma processing apparatus 1a of Fig. 4 and the side wall portion 63 provided at the peripheral portion thereof. The mechanical strength required to mount the metal window 3 is made lighter by the mechanism supporting the metal window 3.

Further, when compared with the side wall portion 63 of Fig. 4, the "skeleton structure" of the roof supporting mechanism 7 of the present invention means the short side and the length of the metal frame 11 (the side wall of the container body 10) by the lateral width, respectively. The case where the shield supporting mechanism 7 is constituted by a short member. For example, a member having a skeleton structure uses a member having a width of several cm to several tens of cm.

Here, the configuration of the roof supporting mechanism 7 is not limited to the example shown in FIGS. 1 to 3, and various changes can be employed.

In the respective drawings of FIGS. 5 to 7 described below, the same components as those shown in FIGS. 1 to 3 are denoted by the same reference numerals as those shown in the drawings.

As shown in FIG. 2, the planar shape of the top plate support mechanism 7 is not limited to the case where each of the horizontal bar portions 71 is arranged to extend radially from the central portion side of the container body 10. For example, as shown in FIG. 5, a configuration in which a plurality of horizontal bar portions 71 are arranged in parallel with each other in the short-side direction of the container body 10 may be employed.

Furthermore, the method of supporting the roof portion 61 is not limited to the case where it is supported only by the suspension support. For example, as shown in the solar panel supporting mechanism 7a of the plasma processing apparatus 1b shown in Fig. 6, even for the roof portion 61 The peripheral portion may be supported from the lower side by the roof supporting portion 721 provided on the side surface of the leg portion 72.

Moreover, the roof supporting mechanism 7 does not need to be disposed above the metal frame 11 (on the side wall of the container body 10). For example, as in the slab support mechanism 7b of the plasma processing apparatus 1c shown in Fig. 7, the leg portion 72 may be provided on the bottom surface or the pedestal surface of the plasma processing apparatus 1c. Here, the height position of the bottom surface or the seating surface of the fixed leg portion 72 does not have to be lower than the top plate portion 61. When the leg portion 72 can be stably fixed, the leg portion 72 can be fixed even at the same height as the crown portion 61 or at a bottom surface or a pedestal surface at a higher position.

Further, the roof supporting mechanisms 7, 7a, 7b need not be provided with a rod-shaped leg portion 72 extending in the vertical direction. For example, even if the cross frame portion (such as the horizontal bar portion 71 and the inclined portion 711 or the curved frame portion formed by the curved arch bridge shown in FIG. 1) is directly fixed to the upper surface of the metal frame 11 or the like, the lower end portion is also fixed. can. At this time, the base end portions of the arch bridges become the leg portions.

Others, various changes can be made even for the configuration of the metal window 3. For example, even if a flow path through which the fluid for temperature adjustment flows is provided in the metal window 3, the temperature of the metal window 3 may be adjusted. At this time, the metal window hanging portion 62 may be provided with a flow path through which the fluid for temperature adjustment is circulated.

Further, the roof portion 61 is not limited to the case of being formed of one sheet material, and may be divided into a plurality of sheets. Even if the plurality of slab portions 61 are suspended and supported by the common slab support mechanism 7, even if borrowed It is also possible to support the respective ceiling portions 61 by a plurality of different roof supporting mechanisms 7 that are different from each other.

Further, the ceiling portion 61 is formed of one piece of aluminum having a higher electrical conductivity than iron, and thus it is easy to remove the grounded portion 61 from the ground.

Further, although the FPD substrate is used as an example of the substrate to be processed, in the case of a rectangular substrate, plasma treatment for other types of substrates such as a substrate for a solar cell panel can be applied.

G‧‧‧glass substrate

1‧‧‧Plastic processing unit

10‧‧‧ container body

100‧‧‧Processing space

101‧‧‧ Move in and out

102‧‧‧ gate valve

103‧‧‧Exhaust port

11‧‧‧Metal frame

110‧‧‧ Sealing members

12‧‧‧ Vacuum Exhaust Department

13‧‧‧ mounting table

14‧‧‧Insulator frame

151‧‧‧matcher

152‧‧‧2nd high frequency power supply

3‧‧‧Metal windows

30‧‧‧Some windows

31‧‧‧Insulating components

301‧‧‧Processing gas diffusion chamber

302‧‧‧Processing gas discharge hole

41‧‧‧ gas supply pipe

42‧‧‧Process Gas Supply Department

5‧‧‧High frequency antenna

50‧‧‧Antenna room

511‧‧‧ Matching Department

512‧‧‧1st high frequency power supply

61‧‧‧Surface Department

62‧‧‧Metal window suspension

7‧‧‧Sky support mechanism

71‧‧‧ horizontal bar

710‧‧‧ openings

711‧‧‧ inclined section

712‧‧‧Linking Department

72‧‧‧Foot section

720‧‧‧Flange

73‧‧‧Aisan suspension

73a‧‧‧Cylinder components

73b‧‧‧ rib members

8‧‧‧Control Department

Claims (8)

A plasma processing apparatus for performing plasma treatment by a plasma-treated processing gas on a substrate to be processed in a vacuum evacuated processing space, the plasma processing apparatus comprising: metal The processing container includes a mounting table on which the substrate to be processed is placed, is open to the upper surface of the mounting table, and is electrically grounded; and the conductive metal window is disposed at a position blocking the opening of the processing container The processing space is formed in the upper portion, and is provided in a state of being insulated from the processing container via an insulating member; and the plasma antenna is disposed on the upper side of the metal window so as to face the metal window. The processing gas is plasma-pulled by inductive coupling; the metal window supporting mechanism includes a ceiling portion disposed on the upper side of the plasma antenna so as to face the metal window, and is disposed on the sky plate portion a plurality of first suspension portions for suspending and supporting the metal window; and a slab support structure of the slab structure, which is provided with a utility for suspending and supporting the slab portion from the upper side a cross frame portion of the plurality of second suspension portions and a leg portion for supporting the horizontal frame portion. The plasma processing apparatus according to claim 1, wherein the metal window is divided into a plurality of partial windows, and adjacent partial windows are insulated from each other via an insulating member. The plasma processing apparatus according to claim 2, wherein the insulating member that insulates the processing container and the metal window, and the insulating member that insulates the adjacent partial windows of the metal window are supported by the processing container support. The plasma processing apparatus according to any one of claims 1 to 3, wherein the leg portion is provided on a processing container around the opening. The plasma processing apparatus according to any one of claims 1 to 4, wherein the ceiling portion is made of a metal that is electrically grounded, and the first suspension portion is insulated from the metal window and the ceiling portion. member. The plasma processing apparatus according to claim 5, wherein the cross frame portion and the leg portion of the roof supporting mechanism are made of metal having low conductivity and high mechanical strength compared to the top plate portion. The plasma processing apparatus according to any one of claims 1 to 6, wherein the lateral frame portion is formed in an arch shape. The plasma processing apparatus according to any one of claims 1 to 7, wherein the metal window also serves as a gas shower head for supplying a processing gas to the processing space.