CN105826155A - Plasma processing apparatus - Google Patents
Plasma processing apparatus Download PDFInfo
- Publication number
- CN105826155A CN105826155A CN201610055894.3A CN201610055894A CN105826155A CN 105826155 A CN105826155 A CN 105826155A CN 201610055894 A CN201610055894 A CN 201610055894A CN 105826155 A CN105826155 A CN 105826155A
- Authority
- CN
- China
- Prior art keywords
- processing apparatus
- metal window
- window
- plasma processing
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention provides a plasma processing apparatus which is provided with a metal window using a lightweight mechanism and maintains the mechanical strength. In the plasma processing apparatus (1) which performs plasma processing on a processed substrate (G) in a processing space (100) where vacuum exhaust is carried out, a metal process container (10) has a mounting table of the processed substrate (G). The conductive metal window (3) spacing an insulation part (31) is arranged at the position of an opening which is sealed and formed on the upper surface. The metal window (3) is configured to be hung and supported by a top plate part (61) above a plasma antenna (5) for generating the plasma. And the top plate part (61) is hung and supported by a top plate supporting mechanism (7) of a skeleton structure with a crossarm part (71, 711) and a foot column part (72).
Description
Technical field
The present invention relates to the use of the plasma processing apparatus that plasmarized place's process gases carries out the Cement Composite Treated by Plasma of processed substrate.
Background technology
In the manufacturing process of the flat faced displays (FPD) such as liquid crystal indicator (LCD), there is the operation that the place's process gases having supplied plasmarized to the glass substrate as processed substrate is etched the Cement Composite Treated by Plasma of process and film forming process etc..These Cement Composite Treated by Plasma use the various plasma processing apparatus such as plasma-etching apparatus and plasma CVD equipment.In recent years, as the method that will process gaseous plasma, have and can receive publicity with the inductively coupled plasma (InductivelyCoupledPlasma:ICP) of the condition of high vacuum degree acquisition such main advantages of highdensity plasma.
On the other hand, the size of glass substrate is progressively maximizing.Shape glass substrate for such as LCD, it is desirable to be able to the length on process minor face × long limit is about the plasma processing apparatus of the size of 2200mm × about 2400mm, the most about 2800mm × about 3000mm.
With the maximization of plasma processing apparatus, the upper side being configured at glass substrate and the dielectric window being oppositely disposed with the plasma antenna making above-mentioned inductively coupled plasma produce also maximize.But, the dielectric substance mechanical strength such as quartz constituting dielectric window is little and crisp, thus is not suitable for maximizing.Therefore, patent documentation 1 has been recorded there is the plasma processing apparatus of the metal metal window higher than quartzy rigidity.
Here, in order to make inductively coupled plasma produce across metal window, need, when the metal process container with the main body constituting plasma processing apparatus insulate, metal window is installed.Additionally, to becoming vacuum atmosphere and process the above-mentioned metal window in space, not only apply himself weight and also apply atmospheric pressure, it is therefore necessary to bearing metal window so that it is these power can be born.Thus, with the maximization of metal window, exist this metal window is installed on the mechanism of process container also maximize, the most re-quantization problem.
Here, a kind of laser anneal device has been recorded in patent documentation 2, it strengthens the rib part of its mechanical strength at the upper cap parts processing chamber of the modification that glass substrate is irradiated laser by arranging, it is suppressed that make the generation tilting or bending of the window component of laser light.Additionally, the outside wall surface having recorded the chamber portion of the vacuum treatment installation in the process carrying out FPD glass substrate in patent documentation 3 arranges reinforcing member that include rib part and the tabular joint elements that engage with rib part, that can be dismantled relative to above-mentioned outside wall surface by bolt.
But, these patent documentations 2,3 arrange the method for large-scale metal window while being all not disclosed in maintaining the state insulated with process container.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2012-227427 publication: paragraph 0018, Fig. 1
Patent documentation 2: No. 3451478 publications of Japanese Patent Publication No.: paragraph 0002,0018, Fig. 1,2
Patent documentation 3: No. 5232801 publications of Japanese Patent Publication No.: paragraph 0028～0029, Fig. 3
Summary of the invention
Invention is wanted to solve the technical problem that
The present invention completes in this case, its object is to provide a kind of plasma processing apparatus utilizing the mechanism of light weight to be provided with metal window while holding mechanical strength.
Solve the technical scheme of technical problem
The plasma processing apparatus of the present invention is to the plasma processing apparatus having carried out the Cement Composite Treated by Plasma that place's process gases that the processed substrate that vacuum exhaust processes in space performs to have utilized plasmarized is carried out, above-mentioned plasma processing apparatus is characterised by, including:
There is the metal process container of the mounting table for loading above-mentioned processed substrate, the upper surface open relative with this mounting table and electrical ground；
It is configured at the position of the opening closing above-mentioned process container and forms above-mentioned process space, and the metal window of the electric conductivity arranged with the state across insulating element with the insulation of above-mentioned process container；
Upper side at above-mentioned metal window is arranged in the way of relative with this metal window, is used for the plasma antenna of above-mentioned process gaseous plasma by inductive；
Metal window supporting device, comprising: be configured at the top plate portion of the upper side of plasma antenna and be arranged at multiple first suspension parts for the above-mentioned metal window of hanger bearing of this top plate portion in the way of relative with above-mentioned metal window；With
The roof plate supporting mechanism of framing structure, comprising: be provided with for from the crossbearer portion of multiple second suspension parts of the above-mentioned top plate portion of upper side hanger bearing with for supporting the socle portion in above-mentioned crossbearer portion.
Above-mentioned plasma processing apparatus can also have following structure.
A () above-mentioned metal window is divided into some windows, adjacent part window is each other across insulating element mutually insulated.By above-mentioned process container and the insulating element of metal window insulation and insulating element insulated from each other for the adjacent part window of this metal window is supported by above-mentioned process container.
On the process container of b surrounding that () above-mentioned socle portion is arranged on above-mentioned opening.
C metal parts that () above-mentioned top plate portion is electrically grounded, above-mentioned first suspension part has the insulating element of above-mentioned metal window with top plate portion insulation.The crossbearer portion of above-mentioned roof plate supporting mechanism and the metal parts that socle portion is that electric conductivity is low compared with above-mentioned top plate portion, mechanical strength is high.
D () above-mentioned crossbearer portion is formed as arcuate in shape.
E () above-mentioned metal window doubles as the gas tip of process gases at above-mentioned process space supply.
Invention effect
Composition is processed the metal window hanger bearing in space in top plate portion by the present invention, further with roof plate supporting mechanism this top plate portion of hanger bearing of framing structure, therefore, it is possible to the load that will apply from metal window, while guaranteeing metal window is installed on mechanical strength necessary to process container, it is possible to make mechanism's lightweight of this metal window of supporting.
Accompanying drawing explanation
Fig. 1 is that the vertical of plasma processing apparatus that embodiment relates to cuts side view.
Fig. 2 is a part of fragmented top plan view of above-mentioned plasma processing apparatus.
Fig. 3 is that the vertical of installment state representing the metal window being arranged at above-mentioned plasma processing apparatus cuts side view.
Fig. 4 is that the vertical of plasma processing apparatus that comparative example relates to cuts side view.
Fig. 5 is a part of fragmented top plan view of the variation of the roof plate supporting mechanism representing and being arranged at plasma processing apparatus.
Fig. 6 is that the vertical of another variation representing above-mentioned roof plate supporting mechanism cuts side view.
Fig. 7 is that the vertical of another variation representing above-mentioned roof plate supporting mechanism cuts side view.
Description of reference numerals
G glass substrate
1,1a～1c plasma processing apparatus
10 container bodies
100 process space
11 metal frames
13 mounting tables
3 metal windows
30 part windows
31 insulating elements
5 high frequency antennas
61,61a top plate portion
62 metal window suspension parts
7,7a～7c roof plate supporting mechanism
71 cross bar portions
711 rakes
72 socle portions
721 roof plate supporting portions
73 top board suspension parts
8 control portions
Detailed description of the invention
Hereinafter, with reference to Fig. 1～Fig. 3, the structure of the plasma processing apparatus 1 that embodiments of the present invention relate to is described.
Plasma processing apparatus 1 can be used in various Cement Composite Treated by Plasma, these various Cement Composite Treated by Plasma be included on the substrate G of the such as FPD of the rectangular substrate as processed substrate when forming thin film transistor (TFT) for forming the film forming of metal film, ito film, oxide-film etc. and processing, etch processes that these films are etched and the ashing process etc. of resist film.Here, as FPD, the examples such as liquid crystal display (LCD), electroluminescent (ElectroLuminescence:EL) display, plasm display panel (PDP) can be shown.Additionally, plasma processing apparatus 1 is not limited to be used in the above-mentioned various Cement Composite Treated by Plasma that the substrate G to FPD is carried out, it is possible to use in the above-mentioned various Cement Composite Treated by Plasma that the substrate G of solar battery panel is carried out.
Vertical such as Fig. 1 cuts shown in side view, and plasma processing apparatus 1 has the container body 10 of the square tube shape that the aluminum after being anodized is constituted by conductive material, such as internal face, this container body 10 electrical ground.Upper surface at container body 10 is formed with opening, and this opening is closed airtightly by the metal window 3 with the rectangular shape of this insulated setting of container body 10.The space surrounded by container body 10 and metal window 3 becomes the process space 100 of substrate G, and the space of the upper side of metal window 3 becomes the antenna chamber 50 of configuring high-frequency antenna (plasma antenna) 5.Additionally, be provided with for by the carrying-in/carrying-out mouth 101 of glass substrate (hereinafter referred to as substrate) G carrying-in/carrying-out with for making the gate valve 102 of carrying-in/carrying-out mouth 101 opening and closing at the sidewall processing space 100.
In the way of relative with above-mentioned metal window 3, the mounting table 13 for loading substrate G it is provided with in the lower side processing space 100.Aluminum after mounting table 13 is anodized by conductive material, such as surface is constituted.The substrate G being placed in mounting table 13 is kept by not shown electrostatic chuck absorption.Mounting table 13 is incorporated in insulator frame 14, is arranged on the bottom surface of container body 10 across this insulator frame 14.
Mounting table 13 is connected with the second high frequency electric source 152 by adapter 151.RF power, such as frequency that mounting table 13 is biased by the second high frequency electric source 152 are the RF power of 3.2MHz.Utilize automatic bias produced by the RF power of this bias, it is possible to the ion in the plasma produced in processing space 100 is attracted to substrate G.
Additionally, in order to control the temperature of substrate G, be provided with in mounting table 13 be made up of the heating units such as ceramic heater and refrigerant flow path temperature control device, temperature sensor, for the gas flow path (the most not shown) of He gas to the back side of substrate G supply heat transfer.
Additionally, be formed with air vent 103 in the bottom surface of container body 10, this air vent 103 is connected with the vacuum exhaust portion 12 comprising vacuum pump etc..Process space 100 inside by this vacuum exhaust portion 12 vacuum exhaust to pressure during Cement Composite Treated by Plasma.
Metal window 3 for example, nonmagnetic material, is made up of the metal of electric conductivity, aluminum or the alloy etc. containing aluminum.Additionally, for the plasma-resistance improving metal window 3, dielectric film, dielectric cap can be arranged in the face processing side, space 100 of metal window 3.As dielectric film, it is possible to enumerate anode oxide film or thermal spraying ceramic film.Additionally, as dielectric cap, it is possible to enumerate quartz system or the dielectric cap of ceramic.
As shown in Figure 1 and Figure 2, the upper surface side at the sidewall of container body 10 is provided with the metal frame 11 of the framework as rectangular shape being made up of metals such as aluminum.Between container body 10 and metal frame 11, it is provided with the seal member 110 for keeping processing space 100 airtightly.Here, container body 10 and metal frame 11 constitute the process container of present embodiment.
Further, the metal window 3 of this example is divided into some windows 30, and these part windows 30 are configured at the inner side of metal frame 11, is monolithically fabricated the metal window 3 of rectangular shape.Mutual divided part window 30 because of insulating element 31 with metal frame 11 and container body 10 electric insulation of side below, and the adjacent part window 30 the most also mutually insulated because of insulating element 31.
Insulating element 31 is such as supported by metal frame 11.On the other hand, each several part window 30 insulated with metal frame 11 and adjacent part window 30 because of insulating element 31, it is provided separately with insulating element 31, by from top plate portion 61 hanger bearing.Mechanism for hanger bearing metal window 3 (part window 30) will describe the most in detail.
It addition, the segmented shape of part window 30 is not limited to rectangular shape.Additionally, for reinforced insulation parts 31, it is also possible to it is configured to: beams of metal is set in the way of being split by the inner surface of metal frame 11 in terms of upper surface side, utilizes this metal frame to support insulating element 31.
Further, the part window 30 of this example doubles as locating the shower nozzle of process gases supply.As shown in Figure 1, Figure 3, the process gas diffusion chamber 301 of place process gases diffusion is made being internally formed of each several part window 30.Additionally, the lower surface at each several part window 30 is formed for from processing gas diffusion chamber 301 to processing multiple places process gases squit hole 302 of process gases at the supply of space 100.And, as it is shown in figure 1, the process gas diffusion chamber 301 of each several part window 30 is connected with processing gas supply part 42 by gas supply pipe 41.From processing process gases from gas supply part 42 supplies required for above-mentioned film forming processs, etch processes, ashing process etc..It addition, for the ease of diagram, connect and have the state processing gas supply part 42 shown in Fig. 1 on 1 part window 30, but it practice, the process gas diffusion chamber 301 of each several part window 30 is all connected with process gas supply part 42.
Further, in the inside of antenna chamber 50 to be configured with high frequency antenna 5 in the way of part window 30.High frequency antenna 5 such as configures with part window 30 discretely across the sept being made up of not shown insulating element.Such as high frequency antenna 5 is by being formed as helical form in the face corresponding with each several part window 30 in the way of the circumferential direction cincture of the metal window 3 of rectangular shape.It addition, the shape of high frequency antenna 5 is not limited to helical form, can be to make one or more dwi hastasana become ring-type coil antenna.And, it is also possible to use with offset angular while winding many strip antennas and entirety becomes the multiple antenna that spiral helicine mode is arranged.Like this, as long as with metal window 3 or constitute metal window 3 face corresponding to each several part window 30 in, to be provided with antenna in the way of its circumferential direction cincture, the most no matter the structure of high frequency antenna 5 is how.
Each high frequency antenna 5 is connected with the first high frequency electric source 512 by adapter 511.Via adapter 511, each high frequency antenna 5 is supplied the RF power of such as 13.56MHz from the first high frequency electric source 512.Thus, during Cement Composite Treated by Plasma, the respective surface of part window 30 induce eddy current, because of this eddy current process space 100 be internally formed induction field.At gas squit hole 302 ejection, process gases is in plasma in the inside processing space 100 because of induction field.
Further, as it is shown in figure 1, be provided with control portion 8 at this plasma processing apparatus 1.Control portion 8 is made up of the computer including not shown CPU (CentralProcessingUnit) and storage part, this storage part records to have and is incorporated into the program that step (order) is organized, this step (order) group is for performing the signal of following actions: by being configured with vacuum exhaust in the process space 100 of substrate G, use the action that substrate G is processed by high frequency antenna 5 by processing gaseous plasma.This program is such as stored in the storage mediums such as hard disk, CD, magneto-optic disk, storage card, is installed to storage part from these media.
In the plasma processing apparatus 1 with structure described above, the mechanism of bearing metal window 3 is required to bear the deadweight of metal window 3 plus the ability to the atmospheric pressure that metal window 3 applies.But, insulating element 31 mechanical strength of the surrounding being such as configured at each several part window 30 is little and crisp, and the mechanism being therefore not suitable as supporting the parts being applied in the biggest power uses.On the other hand, reinforced insulation parts 31 are carried out if, with beams of metal etc., make it possible to use insulating element 31 supporting part window 30, then the formation not only for plasma does not has the area of helpful beams of metal to increase, and can weaken for forming the induction field of plasma yet.
Supporting device as metal window 3, can consider such as shown in the plasma processing apparatus 1a of Fig. 4, side of sidewall portion 63 is utilized to surround antenna chamber 50 around, the top plate portion 61a of face side configuration thereon makes metal window 3 the most opposed with top plate portion 61a, by metal window suspension part 62 by top plate portion 61a by the mechanism of each several part window 30 hanger bearing.Here, top plate portion 61a uses the aluminum etc. that electric conductivity is high.Then, Intensity Design is carried out on the premise of constituting supporting device by the top plate portion 61a of aluminum, as mentioned above in the plasma processing apparatus 1a processing the substrate G of size of about 2200mm × about 2400mm, in order to support the load applied from metal window 3 side, the thickness of top plate portion 61a is more than 10cm.Known in order to support so thick top plate portion 61a, the gauge of side of sidewall portion 63 also increases, and the supporting device of metal window 3 maximizes, the most re-quantization.
In order to solve the problems referred to above, the plasma processing apparatus 1 of present embodiment is configured to: as shown in Figure 1, while maintenance utilizes top plate portion 61 by the mode of metal window 3 hanger bearing, it is provided with the roof plate supporting mechanism 7 strengthening the also framing structure in top support plate portion 61.By utilizing roof plate supporting mechanism 7 to strengthen top plate portion 61, the thickness of top plate portion 61 is reduced to below 10cm, further by making roof plate supporting mechanism 7 for framing structure, omits the setting of the side of sidewall portion 63 shown in plasma processing apparatus 1a of Fig. 4.
Hereinafter, in detail the structure of the supporting device of metal window 3 is illustrated.
As it is shown in figure 1, such as top plate portion 61 is made up of the aluminium panels that size is roughly the same with metal window 3, configure in the way of making its lower surface relative with metal window 3 across antenna chamber 50.As it is shown in figure 1, this top plate portion 61 electrical ground.Additionally, be provided with the multiple metal window suspension parts 62 as the first suspension part between the lower surface and the upper surface of part window 30 of top plate portion 61, metal window 3 (part window 30) is by these metal window suspension part 62 hanger bearings.It addition, part window 30 and metal window suspension part 62 electric insulation here so that become the state electrically floating relative to this metal window suspension part 62.These top plate portions 61 and metal window suspension part 62 are equivalent to the metal window supporting device of present embodiment.
Such as it is shown on figure 3, metal window suspension part 62 is upper end is formed with the metal rod-like members of flange part 621.The flange part 621 of this metal window suspension part 62 is anchored on the lower surface of top plate portion 61 by bolt 622.
In addition it is also possible to by the border that each metal window suspension part 62 is configured at adjacent part window 30, by 2 part windows 30 of 1 metal window suspension part 62 hanger bearing, that suppresses metal window suspension part 62 arranges several increases.And, it is also possible to the above-mentioned gas supply pipe 41 of process gases at process gas diffusion chamber 301 supply to part window 30 is formed in this metal window suspension part 62.
As illustrate with the plasma processing apparatus 1a of Fig. 4, if supporting whole face merely with top plate portion 61a to be applied in the metal window 3 of stronger tensile load, then can only use thicker sheet material, the supporting device of metal window 3 is the most re-quantization.Therefore, in the plasma processing apparatus 1 of this example, use the structure of the further hanger bearing top plate portion 61 of roof plate supporting mechanism 7 utilizing framing structure.
As it is shown in figure 1, roof plate supporting mechanism 7 becomes the many cross bar portions 71 of the upper surface side including being erected at top plate portion 61 and supports the framing structure in socle portion 72 in each cross bar portion 71.The most each socle portion 72 is the rod-like members configured in the way of stretching out upward, for iron higher than aluminum of mechanical strength (bending strength, hot strength).Each socle portion 72 is fastened on the upper surface side of metal frame 11 by being formed at the flange part 720 of its bottom.
The upper end in socle portion 72 is connected with the shaft-like cross bar portion 71 extended in the transverse direction by the rake 711 bent obliquely to the inner side of container body 10 in terms of upper surface side.The rake 711 at these cross bar portions 71 and its two ends is also made up of parts made of iron.Additionally, by being formed arch (arch) structure being made up of a plurality of straight line by cross bar portion 71 and rake 711, make the intensity of roof plate supporting mechanism 7 improve.Cross bar portion 71 and rake 711 are equivalent to the crossbearer portion of present embodiment.It addition, this crossbearer portion can certainly be made up of curvilinear arch.
As shown in Figure 2, the central part of the upper side of four angular top plate portions 61 of each cross bar portion 71 central part from each limit of metal frame 11 (sidewall of container body 10) and metal frame 11 stretches out, interconnected by the linking part 712 being made up of the framework of metal rectangular shape.The opening 710 of linking part 712, in addition to making to go to the supply lines of high frequency antenna 5 and gas supply pipe 41 passes through, at the upper surface of linking part 712, also configures that not shown allotter and the adapter 511 etc. that each high frequency antenna 5 distributes electrode.
Lower surface in cross bar portion 71 and rake 711 is provided with the multiple top board suspension parts 73 as the second suspension part, by these top board suspension part 73 hanger bearing top plate portions 61.It addition, in this example, it is provided with shaft-like post parts 73a that the lower surface from cross bar portion 71 stretches out to the lower side and these the 2 kinds of top board suspension parts 73 of rib part 73b of the tabular that the lower surface from rake 711 stretches out to the lower side.
As it is shown on figure 3, post parts 73a is the rod-like members made of iron being provided with flange part 731 in upper and lower end, the flange part 731 of side, upper end is fastened on the lower surface in cross bar portion 71 by bolt 732.Additionally, the flange part 731 of the side, bottom of post parts 73a is fastened on the upper surface of top plate portion 61 by bolt 732.Rib part 73b is anchored on lower surface and the upper surface of top plate portion 61 of rake 711 also by flange part etc., and this point is identical, omits diagram.It addition, post parts 73a, 73b can also be configured to be integrally forming with cross bar portion 71 and rake 711 by welding etc..
By structure described above, the top plate portion 61 of hanger bearing metal window 3 (part window 30) is further by roof plate supporting mechanism 7 (cross bar portion 71, rake 711, socle portion 72) hanger bearing.
The effect of the plasma processing apparatus 1 related to above-mentioned embodiment below illustrates.
First, open gate valve 102, utilize transport mechanism (the most not shown) to be moved in process space 100 by substrate G through carrying-in/carrying-out mouth 101 from adjacent vacuum carrying room.Then, mounting table 13 loads substrate G, is fixed by not shown electrostatic chuck, on the other hand, make above-mentioned transport mechanism exit from processing space 100, closing gate valve 102.
Hereafter, from processing the gas supply part 42 process gas diffusion chamber 301 through each several part window 30 process gases at supply in process space 100, on the other hand, utilize vacuum exhaust portion 12 will process vacuum exhaust in space 100, in space 100 being processed, be adjusted to the pressure atmosphere of such as 0.66～about 26.6Pa.Additionally, from not shown gas flow path to the He gas of substrate G supply heat transfer.
Then, apply RF power from the first high frequency electric source 512 to high frequency antenna 5, in processing space 100, produce uniform induction field from there through metal window 3.As a result of which it is, by induction field, process gaseous plasma in processing space 100, produce highdensity inductively coupled plasma.And, by the bias RF power applied to mounting table 13 from the second high frequency electric source 152, the ion in plasma is attracted to substrate G, carries out the Cement Composite Treated by Plasma of substrate G.
Then, after carrying out the Cement Composite Treated by Plasma time set in advance.Stop the power supply from each high frequency electric source 512,152, the vacuum exhaust supplying from the place's process gases processing gas supply part 42 and processing in space 100, take out of substrate G according to the order contrary with when moving into.
The inside processing space 100 having carried out above action specification is the state of fine vacuum by vacuum exhaust described above, and the metal window 3 (part window 30) of the upper surface side configuration processing space 100 is also applied in atmospheric pressure in addition to it is conducted oneself with dignity.Metal window 3 resists these power, by top plate portion 61 hanger bearing, is maintained at and is formed with the state processing space 100 between container body 10.
Here, roof plate supporting mechanism 7 hanger bearing of the framing structure that the top plate portion 61 of hanger bearing metal window 3 is also constituted by the parts that the strength ratio top plate portion 61 by mechanical strength is high and be enhanced.On the other hand, the socle portion 72 of roof plate supporting mechanism 7 is arranged on the upper surface side of metal frame 11, therefore the hanging load of metal window 3 is dispersed in its socle portion 72 by roof plate supporting mechanism 7, is converted to press the power of metal frame 11 (i.e. the sidewall of container body 10).Have the container body 10 of the pressure performance for processing the vacuum atmosphere in space 100 have can resist above-mentioned by pressure the sufficient intensity of stably top support plate supporting device 7.
Plasma processing apparatus 1 according to the present invention, it is possible to obtain following effect.The metal window 3 processing space 100 it is made up of top plate portion 61 hanger bearing, further with the roof plate supporting mechanism 7 hanger bearing top plate portion 61 of the framing structure being made up of the parts that mechanical strength is high, therefore, it is possible to the hanging load of dispersed metal window 3.
Its result is, compared with the situation of the top plate portion 61a utilizing aluminum shown in the plasma processing apparatus 1a of Fig. 4 and the side of sidewall portion 63 hanger bearing metal window 3 being arranged on its circumference, mechanism's lightweight of this metal window 3 of supporting can be made while keeping mechanical strength necessary to metal window 3 is installed.
During it addition, compare with the side of sidewall portion 63 of Fig. 4, " framing structure " of the roof plate supporting mechanism 7 of the present invention refers to, the situation that the parts of minor face and long limit that roof plate supporting mechanism 7 is shorter than metal frame 11 (sidewall of container body 10) respectively by width are constituted.The parts of such as framing structure use the parts of the width of several cm～about tens cm.
Here, the structure of roof plate supporting mechanism 7 is not limited to the example using Fig. 1～Fig. 3 to represent, it is possible to use various deformation.
Such as, in each figure of Fig. 5～Fig. 7 of following description, for the structural element identical with the structural element shown in Fig. 1～Fig. 3, mark the labelling identical with the labelling of mark in these figures.
The plan view shape of roof plate supporting mechanism 7 is not limited to be configured to the situation that the central part side of each cross bar portion 71 container body 10 extends radially as shown in Figure 2.Such as can also be as it is shown in figure 5, be configured to configure many cross bar portions 71 in parallel to each other along the short side direction of container body 10.
Additionally, the situation being not limited to only be supported its whole face by hanger bearing in top support plate portion 61.Such as can also the roof plate supporting mechanism 7a of plasma processing apparatus 1b as shown in Figure 6 such, by being arranged on the roof plate supporting portion 721 of side in socle portion 72 circumference from lower face side top support plate portion 61.
Further, roof plate supporting mechanism 7 nor is it necessary that the upper surface (on the sidewall of container body 10) being arranged on metal frame 11.Such as can also the roof plate supporting mechanism 7b of plasma processing apparatus 1c as shown in Figure 7 such, socle portion 72 is arranged on ground and the seat surface etc. of configuration plasma processing apparatus 1c.Here, the fixing ground in socle portion 72 or the height and position of seat surface can be not necessarily located in the lower side of top plate portion 61.As long as socle portion 72 can stably be fixed, then socle portion 72 can also be held within height identical with top plate portion 61 or the ground of the position higher than this top plate portion 61 or seat surface.
And, roof plate supporting mechanism 7,7a, 7b are not necessary to arrange the upwardly extending shaft-like socle portion 72 of upper and lower.The bottom in the crossbearer portion of arcuate in shape (the crossbearer portion that cross bar portion 71 as shown in Figure 1 and rake 711 or curvilinear arch are constituted) such as can also be directly anchored to the upper surface of metal frame 11 etc..In the case, the base end part of these arches becomes socle portion.
Additionally, about the structure of metal window 3, various deformation can be enumerated.Such as being configured to arrange the stream of the fluid circulation making temperature adjust at metal window 3, the temperature carrying out metal window 3 adjusts.In this case as well, it is possible to arrange the stream that the fluid making said temperature whole is through-flow in metal window suspension part 62.
And, top plate portion 61 is not limited to situation about being made up of 1 block of sheet material, it is also possible to be divided into multiple sheet material.Both can be by these multiple top plate portions 61 by roof plate supporting mechanism 7 hanger bearing shared, it is also possible to each top plate portion 61 is supported by multiple roof plate supporting mechanisms 7 different from each other.
It addition, by being constituted top plate portion 61 by 1 block of plate of the electric conductivity aluminum higher than ferrum, also have ground connection top plate portion 61 become easy effect except electricity.
Further, as processed substrate, it is shown that use the example of FPD substrate, but if rectangular substrate, then can also apply to the Cement Composite Treated by Plasma of the substrate of other kinds such as substrate for solar battery panel.
Claims (8)
1. a plasma processing apparatus, it is to having carried out the Cement Composite Treated by Plasma that place's process gases that the processed substrate that vacuum exhaust processes in space performs to have utilized plasmarized is carried out, and described plasma processing apparatus is characterised by, including:
Metal process container, it has the mounting table for loading described processed substrate, the upper surface open relative with this mounting table and electrical ground；
The metal window of electric conductivity, it is configured at the position of the opening closing described process container and forms described process space, and arranges with the state across insulating element with the insulation of described process container；
Upper side at described metal window is arranged in the way of relative with this metal window, is used for the plasma antenna of described process gaseous plasma by inductive；
Metal window supporting device, comprising: be configured at the top plate portion of the upper side of plasma antenna and be arranged at multiple first suspension parts for metal window described in hanger bearing of this top plate portion in the way of relative with described metal window；With
The roof plate supporting mechanism of framing structure, comprising: be provided with for from the crossbearer portion of multiple second suspension parts of top plate portion described in upper side hanger bearing with for supporting the socle portion in described crossbearer portion.
2. plasma processing apparatus as claimed in claim 1, it is characterised in that:
Described metal window is divided into some windows, and adjacent part window is each other across insulating element mutually insulated.
3. plasma processing apparatus as claimed in claim 2, it is characterised in that:
By described process container and the insulating element of metal window insulation and insulating element insulated from each other for the adjacent part window of this metal window is supported by described process container.
4. plasma processing apparatus as claimed any one in claims 1 to 3, it is characterised in that:
On the process container of the surrounding that described socle portion is arranged on described opening.
5. the plasma processing apparatus as according to any one of Claims 1-4, it is characterised in that:
The metal parts that described top plate portion is electrically grounded, described first suspension part has the insulating element parts of described metal window with top plate portion insulation.
6. plasma processing apparatus as claimed in claim 5, it is characterised in that:
The crossbearer portion of described roof plate supporting mechanism and the metal parts that socle portion is that electric conductivity is low compared with described top plate portion, mechanical strength is high.
7. the plasma processing apparatus as according to any one of claim 1 to 6, it is characterised in that:
Described crossbearer portion is formed as arcuate in shape.
8. the plasma processing apparatus as according to any one of claim 1 to 7, it is characterised in that:
Described metal window doubles as the gas tip of process gases at described process space supply.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015013424 | 2015-01-27 | ||
| JP2015-013424 | 2015-01-27 | ||
| JP2015-107754 | 2015-05-27 | ||
| JP2015107754A JP6600990B2 (en) | 2015-01-27 | 2015-05-27 | Plasma processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105826155A true CN105826155A (en) | 2016-08-03 |
| CN105826155B CN105826155B (en) | 2018-04-27 |
Family
ID=56558483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610055894.3A Active CN105826155B (en) | 2015-01-27 | 2016-01-27 | Plasma processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6600990B2 (en) |
| KR (1) | KR101867147B1 (en) |
| CN (1) | CN105826155B (en) |
| TW (1) | TWI696208B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107633991A (en) * | 2017-09-20 | 2018-01-26 | 武汉华星光电半导体显示技术有限公司 | A kind of dry etching equipment |
| CN112117176A (en) * | 2019-06-20 | 2020-12-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and plasma processing system including the same |
| WO2022151939A1 (en) * | 2021-01-18 | 2022-07-21 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6719290B2 (en) * | 2016-06-22 | 2020-07-08 | 東京エレクトロン株式会社 | Reinforcement structure, vacuum chamber, and plasma processing equipment |
| JP6804392B2 (en) * | 2017-06-05 | 2020-12-23 | 東京エレクトロン株式会社 | Plasma processing equipment and gas shower head |
| KR102409375B1 (en) * | 2018-11-15 | 2022-06-15 | 주식회사 원익아이피에스 | Substrate processing apparatus |
| JP7303980B2 (en) | 2019-07-09 | 2023-07-06 | 日新電機株式会社 | Plasma processing equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110155057A1 (en) * | 2009-12-25 | 2011-06-30 | Tokyo Electron Limited | Plasma process apparatus |
| CN102132381A (en) * | 2008-08-22 | 2011-07-20 | 应用材料股份有限公司 | Process gas delivery for semiconductor process chamber |
| CN103053011A (en) * | 2010-08-04 | 2013-04-17 | 朗姆研究公司 | Dual plasma volume processing apparatus for neutral/ion flux control |
| CN104299879A (en) * | 2013-07-16 | 2015-01-21 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986618A (en) | 1975-09-05 | 1976-10-19 | Lee C. Moore Corporation | Pipe rack with pivoted fingers and screw conveyors |
| JP4028534B2 (en) * | 1999-05-13 | 2007-12-26 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
| JP3451478B2 (en) | 1999-12-21 | 2003-09-29 | 住友重機械工業株式会社 | Process chamber |
| JP4522980B2 (en) * | 2005-11-15 | 2010-08-11 | パナソニック株式会社 | Plasma processing apparatus and plasma processing method |
| KR101089877B1 (en) * | 2008-04-15 | 2011-12-05 | 도쿄엘렉트론가부시키가이샤 | Vacuum container and plasma processing apparatus |
| JP5479867B2 (en) * | 2009-01-14 | 2014-04-23 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
| JP2011258622A (en) * | 2010-06-07 | 2011-12-22 | Tokyo Electron Ltd | Plasma processing apparatus and its dielectric window structure |
| JP5745812B2 (en) * | 2010-10-27 | 2015-07-08 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5727281B2 (en) * | 2011-04-21 | 2015-06-03 | 東京エレクトロン株式会社 | Inductively coupled plasma processing equipment |
-
2015
- 2015-05-27 JP JP2015107754A patent/JP6600990B2/en active Active
-
2016
- 2016-01-25 TW TW105102233A patent/TWI696208B/en active
- 2016-01-26 KR KR1020160009236A patent/KR101867147B1/en active IP Right Grant
- 2016-01-27 CN CN201610055894.3A patent/CN105826155B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132381A (en) * | 2008-08-22 | 2011-07-20 | 应用材料股份有限公司 | Process gas delivery for semiconductor process chamber |
| US20110155057A1 (en) * | 2009-12-25 | 2011-06-30 | Tokyo Electron Limited | Plasma process apparatus |
| CN103053011A (en) * | 2010-08-04 | 2013-04-17 | 朗姆研究公司 | Dual plasma volume processing apparatus for neutral/ion flux control |
| CN104299879A (en) * | 2013-07-16 | 2015-01-21 | 东京毅力科创株式会社 | Inductively coupled plasma processing apparatus |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107633991A (en) * | 2017-09-20 | 2018-01-26 | 武汉华星光电半导体显示技术有限公司 | A kind of dry etching equipment |
| CN107633991B (en) * | 2017-09-20 | 2019-10-11 | 武汉华星光电半导体显示技术有限公司 | A kind of dry etching equipment |
| CN112117176A (en) * | 2019-06-20 | 2020-12-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and plasma processing system including the same |
| CN112117176B (en) * | 2019-06-20 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and plasma processing system |
| WO2022151939A1 (en) * | 2021-01-18 | 2022-07-21 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI696208B (en) | 2020-06-11 |
| CN105826155B (en) | 2018-04-27 |
| JP6600990B2 (en) | 2019-11-06 |
| TW201633363A (en) | 2016-09-16 |
| KR20160092504A (en) | 2016-08-04 |
| JP2016139592A (en) | 2016-08-04 |
| KR101867147B1 (en) | 2018-06-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105826155A (en) | Plasma processing apparatus | |
| US20230268160A1 (en) | Antenna unit for inductively coupled plasma, inductively coupled plasma processing apparatus and method therefor | |
| CN102177769B (en) | The RF return path of large plasma processing chamber | |
| US8709162B2 (en) | Active cooling substrate support | |
| CN1826679B (en) | RF current return path for a large area substrate plasma reactor | |
| CN102751157B (en) | Inductance coupling plasma processing device | |
| CN104299879A (en) | Inductively coupled plasma processing apparatus | |
| CN106373850B (en) | Plasma processing apparatus | |
| CN102915944B (en) | Substrate connecting method | |
| CN102308675A (en) | Ground return for plasma processes | |
| CN101562126B (en) | Vacuum container and plasma processing apparatus | |
| CN102821534B (en) | Inductively coupled plasma antenna element and device for inductively coupled plasma processing | |
| CN102280338A (en) | plasma processing device and dielectric window structure thereof | |
| TWI547214B (en) | Antenna unit and inductively coupled plasma processing device | |
| CN102751156B (en) | Inductance coupling plasma processing device | |
| CN104282520A (en) | Plasma processing apparatus and plasma distribution adjustment method | |
| KR100904038B1 (en) | Chemical Vapor Deposition Apparatus for Flat Display | |
| CN103037612A (en) | Antenna unit for inductively coupled plasma and inductively coupled plasma processing apparatus | |
| JP4028534B2 (en) | Inductively coupled plasma processing equipment | |
| US9243328B2 (en) | Susceptor with roll-formed surface and method for making same | |
| CN103811262B (en) | Inductance coupling plasma processing device | |
| KR20120077375A (en) | Vacuum chamber for apparatus manufacturing of fpd and method for manufacturing of that | |
| TWI816808B (en) | Wiring fixation structure and processing device | |
| KR101798384B1 (en) | RF antenna structure for inductively coupled plasma processing apparatus | |
| US11817291B2 (en) | Faraday shield and apparatus for treating substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |