TW198131B - - Google Patents

Info

Publication number
TW198131B
TW198131B TW081102826A TW81102826A TW198131B TW 198131 B TW198131 B TW 198131B TW 081102826 A TW081102826 A TW 081102826A TW 81102826 A TW81102826 A TW 81102826A TW 198131 B TW198131 B TW 198131B
Authority
TW
Taiwan
Application number
TW081102826A
Other languages
Chinese (zh)
Original Assignee
American Telephone And Telgraph Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone And Telgraph Company filed Critical American Telephone And Telgraph Company
Application granted granted Critical
Publication of TW198131B publication Critical patent/TW198131B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435Cross-sectional shapes or dispositions of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B10/00Static random access memory [SRAM] devices
    • H10B10/15Static random access memory [SRAM] devices comprising a resistor load element
TW081102826A 1991-05-16 1992-04-11 TW198131B (ref)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/701,270 US5128738A (en) 1991-05-16 1991-05-16 Integrated circuit

Publications (1)

Publication Number Publication Date
TW198131B true TW198131B (ref) 1993-01-11

Family

ID=24816679

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081102826A TW198131B (ref) 1991-05-16 1992-04-11

Country Status (7)

Country Link
US (1) US5128738A (ref)
EP (1) EP0514095B1 (ref)
JP (1) JP2662144B2 (ref)
KR (1) KR100257953B1 (ref)
DE (1) DE69222973T2 (ref)
ES (1) ES2109311T3 (ref)
TW (1) TW198131B (ref)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5213990A (en) * 1992-04-01 1993-05-25 Texas Instruments, Incorporated Method for forming a stacked semiconductor structure
JPH05283654A (ja) * 1992-04-03 1993-10-29 Toshiba Corp マスクromとその製造方法
US5721445A (en) * 1995-03-02 1998-02-24 Lucent Technologies Inc. Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity
US5631112A (en) * 1995-11-16 1997-05-20 Vanguard International Semiconductor Corporation Multiple exposure method for photo-exposing photosensitive layers upon high step height topography substrate layers
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736844A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Semiconductor device
JPS59201461A (ja) * 1983-04-28 1984-11-15 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS59231851A (ja) * 1983-06-14 1984-12-26 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリセル
JPH0628302B2 (ja) * 1984-02-28 1994-04-13 富士通株式会社 半導体記憶装置
JPS63126270A (ja) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp 半導体記憶装置
JPH0831533B2 (ja) * 1988-10-21 1996-03-27 セイコーエプソン株式会社 半導体記憶装置
WO1989011162A1 (fr) * 1988-05-07 1989-11-16 Seiko Epson Corporation Dispositif a semi-conducteurs et memoire a semi-conducteurs
JPH0735399Y2 (ja) * 1989-05-12 1995-08-09 ソニー株式会社 半導体メモリ

Also Published As

Publication number Publication date
KR920022535A (ko) 1992-12-19
DE69222973T2 (de) 1998-03-05
JP2662144B2 (ja) 1997-10-08
US5128738A (en) 1992-07-07
EP0514095B1 (en) 1997-11-05
DE69222973D1 (de) 1997-12-11
ES2109311T3 (es) 1998-01-16
JPH05160369A (ja) 1993-06-25
EP0514095A2 (en) 1992-11-19
KR100257953B1 (ko) 2000-06-01
EP0514095A3 (en) 1992-12-30

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