ES2109311T3 - Circuito integrado que utiliza celulas sram. - Google Patents

Circuito integrado que utiliza celulas sram.

Info

Publication number
ES2109311T3
ES2109311T3 ES92304178T ES92304178T ES2109311T3 ES 2109311 T3 ES2109311 T3 ES 2109311T3 ES 92304178 T ES92304178 T ES 92304178T ES 92304178 T ES92304178 T ES 92304178T ES 2109311 T3 ES2109311 T3 ES 2109311T3
Authority
ES
Spain
Prior art keywords
integrated circuit
transistor
sram cells
connection
door
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92304178T
Other languages
English (en)
Inventor
Kuo-Hua Lee
William John Nagy
Janmye Sung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Application granted granted Critical
Publication of ES2109311T3 publication Critical patent/ES2109311T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

UNA CELULA DE MEMORIA SEMICONDUCTORA TIENE UN PUERTA PARALELA (EJEMPLO 25). LA DIRECCION DE LA PUERTA SE ESCOGE VOLUNTARIAMENTE PARA MINIMIZAR LOS EFECTOS ASTIGMATICOS LITOGRAFICOS. ASI SE FABRICAN PUERTAS DE ANCHURA COMPARATIVAMENTE UNIFORME Y SE MEJORA LA PREDICCION DEL RENDIMIENTO DE TRANSISTOR. UNA INCORPORACION DEL INVENTO MUESTRA UNA CONEXION ENTRE DOS CAPAS CONDUCTORAS (35,43) Y UNA FUENTE/DRENAJE (15). LA CONEXION FORMA UN NUDO ENTRE UN TRANSISTOR DE ACCESO Y UN TRANSISTOR DISMINUIDO.
ES92304178T 1991-05-16 1992-05-08 Circuito integrado que utiliza celulas sram. Expired - Lifetime ES2109311T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/701,270 US5128738A (en) 1991-05-16 1991-05-16 Integrated circuit

Publications (1)

Publication Number Publication Date
ES2109311T3 true ES2109311T3 (es) 1998-01-16

Family

ID=24816679

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92304178T Expired - Lifetime ES2109311T3 (es) 1991-05-16 1992-05-08 Circuito integrado que utiliza celulas sram.

Country Status (7)

Country Link
US (1) US5128738A (es)
EP (1) EP0514095B1 (es)
JP (1) JP2662144B2 (es)
KR (1) KR100257953B1 (es)
DE (1) DE69222973T2 (es)
ES (1) ES2109311T3 (es)
TW (1) TW198131B (es)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5213990A (en) * 1992-04-01 1993-05-25 Texas Instruments, Incorporated Method for forming a stacked semiconductor structure
JPH05283654A (ja) * 1992-04-03 1993-10-29 Toshiba Corp マスクｒｏｍとその製造方法
US5721445A (en) * 1995-03-02 1998-02-24 Lucent Technologies Inc. Semiconductor device with increased parasitic emitter resistance and improved latch-up immunity
US5631112A (en) * 1995-11-16 1997-05-20 Vanguard International Semiconductor Corporation Multiple exposure method for photo-exposing photosensitive layers upon high step height topography substrate layers
US5707765A (en) * 1996-05-28 1998-01-13 Microunity Systems Engineering, Inc. Photolithography mask using serifs and method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5736844A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Semiconductor device
JPS59201461A (ja) * 1983-04-28 1984-11-15 Toshiba Corp 読み出し専用半導体記憶装置およびその製造方法
JPS59231851A (ja) * 1983-06-14 1984-12-26 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリセル
JPH0628302B2 (ja) * 1984-02-28 1994-04-13 富士通株式会社 半導体記憶装置
JPS63126270A (ja) * 1986-11-14 1988-05-30 Mitsubishi Electric Corp 半導体記憶装置
JPH0831533B2 (ja) * 1988-10-21 1996-03-27 セイコーエプソン株式会社 半導体記憶装置
WO1989011162A1 (en) * 1988-05-07 1989-11-16 Seiko Epson Corporation Semiconductor device and semiconductor memory device
JPH0735399Y2 (ja) * 1989-05-12 1995-08-09 ソニー株式会社 半導体メモリ

Also Published As

Publication number Publication date
JP2662144B2 (ja) 1997-10-08
DE69222973T2 (de) 1998-03-05
TW198131B (es) 1993-01-11
EP0514095B1 (en) 1997-11-05
KR920022535A (ko) 1992-12-19
DE69222973D1 (de) 1997-12-11
JPH05160369A (ja) 1993-06-25
KR100257953B1 (ko) 2000-06-01
US5128738A (en) 1992-07-07
EP0514095A2 (en) 1992-11-19
EP0514095A3 (en) 1992-12-30

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