SG9892G - Photoresist composition containing a novolak resin - Google Patents

Photoresist composition containing a novolak resin

Info

Publication number
SG9892G
SG9892G SG98/92A SG9892A SG9892G SG 9892 G SG9892 G SG 9892G SG 98/92 A SG98/92 A SG 98/92A SG 9892 A SG9892 A SG 9892A SG 9892 G SG9892 G SG 9892G
Authority
SG
Singapore
Prior art keywords
composition containing
photoresist composition
novolak resin
novolak
resin
Prior art date
Application number
SG98/92A
Other languages
English (en)
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3631883A external-priority patent/JPS59162542A/ja
Priority claimed from JP1625884A external-priority patent/JPS60159846A/ja
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG9892G publication Critical patent/SG9892G/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/22Exposing sequentially with the same light pattern different positions of the same surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
SG98/92A 1983-03-04 1992-02-01 Photoresist composition containing a novolak resin SG9892G (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3631883A JPS59162542A (ja) 1983-03-04 1983-03-04 ポジ型フオトレジスト組成物
JP1625884A JPS60159846A (ja) 1984-01-31 1984-01-31 ポジ型フオトレジスト組成物

Publications (1)

Publication Number Publication Date
SG9892G true SG9892G (en) 1992-03-20

Family

ID=26352549

Family Applications (1)

Application Number Title Priority Date Filing Date
SG98/92A SG9892G (en) 1983-03-04 1992-02-01 Photoresist composition containing a novolak resin

Country Status (7)

Country Link
US (1) US4863829A (de)
EP (1) EP0118291B1 (de)
KR (1) KR920003435B1 (de)
CA (1) CA1255952A (de)
DE (1) DE3482665D1 (de)
MX (1) MX163264B (de)
SG (1) SG9892G (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732840A (en) * 1985-03-22 1988-03-22 Fuji Photo Film Co., Ltd. Planographic printing plate method using light sensitive material including phenolic resol with dibenzylic ether groups
JPH0650396B2 (ja) * 1985-08-09 1994-06-29 東京応化工業株式会社 ポジ型ホトレジスト組成物
JPH0654384B2 (ja) * 1985-08-09 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
CA1279430C (en) * 1985-12-06 1991-01-22 Takashi Kubota High-molecular-weight soluble novolak resin and process for preparation thereof
EP0239423B1 (de) * 1986-03-28 1996-03-20 Japan Synthetic Rubber Co., Ltd. Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
JPH0654388B2 (ja) * 1986-05-02 1994-07-20 東京応化工業株式会社 ポジ型ホトレジスト組成物
US5238776A (en) * 1986-12-23 1993-08-24 Shipley Company Inc. Photoresist composition containing block copolymer resin and positive-working o-quinone diazide or negative-working azide sensitizer compound
US5130410A (en) * 1986-12-23 1992-07-14 Shipley Company Inc. Alternating and block copolymer resins
US5128230A (en) * 1986-12-23 1992-07-07 Shipley Company Inc. Quinone diazide containing photoresist composition utilizing mixed solvent of ethyl lactate, anisole and amyl acetate
US4873176A (en) * 1987-08-28 1989-10-10 Shipley Company Inc. Reticulation resistant photoresist coating
US5419995A (en) * 1987-10-13 1995-05-30 Shipley Company Inc. Photoresist composition with alternating or block copolymer resins and positive-working o-quinone diazide or negative-working azide sensitizer compound
JP2645587B2 (ja) * 1989-03-29 1997-08-25 富士写真フイルム株式会社 微細パターン形成材料及び微細パターン形成方法
US5132376A (en) * 1989-09-08 1992-07-21 Ocg Microelectronic Materials, Inc. Process for selective removal of dimeric species from phenolic polymers
US5151339A (en) * 1989-09-08 1992-09-29 Ocg Microelectronic Materials, Inc. Photoresist composition containing diazoquinone photosensitizer and novalak resin characterized by the complete and selective removal of dimeric species from the novolak resin
DE4013575C2 (de) * 1990-04-27 1994-08-11 Basf Ag Verfahren zur Herstellung negativer Reliefkopien
US5268256A (en) * 1990-08-02 1993-12-07 Ppg Industries, Inc. Photoimageable electrodepositable photoresist composition for producing non-tacky films
BR9103260A (pt) * 1990-08-02 1992-02-18 Ppg Industries Inc Composicao de resina fotossensivel que pode ser eletrodepositada e pode receber fotoimagem
WO1994015259A1 (en) * 1992-12-29 1994-07-07 Hoechst Celanese Corporation Resin compositions for photoresist applications
US5413894A (en) * 1993-05-07 1995-05-09 Ocg Microelectronic Materials, Inc. High ortho-ortho bonded novolak binder resins and their use in radiation-sensitive compositions
EP0720052A1 (de) * 1994-12-27 1996-07-03 Mitsubishi Chemical Corporation Fotoempfindliche Zusammensetzung und fotolithographische Druckplatte
US5589553A (en) * 1995-03-29 1996-12-31 Shipley Company, L.L.C. Esterification product of aromatic novolak resin with quinone diazide sulfonyl group
US5932389A (en) * 1998-02-20 1999-08-03 Shipley Company, L.L.C. Controlled alternating and block copolymer resins
KR100447950B1 (ko) * 2001-11-22 2004-09-08 한솔제지주식회사 포지티브형 포토레지스트 조성물
JP2003279705A (ja) * 2002-03-25 2003-10-02 Sanyo Electric Co Ltd 反射防止部材
US7867331B2 (en) 2003-08-04 2011-01-11 Honeywell International Inc. Coating composition optimization for via fill and photolithography applications and methods of preparation thereof
US8053159B2 (en) * 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
US7955782B2 (en) * 2008-09-22 2011-06-07 Honeywell International Inc. Bottom antireflective coatings exhibiting enhanced wet strip rates, bottom antireflective coating compositions for forming bottom antireflective coatings, and methods for fabricating the same
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
EP3194502A4 (de) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1022005B (de) * 1953-06-16 1958-01-02 Distillers Co Yeast Ltd Verfahren zur Herstellung von Novolakharzen
US3634082A (en) * 1967-07-07 1972-01-11 Shipley Co Light-sensitive naphthoquinone diazide composition containing a polyvinyl ether
GB1227602A (de) * 1967-11-24 1971-04-07
US3759711A (en) * 1970-09-16 1973-09-18 Eastman Kodak Co Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
US4022942A (en) * 1972-02-17 1977-05-10 Monsanto Company Process of preparing fibrous sheet from high-ortho phenolic resole resin varnish
DE2616992C3 (de) * 1976-04-17 1987-10-22 Agfa-Gevaert Ag, 5090 Leverkusen Lichtempfindliches Kopiermaterial zur Herstellung von Reliefs
US4097463A (en) * 1977-01-10 1978-06-27 Monsanto Company Process for preparing high ortho novolac resins
US4308368A (en) * 1979-03-16 1981-12-29 Daicel Chemical Industries Ltd. Photosensitive compositions with reaction product of novolak co-condensate with o-quinone diazide
JPS55155013A (en) * 1979-05-21 1980-12-03 Sumitomo Bakelite Co Ltd Preparation of quick-curing phenol resin
JPS5660442A (en) * 1979-10-23 1981-05-25 Fuji Photo Film Co Ltd Photosensitive lithographic plate and method for making lithographic plate
US4299947A (en) * 1980-06-11 1981-11-10 Sumitomo Bakelite Company Limited Process for producing quick-curing phenolic resin
US4377631A (en) * 1981-06-22 1983-03-22 Philip A. Hunt Chemical Corporation Positive novolak photoresist compositions
US4529682A (en) * 1981-06-22 1985-07-16 Philip A. Hunt Chemical Corporation Positive photoresist composition with cresol-formaldehyde novolak resins
DE3274354D1 (en) * 1981-06-22 1987-01-08 Hunt Chem Corp Philip A Novolak resin and a positive photoresist composition containing the same

Also Published As

Publication number Publication date
KR920003435B1 (ko) 1992-05-01
EP0118291A2 (de) 1984-09-12
CA1255952A (en) 1989-06-20
EP0118291A3 (en) 1986-08-20
US4863829A (en) 1989-09-05
KR840008381A (ko) 1984-12-14
EP0118291B1 (de) 1990-07-11
MX163264B (es) 1992-03-30
DE3482665D1 (de) 1990-08-16

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