SG87856A1 - A method of forming coatings - Google Patents
A method of forming coatingsInfo
- Publication number
- SG87856A1 SG87856A1 SG9905766A SG1999005766A SG87856A1 SG 87856 A1 SG87856 A1 SG 87856A1 SG 9905766 A SG9905766 A SG 9905766A SG 1999005766 A SG1999005766 A SG 1999005766A SG 87856 A1 SG87856 A1 SG 87856A1
- Authority
- SG
- Singapore
- Prior art keywords
- forming coatings
- coatings
- forming
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5035—Silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02359—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the surface groups of the insulating layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/901—Printed circuit
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Paints Or Removers (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/197,249 US6231989B1 (en) | 1998-11-20 | 1998-11-20 | Method of forming coatings |
Publications (1)
Publication Number | Publication Date |
---|---|
SG87856A1 true SG87856A1 (en) | 2002-04-16 |
Family
ID=22728633
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9905766A SG87856A1 (en) | 1998-11-20 | 1999-11-17 | A method of forming coatings |
Country Status (6)
Country | Link |
---|---|
US (1) | US6231989B1 (de) |
EP (1) | EP1003210A3 (de) |
JP (1) | JP2000164589A (de) |
KR (1) | KR20000047675A (de) |
SG (1) | SG87856A1 (de) |
TW (1) | TW505684B (de) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6440550B1 (en) * | 1999-10-18 | 2002-08-27 | Honeywell International Inc. | Deposition of fluorosilsesquioxane films |
US6913796B2 (en) * | 2000-03-20 | 2005-07-05 | Axcelis Technologies, Inc. | Plasma curing process for porous low-k materials |
US7011868B2 (en) * | 2000-03-20 | 2006-03-14 | Axcelis Technologies, Inc. | Fluorine-free plasma curing process for porous low-k materials |
US6558755B2 (en) | 2000-03-20 | 2003-05-06 | Dow Corning Corporation | Plasma curing process for porous silica thin film |
US6759098B2 (en) | 2000-03-20 | 2004-07-06 | Axcelis Technologies, Inc. | Plasma curing of MSQ-based porous low-k film materials |
US6576300B1 (en) | 2000-03-20 | 2003-06-10 | Dow Corning Corporation | High modulus, low dielectric constant coatings |
JP5350571B2 (ja) * | 2000-08-21 | 2013-11-27 | ダウ グローバル テクノロジーズ エルエルシー | マイクロ電子デバイス製造に使用する有機ポリマー絶縁膜用ハードマスクとしての有機シリケート樹脂 |
AU2001296737A1 (en) | 2000-10-12 | 2002-04-22 | North Carolina State University | Co2-processes photoresists, polymers, and photoactive compounds for microlithography |
US6780499B2 (en) * | 2001-05-03 | 2004-08-24 | International Business Machines Corporation | Ordered two-phase dielectric film, and semiconductor device containing the same |
US6541842B2 (en) * | 2001-07-02 | 2003-04-01 | Dow Corning Corporation | Metal barrier behavior by SiC:H deposition on porous materials |
US6872456B2 (en) * | 2001-07-26 | 2005-03-29 | Dow Corning Corporation | Siloxane resins |
CN1535301A (zh) * | 2001-07-26 | 2004-10-06 | 陶氏康宁公司 | 硅氧烷树脂 |
US6596404B1 (en) | 2001-07-26 | 2003-07-22 | Dow Corning Corporation | Siloxane resins |
US6756085B2 (en) * | 2001-09-14 | 2004-06-29 | Axcelis Technologies, Inc. | Ultraviolet curing processes for advanced low-k materials |
JP3992480B2 (ja) * | 2001-11-12 | 2007-10-17 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法ならびに基板処理システム |
US6852367B2 (en) * | 2001-11-20 | 2005-02-08 | Shipley Company, L.L.C. | Stable composition |
KR100468729B1 (ko) | 2002-04-25 | 2005-01-29 | 삼성전자주식회사 | Hcd 소스를 이용하여 실리콘 산화막을 원자층 증착하는방법 |
KR100505668B1 (ko) * | 2002-07-08 | 2005-08-03 | 삼성전자주식회사 | 원자층 증착 방법에 의한 실리콘 산화막 형성 방법 |
KR100532915B1 (ko) * | 2002-10-29 | 2005-12-02 | 삼성전자주식회사 | 단당류계 또는 올리고당류계 포로젠을 포함하는 다공성층간 절연막을 형성하기 위한 조성물 |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
KR100533538B1 (ko) * | 2002-12-03 | 2005-12-05 | 삼성전자주식회사 | 새로운 기공형성물질을 포함하는 다공성 층간 절연막을형성하기 위한 조성물 |
US20070027225A1 (en) * | 2002-12-03 | 2007-02-01 | Lyu Yi Y | Composition for preparing porous dielectric thin films |
JP4092220B2 (ja) * | 2003-01-31 | 2008-05-28 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7084076B2 (en) | 2003-02-27 | 2006-08-01 | Samsung Electronics, Co., Ltd. | Method for forming silicon dioxide film using siloxane |
US7098149B2 (en) * | 2003-03-04 | 2006-08-29 | Air Products And Chemicals, Inc. | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
TWI240959B (en) | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
DE10330022A1 (de) * | 2003-07-03 | 2005-01-20 | Degussa Ag | Verfahren zur Herstellung von Iow-k dielektrischen Filmen |
KR20050040275A (ko) * | 2003-10-28 | 2005-05-03 | 삼성전자주식회사 | 절연막 형성용 조성물 및 이를 이용한 절연막 또는 절연막패턴의 형성방법 |
US8734906B2 (en) * | 2003-11-21 | 2014-05-27 | Brismat Inc. | Films and method of production thereof |
CN1680466A (zh) * | 2003-11-24 | 2005-10-12 | 三星电子株式会社 | 用多面体分子倍半硅氧烷,形成半导体器件用层间电介质膜的方法 |
US8901268B2 (en) * | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
EP1634929A1 (de) * | 2004-09-13 | 2006-03-15 | DSM IP Assets B.V. | Gegenstand mit nicht-isolierender Beschichtung |
US20070299176A1 (en) * | 2005-01-28 | 2007-12-27 | Markley Thomas J | Photodefinable low dielectric constant material and method for making and using same |
KR101139157B1 (ko) * | 2005-02-07 | 2012-04-26 | 삼성전자주식회사 | 단일종의 입체이성질체 만으로 된 실록산 단량체 또는이의 실록산 중합체를 포함하는 저유전 박막 형성용조성물 및 이들을 이용한 저유전 박막의 제조방법 |
KR20060090483A (ko) * | 2005-02-07 | 2006-08-11 | 삼성코닝 주식회사 | 풀러렌을 포함하는 저유전 박막 형성용 조성물, 이를이용한 저유전 박막 및 저유전 박막의 제조방법 |
MX2007014980A (es) * | 2005-05-31 | 2008-04-08 | Xerocoat Pty Ltd | Control de la morfologia de peliculas de silice. |
US8399349B2 (en) | 2006-04-18 | 2013-03-19 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
US20080012074A1 (en) * | 2006-07-14 | 2008-01-17 | Air Products And Chemicals, Inc. | Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors |
DE102007010544A1 (de) | 2007-03-05 | 2008-09-11 | Wacker Chemie Ag | Schichten aus heterosubstituerten Silsesquioxanen |
US20080264672A1 (en) * | 2007-04-26 | 2008-10-30 | Air Products And Chemicals, Inc. | Photoimprintable Low Dielectric Constant Material and Method for Making and Using Same |
US7905994B2 (en) * | 2007-10-03 | 2011-03-15 | Moses Lake Industries, Inc. | Substrate holder and electroplating system |
CA2704292C (en) | 2007-11-02 | 2018-01-16 | Rex Medical, L.P. | Method of inserting a vein filter |
US20090188553A1 (en) * | 2008-01-25 | 2009-07-30 | Emat Technology, Llc | Methods of fabricating solar-cell structures and resulting solar-cell structures |
JP2009206457A (ja) * | 2008-02-29 | 2009-09-10 | Fujifilm Corp | 絶縁膜 |
JP2009212260A (ja) * | 2008-03-04 | 2009-09-17 | Fujifilm Corp | 膜 |
US20110076416A1 (en) * | 2008-05-26 | 2011-03-31 | Basf Se | Method of making porous materials and porous materials prepared thereof |
JP5732187B2 (ja) * | 2009-01-22 | 2015-06-10 | 新日鉄住金化学株式会社 | 硬化物の製造方法 |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
KR101248530B1 (ko) | 2010-09-17 | 2013-04-03 | 한국과학기술연구원 | 가지형 실세스퀴옥산 폴리머 중합용 모노머 조성물, 이로부터 합성된 가지형 실세스퀴옥산 폴리머 및 이의 합성방법 |
JP2014508640A (ja) | 2011-02-16 | 2014-04-10 | ダウ コーニング コーポレーション | 多孔質基材のコーティング方法 |
US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
JP6670766B2 (ja) * | 2014-06-26 | 2020-03-25 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 二酸化ケイ素層の施与方法 |
WO2016167892A1 (en) | 2015-04-13 | 2016-10-20 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
WO2019246061A1 (en) * | 2018-06-19 | 2019-12-26 | Versum Materials Us, Llc | Silicon compounds and methods for depositing films using same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0461782B1 (de) * | 1990-06-04 | 1993-10-06 | Dow Corning Corporation | Umwandlung bei niedrigen Temperaturen von Kieselvorproduktion in Kieselerden |
EP0460868B1 (de) * | 1990-06-04 | 1994-05-18 | Dow Corning Corporation | Amin-Katalysatoren für die Umwandlung von Kieselsäure-Vorprodukten zu Kieselsäure bei niedriger Temperatur |
WO1998049721A1 (en) * | 1997-04-29 | 1998-11-05 | Alliedsignal Inc. | Improved process for producing nanoporous silica thin films |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4636440A (en) | 1985-10-28 | 1987-01-13 | Manville Corporation | Novel process for coating substrates with glass-like films and coated substrates |
US4756977A (en) | 1986-12-03 | 1988-07-12 | Dow Corning Corporation | Multilayer ceramics from hydrogen silsesquioxane |
US4749631B1 (en) | 1986-12-04 | 1993-03-23 | Multilayer ceramics from silicate esters | |
US4847162A (en) | 1987-12-28 | 1989-07-11 | Dow Corning Corporation | Multilayer ceramics coatings from the ceramification of hydrogen silsequioxane resin in the presence of ammonia |
US4842888A (en) | 1988-04-07 | 1989-06-27 | Dow Corning Corporation | Ceramic coatings from the pyrolysis in ammonia of mixtures of silicate esters and other metal oxide precursors |
US5441765A (en) | 1993-09-22 | 1995-08-15 | Dow Corning Corporation | Method of forming Si-O containing coatings |
US5547703A (en) | 1994-04-11 | 1996-08-20 | Dow Corning Corporation | Method of forming si-o containing coatings |
US5618878A (en) | 1995-04-07 | 1997-04-08 | Dow Corning Corporation | Hydrogen silsesquioxane resin coating composition |
EP0775669B1 (de) * | 1995-11-16 | 2001-05-02 | Texas Instruments Incorporated | Wenig flüchtiges Lösungsmittel enthaltender Vorläufer für nanoporöses Aerogel |
US5753305A (en) | 1995-11-16 | 1998-05-19 | Texas Instruments Incorporated | Rapid aging technique for aerogel thin films |
JP3415741B2 (ja) | 1997-03-31 | 2003-06-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
JP3354431B2 (ja) | 1997-03-31 | 2002-12-09 | 東レ・ダウコーニング・シリコーン株式会社 | 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法 |
US6503850B1 (en) | 1997-04-17 | 2003-01-07 | Alliedsignal Inc. | Process for producing nanoporous dielectric films at high pH |
KR20010006553A (ko) | 1997-04-17 | 2001-01-26 | 크리스 로저 에이치 | 다중밀도의 미세공극성 유전체 코팅된 기판 및 그 코팅방법 |
-
1998
- 1998-11-20 US US09/197,249 patent/US6231989B1/en not_active Expired - Fee Related
-
1999
- 1999-10-25 TW TW088118391A patent/TW505684B/zh not_active IP Right Cessation
- 1999-11-05 EP EP99308828A patent/EP1003210A3/de not_active Withdrawn
- 1999-11-17 SG SG9905766A patent/SG87856A1/en unknown
- 1999-11-18 JP JP11328597A patent/JP2000164589A/ja not_active Withdrawn
- 1999-11-19 KR KR1019990051442A patent/KR20000047675A/ko not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0461782B1 (de) * | 1990-06-04 | 1993-10-06 | Dow Corning Corporation | Umwandlung bei niedrigen Temperaturen von Kieselvorproduktion in Kieselerden |
EP0460868B1 (de) * | 1990-06-04 | 1994-05-18 | Dow Corning Corporation | Amin-Katalysatoren für die Umwandlung von Kieselsäure-Vorprodukten zu Kieselsäure bei niedriger Temperatur |
WO1998049721A1 (en) * | 1997-04-29 | 1998-11-05 | Alliedsignal Inc. | Improved process for producing nanoporous silica thin films |
Also Published As
Publication number | Publication date |
---|---|
US6231989B1 (en) | 2001-05-15 |
EP1003210A2 (de) | 2000-05-24 |
TW505684B (en) | 2002-10-11 |
KR20000047675A (ko) | 2000-07-25 |
JP2000164589A (ja) | 2000-06-16 |
EP1003210A3 (de) | 2000-06-14 |
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